JPS594308A - Surface wave device - Google Patents
Surface wave deviceInfo
- Publication number
- JPS594308A JPS594308A JP57112852A JP11285282A JPS594308A JP S594308 A JPS594308 A JP S594308A JP 57112852 A JP57112852 A JP 57112852A JP 11285282 A JP11285282 A JP 11285282A JP S594308 A JPS594308 A JP S594308A
- Authority
- JP
- Japan
- Prior art keywords
- surface wave
- theta
- wave device
- berlinite
- coupling coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明はパーリナイト結晶（α−Ａ１．ＰＯ４）を用い
た表面波デバイスに関する０
（ｂ） 従来技術と問題点
従来、衣面波デバイス拐科としでは電気根株結合係数が
大きくかつ温度安定度の良好のものが要望されている。Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to surface wave devices using pearlinite crystals (α-A1.PO4). (b) Prior art and problems There is a demand for a fertilizer with a large electric root coupling coefficient and good temperature stability.
前者は表面波デバイスの伝送特性特に低損失化を可能と
し、後者は周波数温度特性を良好にする（ しかしなが
ら電気機械結合係数の大きいリチウムナイオベー） （
ＬｉＮｂＯｓ）結Ｊ＆、リチウムタンタレート（Ｌｉ
Ｔａ Ｏｓ）結晶は温度安定度が慇＜、リチウムナイオ
ベート（Ｌｉ Ｎｂ Ｏｓ ）においては約−８０ｐｐ
ｒｒ／℃、ｔたリチウムタンタレート（Ｌｘ Ｔａ Ｏ
ｓ）においてＰ！、−１０〜−２０ｐｐｍ／℃程度の周
波数温度特性であり、これらを温度安定度が厳しく要求
される通信機器用表面波デバイスとしてこのま１使用す
るのは１難であり、そのためには高性能な温度補償回路
が必要となる等の欠点がある。The former makes it possible to reduce the transmission characteristics, especially the loss, of surface wave devices, and the latter improves the frequency-temperature characteristics (however, lithium niobe, which has a large electromechanical coupling coefficient) (
LiNbOs) J&, lithium tantalate (Li
The temperature stability of TaOs) crystals is about -80pp for lithium niobate (LiNbOs).
rr/℃, t lithium tantalate (Lx TaO
In s), P! , frequency-temperature characteristics of about -10 to -20 ppm/℃, and it is difficult to use these as surface wave devices for communication equipment that require strict temperature stability. There are disadvantages such as the need for a temperature compensation circuit.
一方、ＳＴカットに代表される水晶を用いた表面波デバ
イスの温度安定度については、０〜５０℃の温度範囲に
おいて周波数率化率Δｆ／ｆは約４０ｐｐｍ程度で、上
記のリチウムナイオベート（ＬＩＮｂ Ｏｓ ）−リチ
ウムタンタレート（Ｌｉ Ｔａ Ｏｓ） の結晶に対
し１〜２桁以上も良好な温度安定が得られている。しか
しながら水晶は電気機械結合係数が小さい為、これを用
いて広帯域低損失フィルタを実現させることは極めて困
難であると云う欠点を有する。On the other hand, regarding the temperature stability of surface wave devices using crystals such as ST cut, the frequency conversion rate Δf/f is about 40 ppm in the temperature range of 0 to 50°C, and the above-mentioned lithium niobate (LINb) Temperature stability that is one to two orders of magnitude better has been obtained for crystals of (Os)-lithium tantalate (LiTaOs). However, since quartz crystal has a small electromechanical coupling coefficient, it has the disadvantage that it is extremely difficult to realize a broadband low-loss filter using it.
以上のＡｔ、従来の表Ｔｉ１Ｊ波デバイスは、それぞれ
、−長一灯を有しているものであった。The above At and conventional Ti1J wave devices each had a -long lamp.
