CN115996030A - Quartz crystal coating thickness control method and system, equipment and storage medium - Google Patents
Quartz crystal coating thickness control method and system, equipment and storage medium Download PDFInfo
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Abstract
The application relates to the technical field of film coating control and provides a method, a system, equipment and a storage medium for controlling the thickness of a quartz crystal film coating. The method comprises the following steps: element extraction is carried out on the application information of the quartz crystal resonator, and application scene element information is obtained; determining quartz crystal oscillator simulation parameters according to the application scene element information; inputting quartz crystal vibration simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold; monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information; obtaining a film thickness control factor based on the resonance frequency monitoring information and the quartz crystal application thickness threshold; and controlling the thickness of the quartz crystal coating process based on the film thickness control factor. By adopting the method, the application accuracy of the control of the thickness of the quartz crystal coating can be improved, and the technical effect of the application performance of the quartz crystal oscillator is further ensured.
Description
Technical Field
The application relates to the technical field of film coating control, in particular to a method, a system, equipment and a storage medium for controlling the thickness of a quartz crystal film coating.
Background
The quartz crystal resonator is made of quartz crystal sheets with piezoelectric effect, and the quartz crystal sheets can generate mechanical vibration when being subjected to an external alternating electric field, and when the frequency of the alternating electric field is the same as the natural frequency of the quartz crystal, the vibration becomes strong, which is the reaction of the resonance characteristic of the crystal. The quartz resonator has the advantages of small volume, light weight, high reliability, high frequency stability and the like, and is widely applied to the fields of telecommunication, satellite communication, mobile telephone systems, aerospace and the like. The quartz crystal has piezoelectric effect, and the natural resonant frequency and the thickness of the coating have corresponding change relation, so that the quartz crystal has important application significance in thickness monitoring and controlling in the process of producing, processing and coating the quartz crystal.
However, in the prior art, the application scene is not considered in the quartz crystal coating, the thickness control accuracy is low, and the technical problem of influencing the application performance of the quartz crystal oscillator is caused.
Disclosure of Invention
Based on the above, it is necessary to provide a method, a system, a device and a storage medium for controlling the thickness of a quartz crystal coating, which can improve the accuracy of controlling the thickness of the quartz crystal coating, thereby ensuring the application performance of the quartz crystal.
A method for controlling the thickness of a quartz crystal coating film, comprising the following steps: acquiring application information of a quartz crystal resonator; extracting elements from the application information of the quartz crystal resonator to obtain application scene element information; determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency; inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold; monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information; based on the resonance frequency monitoring information and the quartz crystal application thickness threshold value, obtaining a film thickness control factor; and controlling the thickness of the quartz crystal coating process based on the film thickness control factor.
A quartz crystal coating thickness control system, the system comprising: the application information acquisition module is used for acquiring the application information of the quartz crystal resonator; the scene element extraction module is used for extracting elements of the quartz crystal resonator application information to obtain application scene element information; the simulation parameter determining module is used for determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency; the crystal thickness analysis module is used for inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold; the coating real-time monitoring module is used for monitoring the quartz crystal coating process in real time to obtain resonance frequency monitoring information; the film thickness control factor obtaining module is used for obtaining the film thickness control factor based on the resonance frequency monitoring information and the quartz crystal application thickness threshold; and the film thickness control module is used for controlling the thickness of the quartz crystal in the film coating process based on the film thickness control factor.
A computer device comprising a memory storing a computer program and a processor which when executing the computer program performs the steps of:
acquiring application information of a quartz crystal resonator;
extracting elements from the application information of the quartz crystal resonator to obtain application scene element information;
determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency;
inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold;
monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information;
based on the resonance frequency monitoring information and the quartz crystal application thickness threshold value, obtaining a film thickness control factor;
and controlling the thickness of the quartz crystal coating process based on the film thickness control factor.
A computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of:
acquiring application information of a quartz crystal resonator;
extracting elements from the application information of the quartz crystal resonator to obtain application scene element information;
determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency;
inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold;
monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information;
based on the resonance frequency monitoring information and the quartz crystal application thickness threshold value, obtaining a film thickness control factor;
and controlling the thickness of the quartz crystal coating process based on the film thickness control factor.
The method, the system, the equipment and the storage medium for controlling the thickness of the quartz crystal coating solve the technical problems that in the prior art, the application scene is not considered, the thickness control accuracy is low, and the application performance of the quartz crystal oscillator is affected.
The foregoing description is only an overview of the technical solutions of the present application, and may be implemented according to the content of the specification in order to make the technical means of the present application more clearly understood, and in order to make the above-mentioned and other objects, features and advantages of the present application more clearly understood, the following detailed description of the present application will be given.
Drawings
FIG. 1 is a flow chart of a method for controlling thickness of a quartz crystal coating film according to an embodiment;
FIG. 2 is a schematic flow chart of determining simulation parameters of a quartz crystal oscillator in a method for controlling thickness of a quartz crystal coating film according to an embodiment;
FIG. 3 is a block diagram of a quartz crystal coating thickness control system in one embodiment;
FIG. 4 is an internal block diagram of a computer device in one embodiment;
reference numerals illustrate: the device comprises an application information obtaining module 11, a scene element extracting module 12, a simulation parameter determining module 13, a crystal thickness analyzing module 14, a film coating real-time monitoring module 15, a film thickness control factor obtaining module 16 and a film coating thickness control module 17.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
As shown in fig. 1, the application provides a method for controlling the thickness of a quartz crystal coating film, which comprises the following steps:
step S100: acquiring application information of a quartz crystal resonator;
step S200: extracting elements from the application information of the quartz crystal resonator to obtain application scene element information;
specifically, in order to accurately control the thickness of a quartz crystal coating film, application information of a quartz crystal resonator is firstly obtained, the application information of the quartz crystal resonator is in the practical application field of the quartz crystal oscillator, and the practical application requirements of different application fields on the quartz crystal oscillator are different. Quartz crystal oscillator has the characteristics of high frequency stability and relatively low cost, and therefore has an important role in the technical field of electronics, and is widely applied to the fields of telecommunication, satellite communication, mobile telephone systems, global Positioning Systems (GPS), navigation, remote control, aerospace, high-speed computers, precise measuring instruments, electronic products and the like. In order to ensure that the quartz crystal oscillator meets the requirements of application fields, element extraction is performed on application information of the quartz crystal resonator, specific application requirement standards of each application field of the quartz crystal oscillator are firstly obtained, and specific application indexes are determined through the specific application field standards of the quartz crystal oscillator. The application standards of the quartz crystal oscillator are correspondingly regulated in different industry fields, and the application standards of the quartz crystal oscillator are specific application range standards such as application temperature, humidity and application pressure in the high-speed computer field, and application scene element information suitable for the high-speed computer field, namely, each associated scene parameter index applied to the field, is obtained through the application standards, wherein the application scene element information comprises parameter indexes such as application field type, application environment grade and the like, and the thickness control application specificity is improved so as to ensure the actual application effect of the quartz crystal oscillator.
Step S300: determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency;
in one embodiment, as shown in fig. 2, the determining the quartz crystal oscillator simulation parameter according to the application scene element information, step S300 of the present application further includes:
step S310: according to the application scene element information, extracting and obtaining quartz crystal oscillator application index information;
step S320: performing principal component analysis on the quartz crystal oscillator application index information to obtain dimension-reducing quartz crystal oscillator application index information;
step S330: acquiring the quartz crystal oscillator application grade according to the application scene element information;
step S340: performing application simulation analysis based on the dimension reduction quartz crystal oscillator application index information and the quartz crystal oscillator application grade to obtain a crystal oscillator application simulation information set;
step S350: and fusing the application simulation information in the crystal oscillator application simulation information set to obtain the quartz crystal oscillator simulation parameters.
