JPS5945679A - Ion implanted bubble device - Google Patents

Abstract

PURPOSE:To imporve the start-stop action margin, by prescribing conditions, such as start-stop directions of a major loop, a minor loop bubble as well as for a holding magnetic field, etc. CONSTITUTION:The wirting and reading major loops 7 and 9 are formed in the directions (1, 0, -1) of a substrate crystal; while a minor loop 6 is formed in the directions (-1, -1, 2). At the same time, the start and stop are set at 0 deg. to the directions (-1, -1, 2). Furthermore the intensity of a holding magnetic field is set at <=150e. As a result, the magnetic bubble is stopped at the cusp of the loop 6 to improve the start-stop action margin of the magnetic bubble for the loop 6. This improves the reliability of an ion implanted bubble device.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to an ion implantation bubble device, and particularly to its start dog direction and hold magnetic field.

(2) Technology's evacuation magnetic bubble The device that uses magnetic bubbles to store information, perform logical operations, etc. is nonvolatile, has high storage density, has low power consumption, is small and lightweight, and is a solid state that does not contain any mechanical elements. Various elements such as elements! It has characteristics.

This magnetic puzzle memory device, as shown in FIG.
A magnetic bubble memory element 1 in which a magnetic puzzle generator, a bubble transfer path, a puzzle detector, etc. are formed on a uniaxially anisotropic thin film formed on a substrate, and bubbles generated in the element. It is composed of magnets 2, 3 for generating a bias magnetic field to keep the bubble stable, and coils 4 and 5 for generating a rotating magnetic field to move the bubble along the transfer path.And a magnetic puzzle. In order to guarantee the stop operation during transfer and the subsequent start operation, a full in-plane magnetic field (this is referred to as a total hold magnetic field) is applied to the element.

(3) Prior Art and Problems In the above-mentioned magnetic bubble memory device, conventionally (the negative bubble transfer path) is formed from a P-malloy thin film by a phototonography method using CVIL. However, recently,
Due to demands for increased storage density, the precision of forming 9-Malloy patterns has exceeded the accuracy τ of photolithography, and a method for forming puzzle transfer paths using ion implantation has been developed. In this ion press-in bubble device, the technology regarding the star i-stop direction and the hold magnetic field of the front i-pi has not yet been established.

(4) Purpose of the Invention In view of the above-mentioned conventional problems, the present invention provides
The purpose of the present invention is to provide an on-injection bubble device in which the direction and hold magnetic field are optimally determined.

(5) Structure and object of the invention According to the present invention, a Q-ion implantation layer is formed on the entire surface of a crystal substrate for a magnetic bubble except for a plurality of disk groove regions, and the connecting bubble is 'In an ion implantation bubble device in which the Isk pattern region is used as a puzzle transfer path, and the Menoya Luno formed by the transfer path is formed in the (1012 direction) of the crystal substrate, and the minor Luno f is formed in the <X12> direction, This is achieved by providing an ion implantation bubble device characterized in that the direction is shifted in the 112-gon direction of the normal crystal to Oo, and the holding magnetic field is set to 150e or more.

(6) Examples of the invention Hereinafter, the embodiment "Misfire+y" will be described in detail with reference to the drawings.

2(2) is a diagram for explaining the memory element of the ion-implanted bugle device according to the present invention, in which (a) shows the crystal axis direction, and (h) shows the pattern constituent sound, respectively. In the same figure, 6 is a minor root for bubble memory, and 7v is
]: Bubble 11 generated from a bubble generator without a figure. Menoyaruno for receiving to transfer to the corresponding position of minor roots 6, 8 is Menoyaru f7 sword) and transformer for transferring minor looses 6 \ bubbles. 9 is a readout menu line for transferring the bug zu12 to a bubble detector (not shown); IO is a transfer output card for transferring the bubble from its minor root 6 to the menu line 9; conductor pattern, I(D indicates rotation 1 percussion peak field, respectively).

The Menoya Lugs 7 and 9 for writing and reading are in the (xoin direction) of the substrate crystal, and the Minor Loose 6 is <112
＞It is structured in the direction. In the case where Menoyalug and minor loops are formed in this way, in the present invention, the start and stop directions are set at 20o, and the hold magnetic field is set at ・L.
It was set to 50e or less.

By making the above arrangement, the bubble slides into the cusp of the minor loose, so that a good operating speed can be obtained in the start-stop operation at the minor loose.

Figure 3 is a diagram showing the relationship between the hold magnetic field 1 (h) and the bias magnetic field HB, which was obtained as a result of an experiment by Kimi et al. In the figure, the horizontal axis represents the hold magnetic field Hl.

