JPS58102384A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To read only information and to transfer it to a retrieval bubble on a readout line without dividing a bubbles in a minor loop, by allowing the bubble in the minor loop to perform logical operation with the retrieval bubble on the line. CONSTITUTION:This element consists of a write line 10, write bubble generator 11, minor loops 12-1-12-n, transfer-out gate conductor 13, readout line 14, bubble stretching conductor 15, retrieval bubble generator 16, detector 17, and guard rail 18. Then, the stretching conductor 15 is provided in a hairpin shape from tips of said minor loops 12-1-12-n to the tip of the readout line 14. The readout line 14 is further provided with the retrieval bubble generator 16 at the end part in the opposite direction to the bubble detector 17.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a memory element of a magnetic bubble memory device used as a memory of a terminal of an electronic accounting device.

(2) Background of the technology The magnetic bubble utilization device 01, which uses magnetic bubble memory to store information, perform mathematical operations, etc., has various features such as non-volatility, high storage density, and low power consumption. Since it is a solid-state element C that does not contain any ammonium water, it has very high reliability. Such magnetic bubble memory devices are also required to have increased storage density due to the recent increase in information sensitivity and the demand for smaller devices. However, the elements used in conventional bubble memory devices cannot transfer or transfer bubbles.
Since the pattern is formed using a photolithography method, its dimensional accuracy is limited by the accuracy of exposure to visible light, making it difficult to increase the storage density by reducing the size of the pattern. It's becoming. For this reason, a transfer/seven-turn formation method using ion implantation has recently been developed. As shown in the plan view shown in Figure 1a and the cross-sectional view in Figure 1A, this method uses non-magnetic gadolinium gallium I.
- A thin film 2 of magnetic galvanic acid is formed on a substrate 1 by liquid phase epitaxial growth, and a film of hydrogen, neon, helium, etc. It involves implanting ions. In this way, the element in which the P turn 3 is formed is
The direction of the easy axis force of the magnetization valley of al1/4 coincides with the in-plane direction of arrow a, and the direction of the easy axis of magnetization of the mother turn portion 3 is the same as the direction of the original plane 1, as shown by the arrow. Vertical. Therefore, the bubble 5 is transferred along the circumference of the arm turf 3 as shown by the arrow C by the rotating magnetic field.

This pattern has a shape in which parts of circles (triangles or squares may also be used) are overlapped and arranged in a row. Since the gap t [like a turn] is not required, the dimensional accuracy may be loose, and therefore the turn can be made small and high density can be achieved. However, in the magnetic bubble memory device using this ion implantation method, unlike the conventional magnetic bubble memory device with a major-minor configuration having a so-malloy propagation path, a so-called block that transfers bubbles split simultaneously from a large number of minor roots to the major line all at once. This is difficult to achieve using the Lenolikut method. Therefore, it is desired to implement this method.

(3) Prior art and problems Figure 2 is a diagram showing a conventional renoricator of a magnetic bubble memory element having a 9-Malloy propagation path, and in the same figure, 6 is a pickaxe-shaped .f- Maroino R turn, 7 shows hairpin conductor i4 turn, 8 shows puzzle. When the driving magnetic field HD is in the direction of the arrow, the bubble extends horizontally at the top of the 2-Malloy mother turn 6, so at this time, current flows through the conductor i4 turn 7 and the bias magnetic field i ( If a magnetic field is generated in the same direction as the wave, the bubble 8 will be cut into two.One of the cut bubbles will be transferred to the major line, and the other will remain at the minor root, thus acting as a renoricator. can be made to do so.

However, in the mother turn of the magnetic bubble memory element by ion implantation, when the rotating magnetic field n is in the direction of the arrow as shown in FIG. It's growing. Therefore, it is difficult to cut the bubble 8, and although a method of using two combination lids is considered, the structure becomes complicated and it is difficult to use it as a block renoricator.

(4) Object of the Invention The object of the present invention is to solve the above-mentioned conventional problems and to provide an ion-implanted magnetic bubble memory element that enables Glock linolication.

(5) Structure of the Invention According to the present invention, in a magnetic bubble memory element having a major-minor structure having a plurality of minor roots, a logic operation is performed between a bubble in the minor root or a search bubble on the readout line. This is achieved by providing a magnetic multiple memory element characterized in that by doing so, only information is transmitted to the search bubble on the read line without splitting the bubble in the minor loop.