In one embodiment, the obtaining the dimension-reduced quartz crystal oscillator application index information, step S320 of the present application further includes:
step S321: performing decentration treatment on each index information in the quartz crystal oscillator application index information to obtain a covariance matrix;
step S322: calculating the covariance matrix to obtain a characteristic value and a characteristic vector of the covariance matrix;
step S323: and projecting the index information to the feature vector to obtain the dimension-reduced quartz crystal oscillator application index information after dimension reduction of the index information.
Specifically, according to the application scene element information, determining application simulation parameters of the quartz crystal oscillator, and firstly, according to the application scene element information, extracting and obtaining application index information of the quartz crystal oscillator, namely application environment simulation indexes including application temperature, application humidity, application intensity, pressure, nominal frequency and the like. And carrying out principal component analysis on the quartz crystal oscillator application index information, specifically carrying out decentralization treatment on each index information in the quartz crystal oscillator application index information, solving the average value of the data characteristics of each sample in the quartz crystal oscillator application index information, subtracting the average value of each characteristic from each sample for all samples, and then obtaining a new characteristic value. Obtaining a covariance matrix corresponding to the calculated covariance formula, and then obtaining a characteristic value and a characteristic vector of the covariance matrix through matrix operation, wherein each characteristic value corresponds to one characteristic vector.
And selecting the maximum first K eigenvalues and the eigenvectors corresponding to the maximum first K eigenvalues from the obtained eigenvectors, projecting original characteristics in the index information onto the selected eigenvectors, reducing the complexity of time and the space complexity, removing noise mixed in matrix data, and clearly displaying important characteristics in the data, thereby obtaining index information with strong relevance, namely the application index information of the dimension-reduced quartz crystal oscillator after dimension reduction, wherein the application index information comprises the application temperature, the application humidity, the application pressure, the nominal frequency and the like. And performing dimension reduction processing on the quartz crystal oscillator application index information by using a principal component analysis method, and eliminating redundant data on the premise of guaranteeing the information quantity, so that the sample quantity of attribute information in a database is reduced, the information quantity loss after dimension reduction is minimum, and the operation speed of a training model on the data is accelerated.
And obtaining the quartz crystal oscillator application grade according to the application scene element information, namely the application degree grade corresponding to each application index, such as high-temperature and high-pressure application. And carrying out application simulation analysis based on the dimension-reduced quartz crystal oscillator application index information and the quartz crystal oscillator application grade to obtain a corresponding crystal oscillator application simulation information set, wherein the corresponding crystal oscillator application simulation information set comprises an application environment type and an application degree grade. And fusing the application simulation information in the crystal oscillator application simulation information set to obtain final quartz crystal oscillator simulation parameters for application simulation of the target control quartz crystal oscillator. The element extraction is carried out on the application scene of the quartz crystal resonator, so that the application parameter simulation is carried out, the application simulation parameters are more comprehensive and accurate, and the thickness of the quartz crystal resonator is ensured to meet the application performance.
Step S400: inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold;
in one embodiment, the obtaining the quartz crystal application thickness threshold value, step S400 of the present application further includes:
step S410: calling to obtain a calibrated quartz crystal thickness analysis model according to the basic information of the quartz crystal;
step S420: the calibrated quartz crystal thickness analysis model comprises an input layer, an analysis logic layer and an output layer;
step S430: inputting the quartz crystal oscillator simulation parameters into the analysis logic layer through the input layer for analysis to obtain a quartz crystal application thickness threshold;
step S440: and outputting the quartz crystal application thickness threshold value as a model output result based on the output layer.
