CN112466794B - Thin film deposition device and wafer boat assembly - Google Patents

Thin film deposition device and wafer boat assembly Download PDF

Info

Publication number
CN112466794B
CN112466794B CN202011325744.2A CN202011325744A CN112466794B CN 112466794 B CN112466794 B CN 112466794B CN 202011325744 A CN202011325744 A CN 202011325744A CN 112466794 B CN112466794 B CN 112466794B
Authority
CN
China
Prior art keywords
boat assembly
wafer
thin film
wafers
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011325744.2A
Other languages
Chinese (zh)
Other versions
CN112466794A (en
Inventor
程诗垚
蒲浩
刘松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangtze Memory Technologies Co Ltd
Original Assignee
Yangtze Memory Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangtze Memory Technologies Co Ltd filed Critical Yangtze Memory Technologies Co Ltd
Priority to CN202011325744.2A priority Critical patent/CN112466794B/en
Publication of CN112466794A publication Critical patent/CN112466794A/en
Application granted granted Critical
Publication of CN112466794B publication Critical patent/CN112466794B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The application discloses film deposition apparatus and wafer boat assembly. The wafer boat assembly includes: a plurality of stacked diaphragms; and a side wall connecting the plurality of diaphragms together, wherein the side wall is connected with a part of the peripheral area of each diaphragm, so that the adjacent diaphragms and the side wall jointly form a semi-enclosed space, the semi-enclosed space between the adjacent diaphragms is used for accommodating at least one wafer, and a plurality of gas inlet ends are formed on the side wall and respectively supply gas to the semi-enclosed space. The wafer boat assembly adopts an isolation structure near the gas inlet end to eliminate the influence of the wafer loading effect so as to improve the film thickness consistency of wafers on different layers.

