JPS6118275B2 - - Google Patents
Info
- Publication number
- JPS6118275B2 JPS6118275B2 JP9077981A JP9077981A JPS6118275B2 JP S6118275 B2 JPS6118275 B2 JP S6118275B2 JP 9077981 A JP9077981 A JP 9077981A JP 9077981 A JP9077981 A JP 9077981A JP S6118275 B2 JPS6118275 B2 JP S6118275B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- bubble
- magnetic
- driving
- hold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 13
- 230000015654 memory Effects 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/085—Generating magnetic fields therefor, e.g. uniform magnetic field for magnetic domain stabilisation
Description
【発明の詳細な説明】
本発明は磁気バブルメモリデバイスの駆動方法
に関し、特にバブルの始動、停止する際の回転磁
界の印加方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for driving a magnetic bubble memory device, and more particularly to a method for applying a rotating magnetic field when starting and stopping a bubble.
磁気バブルメモリデバイスの構造は第1図に示
すように磁気バブルメモリチツプ1、バイヤス磁
界をつくる永久磁石2,2′、バブルを駆動する
ための回転磁界をつくるコイル3および4、外部
磁界を遮断するシールドケース5等により構成さ
れている。 The structure of the magnetic bubble memory device, as shown in Figure 1, consists of a magnetic bubble memory chip 1, permanent magnets 2 and 2' that create a bias magnetic field, coils 3 and 4 that create a rotating magnetic field to drive the bubble, and blocks external magnetic fields. It is composed of a shield case 5 and the like.
磁気バブルの転送原理は薄膜上に例えばパーマ
ロイによる多数の薄膜微細パターンを形成してバ
ブル転送路となし、この転送路に水平に回転磁界
を与え、パターンの磁極を繰返し反転させること
によりバブルを転送するのである。この回転磁界
はチツプ1を包囲し直交するコイル3及び4に例
えば第2図に示す如き90゜位相が異なる三角波電
流6及び7を流すことによつて行なわれる。 The principle of magnetic bubble transfer is to form a large number of thin film fine patterns, such as permalloy, on a thin film to create a bubble transfer path, apply a rotating magnetic field horizontally to this transfer path, and repeatedly reverse the magnetic poles of the pattern to transfer bubbles. That's what I do. This rotating magnetic field is produced by passing triangular wave currents 6 and 7 having a phase difference of 90 DEG as shown in FIG.
また磁気バブルメモリデバイスはその非揮発性
を保証するため、面内回転磁界が印加されない状
態で第3図に示す如くパターン8に白ぬき矢印方
向(スタート、ストツプ方向)に直流のホールド
磁界HHを加え(回転磁界55Oeに対し約5Oe)、
バブル9の安定保持をはかつている。従つて第2
図に示した三角波駆動の磁界リサジユーは第4図
に示す如くホールド磁界により+X方向にシフト
し、例えば駆動磁界55Oeに対しH(-x)nax=
50Oe、H(+H)nax=60Oeと正負方向で10Oeの差
が生ずる。 In addition, in order to guarantee its non-volatility, the magnetic bubble memory device has a direct current hold magnetic field H (approximately 5 Oe for a rotating magnetic field of 55 Oe),
Bubble 9 is maintained stably. Therefore, the second
The magnetic field resurge of the triangular wave drive shown in the figure is shifted in the +X direction by the hold magnetic field as shown in Figure 4. For example, for a drive magnetic field of 55 Oe, H (-x)nax =
50Oe, H (+H)nax = 60Oe, resulting in a difference of 10Oe in the positive and negative directions.
一方チツプの駆動磁界−バイアス磁界特性は、
第5図の如くである。図は縦軸にバイアス磁界
を、横軸に駆動磁界をとり、曲線Aによりバイア
スマージン上限を、曲線Bにより下限を示した。
なお実線は連続動作の場合、点線はスタート、ス
トツプ動作の場合を示している。チツプはメモリ
システムとして電源変動等に対して安定動作を保
証するため、駆動磁界の中心値HD1に対し±ΔH
Dの範囲で充分なバイアスマージンを確保する必
要がある。このことはチツプに加わる磁界は−X
方向がHD1−ΔHD−HH、+X方向がHD1+ΔHD
+HHとなつており、例えばHD1=55Oe、ΔHD
=10Oe、HH=5OeとするとH(-x)nax=40Oe、H
(+x)nax=70Oeと30Oeも差がついてしまうことに
なる。 On the other hand, the driving magnetic field-bias magnetic field characteristics of the chip are:
As shown in Figure 5. In the figure, the vertical axis represents the bias magnetic field, and the horizontal axis represents the drive magnetic field. Curve A represents the upper limit of the bias margin, and curve B represents the lower limit.