In one embodiment, the step S410 of the present application further includes:
step S411: acquiring historical quartz crystal oscillator data information, wherein the historical quartz crystal oscillator data information comprises quartz crystal oscillator data information of various calibration parameter categories;
step S412: respectively carrying out model training on the historical quartz crystal oscillator data information according to the calibration parameter categories to construct a quartz crystal thickness analysis model library;
step S413: classifying the characteristics of the basic information of the quartz crystal to obtain classified characteristic calibration parameters;
step S414: and calling the calibration quartz crystal thickness analysis model from the quartz crystal thickness analysis model library based on the classification characteristic calibration parameters to obtain the calibration quartz crystal thickness analysis model.
Specifically, the quartz crystal vibration simulation parameters are input into a calibrated quartz crystal thickness analysis model for analysis, wherein the calibrated quartz crystal thickness analysis model is a specific thickness analysis model suitable for the quartz crystal. The specific step of calling to obtain the calibrated quartz crystal thickness analysis model is to obtain historical quartz crystal oscillator data information through a big data technology, wherein the historical quartz crystal oscillator data information comprises quartz crystal oscillator data information of various calibration parameter types, namely quartz crystal oscillator application parameter information and film coating thickness information of various processing parameter types. And respectively performing model training on the historical quartz crystal oscillator data information according to the calibration parameter types, namely respectively performing neural network model training on the historical data according to different processing parameter types to obtain a quartz crystal thickness analysis model set corresponding to each historical data, and further constructing a quartz crystal thickness analysis model library.
And classifying the characteristics of the basic information of the quartz crystal, wherein the basic information of the quartz crystal comprises geometric dimensions, cutting types, crystal areas and the like, and obtaining corresponding classified characteristic calibration parameters. And calling the calibration quartz crystal thickness analysis model corresponding to the calibration parameters from the quartz crystal thickness analysis model library based on the classification characteristic calibration parameters. The functional layer for calibrating the quartz crystal thickness analysis model comprises an input layer, an analysis logic layer and an output layer, wherein the quartz crystal vibration simulation parameters are input into the analysis logic layer through the input layer for analysis, the analysis logic layer is used for analyzing the thickness of a quartz crystal coating film and outputting to obtain a quartz crystal application thickness threshold value, and the quartz crystal application thickness threshold value is a coating film thickness range corresponding to the quartz crystal vibration application performance. And the quartz crystal application thickness threshold value is output as a model output result based on the output layer, and the analysis accuracy and the analysis efficiency of the quartz crystal application thickness threshold value are improved through intelligent model analysis, so that the quartz crystal vibration application performance is ensured.
Step S500: monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information;
step S600: based on the resonance frequency monitoring information and the quartz crystal application thickness threshold value, obtaining a film thickness control factor;
in one embodiment, the obtaining the film thickness control factor, step S600 of the present application further includes:
step S610: obtaining a quartz crystal thickness increment-crystal frequency change function;
step S620: inputting the resonance frequency monitoring information into the quartz crystal thickness increment-crystal frequency change function for conversion to obtain quartz crystal thickness monitoring information;
step S630: when the quartz crystal thickness monitoring information does not meet the quartz crystal application thickness threshold value, a coating correction instruction is obtained;
step S640: and taking the difference value between the thickness monitoring information of the quartz crystal and the thickness threshold value of the quartz crystal application as the film thickness control factor based on the film coating correction instruction.
Step S700: and controlling the thickness of the quartz crystal coating process based on the film thickness control factor.
Specifically, in order to ensure the control accuracy of the thickness of the coating film, the quartz crystal coating process is monitored in real time by means of a vibration sensor and the like, and resonance frequency monitoring information is obtained. The resonance frequency change of the quartz crystal is related to the coating thickness increment, firstly, a quartz crystal thickness increment-crystal frequency change function is obtained, and the change function is that
If the thickness of the quartz crystal with thickness d is changed +.>
d, the frequency change of the crystal oscillator>
The negative sign in the formula indicates that the frequency of the quartz crystal increases with the film thicknessAnd decreases. And inputting the resonance frequency monitoring information into the quartz crystal thickness increment-crystal frequency change function for conversion, and outputting to obtain corresponding quartz crystal thickness monitoring information, thereby realizing real-time monitoring of the quartz crystal film coating process.