Description

Thin film deposition device and wafer boat assembly
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a film deposition device and a wafer boat assembly.
Background
The increase in memory density of memory devices is closely related to the progress of semiconductor manufacturing processes. As the feature size of semiconductor manufacturing processes becomes smaller, the storage density of memory devices becomes higher. In order to further increase the memory density, a memory device of a three-dimensional structure (i.e., a 3D memory device) has been developed. The 3D memory device includes a plurality of memory cells stacked in a vertical direction, can increase integration in multiples on a unit area of a wafer, and can reduce cost. With the market demand for storage capacity of a single memory chip increasing, as many as 16 layers, or even more, of die are stacked in a stacked package structure.
In a manufacturing process of a 3D memory device, a thin film deposition apparatus is used to form a multi-layered thin film on a wafer. The thin film deposition apparatus includes a wafer boat (wafer boat) in a reaction chamber, on which a plurality of wafers are stacked in a vertical direction, and a reaction gas is introduced into the reaction chamber, so that a plurality of thin films can be simultaneously deposited on the plurality of wafers. The multilayer thin film is, for example, a functional stack of a 3D memory device, such as an ONO stack structure including oxide, nitride and oxide. Since the functional stack of the 3D memory device is used to store data in the form of electric charges, the quality of the multi-layered thin films in the functional stack plays a crucial role in the electrical performance.
However, in the thin film deposition apparatus, even if the flow rates of the reaction gases at the plurality of levels are substantially the same, the reaction gases compete with each other between the plurality of wafers at different levels, and thus the reaction rates are different. There is a difference in film thickness on wafers of different levels in the vertical direction of the boat, resulting in fluctuation in electrical performance of the 3D memory device and reduction in product yield.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a thin film deposition apparatus and a boat assembly, in which an isolation structure near the gas inlet end is employed to eliminate the influence of the wafer loading effect.
According to an aspect of the present invention, there is provided a boat assembly comprising: a plurality of stacked diaphragms; and a side wall connecting the plurality of diaphragms together, wherein the side wall is connected with a part of the peripheral area of each diaphragm, so that the adjacent diaphragms and the side wall jointly form a semi-enclosed space, the semi-enclosed space between the adjacent diaphragms is used for accommodating at least one wafer, and a plurality of gas inlet ends are formed on the side wall and respectively supply gas to the semi-enclosed space.
Preferably, the surface of the diaphragm is used to contact the back surface of the wafer to achieve a supporting fixation.
Preferably, the method further comprises the following steps: the supporting device comprises a top plate, a bottom plate and a plurality of supporting rods connected between the top plate and the bottom plate, wherein the supporting rods are distributed along the circumferential direction of the top plate, a plurality of grooves are formed in the side walls of the supporting rods, and the supporting rods are used for supporting and fixing wafers of a plurality of layers.
Preferably, the surface of the diaphragm is parallel to the surface of the top plate and the surface of the bottom plate.
Preferably, the shape of the diaphragm is any one selected from the group consisting of a circular shape, a square shape and a circular shape.
Preferably, the diaphragm and the side wall are each made of a ceramic material.
Preferably, an opening angle of the opening portion of the semi-enclosed space along the circumferential direction of the diaphragm is greater than 180 °.
According to another aspect of the present invention, there is provided a thin film deposition apparatus including: a housing and a base connected to form a reaction chamber; the wafer boat assembly is positioned in the reaction chamber; and an intake pipe and a plurality of manifolds communicating with each other to form an intake line, and the plurality of manifolds are respectively connected to a plurality of openings on the side wall to form the intake end.
Preferably, the method further comprises the following steps: a vertical partition plate communicating with an inner space of the reaction chamber through an opening, forming an exhaust passage with an inner wall of the housing to discharge gas.
Preferably, the thin film deposition apparatus forms a thin film on a plurality of wafers stacked in a vertical direction using an atomic layer deposition process.
In the boat assembly according to the embodiment of the invention, the adjacent diaphragm plates and the side walls form a semi-enclosed space together to separate at least some wafers of adjacent layers from each other, and the isolation state at the position near the gas inlet end is optimal, so that the influence of the wafer loading effect can be effectively reduced or eliminated, and the film thicknesses of the wafers of different layers are approximately the same.
According to the boat assembly of the preferred embodiment, the surface of the diaphragm plate is in contact with the back surface of the wafer to achieve support fixing. The diaphragms serve to support and hold the wafers of each layer and to space the wafers of the adjacent layers. The structure can not only save additional supporting rods to simplify the structure, but also can ensure that the wafers on each layer are independently supplied with gas, thereby further effectively reducing or eliminating the influence of the loading effect of the wafers and ensuring that the film thicknesses of the wafers on different layers are approximately the same.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
fig. 1 shows a schematic structural view of a thin film deposition apparatus.
Fig. 2 is a perspective view illustrating a boat assembly in a thin film deposition apparatus according to the related art.
Fig. 3 is a graph showing a relationship between a wafer position and a film thickness in a thin film deposition apparatus according to the related art.
Fig. 4 is a perspective view illustrating a structure of a boat assembly in a thin film deposition apparatus according to a first embodiment of the present invention.
Fig. 5 is a partial block diagram illustrating a single-layer structure of the boat assembly shown in fig. 4.
FIG. 6 is a graph showing a simulation of the distribution of reactant gases for the boat assembly shown in FIG. 4.
Fig. 7 is a perspective view illustrating a structure of a boat assembly in a thin film deposition apparatus according to a second embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. In addition, certain well known components may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.
