JPS5937417A - Temperature compensating circuit of offset voltage of semiconductor pressure sensor - Google Patents
Temperature compensating circuit of offset voltage of semiconductor pressure sensorInfo
- Publication number
- JPS5937417A JPS5937417A JP14871582A JP14871582A JPS5937417A JP S5937417 A JPS5937417 A JP S5937417A JP 14871582 A JP14871582 A JP 14871582A JP 14871582 A JP14871582 A JP 14871582A JP S5937417 A JPS5937417 A JP S5937417A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- temperature
- semiconductor pressure
- voltage
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
- G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
- G01D3/036—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves
Abstract
Description
【発明の詳細な説明】
この発明は、半導体圧力センサのオフセット電圧温度補
償回路において、温Ｉｆ′ｘ＋ｔｉ Ｉｔの高精度化を
図ったものに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an offset voltage temperature compensation circuit for a semiconductor pressure sensor in which temperature If'x+tiIt is highly accurate.
従来、この種の装置として第１図に示すものがあった。Conventionally, there has been a device of this type as shown in FIG.
図において、（１）は半導体圧力センサ、（２）はこの
半導体圧力センサ（１）の出方端子ＯＵＴに接続された
抵抗、（３）は半導体圧力センサ（１）の入方端子ＩＮ
間に接続された電源である。In the figure, (1) is a semiconductor pressure sensor, (2) is a resistor connected to the output terminal OUT of the semiconductor pressure sensor (1), and (3) is the input terminal IN of the semiconductor pressure sensor (1).
This is the power supply connected between the two.
次に動作について説明する。半導体圧力センサ（１）に
加えられた圧力は、該半導体圧力センサ（１）で電気信
号に変換される。半導体圧力センサ（１）のダイヤフラ
ムに圧力が加えられていない時の半導体圧力センサ（１
）の出力をオフセット電圧と呼ぶが、このオフセット重
圧が温度により変化するため、オフセット電圧の温度補
償が必要になる。オフセット電圧の温度補償は、半導体
圧力センサ（１）の出力端子ＯＵＴと一方の入力端子Ｉ
Ｎとの間に接続された抵抗（２）によって行われる。半
纏体圧力センサ（１）のゲージ抵抗値をλＧ 、抵抗（
２）の抵抗値を１２とし、
１（Ｑ＝λＧＯ（１＋αを十βｔ ）
とすると、オフセット電圧温度補償−ＪｉＶｏｆｆｃは
次ｎ
但し、ｎ ＝ Ｒ２／ ＲＧ Ｏ
■Ｂ：電源（３）の電圧
従来の半導体圧力センサのオフセット電圧温度補償回路
は以上のように構成されているので、オフセット電圧温
度補償量Ｖｏｆｆｃ の温度に対する直線性を良くする
ためには、半導体圧力センサ（１）のゲージ抵抗の温度
係数の温度に対する直線性を良くする必要があった。即
ち要するにオフセット電圧温度補償量Ｖｏ ｆ ｆ ｃ
の温度特性はゲージ抵抗の温度特性に依存するため、ゲ
ージ抵抗の温度特性に非直線性が存在すると、オフセッ
ト電圧温度補償量Ｖｏｆｆｃ にも非直線性が生じてし
まうという欠点があった。Next, the operation will be explained. Pressure applied to the semiconductor pressure sensor (1) is converted into an electrical signal by the semiconductor pressure sensor (1). Semiconductor pressure sensor (1) when no pressure is applied to the diaphragm of semiconductor pressure sensor (1)
) is called an offset voltage, but since this offset pressure changes with temperature, temperature compensation of the offset voltage is required. Temperature compensation of the offset voltage is performed between the output terminal OUT of the semiconductor pressure sensor (1) and one input terminal I.