(6) Examples of the invention Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 4 is a diagram showing essential parts of a magnetic bubble memory device according to the present invention.

In the figure, 10 is a convolution line, 11 is a bubble generator for writing, 12-1 to 12-n are minor roots, 13 is a transfer out gate conductor, 14 is a read line, 15 is a puzzle expansion conductor, 16 is a search bubble generator, 17 is a detector, and 18 is a guard 0 rail.

Note that writing line 10, minor roots 12-1 to 1
Bubble propagation lines such as the 2-1 readout line 14 are formed by ion implantation.

In the same figure, the part surrounded by the chain line is the information readout section according to the present invention, and the conductor 15 for bubble extension is formed in a hairpin shape from the tip of each minor loop, 7" 12. to 12-, toward the tip of the readout line 14. It is provided.

Further, the readout line 14 is provided with a search bubble generator 16 at the end opposite to the bubble detector 17 .

FIG. 5 is an enlarged view of the part surrounded by the chain line in FIG. 4, and the operation of the magnetic bubble memory element according to the present invention will be explained using this diagram.

First, the search bubble generator 16 constantly generates bubbles 111 . . . and sends them to the read line 14. Then, when one page of minor roots 12-4 to 12-n reaches Titsuno ■@θ opposite to the readout line,
A pulsed current is passed through the puzzle stretching conductor. At this time, there is a bubble in Φθ of the minor loop, and there is no bubble in (b), which gives rise to the information sequence "101". ) The puzzle is expanded by ωe) as shown. At this time, the puzzle 7540 generated by the search bubble generator 16 is placed at the position. In this case, the search bubble of ○O receives the large repulsive force of the elongated pulp of ■θ, and jumps to 00 of ft) J-Dore-le 18, respectively. At this time, bubble O is not affected at all. Next, when the expansion pulse is turned off, the bubble in the minor roots contracts, and after that, the header bubble O and the search bubble O are displayed on the readout line 14.
is left behind and guided to the detector. The bubble that jumps to 00 is discarded by the guardrail 18. Therefore detector 1
7, the outputs of header bubble O and search bubble O are detected. That is, information "1010" is obtained.

If you invert this and remove the information in the header bubble, the information column”
101 ''' is obtained and the information in the minor roots is read out.The header bubble indicates the beginning of the information string and is always captured by the detector as information "1", and what follows is the bubble information in the minor roots. This indicates that

(7) Effects of the Invention As described above in detail, the magnetic bubble memory element of the present invention has a simple structure and can copy and read only information without dividing the bubble. Therefore, it is possible to realize professional cresolite even in a magnetic bubble memory element using the ion implantation method.

Note that the present invention is of course applicable not only to ion-implanted devices but also to devices having a 7-Malloy propagation path.

[Brief explanation of drawings]

FIG. 1 is a diagram for explaining an ion-implanted magnetic bubble memory device, FIG. 2 is a diagram for explaining a replicator of a magnetic bubble memory device having a Malloy propagation path, and FIG.
This figure is a diagram for explaining the direction of bubble expansion in the pattern of a magnetic bubble memory element using the ion implantation method.
The figure is a diagram for explaining the magnetic pull memory device according to the present invention, and FIG. 5 is an enlarged view of the part surrounded by the chain line in FIG. 4. In the drawing, 10 is a writing line, 11 is a bubble generator for swearing, 12. ~12- is a minor root,
Reference numeral 13 indicates a conductor of the transfer output 9-, 14 a readout line, 15 a bubble extension conductor, 16 a search bubble generator, 17 a detector, and 18 a guardrail. Patent Applicant Fujitsu Limited Patent Attorney Akira Aoki Patent Attorney Kazuyuki Nishidate 1) Yukio Patent Attorney Akiyuki Yamaguchi Figure 1 (a) (b) Figure 2
Figure 3 1

Claims (1)

[Claims] ■ In a magnetic bubble memory device that has multiple minor roots, the bubbles in the minor roots perform a search/combination and logical operation on the read line, so that only the information is read out on the read line without dividing the puzzle in the minor roots. A magnetic bubble memory element characterized by transmitting a search bubble.