It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region in describing the structure of the device, it can be directly on the other layer or region or intervening layers or regions may also be present. And, if the device is turned over, that layer, region, or regions would be "under" or "beneath" another layer, region, or regions.
If for the purpose of describing the situation directly above another layer, another area, the expression "directly above … …" or "above and adjacent to … …" will be used herein.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
Fig. 1 shows a schematic structural view of a thin film deposition apparatus.
As shown, the thin film deposition apparatus 100 includes a housing 102 and a susceptor 103. The housing 102 and the base 103 are connected to each other to form a reaction chamber. The gas inlet pipe 104 extends in a vertical direction and includes a plurality of nozzles 105 distributed in the vertical direction so that reaction gas can be supplied. The vertical partition 106 communicates with the inner space of the reaction chamber via the opening, and forms an exhaust passage with the inner wall of the housing 102, so that the reaction gas can be exhausted.
A boat assembly 110 is disposed in an inner space of the reaction chamber. The boat assembly 110 includes, for example, a top plate 111 and a bottom plate 112, and a support rod 113 connected therebetween. A plurality of wafers 101 are stacked on the boat assembly 110 in a vertical direction. In the thin film deposition process, the plurality of nozzles 105 of the gas inlet pipe 104 supply the reaction gas to the wafers 101 of the corresponding layers, respectively.
Preferably, the boat assembly 110 is connected to a motor so as to be rotatable to improve uniformity of the reaction gas contacting the wafer surface.
Fig. 2 is a perspective view illustrating a boat assembly in a thin film deposition apparatus according to the related art. The boat assembly is used, for example, in the thin film deposition apparatus shown in fig. 1 for stacking wafers.
The boat assembly 110 includes a top plate 111 and a bottom plate 112, and a plurality of support rods 113 connected therebetween. The top plate 111, the bottom plate 112, and the support rods 113 of the boat assembly 110 may be made of a material that is resistant to thermal deformation during high temperature and has high corrosion resistance, for example, a ceramic material, respectively. The top plate 111 and the bottom plate 112 are, for example, annular. The plurality of support rods 113 of the boat assembly 110 may be distributed along the circumferential direction of the top plate 111, and may have an opening of more than 180 °, for example. A plurality of grooves 121 are formed on the sidewalls of the support bars 113. The wafer 101 is put through the opening portion, and the edge contacts the inner wall of the groove 121 of the plurality of support bars 113 to realize support fixing. A plurality of wafers 101 are stacked in a vertical direction on the boat assembly 110. The gas inlet pipe 104 extends in a vertical direction and includes a plurality of nozzles 105 distributed in the vertical direction so that reaction gas can be supplied to the wafers of the respective layers to form thin films on the surfaces of the plurality of wafers 101.
In the manufacturing process of the 3D memory device, a plurality of thin films are deposited on the wafer 101, for example, using the atomic layer deposition process described above, to form a functional stack of the 3D memory device. The functional stack is for example an ONO stack of oxide, nitride and oxide.
The present inventors have found that, in the boat assembly of the related art described above, the gas inlet pipe 104 extends in the vertical direction and the gas is supplied by the plurality of nozzles 105 distributed in the vertical direction, and even if the flow rates of the gas supplied to the plurality of wafers 101 on different levels are substantially the same, the reaction gas competes with each other between the plurality of wafers 101 on different levels, and thus the reaction rates are different. There is a difference in film thickness on wafers on different levels in the vertical direction of the wafer boat.
Referring to fig. 3, the wafer position is, for example, a stacking layer surface of the wafer in the boat assembly, and the film thickness is, for example, a film thickness formed on the wafer. The stacking levels increase in order, for example, from bottom plate 112 to top plate 111. It can be seen that there is a significant difference in the film thickness of the wafers at the different levels, with the film thickness of the wafers at the middle position being much less than the film thickness of the wafers at the top and bottom positions. Since there is a difference in film thickness on wafers of different levels, the electrical performance of the 3D memory device fluctuates and the product yield is reduced.
In order to reduce the difference in the thickness of the thin films on the wafers in the reaction chamber, embodiments of the present invention provide a thin film deposition apparatus and a wafer boat assembly. Fig. 4 and 5 are a perspective view and a partial view illustrating a boat assembly in a thin film deposition apparatus according to a first embodiment of the present invention, respectively. The boat assembly is used, for example, in the thin film deposition apparatus shown in fig. 1 for stacking wafers.
The boat assembly 210 includes a plurality of diaphragms 211 stacked, and sidewalls 212 connecting the plurality of diaphragms 211 together. The diaphragm 211 and the sidewall 212 may be made of materials resistant to thermal deformation during high temperature and having high corrosion resistance, for example, ceramic materials, respectively. The diaphragm 211 has any shape of, for example, a circle, a rectangle, or a ring. The side wall 212 connects a part of the peripheral region 211b of the bulkhead 211, so that the bulkhead 211 of the adjacent layer and the side wall 212 together form a half-enclosed space having an opening portion 211a having an opening angle α of more than 180 °. The wafer 101 is placed through the opening 211a, and the back surface of the wafer 101 contacts the surface of the diaphragm 211 to be supported and fixed. Each of the diaphragms 211 of the boat assembly 210 may carry a corresponding one of the wafers 101 thereon, thereby stacking a plurality of wafers 101 in a vertical direction. The intake pipe 203 extends in a vertical direction, and communicates with a plurality of manifolds 204 extending laterally to form an intake passage. The manifold 204 is connected to the sidewall 212, and supplies a reaction gas to the wafers of the corresponding level through openings on the sidewall 212 to form a thin film on the surfaces of the plurality of wafers 101.