And when the thickness monitoring information of the quartz crystal does not meet the application thickness threshold value of the quartz crystal, indicating that the deviation exists in the thickness of the coating film of the quartz crystal, and obtaining a coating film correction instruction when the deviation does not meet the application standard. And taking the difference value between the quartz crystal thickness monitoring information and the quartz crystal application thickness threshold value as a film thickness control factor, namely the thickness degree of the film coating to be corrected, based on the film coating correction instruction. And based on the film thickness control factor, performing thickness control on the quartz crystal film coating process, and if the film thickness is too small, continuing to coat the quartz crystal film until the thickness threshold value of the quartz crystal application is met. By monitoring the quartz crystal coating process in real time, the application accuracy and the control timeliness of coating thickness control are improved, and further the quartz crystal oscillator application performance is guaranteed.
In one embodiment, the steps of the present application further comprise:
step S810: performing analysis effect verification on the calibrated quartz crystal thickness analysis model to obtain model analysis accuracy;
step S820: taking the difference value between the model analysis accuracy and the preset analysis accuracy as a model analysis deviation degree;
step S830: initializing particle swarm parameters based on a PSO algorithm, and iteratively calculating a particle swarm fitness function according to the model analysis deviation degree and the particle swarm parameters;
step S840: when a preset termination condition is reached, obtaining output optimal result particles of the particle swarm fitness function, and mapping the output optimal result particles to the calibrated quartz crystal thickness analysis model for optimization updating training.
Specifically, the analysis effect verification can be performed on the calibrated quartz crystal thickness analysis model through a verification set of training data, so that the model analysis accuracy, namely the model accuracy, is obtained. If the model analysis accuracy does not reach the preset analysis accuracy, namely the model output accuracy does not reach the standard, taking the difference value between the model analysis accuracy and the preset analysis accuracy as the model analysis deviation degree, wherein the larger the model analysis deviation degree is, the worse the model analysis accuracy is, and the optimization is required. Because the fitting degree of the calibrated quartz crystal thickness analysis model is low, the method cannot be suitable for the current quartz crystal thickness analysis, and the PSO algorithm is selected to optimize the calibrated quartz crystal thickness analysis model, namely the particle swarm optimization algorithm, is a random optimization algorithm based on population, can simulate and iterate continuously until reaching a balanced or optimal state, and stores the balanced or optimal state.
Firstly, initializing particle swarm parameters based on a PSO algorithm, wherein the particle swarm parameters are virtual space parameters for optimizing the calibrated quartz crystal thickness analysis model, iteratively calculating a particle swarm fitness function according to the model analysis deviation degree and the particle swarm parameters, further updating the positions and speeds of particles in the particle swarm, inputting all the particles into the model for training, evaluating the quality of the particles by calculating the fitness function of the particle swarm, and adjusting the positions and speeds of each particle by the fitness function to reduce the error degree of model output information. When the preset termination condition is reached, one is that the particles are in a balanced or optimal state, the other is that the operation limit is exceeded, the condition exceeding the operation limit is not specifically analyzed, the output result of the particle swarm fitness function is obtained, and the output result comprises the optimal result particles, namely the optimal state of the particles. And mapping the output optimal result particles to the calibrated quartz crystal thickness analysis model for optimization updating training, wherein the output accuracy of the calibrated quartz crystal thickness analysis model after optimization training is improved, so that the model output error degree is reduced, the accuracy and the output efficiency of the model output result are improved, and the output analysis accuracy of the quartz crystal application thickness threshold value is further improved.