This is done by a resistor (2) connected between N and N. The gauge resistance value of the semi-integrated pressure sensor (1) is λG, and the resistance (
If the resistance value of 2) is 12 and 1 (Q = λGO (1 + α is 10βt)), then the offset voltage temperature compensation - JiVoffc is as follows. However, n = R2/RG O ■B: Voltage of power supply (3) Conventional Since the offset voltage temperature compensation circuit of the semiconductor pressure sensor (1) is configured as described above, in order to improve the linearity of the offset voltage temperature compensation amount Voffc with respect to temperature, it is necessary to adjust the temperature of the gauge resistance of the semiconductor pressure sensor (1). It was necessary to improve the linearity of the coefficient with respect to temperature.In other words, the offset voltage temperature compensation amount Vo f f c
Since the temperature characteristics of Voffc depend on the temperature characteristics of the gauge resistance, there is a drawback that if nonlinearity exists in the temperature characteristics of the gauge resistance, nonlinearity also occurs in the offset voltage temperature compensation amount Voffc.
この発明は上記のような従来のものの欠点を除去するた
めになされたもので、オフセット電圧の温度補償を抵抗
に印加される電圧の変化で行うことにより、オフセット
電圧の温度補償量がゲージ抵抗の温度特性に依存しない
、直線性のよい半導体圧力センサのオフセット電圧温度
曲償回路を提供することを目的としている。This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and by performing temperature compensation of the offset voltage by changing the voltage applied to the resistor, the amount of temperature compensation of the offset voltage can be reduced to that of the gauge resistor. It is an object of the present invention to provide an offset voltage temperature bending circuit for a semiconductor pressure sensor that does not depend on temperature characteristics and has good linearity.
以下、この発明の一実施例を図について説明する。第２
図において、（１）は半導体圧力センサ、（２）は一端
が半導体圧力センサ（１）の出力端子ＯＵＴに接続され
た抵抗、（３）は半導体圧力センサ（１）の入力端子Ｉ
Ｎ間に接続された電源、（６）は温度により電圧が変化
する感温電源で、半導体圧力センサ（１１の一方の入力
端子と抵抗（２１の他端間に接続されている。Ｏｌは上
記感温電源（６）および抵抗（２）からなる感温電圧発
生回路である。An embodiment of the present invention will be described below with reference to the drawings. Second
In the figure, (1) is a semiconductor pressure sensor, (2) is a resistor whose one end is connected to the output terminal OUT of the semiconductor pressure sensor (1), and (3) is the input terminal I of the semiconductor pressure sensor (1).
The power supply (6) is a temperature-sensitive power supply whose voltage changes depending on the temperature, and is connected between one input terminal of the semiconductor pressure sensor (11) and the other end of the resistor (21). This is a temperature-sensitive voltage generation circuit consisting of a temperature-sensitive power supply (6) and a resistor (2).
次に作用について説明する。Next, the effect will be explained.
電源（３）の電圧をＶ９．抵抗（２）の抵抗値を化２．
感温膚源（６）の電圧をＶｒｅｆ （＝Ｖｒｅｆｏ・（
１＋７ｔ））。Set the voltage of power supply (3) to V9. The resistance value of resistor (2) is expressed as 2.
The voltage of the temperature-sensitive skin source (6) is Vref (=Vrefo・(
1+7t)).
圧力センサ（１）のゲージ抵抗値をＮＧ （−ＮＧＯ−
（１十α【十β１））とすると、圧力センサ（１）のオ
フセット電圧温度補償１ＩｔＶｏ ｆ ｆ ｃ は次
式で表わされる。NG (-NGO-) gauge resistance value of pressure sensor (1)
(10 α [10 β1)), the offset voltage temperature compensation 1ItVo f f c of the pressure sensor (1) is expressed by the following equation.
但し、ｎ ＝ Ｒ２／ ＲＧ Ｏ
Ｂ
ここでＶｒｅｆｏ＝−とすると、
ｎ
となり、αた１、２ｘｌＯ／℃、β−７ｘｉｎ ７℃
。However, n = R2/ RGO B Here, if Vrefo = -, then n becomes α, 1, 2xlO/℃, β-7xin 7℃
.
ｒ＝２Ｘ１０−３／℃の場合ＪｊツイテＶｏｆｆｃ
ヲ計算−ｆると、式（３）は次式のようになる。When r=2X10-3/℃ Jj Tweet Voffc
By calculating -f, equation (3) becomes as follows.
ｎ
ｎ
であるから、温度変化１００℃の場合、その非直線性（
Ｎｏｎ−Ｌｉｎｅａｒｌ ｉｔｙ；ＮＬ ）はそれぞれ
従来の場合、ＮＬ−１４，６係
本発明の場合、ＮＬ＝ ３ 係
となり、約１１５に改善される。Since n n , in the case of a temperature change of 100°C, its nonlinearity (
Non-Linearlity (NL) is respectively NL=14 and 6 in the conventional case, and NL=3 in the case of the present invention, which is improved to about 115.
なお、上記実施例では、感温電圧発生回路α０を、温度
に応じて電源電圧が変化する感温電源（６）と抵抗（２
）とで構成する例について説明したが、この感温電圧発
生回路（１［１は第３図に示すように、抵抗＋４１と感
温抵抗（５）とからなり電源（３）の電圧を分圧する分
圧回路０１）と、この分圧回路＋ＩＩ＋の出力を半導体
圧力センサ（１）の出力端Ｗ印加する抵抗（２）とで構
成してもよく、上記実施例と同様の効果を奏する。In the above embodiment, the temperature-sensitive voltage generating circuit α0 is composed of a temperature-sensitive power supply (6) whose power supply voltage changes depending on the temperature and a resistor (2).
), this temperature-sensitive voltage generating circuit (1 [1 is, as shown in Fig. The pressure dividing circuit 01) may be configured to apply pressure to the output terminal W of the semiconductor pressure sensor (1), and the resistor (2) may apply the output of the voltage dividing circuit +II+ to the output terminal W of the semiconductor pressure sensor (1), and the same effect as in the above embodiment can be obtained.
又、上記実施例では電源（３）の電圧が一定で、電源（
６）の電圧が温度によって変化する場合を示したが、電
源（６）の電圧が一定で、電源（３１の電圧が温度によ
って変化するものとした場合でも同様の効果を奏する。Further, in the above embodiment, the voltage of the power source (3) is constant, and the voltage of the power source (3) is constant.
Although the case where the voltage of the power source (6) changes depending on the temperature is shown, the same effect can be obtained even if the voltage of the power source (6) is constant and the voltage of the power source (31) changes depending on the temperature.
この場合、Ｖａ＝ＶＢＯ（１＋γ【） とすると、オフ
セット電圧温度補償量Ｖｏ［ｆｃ は次式のよう以上の
ように、この発明によれば、オフセット電圧の温度補償
を補償用抵抗に出加される電圧の温度変化で行うように
したので、圧力センサのゲージ抵抗の温度係数に依存し
ない、精度の高い半導体圧力センサのオフセット電圧温
度補償回路が容易に得られる効果がある。In this case, if Va=VBO(1+γ[), then the offset voltage temperature compensation amount Vo[fc is as follows.According to the present invention, temperature compensation of the offset voltage is applied to the compensation resistor. Since this is performed based on the temperature change of the voltage, it is possible to easily obtain a highly accurate offset voltage temperature compensation circuit for a semiconductor pressure sensor that does not depend on the temperature coefficient of the gauge resistance of the pressure sensor.
第１図は従来の半導体圧力センサのオフセット電圧温度
補償回路を示す回路図、第２図はこの発明の一実施例に
よる半導体圧力センサのオフセット電圧温度補償回路を
示す回路図、第３図はこの発明の他の実施例を示す回路
図である。
（１）・・・半導体圧力センサ、ＩＮ・・・入力端子、
ＯＵＴ・・・出力端子、（２）・・・抵抗、（３）・・
・電源、（４）・・・抵抗、（５）・・・感温抵抗、（
６）・・・感温電源、０ト・・感温電圧発生回路、（Ｉ
ｌ＋・・・分圧回路。
なお肉中同−符号は同−又は相当部分を示す。
代 理 人 葛 野 信 −第
１図
第２図
第３ 図FIG. 1 is a circuit diagram showing a conventional offset voltage temperature compensation circuit for a semiconductor pressure sensor, FIG. 2 is a circuit diagram showing an offset voltage temperature compensation circuit for a semiconductor pressure sensor according to an embodiment of the present invention, and FIG. FIG. 3 is a circuit diagram showing another embodiment of the invention. (1)...Semiconductor pressure sensor, IN...Input terminal,
OUT...Output terminal, (2)...Resistor, (3)...
・Power supply, (4)...Resistance, (5)...Temperature-sensitive resistor, (
6)...Temperature-sensitive power supply, 0t...Temperature-sensitive voltage generation circuit, (I
l+...Voltage dividing circuit. Note that the same symbols in the meat indicate the same or equivalent parts. Agent Shin Kuzuno - Figure 1 Figure 2 Figure 3
Claims (3)
該半導体圧力センサの面入力端子間に心源電圧を印加す
る電源と、上記半導体圧力センサの出力端子に温度に応
じて変化する電圧を与える感温電圧発生回路とを備えた
ことを特徴とする半導体圧力センサのオフセット磁圧温
度補償回路。(1) A semiconductor pressure sensor that converts pressure into an electrical signal,
The semiconductor pressure sensor is characterized by comprising a power source that applies a core voltage between the surface input terminals of the semiconductor pressure sensor, and a temperature-sensitive voltage generation circuit that applies a voltage that changes depending on the temperature to the output terminal of the semiconductor pressure sensor. Offset magnetic pressure temperature compensation circuit for semiconductor pressure sensor.
圧力センサの一方の入力端子に他端が該半導体圧力セン
サの出力端子に接続された、その４源５１圧が温度によ
り変化する感温電源と抵抗との直列回路であることを特
徴とする特許請求の範囲第１項記載の半導体圧力センサ
のオフセット電圧温度補償回路。(2) The sensitive crystal's pressure generating circuit has one end connected to one input terminal of the semiconductor pressure sensor and the other end connected to the output terminal of the semiconductor pressure sensor, and the pressure of the four sources 51 changes depending on the temperature. 2. The offset voltage temperature compensation circuit for a semiconductor pressure sensor according to claim 1, which is a series circuit of a temperature-sensitive power supply and a resistor.
互に直列に接続された抵抗と感温抵抗からなる分圧回路
と、この分圧回路による分圧電圧を上記半導体圧力セン
サの出力端子に加える抵抗とからなるものであることを
特徴とする特許請求の範囲第１項記載の半導体圧力セン
サのオフセット電圧温度補雀回路。(3) The temperature-sensitive voltage generation circuit includes a voltage dividing circuit consisting of a resistor and a temperature-sensitive resistor connected in series between both ends of the power supply, and a voltage divided by the voltage dividing circuit to the semiconductor pressure sensor. 2. The offset voltage temperature compensator circuit for a semiconductor pressure sensor according to claim 1, further comprising a resistor applied to an output terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14871582A JPS5937417A (en) | 1982-08-25 | 1982-08-25 | Temperature compensating circuit of offset voltage of semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14871582A JPS5937417A (en) | 1982-08-25 | 1982-08-25 | Temperature compensating circuit of offset voltage of semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5937417A true JPS5937417A (en) | 1984-02-29 |
| JPH057653B2 JPH057653B2 (en) | 1993-01-29 |
Family
ID=15458970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14871582A Granted JPS5937417A (en) | 1982-08-25 | 1982-08-25 | Temperature compensating circuit of offset voltage of semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5937417A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4911016A (en) * | 1986-03-26 | 1990-03-27 | Hitachi, Ltd. | Semiconductor strain gauge bridge circuit |
-
1982
- 1982-08-25 JP JP14871582A patent/JPS5937417A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4911016A (en) * | 1986-03-26 | 1990-03-27 | Hitachi, Ltd. | Semiconductor strain gauge bridge circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH057653B2 (en) | 1993-01-29 |
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