JPS5943861A - Louver type chemical vapor deposition device - Google Patents

Abstract

PURPOSE:To provide a chemical vapor deposition device which expands a uniformly coatable region and has improved workability by holding substrates in the form of a louver with respect to the flow of reacting gas in a reaction chamber. CONSTITUTION:Plural pieces of substrates 15 to be coated are held by holders 16 in a reaction chamber 10 of a CVD device and are arranged apart from each other at suitable spacings 17 in the form of a louver in many and plural arrays. Reacting gas is ejected like arrows G from the ejection ports of gas ejection mechanisms 11, and form vapor-deposited films on the surfaces of the substrates 15 in the 1st array. The gas together with the by-product of reaction advance by passing-the spacings 17 and form vapor-deposited films on the surfaces of the substrates 15 in the 2nd array. The gas passes the spacings 17 and the slits of a partition wall 13 and is discharged through a waste gas collection chamber 12 and discharging holes 14. Always fresh reacting gas arrives at the surfaces of the substrates 15 and the evenly and uniformly vapor-deposited films are formed over the entire part of the substrates disposed in a wide region.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a Rootsmo chemical vapor deposition (CVD) apparatus, and the OVD apparatus in the present invention includes both a plasma OVD apparatus and a reduced pressure OVD apparatus.

In the OVD method, useless and sometimes harmful by-products are generated along with the product (or deposition material), and it is not possible to uniformly deposit a large area or range of substrates, which increases the size of the equipment. However, these drawbacks cannot be overcome, and it is well known to those skilled in the art that the effective area is tAOOtnm-φ, although there are some differences depending on the flow rate, flow rate, etc. of the reaction gas.

As a result of considering expanding the effective area for vapor deposition by the conventional method as described above, the inventors of the present invention have found that the substrates to be coated are held in a Rootsmer shape (blinding), and the reactive gas is distributed between the substrates arranged in the Rootsmer shape. The inventors have discovered that this problem can be solved by making the reaction gas flow flow backward from the gap, and the gist of the present invention is to have the structure as specified in each claim. be.

The configuration and effects of the present invention will be explained in detail below in comparison with the conventional system.

FIG. 1 shows an example of a conventional OVD apparatus, in which 1 is a reaction chamber, and the substrate 2 to be coated is supported by a holder 3 and is moved in the direction of the arrow. Reference numeral 1 is a reactive gas ejection mechanism (also serves as an electrode in the case of a plasma 0VD device), and a large number of reaction gas ejection holes are provided on the surface facing the substrate λ as shown in the figure. j is a discharge hole for the reacted gas, and t is a heater for the substrate λ. In this kind of conventional method, the reaction gas (JG) is ejected from the reaction gas ejection mechanism Hiroshi in the direction of arrow G and forms a vapor deposited layer on the substrate λ, but at this time, reaction by-products are naturally generated and are distributed around the reaction area. The flowing reaction gas will contain this by-product, so the effective reaction area is limited to #1 solo 00 simple φ1 degree as mentioned above, and even if the device itself is enlarged, this effective area cannot be expanded. is not possible.

Figures λ to 7 are several examples showing schematic diagrams of the apparatus of the present invention, and the following description will be given based on the illustration of a specific example of the apparatus of the present invention.

FIG. 2 is a schematic plan view showing an example of the device of the present invention, and FIG. 3 is a schematic cross-sectional view taken along line 1 [[-111] of FIG.
indicates a reaction chamber, and a reaction gas blowout mechanism l/ is disposed in one side of the reaction chamber io. On the other side of the reaction chamber IO, a reaction chamber 7.2 containing reacted gas (containing by-products) is provided via a partition wall 13 provided with slits, etc. This is provided. Several holders 1lKa are held to cover the parts to be covered, and as shown in the figure, they are arranged in large numbers in rows in a roots-like manner with appropriate gaps 17 between them.

In the apparatus of the present invention configured as described above, one reaction gas (R, G
, ) is ejected from the ejection hole of the gas ejection mechanism l/ as shown by arrow G, forms a vapor deposited film on the surface of the substrate 11 in the first row, passes through the gap 17 together with the reaction by-products, and advances. A vapor deposited film is generated on the surface of the substrate is, and then the gap between the rows of cylinders/
7, passes through the slit in the partition wall /3, is collected in the annual income chamber 12, and is discharged through the exhaust hole l≠.

Therefore, according to the device of the present invention, the substrate l disposed in the device
! Fresh reactive gas always reaches the surface to be evaporated, and the roots of the substrate/! It is possible to produce a uniform and uniform deposited film over the entire area.

Figure ≠ is a schematic diagram showing an example in which a group of substrates arranged in a Roots-Maw shape is arranged at a constant angle with respect to the flow of the reactant gas.

The above specific example describes the Nototsuchi type operation, but the base group maintains their mutual relationship (spacing and inclination angle) and moves in the direction perpendicular to the flow of the reactant gas while facing the flow of the gas. Those skilled in the art will easily understand that this allows an inline method.

FIG. 5 shows a schematic cross-sectional view of the vertical in-line system of the present invention. In this system, as shown in the figure, a reaction gas blowout hole /2 is provided in the center of one reaction chamber 10, and exhaust gas is discharged downward from the exhaust gas discharge hole /4', for example, as shown in the figure. Note that the exhaust gas may be sucked upward.

Substrate to be coated/! is supported on a holder 16 which is movable in a direction perpendicular to the plane of the paper. The holders 16 may be arranged in multiple rows and overlappingly, facing each other in the flow direction of the reactant gas, if desired.

The device of the present invention is based on the 4tζ structure as detailed above, and has an excellent operational effect that can uniformly cover and expand the diving area, improving the workability of the 0% OVD method.
, it can be demonstrated.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view showing an example of a conventional OVD apparatus, FIG. 2 is a schematic cross-sectional view of the apparatus of the present invention, shown in FIG. and a schematic diagram showing only the holder; Figure 1 is a schematic diagram showing the substrate to be deposited inclined with respect to the flow of the reactant gas; Figure 3 is a schematic diagram showing the vertical in-line system of the apparatus of the present invention; i and io are reaction chambers, 2. /yo is the substrate to be deposited, J, /l is the holder, ≠,
11 is the reaction gas ejection mechanism, j, /Hiro is the gas exhaust hole, /3
is an open-hole partition wall, /7 is a gap, G is an arrow indicating the gas flow direction,
几 and G indicate reactive gases, respectively. Figure 2, Figure 3 5 b Figure 4/-- \- /-

Claims (1)

[Scope of Claims] (1) A substrate to be coated is held in a roots form with respect to the flow of the reaction gas in a reaction chamber configured to charge a reaction gas from one side and exhaust gas from the other side. Lutsk complete chemical vapor deposition equipment featuring: (2) If the surface of the substrate to be coated is held perpendicularly or at a constant angle to the flow of the reactant gas. L0(3) The Lutsk complete chemical vapor deposition apparatus according to claim 1, wherein the substrates to be coated are arranged in multiple rows in the flow direction of the reaction gas. (4) A Lutsk complete chemical vapor deposition apparatus as claimed in claim 1, characterized in that the substrate to be coated is moved across the reaction gas flow direction within the reaction chamber.