In one embodiment, as shown in fig. 3, there is provided a quartz crystal coating thickness control system, comprising: the device comprises an application information obtaining module 11, a scene element extracting module 12, a simulation parameter determining module 13, a crystal thickness analyzing module 14, a coating real-time monitoring module 15, a film thickness control factor obtaining module 16 and a coating thickness control module 17, wherein:
an application information obtaining module 11, configured to obtain application information of the quartz crystal resonator;
the scene element extraction module 12 is configured to perform element extraction on the application information of the quartz crystal resonator to obtain application scene element information;
the simulation parameter determining module 13 is configured to determine quartz crystal oscillator simulation parameters according to the application scene element information, where the quartz crystal oscillator simulation parameters include an application temperature, an application humidity, an application pressure, and a nominal frequency;
the crystal thickness analysis module 14 is used for inputting the quartz crystal oscillation simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold;
the coating real-time monitoring module 15 is used for monitoring the quartz crystal coating process in real time to obtain resonance frequency monitoring information;
a film thickness control factor obtaining module 16, configured to obtain a film thickness control factor based on the resonance frequency monitoring information and the quartz crystal application thickness threshold;
and the film thickness control module 17 is used for controlling the thickness of the quartz crystal in the film coating process based on the film thickness control factor.
In one embodiment, the simulation parameter determination module further comprises:
the scene element extraction unit is used for extracting and obtaining quartz crystal oscillator application index information according to the application scene element information;
the main component analysis unit is used for carrying out main component analysis on the quartz crystal oscillator application index information to obtain dimension-reduced quartz crystal oscillator application index information;
the application grade obtaining unit is used for obtaining the quartz crystal oscillator application grade according to the application scene element information;
the application simulation analysis unit is used for carrying out application simulation analysis based on the dimension reduction quartz crystal oscillator application index information and the quartz crystal oscillator application grade to obtain a crystal oscillator application simulation information set;
and the simulation information fusion unit is used for fusing the application simulation information in the crystal oscillator application simulation information set to obtain the quartz crystal oscillator simulation parameters.
In one embodiment, the principal component analysis unit further includes:
the decentralizing processing unit is used for decentralizing each index information in the quartz crystal oscillator application index information to obtain a covariance matrix;
the covariance matrix calculation unit is used for calculating the covariance matrix to obtain the eigenvalue and eigenvector of the covariance matrix;
the dimension reduction application index obtaining unit is used for projecting the index information to the feature vector to obtain the dimension reduction quartz crystal oscillator application index information after dimension reduction of the index information.
In one embodiment, the crystal thickness analysis module further comprises:
the analysis model calling unit is used for calling and obtaining a calibrated quartz crystal thickness analysis model according to the basic information of the quartz crystal;
the model forming unit is used for calibrating the quartz crystal thickness analysis model and comprises an input layer, an analysis logic layer and an output layer;
the model analysis unit is used for inputting the quartz crystal oscillator simulation parameters into the analysis logic layer through the input layer for analysis to obtain a quartz crystal application thickness threshold;
and the model output unit is used for outputting the quartz crystal application thickness threshold value as a model output result based on the output layer.
In one embodiment, the analysis model invoking unit further comprises:
the historical data acquisition unit is used for acquiring historical quartz crystal oscillator data information, wherein the historical quartz crystal oscillator data information comprises quartz crystal oscillator data information of various calibration parameter categories;
the model training unit is used for respectively carrying out model training on the historical quartz crystal oscillator data information according to the calibration parameter categories to construct a quartz crystal thickness analysis model library;
the characteristic classification unit is used for classifying the characteristics of the basic information of the quartz crystal to obtain classified characteristic calibration parameters;
and the model obtaining unit is used for calling and obtaining the calibrated quartz crystal thickness analysis model from the quartz crystal thickness analysis model library based on the classification characteristic calibration parameters.