（ｃ）光、明の目酊ノ
本発明は上記の欠点′ｌＬ解決するために、ＬｉＮｂ０
ａ＋Ｌｉ Ｔａ ０３結晶等に比較して″ｔＩＡ度７＋
度付＋７性で、水晶に比較して゛冨気機械結合係すが大
きい表面波デバイスを提供することを目的とする。(c) Light and light blindness In order to solve the above-mentioned drawbacks, the present invention aims to solve the above drawbacks.
``tIA degree 7+ compared to a+Li Ta 03 crystal etc.
It is an object of the present invention to provide a surface wave device having a strength of +7 and having a large mechanical coupling strength compared to quartz crystal.
（ｄ） 発明の構成
本発明は上記の目的を達成させるために、ｌ１ＲＥ１標
準によシ（ＹＸｔ）＋７で表示されるバーリナイト（α
−ＡｔＰＯ４）（ｍ転Ｙ板のＺ′軸方向に金９よりなる
交さ指形入出カドランスジューサを摺成し、ＳＨ波形表
位」波を送受する該表面波デバイスに↓−いて、切断方
位θが１１２〜１１５度の範囲にあることを特徴とする
。(d) Structure of the Invention In order to achieve the above-mentioned object, the present invention is based on barlinite (α
-AtPO4) (Slide an intersecting finger-shaped input/output quadrangular juicer made of gold 9 in the Z'-axis direction of the m-rolled Y plate, and cut the SH waveform surface at the surface wave device that transmits and receives waves. It is characterized in that the orientation θ is in the range of 112 to 115 degrees.
（ｅ） 発ツＩ（７）実加例
以１′：図面に基づいて本発明を説明する。第１図は本
発明に係るバーリナイト（α−ＡｔＰＯ４）表面波デバ
イスｌの材料の結晶の切ＩＪｌ方イ１１．を示した図で
’６６ Ｑこの切断力位とＩＲＥ椋準で示すと（Ｙｘｔ
）θで表わされ、ＹＸは図１のＸＹｚ市又軸のＸ軸、Ｙ
軸を示し、ｔは該表面波デバイス１の長手方向（Ｘ軸方
向）寸法、θはＸ軸を軸に反時計方向にθ度回転したと
きの２軸と該表面波デバイス面の回転角を示す。図で点
線はＹカット板を示しておシ、実線はＹカット板をＸ軸
に関しθ度回転した角度で切断した回転Ｙカット板を示
す。この切断方位を一般にＩＲＥ標準により＜ＹＸｔ）
θで表示する０
上記の回転Ｙカット板ＳＫついて調査した結果、２′軸
方向に金電極よシなる交さ指形トランスジ一サを構成す
ることによりトランスジ工−ザの金電極膜厚に依存した
ＳＨ波形表面波を励振させることが出来ることが判明し
た。さらに検討を加えた結果、電極材料が従来のアルミ
ニウムではこの切断方位におけるＳＲ波形表面波を励振
させることが出来ないという点も明らかＫなりた。(e) Development I (7) Practical Example 1': The present invention will be explained based on the drawings. FIG. 1 shows the cutting direction of the crystal of the material of the verlinite (α-AtPO4) surface wave device according to the present invention. In the diagram showing '66
) θ, YX is the X axis of the XYz Ichimata axis in Figure 1, and Y
t is the longitudinal direction (X-axis direction) dimension of the surface wave device 1, and θ is the rotation angle between the two axes and the surface wave device surface when rotated by θ degrees counterclockwise around the X-axis. show. In the figure, the dotted line indicates a Y-cut plate, and the solid line indicates a rotated Y-cut plate obtained by cutting the Y-cut plate at an angle of θ degrees about the X-axis. This cutting direction is generally <YXt) according to the IRE standard.
Indicated by θ0 As a result of investigating the above-mentioned rotating Y-cut plate SK, it was found that by configuring an interdigitated transformer with gold electrodes in the 2' axis direction, the thickness of the gold electrode film of the transformer could be reduced. It has been found that it is possible to excite SH waveform surface waves. As a result of further investigation, it became clear that the conventional aluminum electrode material could not excite the SR waveform surface waves in this cutting direction.
