JPH0359519B2 - - Google Patents
Info
- Publication number
- JPH0359519B2 JPH0359519B2 JP56178423A JP17842381A JPH0359519B2 JP H0359519 B2 JPH0359519 B2 JP H0359519B2 JP 56178423 A JP56178423 A JP 56178423A JP 17842381 A JP17842381 A JP 17842381A JP H0359519 B2 JPH0359519 B2 JP H0359519B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic field
- bubble
- garnet crystal
- hold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 23
- 239000002223 garnet Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 7
- 229910000889 permalloy Inorganic materials 0.000 claims description 3
- 230000005381 magnetic domain Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- 230000005415 magnetization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/085—Generating magnetic fields therefor, e.g. uniform magnetic field for magnetic domain stabilisation
Description
【発明の詳細な説明】
本発明は磁気バブルメモリ素子に関し、特にそ
の素子結晶の方向とバブルホールド磁界方向との
関係を規定した磁気バブルメモリ素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble memory device, and more particularly to a magnetic bubble memory device in which the relationship between the direction of the device crystal and the direction of the bubble hold magnetic field is defined.
磁気バブルメモリ装置は記憶が不揮発性であ
り、大容量高密度の記憶が可能、低消費電力、小
型軽量である等種々の特徴をもつているため大容
量メモリとして将来が期待されている。この磁気
バブルメモリ装置は磁気バブルが磁界により磁性
薄膜内を自由に動かすことができることを利用し
たものであつて、そのメモリ素子は、例えばガド
リニウム・ガリウム・ガーネツト（GGG）基板
の上に液相エピタキシヤル成長法により磁性ガー
ネツトの薄膜を形成し、その上にパーマロイ薄膜
により微小パターンを行列させて伝播路を形成し
ておき、バブルのあるところを“１”、ないとこ
ろを“０”として情報を記録するようになつてい
る。 Magnetic bubble memory devices have various characteristics such as non-volatile storage, large capacity and high density storage, low power consumption, small size and light weight, and are therefore expected to have a promising future as a large capacity memory. This magnetic bubble memory device takes advantage of the fact that magnetic bubbles can be moved freely within a magnetic thin film by a magnetic field, and the memory element is formed by liquid phase epitaxy on a gadolinium gallium garnet (GGG) substrate, for example. A thin film of magnetic garnet is formed using the hollow growth method, and a propagation path is formed by arranging micropatterns using a permalloy thin film on top of the thin film. Information is transmitted by assigning "1" where there is a bubble and "0" where there is no bubble. It's starting to record.
またこの磁気バブルメモリ装置は第１図に示す
如く素子１のバブルを安定に保持するため永久磁
石２，２′によりバイアス磁界HBが印加されると
共に、バブルを駆動する回転磁界の起動又は停止
時にバブルをパターン内でスタートストツプし易
い位置に止めておくためのホールド磁界Hhが印
加されている。このホールド磁界Hhは例えば図
の如く素子１を傾けたり、或いは他の永久磁石を
用いて印加している。ところがこのホールド磁界
はバブルを駆動する回転磁界と同様メモリ素子の
面内に印加されるため、該回転磁界量を変動させ
ることからバブルの駆動マージンを減少させるこ
とになる。従つてスタートストツプ特性を低下さ
せずにホールド磁界を下げる必要がある。本発明
はこの要求に基づいて案出されたものである。こ
のため本発明においては、磁性ガーネツト結晶上
に少なくともパーマロイ薄膜パターンよりなるマ
イナーループが複数個並列配置され、該磁性ガー
ネツト結晶の面内には該マイナーループにおける
直接伝播部分のバブル伝播方向に対しほぼ直角に
バブル磁区のスタートストツプ動作を安定させる
面内ホールド磁界が印加される磁気バブルメモリ
素子であつて、前記バブル磁区を保持するための
バイアス磁界を前記磁性ガーネツト結晶の〔111〕
方向に印加したときは、前記面内ホールド磁界を
〔211〕，〔121〕あるいは〔112〕のいずれかの方向
に印加し、バイアス磁界を磁性ガーネツト結晶の
〔111〕方向に印加したときは前記面内ホールド磁
界を〔211〕，〔121〕あるいは〔112〕のいずれか
の方向に印加するように前記磁性ガーネツト結晶
上に前記マイナーループが面付けされたことを特
徴としている。 In addition, in this magnetic bubble memory device, as shown in Fig. 1, a bias magnetic field H B is applied by permanent magnets 2 and 2' to stably hold the bubble of the element 1, and a rotating magnetic field that drives the bubble is started or stopped. At the same time, a hold magnetic field H h is applied to keep the bubble at a position where it is easy to start and stop within the pattern. This hold magnetic field H h is applied, for example, by tilting the element 1 as shown in the figure, or by using another permanent magnet. However, since this hold magnetic field is applied within the plane of the memory element in the same way as the rotating magnetic field that drives the bubble, the amount of the rotating magnetic field is varied, thereby reducing the bubble driving margin. Therefore, it is necessary to lower the hold magnetic field without deteriorating the start-stop characteristics. The present invention was devised based on this requirement. Therefore, in the present invention, a plurality of minor loops each made of at least a permalloy thin film pattern are arranged in parallel on a magnetic garnet crystal, and within the plane of the magnetic garnet crystal, there are approximately A magnetic bubble memory element in which an in-plane hold magnetic field is applied to stabilize the start-stop operation of a bubble magnetic domain at right angles, wherein a bias magnetic field for holding the bubble domain is applied to the [111] of the magnetic garnet crystal.
When the bias magnetic field is applied in the [111] direction of the magnetic garnet crystal, the in-plane hold magnetic field is applied in the [211], [121], or [112] direction, and when the bias magnetic field is applied in the [111] direction of the magnetic garnet crystal, the in-plane hold magnetic field is applied in the [111] direction of the magnetic garnet crystal. It is characterized in that the minor loop is surfaced on the magnetic garnet crystal so as to apply an in-plane hold magnetic field in any one of [211], [121], or [112] directions.
以下添付図面に基づいて本発明の実施例につき
詳細に説明する。 Embodiments of the present invention will be described in detail below based on the accompanying drawings.
第２図に実施例を示す。図おいて符号３は
GGG基板の上に磁性ガーネツトの薄膜を形成し
たウエーハ、４はその上にバブル発生器Ｇ，メジ
ヤーラインＭ，マイナーループｍ，デイテクタＤ
等のパターンを形成した素子、５の白ぬき矢印で
示す方向は素子のスタートストツプ動作を安定に
するために印加すべき面内のホールルド磁界方向
であり、ウエーハ３の外周に記した符号は磁性ガ
ーネツト結晶の（111）面から見た結晶軸方向を
示したものである。そして素子４のパターンは磁
性ガーネツト結晶の（111）面に形成されており、
バブルを保持するためのバイアス磁界HBが該磁
性ガーネツト結晶の〔111〕方向に印加されると
きは、白ぬき矢印で示す面内ホールド磁界方向５
を該ガーネツト結晶の〔211〕，〔121〕あるいは
〔112〕方向の何れか（図では〔211〕方向）に一
致するように面付けされれている。この際ホール
ド磁界方向５は第２図および例えば“特開昭55−
97084号公報”に開示される如く、通常と同様に
マイナーループｍにおける直線伝播部分のバブル
伝播方向に対しほぼ直角に印加される。またバイ
アス磁界方向が前記とは逆方向の〔111〕方向に
印加される場合には面内ホールド磁界方向を
〔211〕，〔121〕あるいは〔112〕方向のいずれかに
一致するようにしたことである。なお素子４のパ
ターンが磁性ガーネツト結晶の〔111）面に形成
される場合でも上記面付方法は適用される。 An example is shown in FIG. In the figure, code 3 is
A wafer in which a thin film of magnetic garnet is formed on a GGG substrate, 4 is a bubble generator G, a major line M, a minor loop m, and a detector D.