In one embodiment, the film thickness control factor obtaining module further includes:
a change function obtaining unit for obtaining a quartz crystal thickness increment-crystal frequency change function;
the function conversion obtaining unit is used for inputting the resonance frequency monitoring information into the quartz crystal thickness increment-crystal frequency change function for conversion to obtain quartz crystal thickness monitoring information;
a coating correction instruction obtaining unit, configured to obtain a coating correction instruction when the thickness monitoring information of the quartz crystal does not meet the thickness threshold value of the quartz crystal;
and the control factor obtaining unit is used for taking the difference value between the thickness monitoring information of the quartz crystal and the thickness threshold value applied to the quartz crystal as the film thickness control factor based on the film coating correction instruction.
In one embodiment, the system further comprises:
the analysis effect verification unit is used for verifying the analysis effect of the calibrated quartz crystal thickness analysis model to obtain model analysis accuracy;
the model deviation degree obtaining unit is used for taking the difference value between the model analysis accuracy and the preset analysis accuracy as the model analysis deviation degree;
the fitness function calculation unit is used for initializing particle swarm parameters based on a PSO algorithm and iteratively calculating a particle swarm fitness function according to the model analysis deviation degree and the particle swarm parameters;
and the optimization updating training unit is used for obtaining the output optimal result particles of the particle swarm fitness function when the preset termination condition is reached, and mapping the output optimal result particles to the calibrated quartz crystal thickness analysis model for optimization updating training.
For a specific embodiment of a quartz crystal coating thickness control system, reference may be made to the above embodiment of a quartz crystal coating thickness control method, which is not described herein. All or part of each module in the quartz crystal coating thickness control device can be realized by software, hardware and a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In one embodiment, a computer device is provided, which may be a server, the internal structure of which may be as shown in fig. 4. The computer device includes a processor, a memory, and a network interface connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, computer programs, and a database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The database of the computer device is used for storing news data, time attenuation factors and other data. The network interface of the computer device is used for communicating with an external terminal through a network connection. The computer program when executed by the processor is used for realizing a quartz crystal coating thickness control method.
Those skilled in the art will appreciate that the structures shown in FIG. 4 are block diagrams only and do not constitute a limitation of the computer device on which the present aspects apply, and that a particular computer device may include more or less components than those shown, or may combine some of the components, or have a different arrangement of components.
In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of: acquiring application information of a quartz crystal resonator; extracting elements from the application information of the quartz crystal resonator to obtain application scene element information; determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency; inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold; monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information; based on the resonance frequency monitoring information and the quartz crystal application thickness threshold value, obtaining a film thickness control factor; and controlling the thickness of the quartz crystal coating process based on the film thickness control factor.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of: acquiring application information of a quartz crystal resonator; extracting elements from the application information of the quartz crystal resonator to obtain application scene element information; determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency; inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold; monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information; based on the resonance frequency monitoring information and the quartz crystal application thickness threshold value, obtaining a film thickness control factor; and controlling the thickness of the quartz crystal coating process based on the film thickness control factor. The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A quartz crystal coating thickness control method is characterized by comprising the following steps:
acquiring application information of a quartz crystal resonator;
extracting elements from the application information of the quartz crystal resonator to obtain application scene element information;
determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency;
inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold;
monitoring the quartz crystal film coating process in real time to obtain resonance frequency monitoring information;
based on the resonance frequency monitoring information and the quartz crystal application thickness threshold value, obtaining a film thickness control factor;
and controlling the thickness of the quartz crystal coating process based on the film thickness control factor.
2. The method of claim 1, wherein determining quartz crystal simulation parameters based on the application scenario element information comprises:
according to the application scene element information, extracting and obtaining quartz crystal oscillator application index information;
performing principal component analysis on the quartz crystal oscillator application index information to obtain dimension-reducing quartz crystal oscillator application index information;
acquiring the quartz crystal oscillator application grade according to the application scene element information;
performing application simulation analysis based on the dimension reduction quartz crystal oscillator application index information and the quartz crystal oscillator application grade to obtain a crystal oscillator application simulation information set;
and fusing the application simulation information in the crystal oscillator application simulation information set to obtain the quartz crystal oscillator simulation parameters.