Note that the solid line shows the case of continuous operation, and the dotted line shows the case of start and stop operation. As a memory system, the chip guarantees stable operation against power supply fluctuations, etc. , so that
It is necessary to ensure sufficient bias margin within the range of D. This means that the magnetic field applied to the chip is −X
The direction is H D1 −ΔH D −H H , and the +X direction is H D1 +ΔH D
+H H , for example, H D1 = 55Oe, ΔH D
= 10Oe, H H = 5Oe, H (-x)nax = 40Oe, H
(+x)nax = 70Oe and 30Oe will also be different.
実際のチツプではスタート、ストツプ動作を含
まない連続動作に対しては第5図の如く、この駆
動磁界範囲で安定なバイアスマージンを得ること
は比較的容易であるが、スタート、ストツプ動作
時は一般的に高い駆動磁界において、そのバイア
スマージンが劣化する。この現象は特に高密度バ
ブル素子で顕著である。この劣化はスタート、ス
トツプ時の磁界変化が第4図のように連続動作時
と異なるためである。バブルの動作を観察する
と、例えば、スタート時にHxがHD1からHD1+
ΔHDに増加する際第6図に示すようにバブル9
が矢印のように他の磁極にとび移つてしまうこと
が原因している。本発明はこの欠点を改良するた
めに案出されたものである。 In an actual chip, it is relatively easy to obtain a stable bias margin in this driving magnetic field range for continuous operation that does not include start and stop operations, as shown in Figure 5, but during start and stop operations, At high driving magnetic fields, the bias margin deteriorates. This phenomenon is particularly noticeable in high-density bubble devices. This deterioration is due to the fact that the magnetic field changes at start and stop times are different from those during continuous operation as shown in FIG. Observing the behavior of the bubble, for example, at the start H x changes from H D1 to H D1 +
As shown in Figure 6, when increasing ΔHD , the bubble 9
The cause is that the magnetic field jumps to other magnetic poles as shown by the arrow. The present invention has been devised to improve this drawback.
このため本発明においては、回転磁界で制御す
る磁気バブルメモリの駆動方法において、バブル
の保持位置(ホールド位置)よりの始動(スター
ト)時にはホールド方向磁界が定常値に達する前
に磁界の回転を開始すること、及び停止(ストツ
プ)時にはホールド方向磁界を磁界回転が停止す
る前に減少せしめることの、少なくとも何れか一
方を用いることを特徴とするものである。 Therefore, in the present invention, in the driving method of a magnetic bubble memory controlled by a rotating magnetic field, when starting from a bubble holding position (hold position), the rotation of the magnetic field is started before the holding direction magnetic field reaches a steady value. The present invention is characterized in that at least one of the following is used: and at the time of stopping, the hold direction magnetic field is reduced before the magnetic field rotation stops.
以下添付図面に基づいて本発明方法を詳細に説
明する。 The method of the present invention will be explained in detail below based on the accompanying drawings.
第7図に本発明によるリサジユーを示し、第8
図にその時の駆動流波形の一実施例を示す。 Fig. 7 shows a resage according to the present invention, and Fig. 8
The figure shows an example of the driving flow waveform at that time.
本発明は第7図に示す如くスタート時に(矢印
aホールド方向の駆動磁界を、定常値P点に達す
る前にQ点より磁界の回転を開始し、ストツプ時
(矢印b)には磁界の回転が停止する点P′より前
のR点より駆動磁界を減少せしめるようにしたも
のである。例えば+Xのスタートストツプ時の磁
界を2HHまで減らしても、まだH(-x)naxと同じ磁
界値でありスタートストツプ前後の転送特性に悪
影響を与えることはない。また第8図に示した波
形は、三角波駆動回路に加えるタイミングパルス
をスタートストツプ時に従来より多少(t時間)
ずらすことにより容易に第7図のリサジユーを画
かせることができるようにしたものである。なお
本発明は上記スタート、ストツプ動作のうち、何
れか一方のみを用いることも差支えない。また磁
気バブルメモリの駆動方式には三角波方式の他
に、サイン波方式、台形波方式等があるが本発明
はいずれの場合にも適用可能なことはリサジユー
図形でみれば容易に理解できる。 As shown in FIG. 7, the present invention starts rotating the driving magnetic field in the hold direction (arrow a) from point Q before reaching the steady value point P, and when stopping (arrow b), the magnetic field rotates. The drive magnetic field is decreased from point R before the point P ' where the + It is a magnetic field value and will not have an adverse effect on the transfer characteristics before and after the start/stop.The waveform shown in Figure 8 also shows that the timing pulse applied to the triangular wave drive circuit is slightly smaller (time t) than before at the start/stop.