The direction indicated by the white arrow 5 is the direction of the in-plane hold magnetic field that should be applied to stabilize the start-stop operation of the element, and the symbol written on the outer periphery of the wafer 3 is This shows the crystal axis direction as seen from the (111) plane of a magnetic garnet crystal. The pattern of element 4 is formed on the (111) plane of the magnetic garnet crystal.
When the bias magnetic field H B for holding bubbles is applied in the [111] direction of the magnetic garnet crystal, the in-plane holding magnetic field direction 5 shown by the white arrow
The garnet crystal is faced in such a way that it corresponds to the [211], [121], or [112] direction (the [211] direction in the figure). At this time, the direction of the hold magnetic field 5 is as shown in FIG.
As disclosed in ``Publication No. 97084'', the bias magnetic field is applied almost perpendicularly to the bubble propagation direction of the linear propagation part in the minor loop m as usual. Also, if the bias magnetic field direction is in the [111] direction opposite to the above When applied, the in-plane hold magnetic field direction is set to match either the [211], [121] or [112] direction.The pattern of element 4 is the [111] direction of the magnetic garnet crystal. The above-mentioned imposition method is applied even when the image is formed on a surface.
このように形成された本実施例は第２図の如く
磁性ガーネツト結晶に〔111〕方向の磁界を印加
した場合、該結晶の〔211〕，〔121〕，〔112〕の３
方向がガーネツト結晶特有の磁化容易軸であり、
また〔111〕方向に磁界を印加したときは〔211〕，
〔121〕，〔112〕の３方向が磁化容易軸であるため
に、これらの磁化容易軸方向と面内ホールド磁界
方向が一致するように面付された本実施例はその
ホールド磁界の値を他の方向に面付けされた素子
に比して最も低くすることができる。 In this example formed in this way, when a magnetic field in the [111] direction is applied to a magnetic garnet crystal as shown in FIG.
The direction is the axis of easy magnetization unique to garnet crystals,
Also, when a magnetic field is applied in the [111] direction, [211],
Since the three directions [121] and [112] are easy axes of magnetization, this example, which is surfaced so that these easy axes of magnetization and the in-plane hold magnetic field direction coincide, has a value of the hold magnetic field. It can be made lowest compared to elements facing in other directions.
第３図はホールド磁界が磁化容易軸方向である
〔211〕方向、中間方向である〔110〕方向および
磁化困難軸方向である〔211〕方向になるように
素子をそれぞれ磁性ガーネツト結晶上に面付けと
たとき、各素子のホールド磁界特性を示したもの
である。図は縦軸にバイアス磁界を、横軸にホー
ルド磁界をとり、曲線Ａにより〔211〕方向、曲
線Ｂにより〔110〕方向、曲線Ｃにより〔211〕方
向をそれぞれホールド磁界方向とした素子の特性
を示した。図よりホールド磁界が磁化容易軸方向
である。〔211〕方向になるように面付けしたとき
が最小ホールド磁界が最も小さいことがわかる。 Figure 3 shows the elements placed on a magnetic garnet crystal so that the hold magnetic fields are in the [211] direction, which is the easy axis direction, the [110] direction, which is the intermediate direction, and the [211] direction, which is the hard magnetization axis direction. It shows the hold magnetic field characteristics of each element when attached. The diagram shows the bias magnetic field on the vertical axis and the hold magnetic field on the horizontal axis, and the characteristics of the element with curve A as the [211] direction, curve B as the [110] direction, and curve C as the hold magnetic field direction. showed that. From the figure, the hold magnetic field is in the easy magnetization axis direction. It can be seen that the minimum hold magnetic field is the smallest when facing in the [211] direction.
以上説明した如く本発明の磁気バブルメモリ素
子はウエーハ上に面付けする場合の方向を規定す
ることにより、その最小ホールド磁界を最も小さ
くすることを可能としたものであつて、磁気バブ
ルメモリの駆動マージンの増加に寄与するもので
ある。 As explained above, the magnetic bubble memory element of the present invention makes it possible to minimize the minimum hold magnetic field by specifying the direction in which it is placed on a wafer. This contributes to increasing margins.
第１図は磁気バブルメモリ素子のホールド磁界
印加方法を説明する説明図、第２図は本発明にか
かる実施例の磁気バブルメモリ素子を説明する説
明図、第３図はウエーハ上の各方向に面付けされ
た各素子のホールド磁界特性を示した特性図であ
る。
３……ウエーハ、４……素子、５……ホールド
磁界印加方向。
FIG. 1 is an explanatory diagram illustrating a method of applying a hold magnetic field to a magnetic bubble memory element, FIG. 2 is an explanatory diagram illustrating a magnetic bubble memory element according to an embodiment of the present invention, and FIG. FIG. 3 is a characteristic diagram showing the hold magnetic field characteristics of each surface-mounted element. 3...Wafer, 4...Element, 5...Hold magnetic field application direction.
Claims (1)
イ薄膜パターンよりなるマイナーループが複数個
並列配置され、該磁性ガーネツト結晶の面内には
該マイナーループにおける直接伝播部分のバブル
伝播方向に対しほぼ直角にバブル磁区のスタート
ストツプ動作を安定させる面内ホールド磁界が印
加される磁気バブルメモリ素子であつて、前記バ
ブル磁区を保持するためのバイアス磁界を前記磁
性ガーネツト結晶の〔111〕方向に印加したとき
は、前記面内ホールド磁界を〔211〕，〔121〕ある
いは〔112〕のいずれの方向に印加し、バイアス
磁界を磁性ガーネツト結晶の〔111〕方向に印加
したときは前記面内ホールド磁界を〔211〕，
〔121〕あるいは〔112〕のいずれかの方向に印加
するように前記磁性ガーネツト結晶上に前記マイ
ナーループが面付けされたことを特徴とする磁気
バブルメモリ素子。[Scope of Claims] 1. A plurality of minor loops made of at least permalloy thin film patterns are arranged in parallel on a magnetic garnet crystal, and within the plane of the magnetic garnet crystal, there is approximately a direction of bubble propagation in the direct propagation portion of the minor loop. A magnetic bubble memory element in which an in-plane hold magnetic field is applied to stabilize the start-stop operation of a bubble magnetic domain at right angles, and a bias magnetic field for holding the bubble domain is applied in the [111] direction of the magnetic garnet crystal. When the in-plane hold magnetic field is applied in any of the [211], [121], or [112] directions, and when the bias magnetic field is applied in the [111] direction of the magnetic garnet crystal, the in-plane hold magnetic field is applied in the [111] direction of the magnetic garnet crystal. [211],
A magnetic bubble memory device, characterized in that the minor loop is surfaced on the magnetic garnet crystal so that an electric field is applied in either the [121] or [112] direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178423A JPS5883380A (en) | 1981-11-09 | 1981-11-09 | Magnetic bubble memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178423A JPS5883380A (en) | 1981-11-09 | 1981-11-09 | Magnetic bubble memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5883380A JPS5883380A (en) | 1983-05-19 |
| JPH0359519B2 true JPH0359519B2 (en) | 1991-09-10 |
Family
ID=16048235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56178423A Granted JPS5883380A (en) | 1981-11-09 | 1981-11-09 | Magnetic bubble memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5883380A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050690A (en) * | 1983-08-30 | 1985-03-20 | Fujitsu Ltd | Control system of magnetic bubble memory |
| JPS60163292A (en) * | 1984-02-01 | 1985-08-26 | Hitachi Ltd | Magnetic bubble memory element |
| JPS61184782A (en) * | 1985-02-12 | 1986-08-18 | Hitachi Ltd | Magnetic bubble memory |
-
1981
- 1981-11-09 JP JP56178423A patent/JPS5883380A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5883380A (en) | 1983-05-19 |
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