第２図はバーリナイト（α−ＡｔＰｏ４）を基板として
用いた時のトランスジー−サ２（第１図）の規準化金電
極膜厚Ｓが通常使用される範囲の一例として、Ｓ−３Ｘ
ｌＯの場合における切断方位０と周波数の１火源度係数
Ｔ １（１＋を示したものである。Figure 2 shows S-3
This shows the cutting direction 0 and frequency 1 ignition intensity coefficient T 1 (1+) in the case of 1O.
５＝３Ｘ１０−３でＴｆＯ）−０となる切断方位θは１
１４度になる。The cutting direction θ that gives TfO)-0 at 5=3X10-3 is 1
It will be 14 degrees.
ｈａ
ここで、上記規準化膜厚ＳはＳ＝ 、、、ｉＴする膜厚
Ｓの関係を示す。また１火源度係数Ｔ Ｉ（１）は周゛
波数の変化率Δｆ／ｆについて温度変化を指数展開した
もの、即ち△ｆ／ｆ＝Ａ＜ ｔ−ｔｏ ）ｔｉｃ（ｔ−
ｔｏ）”・・・のＡを１火源度係数Ｔｆ（１）とする。ha Here, the normalized film thickness S represents the relationship between the film thickness S=S=,...iT. In addition, the 1 ignition intensity coefficient T I (1) is the exponential expansion of the temperature change with respect to the frequency change rate Δf/f, that is, Δf/f=A<t-to)tic(t-
Let A of ``to)'' be 1 ignition source degree coefficient Tf(1).
式らに金電極規準化膜厚＆の一般に使用される範囲Ｓ−
２Ｘ１０−”〜ｌＸｌ０−”において、調査した結果Ｔ
Ｉ（１）＝０となる切断方位θはθ＝１１２〜１１５度
であることが判明した。The commonly used range of gold electrode normalized film thickness & S-
2X10-"~lXl0-", the result of investigation is T
It was found that the cutting direction θ at which I(1)=0 was θ=112 to 115 degrees.
第３図は第２図に示した切断方位の範囲に対する電気機
械結合係数を示したものである○同図において、θ；１
１４度付近にて結合係数は約３．４×１０−ａであシ、
従来のＳＴカットに比較して２．５倍（ＳＴカットレイ
リー波の結合係数的１．４Ｘ１Ｇ−”）も大きいことが
判る。Figure 3 shows the electromechanical coupling coefficient for the range of cutting directions shown in Figure 2. In the figure, θ; 1
The coupling coefficient is approximately 3.4×10-a at around 14 degrees,
It can be seen that it is 2.5 times larger (1.4×1G-'' in terms of the coupling coefficient of ST-cut Rayleigh waves) than the conventional ST-cut.
（ｆ） 発明の効果
以上本発明によれば水晶と同様に１次周波数温度係数Ｔ
１ Ｌｌ＋＝０になる切断方位が存在し、さらに電気
機械結合係数が従来のＳＴカットの水晶に比較して約２
．５倍以上大きく、高安定、広帯域かつ低損失な表面波
デバイスを提供することが出来る。(f) Effects of the Invention According to the present invention, the primary frequency temperature coefficient T
1 There is a cutting direction where Ll+=0, and the electromechanical coupling coefficient is about 2 compared to the conventional ST cut crystal.
．． It is possible to provide a surface wave device that is five times larger, highly stable, broadband, and low loss.
