JPS5946022A - グロ−放電によるアモルフアスシリコン膜生成用ホツトウオ−ル成長装置の電極装置 - Google Patents
グロ−放電によるアモルフアスシリコン膜生成用ホツトウオ−ル成長装置の電極装置Info
- Publication number
- JPS5946022A JPS5946022A JP57156459A JP15645982A JPS5946022A JP S5946022 A JPS5946022 A JP S5946022A JP 57156459 A JP57156459 A JP 57156459A JP 15645982 A JP15645982 A JP 15645982A JP S5946022 A JPS5946022 A JP S5946022A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- glow discharge
- amorphous silicon
- silicon film
- hot wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 11
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000011810 insulating material Substances 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156459A JPS5946022A (ja) | 1982-09-08 | 1982-09-08 | グロ−放電によるアモルフアスシリコン膜生成用ホツトウオ−ル成長装置の電極装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156459A JPS5946022A (ja) | 1982-09-08 | 1982-09-08 | グロ−放電によるアモルフアスシリコン膜生成用ホツトウオ−ル成長装置の電極装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5946022A true JPS5946022A (ja) | 1984-03-15 |
| JPS639744B2 JPS639744B2 (enrdf_load_stackoverflow) | 1988-03-01 |
Family
ID=15628207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57156459A Granted JPS5946022A (ja) | 1982-09-08 | 1982-09-08 | グロ−放電によるアモルフアスシリコン膜生成用ホツトウオ−ル成長装置の電極装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946022A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820370A (en) * | 1986-12-12 | 1989-04-11 | Pacific Western Systems, Inc. | Particle shielded R. F. connector for a plasma enhanced chemical vapor processor boat |
| JPH02175875A (ja) * | 1988-12-27 | 1990-07-09 | Tokyo Electron Ltd | 反応管の洗浄方法及びその装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0561045U (ja) * | 1991-09-20 | 1993-08-10 | オオノ株式会社 | 提げ手付き合成樹脂製網袋 |
-
1982
- 1982-09-08 JP JP57156459A patent/JPS5946022A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820370A (en) * | 1986-12-12 | 1989-04-11 | Pacific Western Systems, Inc. | Particle shielded R. F. connector for a plasma enhanced chemical vapor processor boat |
| JPH02175875A (ja) * | 1988-12-27 | 1990-07-09 | Tokyo Electron Ltd | 反応管の洗浄方法及びその装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639744B2 (enrdf_load_stackoverflow) | 1988-03-01 |
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