The bias magnetic field Hsk is plotted on the vertical axis, and O0 is determined by curve A.
Direction, 180° direction (7) star by curves B and B'
It exhibited tostop characteristics. This experiment t1. ℃ Rotational driving magnetic field HD for the ion-implanted puzzle memory element as shown in Fig. 2
When the bubble is driven by applying 7508 (with a start-stop characteristic of about 35°C9 from the element temperature t/, the hold magnetic field Hh is 9.50e in the 18o0 direction.

6.50e, 3.20e %”f HIt = 0
, and 1.30e, 3.30e in the o0 direction,
The relationship with the bias magnetic field HB was investigated for eight types of 40e% 6.50s. In the case of starting and stopping at 180° in FIG. However, in this case, the holding magnetic field in the O0 direction is an interfering magnetic field, which is not preferable. On the other hand, in the case of start/stop at 0, an operating margin (region in which the puzzle within curve A stably starts/stops) is obtained when a hold magnetic field is applied in the 0° direction.

FIG. 4 is a diagram showing the relationship between the hold magnetic field and the minimum drive magnetic field, which was also obtained as a result of experiments by the inventors.

In the figure, the horizontal axis is the bold magnetic field 1 (b fe), the vertical axis is the minimum driving magnetic field HD, 9, the curve C makes a 0° turn, the curved edge gives the start of the 180' force direction, K + ・The case of 7 is shown. ・The hold magnetic field tth (is the same as 14cO' of the above 84 examples, 80e and 1, 00Q applied (7
When the minimum value is 41 (the relationship between the eye field HD and
Rubbing start] - The minimum drive i1d rise is small for both 0° and 180° horn directions. Hold magnetic field force ()0
If the starting point direction is 1800, rh
, -nob 1' The magnetic field becomes more disturbing than the magnetic field Q.

Therefore, Star I/Stonob direction? By setting the magnetic field to 1:o', and setting the Hall Toy metal to 1one or more [preferably 2 to 80e], both the bias magnetic field and the minimum driving magnetic field can be made good. The holding magnetic field in the 0° direction was JQ at the upper limit in the actual test, but it seems that it can be used sufficiently as the minimum drive magnetic field does not increase until about 1000.

Figure 5 is a diagram showing the motion of the manon r at points a and 11 in Figure 4.
: [4,% Bl<lr i field 1h)k, the vertical axis VC is the bias magnetic field IIB gold, and the curve E shows the case (point a in Fig. 4) with the start and stop angle direction O0 and the hold magnetic field 6.50e. , start point direction 18 by curved edge F
0°, hold magnetic field 9.50e (point b in Figure 4)
The operating margin was shown. As you can see from the figure, it is p star 1.

(7) Effects of the Invention As explained in detail above, the ion implantation bubble device of the present invention obtains good operation in the sister start dog operation by defining the start/stop direction and the hold magnetic field conditions. or tTe, and it has a great effect of contributing to improving its reliability.

[Brief explanation of drawings]

FIG. 1 is a diagram for explaining the structure of a conventional magnetic bubble memory device, FIGS. 2(a) and 2(b) are diagrams for explaining the ion implantation bubble device according to the present invention, and FIG. 3 is a diagram for explaining the structure of a conventional magnetic bubble memory device. FIG. 4 is a diagram showing the relationship between the bias magnetic field, FIG. 4 is a diagram showing the relationship between the hold magnetic field and the minimum drive magnetic field, and FIG. 5 is a diagram showing the operating margin. In the drawing, 6 is a minor rug, 7 is a menoyar rug, 8 is a trough, (;/ ,, -1
, /f4-- conductor pattern for output, 9 for readout, 1O for transfer output, conductor pattern for output. Patent Applicant Fujitsu Limited Patent Attorney Patent Attorney Akira Ki Ki Kazuyuki Nishidate Patent Attorney 1) Yukio Patent Attorney Akiyuki Yamaguchi 401 Figure 3 Hold magnetic field 11h (Oc) Figure 4 Hold magnetic field 111 ．． (Ot・) No. 51! ! Drive magnetic field 11o (Oc)

Claims (1)

[Claims] 1. On a crystal substrate for a magnetic puzzle, an ion implantation layer is formed on the entire surface of the crystal substrate except for the cross pattern head-mounted part to form a kebab pull transfer path in the connecting fiber and 4' turn area, and by the transfer path. The constituting Menoyarou f is aligned in the <-I LJ i ) direction of the crystal substrate (here, my f-#-
7''Jf: In the ion implantation puzzle device formed in the (112) direction, the starting and stopping directions of the bubble are set Oo with respect to the <r r 2 ,> direction of the crystal.
An ion implantation puzzle device characterized in that the hold magnetic field f ] is 50e or more.