In an atomic layer deposition process, different types of gases (source gases and reactant gases) are alternately introduced into a reactor in accordance with a plurality of precursor pulses, chemisorbed and reacted on a wafer to form a thin film. When the reactant gases reach the wafer surface, surface reactions take place and chemisorb on the wafer surface. The reaction chamber is purged with an inert gas between precursor pulses. For example, a silicon nitride film (Si3N4) is formed by sequentially supplying a source gas, a purge gas, a reactive gas, and a purge gas using a silicon precursor substance containing silicon as the source gas, plasma-activated nitrogen as the reactive gas, and nitrogen as the purge gas.
The boat assembly according to this embodiment, wherein the diaphragms 211 of adjacent stages form a half-enclosed space together with the sidewalls 212, not only for accommodating the wafers of the corresponding stages, but also for spacing the wafers of the adjacent stages from each other. The positions of the wafers 101 of adjacent levels near the gas inlet end are the areas most seriously affected by each other due to the wafer loading effect. In this embodiment, the opening on the sidewall 212 serves as the air inlet end of the air inlet pipe, and the air inlet ends of the adjacent layers are separated by the semi-enclosed space, so that the isolation state of the wafers 101 of the adjacent layers at the position near the air inlet ends is optimal, and the influence of the wafer loading effect can be effectively reduced. Thus, the difference of the thickness of the thin films on a plurality of wafers in the reaction chamber when the thin films are deposited can be reduced, and the film thickness consistency of the wafers on different layers can be improved.
Referring to FIG. 6, near the surface of wafer 101, the gas flow rate at the inlet end (e.g., 1.88m/s) is much higher than at the far end (e.g., approximately 0 m/s). The flow rate represents the displacement of the gas per unit time in m/s. In the boat assembly 210 according to the embodiment of the present invention, the half-enclosed space formed by the diaphragm 211 and the sidewall 212 of the boat assembly together obtains the best isolation state at the air inlet end, and the half-enclosed space can also improve the air flow distribution at the far end. In the case where the gas supply pipe 203 supplies gas to the wafers 101 on the respective levels via the manifold 204, the flow rates of the gas supplied to the wafers 101 on the plurality of levels are substantially the same. In this way, the difference in gas flow rate between the inlet end and the distal end can be reduced in each level, and film thickness uniformity at different positions on the wafers of the respective levels of the boat assembly relative to the inlet end is improved. The half-enclosed space formed by the diaphragms 211 and the sidewalls 212 can also suppress the influence of the wafers 101 on different levels, so that the reaction rates on the wafers on the different levels are substantially the same, and the film thicknesses on the wafers on the different levels in the vertical direction of the boat assembly are also substantially the same. In the embodiment of the present application, the parallelism may include an approximate parallelism, i.e., an included angle between different wafers is smaller than a set threshold.
In the manufacturing process of the 3D memory device, a plurality of thin films are deposited on the wafer 101, for example, using the atomic layer deposition process described above, to form a functional stack of the 3D memory device. The functional stack is for example an ONO stack of oxide, nitride and oxide. Because the thicknesses of the wafers on different surfaces in the wafer boat assembly are approximately the same no matter the positions of the wafers, the 3D memory device has good electrical property consistency and the product yield is improved.
In this embodiment, an atomic layer deposition process is taken as an example, that is, the boat assembly is located in a reaction chamber of an atomic layer deposition apparatus. However, the present invention is not limited thereto, and the boat assembly described above may also be applied to a chemical vapor deposition apparatus, for example.
Fig. 7 is a perspective view illustrating a structure of a boat assembly in a thin film deposition apparatus according to a second embodiment of the present invention. The boat assembly is used, for example, in the thin film deposition apparatus shown in fig. 1 for stacking wafers.
The boat assembly 310 includes a top plate 311 and a bottom plate 312, a plurality of support rods 313 connected therebetween, a plurality of diaphragms 314 stacked, and a side wall 315 connecting the plurality of diaphragms 314 together. The top plate 311, the bottom plate 312, the support rods 313, the diaphragms 314, and the sidewalls 315 of the boat assembly 310 may be made of a material that is resistant to thermal deformation during high temperature and has high corrosion resistance, for example, a ceramic material, respectively. The top plate 311 and the bottom plate 312 are, for example, annular. The plurality of support rods 313 of the boat assembly 310 may be distributed along the circumferential direction of the top plate 311, and may form an opening having an opening angle of more than 180 °, for example. A plurality of grooves 321 are formed on the sidewalls of the support bars 313. The wafer 101 is put through the opening portion, and the edge contacts the inner wall of the groove 321 of the plurality of support bars 313 to realize the support fixing.
Further, the surface of the diaphragm 314 is substantially parallel to the surfaces of the top plate 311 and the bottom plate 312, and the shape of the diaphragm 314 is, for example, any one of a circular shape, a rectangular shape, and a ring shape. The side wall 315 connects a portion of the peripheral area of the bulkhead 314 such that the adjacent layers of the bulkhead 314 and the side wall 315 together form a semi-enclosed space. Preferably, the side wall 315 is connected with a side wall of the support bar 313. The boat assembly 310 holds the wafers 101 by the grooves 321 of the support rods 313 so that a plurality of wafers 101 are stacked in a vertical direction. The semi-enclosed row of spaces between adjacent diaphragms 314 may accommodate a plurality of wafers 101. The intake pipe 303 extends in a vertical direction, and communicates with a plurality of manifolds 304 extending laterally to form an intake passage. The manifold 304 is connected to a sidewall 315, and supplies a reaction gas to the wafers at the plurality of levels through openings in the sidewall 315 to form a thin film on the surfaces of the plurality of wafers 101.
According to the boat assembly of this embodiment, the wafers 101 are supported and fixed by the grooves 321 of the support rods 313, and the diaphragms 311 and the sidewalls 312 of the adjacent layers form a semi-enclosed space for separating at least some of the wafers from each other. In this embodiment, the opening on the sidewall 312 serves as the air inlet of the air inlet pipe, so that the isolation of the wafers 101 of adjacent layers at the position near the air inlet is optimal, and the influence of the wafer loading effect can be effectively reduced.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.