【図面の簡単な説明】
第１図は回転Ｙカット板を示す説明図、第２図は本発明
に係るパーリナイト（α−ＡｔＰＯ４）を用いたトラン
スジューサの規準化金電極膜厚５＝３ＸＩＯ−３のとき
の切断方位θと１火源度係数Ｔｆ（１１の関係を示した
図、第３図は第２図に示す切断方位の範囲内での電気機
械結合係数を示す。
図中、１は表面波デバイス、２はトランスジューサを示
す。
惇
第２図
−−ｔＩ１９′[Brief Description of the Drawings] Fig. 1 is an explanatory diagram showing a rotating Y-cut plate, Fig. 2 is a normalized gold electrode film thickness of a transducer using pearlinite (α-AtPO4) according to the present invention 5 = 3XIO-3 A diagram showing the relationship between the cutting direction θ and the 1 ignition source coefficient Tf (11), FIG. 3 shows the electromechanical coupling coefficient within the cutting direction shown in FIG. Surface wave device, 2 indicates a transducer. Figure 2--tI19'
Claims (1)
ト（αニーＡ７に０４）回転Ｙ板のＺ′軸方而面金属極
よシなる父き指形入出力トシンスジー−ザを構成し、Ｓ
Ｈ波形費面波を送受する該表面波デバイスにおいて、切
断方位θが１１２〜ｘｘ５ａｔの範囲にあることを特徴
とする表面波デバイス。According to the IRE standard, a finger-shaped input/output synthesizer is constructed from the Z'-axis plane metal pole of the rotating Y plate, which is represented by yxz θ. S
1. A surface wave device that transmits and receives an H-waveform surface wave, wherein the cutting direction θ is in a range of 112 to xx5at.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112852A JPS594308A (en) | 1982-06-30 | 1982-06-30 | Surface wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112852A JPS594308A (en) | 1982-06-30 | 1982-06-30 | Surface wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS594308A true JPS594308A (en) | 1984-01-11 |
Family
ID=14597135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57112852A Pending JPS594308A (en) | 1982-06-30 | 1982-06-30 | Surface wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594308A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112017006731T5 (en) | 2017-02-02 | 2019-10-10 | Meidensha Corporation | METHOD FOR PRODUCING AN ELECTRODE MATERIAL AND ELECTRODE MATERIAL |
-
1982
- 1982-06-30 JP JP57112852A patent/JPS594308A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112017006731T5 (en) | 2017-02-02 | 2019-10-10 | Meidensha Corporation | METHOD FOR PRODUCING AN ELECTRODE MATERIAL AND ELECTRODE MATERIAL |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3622202B2 (en) | Method for adjusting temperature characteristics of surface acoustic wave device | |
| JP4158650B2 (en) | Surface acoustic wave device and manufacturing method thereof | |
| JP2007028538A (en) | Surface acoustic wave device | |
| US6031315A (en) | Optimal cut for saw devices on quartz | |
| US3601639A (en) | Low-temperature coefficient lithium tantalate resonator | |
| JPH0715274A (en) | High frequency saw filter and surface acoustic wave function element using high-stability high coupling saw substrate | |
| JPS61285814A (en) | Longitudinal double mode saw filter | |
| JPH06232684A (en) | Surface acoustic wave device | |
| US6097131A (en) | Optimal cut for SAW devices on langatate | |
| JP2002152007A (en) | Lamb wave type elastic wave resonator | |
| JPS594308A (en) | Surface wave device | |
| JP2005086233A (en) | Surface acoustic wave device and method of adjusting frequency temperature characteristic thereof | |
| JPS6318892B2 (en) | ||
| US4511817A (en) | Temperature compensated orientation of berlinite for surface acoustic wave devices | |
| JPH04253412A (en) | Surface acoustic wave device | |
| JP2855208B2 (en) | LiTaO 3 Lower piezoelectric resonator | |
| JPS63173412A (en) | Leaky saw resonator | |
| JP2745012B2 (en) | Leaky SAW resonator | |
| JPS594309A (en) | Surface acoustic wave device | |
| JPS60259011A (en) | Surface acoustic wave device | |
| JPS62220012A (en) | Piezoelectric vibration element | |
| JP2003124778A (en) | One-way surface acoustic wave converter | |
| JPS61251307A (en) | Piezoelectric vibrator | |
| JPS58114518A (en) | Surface wave element | |
| JPS59143411A (en) | Elastic surface wave device |