JPS58105479A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To improve the detecting efficiency of a bubble magnetic domain, by tilting the direction of the pattern of a bubble expanding conductor of a bubble magnetic domain detector to the bubble transferring direction. CONSTITUTION:A pattern 4 of a bubble expanding conductor has a hairpin form. The longer side of the patter 4 is tilted to the direction which is rectangular or not in parallel to the bubble transferring direction shown by an arrow B of a transfer pattern 3. The angle theta of inclination of the pattern 4, that is, the angle of inclination of a conductor pattern to the line vertical to the bubble transferring direction is selected so that the maximum detecting efficiency is obtained when the application of pulses is conpleted.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a memory element of a magnetic bubble memory device used as a memory of a terminal of an electronic computing device.

(2) Background of the technology Magnetic bubble memory devices, which have recently come into use, are nonvolatile, capable of large-capacity, high-density storage, low power consumption, small size, and light weight. It is expected to have a future as a large-capacity memory because it has various characteristics such as high reliability because it is an integrated device that does not contain any components.

The memory element used in this magnetic Papulme cage device is made by forming a thin film of p-magnetic garnet on a gadolinium-gadolinium-garnet single-crystal substrate by the liquid-phase epitaxial growth method, and on top of that a thin film of nano-malloy. Or, by using ion implantation method to form a bubble transfer luster turn, you can change the color.
If there is a bubble in a specific place in the Seven Transfer Turn
”, otherwise the information is stored as @0#.

In such a magnetic/four-pull memory device, a bubble magnetic domain detector that detects the presence or absence of a four-pull uses a bubble enlarger on a strip-shaped magnetic thin film to detect bubbles using the magnetoresistive effect produced in the magnetic thin film. It has a structure like this.

(3; Prior art and problems Figure 1 is a diagram for explaining the conventional bubble magnetic domain detector t. In the same figure, l is a transfer nolin, and a conductor pattern t for bubble extension formed in the shape of a 2Fi hairpin is shown.
are shown respectively.

In addition, the band-shaped fly-like Noreen has a hairpin-shaped conductor pattern! Although it is provided inside, the figure is omitted.

The conventional bubble magnetic domain detector is shown in the arrow A as shown in the JIEI diagram.
The conductor no lean 2t-
However, if the conductor pattern is arranged perpendicularly or parallel to the bubble transfer direction, there is a drawback that the L detection efficiency becomes low during high-speed driving.

(4) Purpose of the Invention The present invention addresses the above-mentioned drawbacks of the prior art and has an object to provide a magnetic bubble memory device having a bubble domain detector with high efficiency in detecting bubble domains.

(5) Structure of the Invention and Purpose According to the present invention, a current tube is caused to flow through a bubble detection T-conductor line by a driving magnetic field rotating in a plane, and the magnetic field is locally lowered and the magnetic field is extended above the bubble magnetic domain to be detected. In a magnetic bubble memory device containing a bubble magnetic domain detector using the resistive effect, the bubble magnetic domain detector has a conductor lean arranged so that the bubble magnetic domain extends in a direction that is not perpendicular to or parallel to the bubble transfer direction. This is achieved by providing a magnetic bubble memory device with a t-1# mold.

(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 2 is a diagram showing the structure of a bubble magnetic domain detector of a magnetic bubble memory device according to the present invention.

In the same figure, 3 is a transfer tree for transferring bubbles/
, 4 indicate the conductor and turn t for bubble expansion, respectively. Note that the magnetic thin film pattern for bubble detection is omitted from illustration.

In this embodiment, a core 11 for bubble expansion is used as shown in figure IN2.
The 1' line 4 has a hairpin shape, and its longitudinal direction is not perpendicular or parallel to the bubble transfer direction indicated by the arrow B of the transfer nolin 3.

The operation of this embodiment configured in this way will be described next.

The bubbles are transferred to the upper transfer tree 73 as the driving magnetic field rotates. This Baburka Transfer Noreen 30 Kasug 3
In phase a, a magnetic field is applied to the conductor pattern 4 so as to lower the local magnetic field of the cusp 1. When a bubble exists in the cough cusp 3a, the bubble extends into a striped magnetic domain, and the conductor pattern A magnetoresistive structure element such as /f-malloy thin film placed in the center of It is proportional to the detection efficiency, which is determined by the direction of the field. By the way, the stripe length 1 increases in proportion to the arm impression time T, but the maximum T that can be applied is determined by the driving frequency.

Therefore, the inclination angle # of conductor pattern 4 (# = the inclination angle of the other conductor pattern perpendicular to the bubble transfer direction)
The angle tt should be selected so that the maximum detection efficiency can be obtained at the end of the I4 pulse application.

FIG. 3 shows experimental results of the relationship between the inclination angle O of the conductor pattern for bubble expansion and the detection voltage in the magnetic bubble memory negative-value pull magnetic domain detector of the present invention.

In this case, the frequency of the driving magnetic field is 100KH! .

The bias magnetic field is 3400·, and the drive magnetic field is 500e.

Experiments were carried out under the conditions of bubble extension /l Lus F1a = -13 g'%/Lus width lOμS. Under such conditions, the peak of the detected voltage is around 0=45'', or this value varies depending on the conditions.

(5) Effects of the Invention As explained in detail above, the direction of the bubble extension conductor I of the bubble magnetic domain detector on the magnetic bubble memory element wire of the present invention is not perpendicular or parallel to the bubble transfer direction. By providing it at an angle, it is possible to obtain a high detection efficiency of bubble magnetic domains.

[Brief explanation of the drawing]

Figure aR1 is a diagram for explaining the bubble magnetic domain detector of the conventional magnetic i4 straight memory device, and Figure 2 is a diagram showing an addendum of the bubble magnetic domain detector of the magnetic bubble memory device according to the present invention.
FIG. 3 is a nine-line diagram showing the relationship between the inclination angle of the conductor pattern for bubble extension and the detected voltage of the magnetic bubble memory device according to the present invention. In the drawings, 3 indicates bubble transfer/l-turn, and 4 indicates conductor I-lean.

Claims (1)

[Claims] 1. The bubble is driven by a driving magnetic field that rotates in a plane, and the bubble is detected by applying a current to a conductor pattern to locally lower the magnetic field and elongate the bubble magnetic domain to detect the bubble. In a magnetic bubble memory device having a bubble domain detector using a bubble magnetic domain detector, a conductor pattern is arranged so that the bubble magnetic domain t extends in a direction that is not perpendicular to or parallel to the bubble transfer direction. A magnetic bubble memory element that turns into mold.