Claims (10)

1. A wafer boat assembly, comprising:
a plurality of stacked diaphragms; and
a sidewall connecting the plurality of diaphragms together, the sidewall connecting a portion of the peripheral region of each diaphragm, the sidewall and adjacent diaphragm together forming a semi-enclosed space for receiving at least one wafer,
wherein the side wall has a plurality of openings formed therein, each of which serves as an air inlet for supplying air to the semi-enclosed space, and the side wall and the diaphragm together form an isolation structure in the vicinity of the air inlet.
2. The substrate boat assembly of claim 1, wherein the surface of the diaphragm is adapted to contact the backside of the wafer to support the wafer.
3. The substrate boat assembly of claim 1, further comprising:
a top plate, a bottom plate and a plurality of support rods connected between the top plate and the bottom plate,
the supporting rods are distributed along the circumferential direction of the top plate, a plurality of grooves are formed in the side walls of the supporting rods, and the supporting rods are used for supporting and fixing wafers of a plurality of layers.
4. The substrate boat assembly of claim 3, wherein the surface of the diaphragm is parallel to the surface of the top plate and the surface of the bottom plate.
5. The wafer boat assembly according to claim 2 or 3, wherein the diaphragm plate has a shape selected from any one of a circular shape, a square shape and a circular shape.
6. The substrate boat assembly of claim 1, wherein the diaphragms and the sidewalls are each made of a ceramic material.
7. The substrate boat assembly according to claim 1, wherein the opening of the semi-enclosed space has an opening angle of more than 180 ° along the circumferential direction of the diaphragm plate.
8. A thin film deposition apparatus, comprising:
a housing and a base connected to form a reaction chamber;
the substrate boat assembly of any one of claims 1 to 7, located in the reaction chamber; and
an intake pipe and a plurality of manifolds communicating with each other to form an intake line, and the plurality of manifolds are connected to a plurality of openings on the side wall, respectively.
9. The thin film deposition apparatus as claimed in claim 8, further comprising:
a vertical partition plate communicating with an inner space of the reaction chamber through an opening, forming an exhaust passage with an inner wall of the housing to discharge gas.
10. The thin film deposition apparatus as claimed in claim 8, wherein the thin film deposition apparatus forms a thin film on a plurality of wafers stacked in a vertical direction using an atomic layer deposition process.
CN202011325744.2A 2020-11-24 2020-11-24 Thin film deposition device and wafer boat assembly Active CN112466794B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011325744.2A CN112466794B (en) 2020-11-24 2020-11-24 Thin film deposition device and wafer boat assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011325744.2A CN112466794B (en) 2020-11-24 2020-11-24 Thin film deposition device and wafer boat assembly

