JPH057653B2 - - Google Patents
Info
- Publication number
- JPH057653B2 JPH057653B2 JP14871582A JP14871582A JPH057653B2 JP H057653 B2 JPH057653 B2 JP H057653B2 JP 14871582 A JP14871582 A JP 14871582A JP 14871582 A JP14871582 A JP 14871582A JP H057653 B2 JPH057653 B2 JP H057653B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- temperature
- voltage
- semiconductor pressure
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000010586 diagram Methods 0.000 description 4
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
- G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
- G01D3/036—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves
Description
【発明の詳細な説明】
この発明は、半導体圧力センサのオフセツト電
圧温度補償回路において、温度補償の高精度化を
図つたものに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an offset voltage temperature compensation circuit for a semiconductor pressure sensor that achieves high accuracy in temperature compensation.
従来、この種の装置として第１図に示すものが
あつた。図において、１は半導体圧力センサで、
ブリツジに組まれた半導体歪計素子１２により構
成されている。２はこの半導体圧力センサ１の出
力端子OUTに接続された抵抗、３は半導体圧力
センサ１の入力端子IN間に接続された電源であ
る。 Conventionally, there has been a device of this type as shown in FIG. In the figure, 1 is a semiconductor pressure sensor,
It is composed of semiconductor strain gauge elements 12 assembled into a bridge. 2 is a resistor connected to the output terminal OUT of the semiconductor pressure sensor 1, and 3 is a power supply connected between the input terminal IN of the semiconductor pressure sensor 1.
次に動作について説明する。半導体圧力センサ
に加えられた圧力は、該半導体圧力センサ１で電
気信号に変換される。半導体圧力センサ１のダイ
ヤフラムに圧力が加えられていない時の半導体圧
力センサ１の出力をオフセツト電圧と呼ぶが、こ
のオフセツト電圧が温度により変化するため、オ
フセツト電圧の温度補償が必要になる。オフセツ
ト電圧の温度補償は、半導体圧力センサ１の出力
端子OUTと一方の入力端子INとの間に接続され
た抵抗２によつて行われる。半導体圧力センサ１
に組込まれた半導体歪計素子１２の抵抗（以下、
ゲージ抵抗と称す）の値をRG、抵抗２の抵抗値
をR2とし、
RG＝RG0（１＋αt＋βt2）
とすると、オフセツト電圧温度補償量Voffcは次
式で表わされる。 Next, the operation will be explained. Pressure applied to the semiconductor pressure sensor 1 is converted into an electrical signal by the semiconductor pressure sensor 1. The output of the semiconductor pressure sensor 1 when no pressure is applied to the diaphragm of the semiconductor pressure sensor 1 is called an offset voltage, but since this offset voltage changes depending on the temperature, temperature compensation of the offset voltage is required. Temperature compensation of the offset voltage is performed by a resistor 2 connected between the output terminal OUT of the semiconductor pressure sensor 1 and one input terminal IN. Semiconductor pressure sensor 1
The resistance of the semiconductor strain meter element 12 incorporated in the (hereinafter referred to as
When the value of the gauge resistance (referred to as gauge resistance) is R G and the resistance value of the resistor 2 is R 2 , and R G =R G0 (1+αt+βt 2 ), the offset voltage temperature compensation amount Voffc is expressed by the following equation.
Voffc＝VB／4n（αt＋βt2） (1)
但し、ｎ＝R2／RG0
VB；電源(3)の電圧
従来の半導体圧力センサのオフセツト電圧温度
補償回路は以上のように構成されているので、オ
フセツト電圧温度補償量Voffcの温度に対する直
線性を良くするためには、半導体圧力センサ１の
ゲージ抵抗の温度係数の温度に対する直線性を良
くする必要があつた。即ち要するにオフセツト電
圧温度補償量Voffcの温度特性はゲージ抵抗の温
度特性に依存するため、ゲージ抵抗の温度特性に
非直線性が存在すると、オフセツト電圧温度補償
量Voffcにも非直線性が生じてしまうという欠点
があつた。 Voffc=V B /4n (αt+βt 2 ) (1) However, n=R 2 /R G0 V B ; Voltage of power supply (3) The offset voltage temperature compensation circuit of the conventional semiconductor pressure sensor is configured as above. Therefore, in order to improve the linearity of the offset voltage temperature compensation amount Voffc with respect to temperature, it was necessary to improve the linearity of the temperature coefficient of the gauge resistance of the semiconductor pressure sensor 1 with respect to temperature. In other words, the temperature characteristics of the offset voltage temperature compensation amount Voffc depend on the temperature characteristics of the gauge resistance, so if there is nonlinearity in the temperature characteristics of the gauge resistance, nonlinearity will also occur in the offset voltage temperature compensation amount Voffc. There was a drawback.
この発明は上記のような従来のものの欠点を除
去するためになされたもので、オフセツト電圧の
温度補償を抵抗に印加される電圧の変化で行うこ
とにより、オフセツト電圧の温度補償量がゲージ
抵抗の温度特性に依存しない、直線性のよい半導
体圧力センサのオフセツト電圧温度補償回路を提
供することを目的としている。 This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and by performing temperature compensation of the offset voltage by changing the voltage applied to the resistor, the amount of temperature compensation of the offset voltage can be made equal to that of the gauge resistor. It is an object of the present invention to provide an offset voltage temperature compensation circuit for a semiconductor pressure sensor that is independent of temperature characteristics and has good linearity.
以下、この発明の一実施例を図について説明す
る。第２図において、１は半導体圧力センサで、
ブリツジに組まれた半導体歪計素子１２により構
成されている。２は一端が半導体圧力センサ１の
出力端子OUTに接続された抵抗、３は半導体圧
力センサ１の入力端子IN間に接続された電源、
６は温度により電圧が変化する感温電源で、半導
体圧力センサ１の一方の入力端子と抵抗２の他端
間に接続されている。１０は上記感温電源６およ
び抵抗２からなる感温電圧発生回路である。 An embodiment of the present invention will be described below with reference to the drawings. In Fig. 2, 1 is a semiconductor pressure sensor;
It is composed of semiconductor strain gauge elements 12 assembled into a bridge. 2 is a resistor whose one end is connected to the output terminal OUT of the semiconductor pressure sensor 1; 3 is a power supply connected between the input terminals IN of the semiconductor pressure sensor 1;
Reference numeral 6 denotes a temperature-sensitive power supply whose voltage changes depending on the temperature, and is connected between one input terminal of the semiconductor pressure sensor 1 and the other end of the resistor 2 . Reference numeral 10 denotes a temperature-sensitive voltage generating circuit comprising the above-mentioned temperature-sensitive power supply 6 and resistor 2.
次に作用について説明する。 Next, the effect will be explained.
電源３の電圧をVB、抵抗２の抵抗値をR2、感
温電源６の電圧をVref（＝Vrefo・（１＋γt））、圧
力センサ１のゲージ抵抗値をRG（＝RG0・（１＋αt
＋βt2））とすると、圧力センサ１のオフセツト電
圧温度補償量Voffcは次式で表わされる。 The voltage of the power supply 3 is V B , the resistance value of the resistor 2 is R 2 , the voltage of the temperature-sensitive power supply 6 is Vref (=Vrefo・(1+γt)), and the gauge resistance value of the pressure sensor 1 is R G (=R G0・( 1+αt
+βt 2 )), the offset voltage temperature compensation amount Voffc of the pressure sensor 1 is expressed by the following equation.
Voffc＝１／2n・〔（Vrefo−VB／２・αt＋Vrefo・γt
＋｛Vrefo（αγ＋β）−VB／２β｝t2〕 (2)
但し、ｎ＝R2／RG0
ここでVrefo＝VB／２とすると、
Voffc＝VB／4n・（γt＋αγt2） (3)
となり、α＝1.2×10-3／℃、β＝７×10-6／℃、
γ＝２×10-3／℃の場合についてVoffcを計算す
ると、式(3)は次式のようになる。Voffc=1/2n・[(Vrefo−V B /2・αt+Vrefo・γt + {Vrefo (αγ+β)−V B /2β}t 2 ] (2) However, n=R 2 /R G0 where Vrefo=V If B /2, then Voffc=V B /4n・(γt+αγt 2 ) (3), α=1.2×10 -3 /℃, β=7×10 -6 /℃,
When Voffc is calculated for the case of γ=2×10 -3 /°C, equation (3) becomes as follows.
Voffc＝VB／4n・（２×10-3＋2.4×10-6t）ｔ(4)
従来の場合、
Voffc＝VB／4n・（1.2×10-3＋７×10-6t）ｔ(5)
であるから、温度変化100℃の場合、その非直線
性（Non−Linearlity；NL）はそれぞれ
従来の場合、NL＝14.6％
本発明の場合、NL＝３％
となり、約1/5に改善される。Voffc=V B /4n・(2×10 -3 +2.4×10 -6 t)t(4) In the conventional case, Voffc=V B /4n・(1.2×10 -3 +7×10 -6 t) t(5), so when the temperature change is 100°C, the non-linearity (NL) is NL = 14.6% in the conventional case and NL = 3% in the case of the present invention, which is approximately 1/ Improved to 5.
なお、上記実施例では、感温電圧発生回路１０
を、温度に応じて電源電圧が変化する感温電源６
と抵抗２とで構成する例について説明したが、こ
の感温電圧発生回路１０は第３図に示すように、
抵抗４と感温抵抗５とからなり電源３の電圧を分
圧する分圧回路１１と、この分圧回路１１の出力
を半導体圧力センサ１の出力端子OUTに印加す
る抵抗２とで構成してもよく、上記実施例と同様
の効果を奏する。又、上記実施例では電源３の電
圧が一定で、電源６の電圧が温度によつて変化す
る場合を示したが、電源６の電圧が一定で、電源
３の電圧が温度によつて変化するものとした場合
でも同様の効果を奏する。この場合、VB＝VB0
（１＋γt）とすると、オフセツト電圧温度補償量
Voffcは次式のようになる。 Note that in the above embodiment, the temperature-sensitive voltage generation circuit 10
, a temperature-sensitive power supply 6 whose power supply voltage changes depending on the temperature.
Although an example has been described in which the thermosensitive voltage generating circuit 10 is configured with the resistor 2 and the resistor 2, as shown in FIG.
A voltage dividing circuit 11 comprising a resistor 4 and a temperature-sensitive resistor 5 and dividing the voltage of the power supply 3, and a resistor 2 applying the output of this voltage dividing circuit 11 to the output terminal OUT of the semiconductor pressure sensor 1 may also be used. In many cases, the same effects as in the above embodiment can be achieved. Further, in the above embodiment, the voltage of the power source 3 is constant and the voltage of the power source 6 changes depending on the temperature, but the voltage of the power source 6 is constant and the voltage of the power source 3 changes depending on the temperature. The same effect can be achieved even if it is In this case, V B = V B0
(1+γt), offset voltage temperature compensation amount
Voffc is as follows.
Voffc１／2n｛（VrefVB0／２）・αtVB／２γt
＋Vrefβt2VB／２（βt2＋α・γt2）｝ (6)
以上のように、この発明によれば、オフセツト
電圧の温度補償を補償用抵抗に印加される電圧の
温度変化で行うようにしたので圧力センサのゲー
ジ抵抗の温度係数に依存しない、精度の高い半導
体圧力センサのオフセツト電圧温度補償回路が容
易に得られる効果がある。Voffc1/2n {(VrefV B0 /2)・αtV B /2γt +Vrefβt 2 V B /2 (βt 2 +α・γt 2 )} (6) As described above, according to the present invention, temperature compensation of offset voltage can be performed. Since this is carried out using temperature changes in the voltage applied to the compensation resistor, it is possible to easily obtain a highly accurate offset voltage temperature compensation circuit for a semiconductor pressure sensor that does not depend on the temperature coefficient of the gauge resistance of the pressure sensor.
第１図は従来の半導体圧力センサのオフセツト
電圧温度補償回路を示す回路図、第２図はこの発
明の一実施例による半導体圧力センサのオフセツ
ト電圧温度補償回路を示す回路図、第３図はこの
発明の他の実施例を示す回路図である。
１……半導体圧力センサ、IN……入力端子、
OUT……出力端子、２……抵抗、３……電源、
４……抵抗、５……感温抵抗、６……感温電源、
１０……感温電圧発生回路、１１……分圧回路、
１２……半導体歪計素子。なお図中同一符号は同
一又は相当部分を示す。
FIG. 1 is a circuit diagram showing a conventional offset voltage temperature compensation circuit for a semiconductor pressure sensor, FIG. 2 is a circuit diagram showing an offset voltage temperature compensation circuit for a semiconductor pressure sensor according to an embodiment of the present invention, and FIG. 3 is a circuit diagram showing this circuit. FIG. 3 is a circuit diagram showing another embodiment of the invention. 1...Semiconductor pressure sensor, IN...Input terminal,
OUT...Output terminal, 2...Resistor, 3...Power supply,
4...Resistor, 5...Temperature-sensitive resistor, 6...Temperature-sensitive power supply,
10... Temperature sensitive voltage generation circuit, 11... Voltage dividing circuit,
12...Semiconductor strain meter element. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
成されて圧力を電気信号に変換する半導体圧力セ
ンサと、該半導体圧力センサの両入力端子間に電
源電圧を印加する電源と、上記半導体圧力センサ
の出力端子に温度に応じて変化する電圧を与える
感温電圧発生回路とを備え、この感温電圧発生回
路が、一端が上記半導体圧力センサの一方の入力
端子に他端が該半導体圧力センサの出力端子に接
続された、その電源電圧が温度ににより変化する
感温電圧と抵抗との直列回路であることを特徴と
する半導体圧力センサのオフセツト電圧温度補償
回路。 ２ ブリツジに組まれた半導体歪計素子により構
成されて圧力を電気信号に変換する半導体圧力セ
ンサと、該半導体圧力センサの両入力端子間に電
源電圧を印加する電源と、上記半導体圧力センサ
の出力端子に温度に応じて変化する電圧を与える
感温電圧発生回路とを備え、この感温電圧発生回
路が、上記電源の両端間に相互に直列に接続され
た抵抗と感温抵抗からなる分圧回路と、この分圧
回路による分圧電圧を上記半導体圧力センサの出
力端子に加える抵抗とからなるものであることを
特徴とする半導体圧力センサのオフセツト電圧温
度補償回路。[Scope of Claims] 1. A semiconductor pressure sensor configured with a semiconductor strain gauge element assembled in a bridge and converting pressure into an electrical signal; a power source that applies a power supply voltage between both input terminals of the semiconductor pressure sensor; and a temperature-sensitive voltage generation circuit that applies a voltage that changes according to temperature to the output terminal of the semiconductor pressure sensor, the temperature-sensing voltage generation circuit having one end connected to one input terminal of the semiconductor pressure sensor and the other end connected to the output terminal of the semiconductor pressure sensor. 1. An offset voltage temperature compensation circuit for a semiconductor pressure sensor, characterized in that the circuit is a series circuit of a temperature-sensitive voltage whose power supply voltage changes depending on temperature and a resistor, which is connected to an output terminal of the semiconductor pressure sensor. 2. A semiconductor pressure sensor configured with a semiconductor strain gauge element assembled in a bridge and converting pressure into an electrical signal, a power source that applies a power supply voltage between both input terminals of the semiconductor pressure sensor, and an output of the semiconductor pressure sensor. and a temperature-sensitive voltage generation circuit that applies a voltage that changes depending on the temperature to the terminal, and this temperature-sensitive voltage generation circuit is a voltage divider consisting of a resistor and a temperature-sensitive resistor connected in series between both ends of the power supply. 1. An offset voltage temperature compensation circuit for a semiconductor pressure sensor, comprising a circuit and a resistor for applying a divided voltage from the voltage dividing circuit to an output terminal of the semiconductor pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14871582A JPS5937417A (en) | 1982-08-25 | 1982-08-25 | Temperature compensating circuit of offset voltage of semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14871582A JPS5937417A (en) | 1982-08-25 | 1982-08-25 | Temperature compensating circuit of offset voltage of semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5937417A JPS5937417A (en) | 1984-02-29 |
| JPH057653B2 true JPH057653B2 (en) | 1993-01-29 |
Family
ID=15458970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14871582A Granted JPS5937417A (en) | 1982-08-25 | 1982-08-25 | Temperature compensating circuit of offset voltage of semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5937417A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797010B2 (en) * | 1986-03-26 | 1995-10-18 | 株式会社日立製作所 | Semiconductor strain gage bridge circuit |
-
1982
- 1982-08-25 JP JP14871582A patent/JPS5937417A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5937417A (en) | 1984-02-29 |
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