By shifting it, it is possible to easily draw the resage shown in FIG. 7. Note that the present invention may use only one of the start and stop operations described above. In addition to the triangular wave method, there are other driving methods for magnetic bubble memories, such as a sine wave method and a trapezoidal wave method, and it can be easily understood by looking at the Lissage figure that the present invention can be applied to any of these methods.
以上説明した如く、本発明方法は連続動作特性
を劣化させず、スタートストツプ特性を改善で
き、また駆動回路を複雑にすることなく充分な駆
動磁界マージンを確保できるので、バブルメモリ
の安定動作、ひいてはコストダウンに効果が大き
い。 As explained above, the method of the present invention can improve the start-stop characteristics without deteriorating the continuous operation characteristics, and can secure a sufficient drive magnetic field margin without complicating the drive circuit, so that the bubble memory can operate stably. In turn, this is highly effective in reducing costs.
第1図は磁気バブルメモリの1例の斜視図、第
2図は従来のバブル駆動電流の波形図、第3図は
パターンとバブルとホールド磁界の関係を示した
説明図、第4図は従来の回転磁界のリサジユー
図、第5図は駆動磁界−バイアス磁界特性図、第
6図はスタートストツプ動作不良を説明する説明
図、第7図は本発明にかかる回転磁界のリサジユ
ーの1例の説明図、第8図は本発明にかかる実施
例の駆動電流の波形図である。
1……チツプ、2,2′……永久磁石、3,4
……コイル、5……シールドケース、8……パー
マロイパターン、9……バブル。
Figure 1 is a perspective view of an example of a magnetic bubble memory, Figure 2 is a waveform diagram of a conventional bubble drive current, Figure 3 is an explanatory diagram showing the relationship between a pattern, a bubble, and a hold magnetic field, and Figure 4 is a conventional diagram. FIG. 5 is a driving magnetic field-bias magnetic field characteristic diagram, FIG. 6 is an explanatory diagram illustrating a start-stop malfunction, and FIG. 7 is an example of a resurgence of a rotating magnetic field according to the present invention. The explanatory diagram, FIG. 8, is a waveform diagram of the drive current in the embodiment according to the present invention. 1... Chip, 2, 2'... Permanent magnet, 3, 4
... Coil, 5 ... Shield case, 8 ... Permalloy pattern, 9 ... Bubble.
Claims (1)
方法において、バブルの保持位置(ホールド位
置)よりの始動(スタート)時には、ホールド方
向磁界が定常値に達する前に磁界の回転を開始す
ること、及び停止(ストツプ)時にはホールド方
向磁界を磁界回転が停止する前に減少せしめるこ
と、の少なくとも何れか一方を用いることを特徴
とする磁気バブルメモリの駆動方法。1. In a method of driving a magnetic bubble memory controlled by a rotating magnetic field, when starting from a bubble holding position (hold position), the rotation of the magnetic field must be started and stopped before the hold direction magnetic field reaches a steady value. A method for driving a magnetic bubble memory, characterized in that at least one of the following methods is used: (stop) at times, the hold direction magnetic field is reduced before the magnetic field rotation stops.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9077981A JPS57205888A (en) | 1981-06-15 | 1981-06-15 | Driving method of magnetic bubble memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9077981A JPS57205888A (en) | 1981-06-15 | 1981-06-15 | Driving method of magnetic bubble memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57205888A JPS57205888A (en) | 1982-12-17 |
JPS6118275B2 true JPS6118275B2 (en) | 1986-05-12 |
Family
ID=14008084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9077981A Granted JPS57205888A (en) | 1981-06-15 | 1981-06-15 | Driving method of magnetic bubble memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57205888A (en) |
-
1981
- 1981-06-15 JP JP9077981A patent/JPS57205888A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57205888A (en) | 1982-12-17 |
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