Publications (2)

Publication Number Publication Date
CN112466794A CN112466794A (en) 2021-03-09
CN112466794B true CN112466794B (en) 2021-12-03

Family

ID=74798200

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011325744.2A Active CN112466794B (en) 2020-11-24 2020-11-24 Thin film deposition device and wafer boat assembly

Country Status (1)

Country Link
CN (1) CN112466794B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4443482A1 (en) * 2021-12-02 2024-10-09 ACM Research (Shanghai) Inc. High-temperature tube furnace
CN116516317B (en) * 2023-04-12 2023-12-15 江苏微导纳米科技股份有限公司 Carrier boat, treatment equipment and method for controlling pressure drop in carrier boat

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156523A (en) * 1988-12-08 1990-06-15 Nec Corp Upright wafer boat
US6042652A (en) * 1999-05-01 2000-03-28 P.K. Ltd Atomic layer deposition apparatus for depositing atomic layer on multiple substrates
WO2004015742A2 (en) * 2002-08-09 2004-02-19 Applied Materials, Inc. High rate deposition in a batch reactor
KR20040046042A (en) * 2002-11-26 2004-06-05 (주) 윈테크 structure of boat and process tube of the axial type heat-treatment for performing atomic layer deposition
CN2684373Y (en) * 2001-12-27 2005-03-09 东京毅力科创株式会社 Heat treatment vessel and longitudinal heat treatment equipment
CN1992192A (en) * 2005-12-28 2007-07-04 东京毅力科创株式会社 Vertical boat and vertical heat processing apparatus for semiconductor process
CN101288157A (en) * 2005-10-11 2008-10-15 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
CN100459028C (en) * 2002-04-05 2009-02-04 株式会社日立国际电气 Substrate processing apparatus and reaction vessel
TW201834064A (en) * 2017-02-15 2018-09-16 日商日立國際電氣股份有限公司 Substrate processing device, reaction tube, method for manufacturing the semiconductor device, and program
CN109509698A (en) * 2017-09-13 2019-03-22 东京毅力科创株式会社 The method and apparatus for forming silicon oxide film
CN211654785U (en) * 2020-03-28 2020-10-09 苏州赛森电子科技有限公司 Material storage device for silicon wafers in vacuum coating process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5626680A (en) * 1995-03-03 1997-05-06 Silicon Valley Group, Inc. Thermal processing apparatus and process
KR100207461B1 (en) * 1996-02-22 1999-07-15 윤종용 Wafer boat
JP4930438B2 (en) * 2008-04-03 2012-05-16 東京エレクトロン株式会社 Reaction tube and heat treatment equipment
JP6016542B2 (en) * 2012-09-13 2016-10-26 株式会社日立国際電気 Reaction tube, substrate processing apparatus, and semiconductor device manufacturing method
JP2019047027A (en) * 2017-09-05 2019-03-22 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method and program