3. The method of claim 2, wherein obtaining dimension-reduced quartz crystal oscillator application index information comprises:
performing decentration treatment on each index information in the quartz crystal oscillator application index information to obtain a covariance matrix;
calculating the covariance matrix to obtain a characteristic value and a characteristic vector of the covariance matrix;
and projecting the index information to the feature vector to obtain the dimension-reduced quartz crystal oscillator application index information after dimension reduction of the index information.
4. The method of claim 1, wherein obtaining a quartz crystal application thickness threshold comprises:
calling to obtain a calibrated quartz crystal thickness analysis model according to the basic information of the quartz crystal;
the calibrated quartz crystal thickness analysis model comprises an input layer, an analysis logic layer and an output layer;
inputting the quartz crystal oscillator simulation parameters into the analysis logic layer through the input layer for analysis to obtain a quartz crystal application thickness threshold;
and outputting the quartz crystal application thickness threshold value as a model output result based on the output layer.
5. The method of claim 4, wherein invoking the obtain a calibrated quartz crystal thickness analysis model based on the quartz crystal base information comprises:
acquiring historical quartz crystal oscillator data information, wherein the historical quartz crystal oscillator data information comprises quartz crystal oscillator data information of various calibration parameter categories;
respectively carrying out model training on the historical quartz crystal oscillator data information according to the calibration parameter categories to construct a quartz crystal thickness analysis model library;
classifying the characteristics of the basic information of the quartz crystal to obtain classified characteristic calibration parameters;
and calling the calibration quartz crystal thickness analysis model from the quartz crystal thickness analysis model library based on the classification characteristic calibration parameters to obtain the calibration quartz crystal thickness analysis model.
6. The method of claim 1, wherein obtaining a film thickness control factor comprises:
obtaining a quartz crystal thickness increment-crystal frequency change function;
inputting the resonance frequency monitoring information into the quartz crystal thickness increment-crystal frequency change function for conversion to obtain quartz crystal thickness monitoring information;
when the quartz crystal thickness monitoring information does not meet the quartz crystal application thickness threshold value, a coating correction instruction is obtained;
and taking the difference value between the thickness monitoring information of the quartz crystal and the thickness threshold value of the quartz crystal application as the film thickness control factor based on the film coating correction instruction.
7. The method of claim 1, wherein the method comprises:
performing analysis effect verification on the calibrated quartz crystal thickness analysis model to obtain model analysis accuracy;
taking the difference value between the model analysis accuracy and the preset analysis accuracy as a model analysis deviation degree;
initializing particle swarm parameters based on a PSO algorithm, and iteratively calculating a particle swarm fitness function according to the model analysis deviation degree and the particle swarm parameters;
when a preset termination condition is reached, obtaining output optimal result particles of the particle swarm fitness function, and mapping the output optimal result particles to the calibrated quartz crystal thickness analysis model for optimization updating training.
8. A quartz crystal coating thickness control system, the system comprising:
the application information acquisition module is used for acquiring the application information of the quartz crystal resonator;
the scene element extraction module is used for extracting elements of the quartz crystal resonator application information to obtain application scene element information;
the simulation parameter determining module is used for determining quartz crystal oscillator simulation parameters according to the application scene element information, wherein the quartz crystal oscillator simulation parameters comprise application temperature, application humidity, application pressure and nominal frequency;
the crystal thickness analysis module is used for inputting the quartz crystal oscillator simulation parameters into a calibrated quartz crystal thickness analysis model to obtain a quartz crystal application thickness threshold;
the coating real-time monitoring module is used for monitoring the quartz crystal coating process in real time to obtain resonance frequency monitoring information;
the film thickness control factor obtaining module is used for obtaining the film thickness control factor based on the resonance frequency monitoring information and the quartz crystal application thickness threshold;
and the film thickness control module is used for controlling the thickness of the quartz crystal in the film coating process based on the film thickness control factor.
9. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any of claims 1 to 7 when the computer program is executed.
10. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 7.
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