JPS5935427A - Method and apparatus for implanting ion - Google Patents

Method and apparatus for implanting ion

Info

Publication number
JPS5935427A
JPS5935427A JP14635382A JP14635382A JPS5935427A JP S5935427 A JPS5935427 A JP S5935427A JP 14635382 A JP14635382 A JP 14635382A JP 14635382 A JP14635382 A JP 14635382A JP S5935427 A JPS5935427 A JP S5935427A
Authority
JP
Japan
Prior art keywords
ion implantation
wafer
chamber
vacuum preliminary
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14635382A
Other languages
Japanese (ja)
Other versions
JPS633449B2 (en
Inventor
Toshiyuki Oota
敏行 太田
Toshio Wada
和田　俊男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14635382A priority Critical patent/JPS5935427A/en
Publication of JPS5935427A publication Critical patent/JPS5935427A/en
Publication of JPS633449B2 publication Critical patent/JPS633449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the moisture absorption of a photo-resist, and to enable excellent ion implantation by heat-treting a wafer, to which the resist is developed, in vacuum and instantaneously implanting ions. CONSTITUTION:Wafers 9 are carried into a vacuum chamber 2 by a belt 6 and heated by a heater 10, and heat-treated to form clean strong patterns. Ions are implanted to the wafers forwarded to the next chamber by an ion gun 7. Since the resist does not absorb moisture due to a contact with atmospheric air during that time, there are no degas induced and degradation of the photo-resist, and excellent ion implantation can be executed.

Description

【発明の詳細な説明】 本発明は半導体ウェーハのイオン注入方法及びその装置
にかかシ、特にフォトレジストの吸湿をおさえ良好なイ
オン注入を行う方法及びその装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for ion implantation into a semiconductor wafer, and more particularly to a method and apparatus for performing good ion implantation while suppressing moisture absorption in a photoresist.

従来のイオン注入は酸化膜、フォトレジスト。Conventional ion implantation uses oxide film and photoresist.

ポリシリコン、アルミニウムなど種々の材料をマスクと
して行われているが、プロセスの容易さという力、から
はフォトレジストをマスクとして行うのが最も好適であ
る。Although various materials such as polysilicon and aluminum are used as a mask, it is most suitable to use a photoresist as a mask because of the ease of the process.

従来のレジストをマスクとしたイオン注入方法はまず前
処理された半導体ウェーハに回転塗布法により７オトレ
ジストを塗布し、９０〜１００”０　　で前焼きされ、
次に露光・現像され、次に１２０°α３０分加熱によシ
焼きしめされる。一般にこの焼きしめられたウェーノ１
は保管され、遂次イオン注入される。In the conventional ion implantation method using a resist as a mask, a 700m resist is first applied to a pretreated semiconductor wafer by a spin coating method, and then prebaked at a temperature of 90 to 100"0.
Next, it is exposed and developed, and then baked by heating at 120 degrees α for 30 minutes. Generally, this baked weno 1
is stored and sequentially ion-implanted.

第１図は従来のイオン注入装置の説明用の概略断面図で
ある。図に示されているようにイオン注入装置は真空予
備室１、イオン注入室２、真空予備室３よシ構成され、
３室共に減圧され、かつイオン注入室２はイオン注入用
のガス導入口が設けられている（図面には表示されてい
ない）。イオン注入にあたっては、まず前記ポストベー
ククされたウェーハ５をキャリアに充填し真空予備室２
に設置する。ウェーハはベルト６によ勺一枚づつイオン
−注入室におくられ、イオン銃７（点線で囲まれた部分
）から放射されるイオンが注入される。FIG. 1 is a schematic cross-sectional view for explaining a conventional ion implantation device. As shown in the figure, the ion implantation apparatus consists of a vacuum preliminary chamber 1, an ion implantation chamber 2, and a vacuum preliminary chamber 3.
All three chambers are evacuated, and ion implantation chamber 2 is provided with a gas inlet for ion implantation (not shown in the drawing). For ion implantation, the post-baked wafer 5 is first filled into a carrier and placed in the vacuum preliminary chamber 2.
to be installed. The wafers are placed one by one into an ion implantation chamber by a belt 6, and ions emitted from an ion gun 7 (the area surrounded by a dotted line) are implanted.

なお５′はウェーハである０イオン注入が終るとベルト
６によりウェーハは真空予備室に移動しキャリア４にウ
ェーハ５“とじて収納される。Note that 5' is a wafer. When the ion implantation is completed, the wafer is moved to a vacuum preliminary chamber by a belt 6, and the wafer 5'' is stored in a carrier 4.

以上の工程においてイオン注入室に入るウェーハは別の
加熱装置によシ予めボストベークによシ焼きしめられて
いるが、一般には焼きしめ後、時間と共に吸湿する。吸
湿すると７オトレジスト膜はイオン注入時、イオンによ
る脱ガスが多くなフイオン注入装置を汚染するばか夛で
なく、イオン注入によるフォトレジストの変質が大きく
なシ、マスクとしての効果が小さくなるという問題が発
生した〇 本発明は以上の問題点に対処してなされたもので、フォ
トレジストの加湿をおさえ、良好なイオン注入が行なえ
るイオン注入方法及びその装置を提供するにある。In the above process, the wafer entering the ion implantation chamber is prebaked by a separate heating device by a boss bake, but generally, after baking, the wafer absorbs moisture over time. If the photoresist film absorbs moisture, it not only contaminates the ion implantation equipment where a lot of gas is released by ions during ion implantation, but also causes problems such as the deterioration of the photoresist due to ion implantation and its effectiveness as a mask. The present invention has been made to address the above-mentioned problems, and it is an object of the present invention to provide an ion implantation method and apparatus that can suppress humidification of photoresist and perform good ion implantation.

また他の目的は工程を簡略化したイオン注入方法及びそ
の装置を提供するにある。Another object of the present invention is to provide an ion implantation method and apparatus with simplified steps.

木簡１の発明の要旨は、フォトレジストを塗布現像した
ウェーハをイオン注入装置の真空予備室に送入する工程
と、前記ウェーハを加熱しフォトレジストを焼きしめる
工程と、前記焼きしめたウェーハをイオン注入室に送入
する工程と、送入されたウェーハにイオン注入する工程
とを含むことを特徴とするウェー７・のイオン注入方法
にある。The gist of the invention in Wooden Tablet 1 is to transport a wafer coated and developed with photoresist into a vacuum preliminary chamber of an ion implanter, to heat the wafer and bake the photoresist, and to ionize the baked wafer. A method for ion implanting a wafer 7, characterized by including the steps of introducing the wafer into an implantation chamber and implanting ions into the introduced wafer.

また木簡２の発明の要旨は、真空予備室、イオン注入室
を備えたイオン注入装置において、前記真空予備室に設
けられたウェーハの７オトレジストの焼きしめ手段と、
焼きしめ後のウエーノ・を外部に出すことなく真空予備
室よシイオン注入室に送入しイオン注入終了後真空予備
室に送出する手段とを含むことを特徴とするイオン注入
装置にある〇 以下図面を参照し本発明の詳細な説明 第２図は木簡１及び第２の発明の説明のための一実施例
によるイオン注入装置の概略断面図である。The gist of the invention of Wooden Tablet 2 is that, in an ion implantation apparatus equipped with a vacuum preliminary chamber and an ion implantation chamber, means for baking an otoresist of a wafer provided in the vacuum preliminary chamber;
An ion implantation apparatus characterized in that it includes a means for transporting the wafer after baking into the vacuum preparatory chamber to the ion implantation chamber without letting it out to the outside, and sending it to the vacuum preparatory chamber after the ion implantation is completed. Detailed explanation of the present invention with reference to FIG. 2 is a schematic cross-sectional view of an ion implantation device according to an embodiment for explaining the wooden tablet 1 and the second invention.

図において焼きしめ前のウェーハ９はベルト６により真
空予備室２に搬入され、そこでボストベーク用加熱ヒー
タ１０によクボストベークされる。In the figure, a wafer 9 before baking is carried into a vacuum preparatory chamber 2 by a belt 6, where it is post-baked by a post-baking heater 10.

このボストベークによシフォトレジストは初めて焼きし
められ清浄で強固なフォトレジストパターンが得られる
。次にこのポストベークされたフォトレジストパターン
を持つウェーハはイオン注入室に通じるベルト６によシ
イオン注入室に搬入される。次いで搬入されたウエーノ
・はイオン銃７（点線で囲まれた部分）よ少放射される
イオンによ）イオン注入される。このようにウェーハは
真空中でベークされ引続きイオン注入されるため、イオ
ン注入室に搬入されたウェーハ９“　のフォトレジスト
のパターンは大気に触れて起る吸湿はなく、従ってそれ
によってひき起される脱ガスやフォトレジストの劣化は
なく、またその結果として生ずるマスク性の劣化も生じ
ない。This boost bake bakes the photoresist for the first time, resulting in a clean and strong photoresist pattern. The wafer with this post-baked photoresist pattern is then transported into the ion implantation chamber by a belt 6 leading to the ion implantation chamber. Next, the loaded wafer is ion-implanted by ions emitted from the ion gun 7 (the area surrounded by the dotted line). Since the wafer is baked in a vacuum and subsequently ion-implanted in this way, the photoresist pattern of the wafer 9" carried into the ion-implantation chamber is free from moisture absorption caused by exposure to the atmosphere. There is no outgassing, no photoresist degradation, and no resulting mask quality degradation.

そのため目的とする良好なイオン注入が実施できる。Therefore, the intended and good ion implantation can be carried out.

なお第２図の焼きしめ用のヒーターは抵抗加熱方式であ
るが、赤外線加熱方式、又は高周波加熱方式を採用すれ
は装置の稼動条件の制御，保守等よ）効果を発揮できる
。Although the heat-sealing heater shown in Fig. 2 is of a resistance heating type, adopting an infrared heating type or a high-frequency heating type can be effective in controlling the operating conditions of the device, maintenance, etc.).

また以上の実施例からわかるとおり木簡１及び第２の発
明ではフォトレジスト膜のボストベークを別の加熱装置
によフ行う必要はなく工程の短縮設備の簡略化の効果も
顕著である。Further, as can be seen from the above embodiments, in the wooden tablets 1 and 2, there is no need to perform post-baking of the photoresist film using a separate heating device, and the effect of shortening the process and simplifying the equipment is also significant.

以上説明から明らかなように本発明によればフォトレジ
ストの加湿をおさえ良好なイオン注入ができると共に工
程並びに装置の簡略化をはかることが可能である。As is clear from the above description, according to the present invention, it is possible to suppress humidification of the photoresist, to perform good ion implantation, and to simplify the process and equipment.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のイオン注入方法並びに装置の説明用の装
置の概略断面図、第２図は本発明の一実施例によるイオ
ン注入方法並びに装置の説明用の装置の概略断面図であ
る。 １．３・・・・・・真空予備室、２・・・・・・イオン
注入室、４・・・・・・キャリア、５・・・・・・ポス
トベークされたつ工−ハ、５′・・・・・・イオン注入
中のウェーハ、５“・・・・・・イオン注入済のウェー
ハ、６・・・・・・ベルト、７・・・・・・イオン銃（
点線内）、９・・・・・・ポストベーク前のウェーハー
ｑ・・・・・・ボストベーク中のウェーハ　ｃｌ／・・
・・・・イオン注入中のウェーハ、　ｆ−・・・・・イ
オン注入済のウェーハ、１０・・・・・・ボストベーク
用のヒーター。 代理人　弁理士　　内　原　　　晋 寮１圀 寮２図FIG. 1 is a schematic cross-sectional view of an apparatus for explaining a conventional ion implantation method and apparatus, and FIG. 2 is a schematic cross-sectional view of an apparatus for explaining an ion implantation method and apparatus according to an embodiment of the present invention. 1.3...Vacuum preliminary chamber, 2...Ion implantation chamber, 4...Carrier, 5...Post-baked tube-c, 5' ...Wafer undergoing ion implantation, 5"...Wafer with ion implantation completed, 6...Belt, 7...Ion gun (
(within the dotted line), 9...Wafer q before postbake...Wafer during postbake cl/...
...Wafer undergoing ion implantation, f-...Wafer with ion implantation completed, 10...Heater for post-bake. Agent Patent Attorney Shinryo Uchihara 1 Kokuryo 2

Claims (1)

【特許請求の範囲】 （１）　　フォトレジストを塗布、現像したウェーハを
イオン注入装置の真空予備室に送入する工程と、前記ウ
ェーハを加熱しフォトレジスＩｆ焼きしめる工程と、前
記フォトレジストを焼きしめたウェーハをイオン注入室
に送入する工程と、送入されたウェーハにイオン注入す
る工程とを含むこと全特徴とするウェーハのイオン注入
方法。 （２）真空予備室、イオン注入室を備えたイオン注入装
置において、前記真空予備室に設けられたウェーハの７
オトレジストの焼きしめ手段と、焼きしめ後のウェーハ
を外部に出すことなく真空予備室よりイオン注入室に送
入しイオン注入終了後真空予備室に送出する手段とを含
むことを特徴とするイオン注入装置。 （８）真空予備室のウェーハの焼きしめ手段が、高周波
加熱方式であることを特徴とする特許請求の範囲第（２
）項記載のイオン注入装置。 （４）真空予備室のウェーハの焼きしめ手段が、赤外線
加熱方式であることを特徴とする特許請求の範囲第（２
）項記載のイオン注入装置。[Scope of Claims] (1) A step of sending a wafer coated with a photoresist and developed into a vacuum preliminary chamber of an ion implanter, a step of heating the wafer and baking the photoresist If, and baking the photoresist. A wafer ion implantation method comprising the steps of: transporting a cooled wafer into an ion implantation chamber; and implanting ions into the wafer. (2) In an ion implantation apparatus equipped with a vacuum preliminary chamber and an ion implantation chamber, the wafer 7 provided in the vacuum preliminary chamber
Ion implantation characterized by comprising means for baking and tightening the otoresist, and means for feeding the baked wafer from the vacuum preliminary chamber into the ion implantation chamber without taking it outside, and sending it to the vacuum preliminary chamber after the ion implantation is completed. Device. (8) Claim (2) characterized in that the wafer baking means in the vacuum preliminary chamber is a high-frequency heating method.
) The ion implantation device described in section 2. (4) Claim (2) characterized in that the wafer baking means in the vacuum preliminary chamber is an infrared heating method.
) The ion implantation device described in section 2.
JP14635382A 1982-08-24 1982-08-24 Method and apparatus for implanting ion Granted JPS5935427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14635382A JPS5935427A (en) 1982-08-24 1982-08-24 Method and apparatus for implanting ion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14635382A JPS5935427A (en) 1982-08-24 1982-08-24 Method and apparatus for implanting ion

Publications (2)

Publication Number Publication Date
JPS5935427A true JPS5935427A (en) 1984-02-27
JPS633449B2 JPS633449B2 (en) 1988-01-23

Family

ID=15405789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14635382A Granted JPS5935427A (en) 1982-08-24 1982-08-24 Method and apparatus for implanting ion

Country Status (1)

Country Link
JP (1) JPS5935427A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0296330A (en) * 1988-09-30 1990-04-09 Fujitsu Ltd Manufacture of semiconductor device
JPH02295114A (en) * 1989-05-10 1990-12-06 Yamaha Corp Method and apparatus for ion implantation
JPH054464U (en) * 1991-06-27 1993-01-22 株式会社エヌ・エム・ビーセミコンダクター Ion implanter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0296330A (en) * 1988-09-30 1990-04-09 Fujitsu Ltd Manufacture of semiconductor device
JPH02295114A (en) * 1989-05-10 1990-12-06 Yamaha Corp Method and apparatus for ion implantation
JPH054464U (en) * 1991-06-27 1993-01-22 株式会社エヌ・エム・ビーセミコンダクター Ion implanter

Also Published As

Publication number Publication date
JPS633449B2 (en) 1988-01-23

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