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156523A (en) * 1988-12-08 1990-06-15 Nec Corp Upright wafer boat
US6042652A (en) * 1999-05-01 2000-03-28 P.K. Ltd Atomic layer deposition apparatus for depositing atomic layer on multiple substrates
CN2684373Y (en) * 2001-12-27 2005-03-09 东京毅力科创株式会社 Heat treatment vessel and longitudinal heat treatment equipment
CN100459028C (en) * 2002-04-05 2009-02-04 株式会社日立国际电气 Substrate processing apparatus and reaction vessel
WO2004015742A2 (en) * 2002-08-09 2004-02-19 Applied Materials, Inc. High rate deposition in a batch reactor
KR20040046042A (en) * 2002-11-26 2004-06-05 (주) 윈테크 structure of boat and process tube of the axial type heat-treatment for performing atomic layer deposition
CN101288157A (en) * 2005-10-11 2008-10-15 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
CN1992192A (en) * 2005-12-28 2007-07-04 东京毅力科创株式会社 Vertical boat and vertical heat processing apparatus for semiconductor process
TW201834064A (en) * 2017-02-15 2018-09-16 日商日立國際電氣股份有限公司 Substrate processing device, reaction tube, method for manufacturing the semiconductor device, and program
CN109509698A (en) * 2017-09-13 2019-03-22 东京毅力科创株式会社 The method and apparatus for forming silicon oxide film
CN211654785U (en) * 2020-03-28 2020-10-09 苏州赛森电子科技有限公司 Material storage device for silicon wafers in vacuum coating process

Also Published As

Publication number Publication date
CN112466794A (en) 2021-03-09

Similar Documents

Publication Publication Date Title
CN112466794B (en) Thin film deposition device and wafer boat assembly
US6902624B2 (en) Massively parallel atomic layer deposition/chemical vapor deposition system
US8546270B2 (en) Atomic layer deposition apparatus
US8967082B2 (en) Plasma processing apparatus and gas supply device for plasma processing apparatus
US10131984B2 (en) Substrate processing apparatus
US8545940B2 (en) Atomic layer deposition apparatus
US20160168704A1 (en) Gas injectors
TWI506724B (en) Vertical heat treatment apparatus
US7576016B2 (en) Process for manufacturing semiconductor device
US20060112876A1 (en) Semiconductor processing apparatus
KR101118785B1 (en) Apparatus for manufacturing semiconductor
US20080241384A1 (en) Lateral flow deposition apparatus and method of depositing film by using the apparatus
US20060174827A1 (en) Apparatus for manufacturing semiconductor device
JP2009055001A (en) Method and equipment for batch process in vertical reactor
US20050045100A1 (en) Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces
JP2014179656A (en) Apparatus for manufacturing memory device having three-dimensional structure
US8940097B2 (en) Vertical heat treatment apparatus
CN110047726A (en) The clean method of the components of plasma processing apparatus
US20230290669A1 (en) Semiconductor manufacturing apparatus
TW201341578A (en) Gas supply head and substrate processing device
KR100352462B1 (en) Semiconductor manufacturing equipment
US20240003009A1 (en) Semiconductor processing apparatus for processing a plurality of substrates with cross flow
US20220081768A1 (en) Processing apparatus
CN116083879A (en) Chemical vapor deposition furnace, air inlet mechanism and air inlet method thereof
US20230268163A1 (en) Semiconductor manufacturing apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant