JPS5935128B2 - High permittivity porcelain dielectric material - Google Patents
High permittivity porcelain dielectric materialInfo
- Publication number
- JPS5935128B2 JPS5935128B2 JP51101900A JP10190076A JPS5935128B2 JP S5935128 B2 JPS5935128 B2 JP S5935128B2 JP 51101900 A JP51101900 A JP 51101900A JP 10190076 A JP10190076 A JP 10190076A JP S5935128 B2 JPS5935128 B2 JP S5935128B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- dielectric constant
- temperature
- dielectric material
- high permittivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Description
【発明の詳細な説明】
本発明は高い誘電率と温度に対して、小さい誘電率変化
率を有する高誘電率磁器誘電体材料に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high permittivity ceramic dielectric material having a high permittivity and a small rate of change in permittivity with respect to temperature.
従来より高誘電率磁器誘電体材料としてはＢａＴｉ０。Conventionally, BaTi0 has been used as a high permittivity ceramic dielectric material.
系磁器組成物が用いられてきたが、これらの磁器組成物
は磁器誘電体材料の誘電率を増大させるためにＢａＴｉ
Ｏ３のキューリ点を常温付近に移動させる目的で、ｃａ
ｓｎｏ３３Ｂａｓｎｏ３、ＢａＺｒＯ３、ＳｒＴｉＯ３
などの副成分が用いられてきた。これらの成分は誘電率
を３０００〜７０００と高くすると温度（−２５℃〜＋
８５℃）に対する誘電率の変化率が＋３０％〜−８０
％と大きく、また逆に誘電率の変化率を＋２０〜−３０
％以内と小さくすると、その誘電率は１５００〜２５０
０と低くなる欠点があり、また焼結温度が１３６０℃〜
１４２０℃と高かつた。本発明はかかる欠点を除去しよ
うとして成されたもので、高い誘電率２９００〜４３０
０を有するとともに温度（−２５℃〜＋ ８５℃）に対
する誘電率の変化率を＋２０％〜−３０％以内の範囲に
してあり、しかも比較的低温の１２０００Ｃ〜１２６０
℃で焼結できる利点を有する高誘電率磁器誘電体材料を
提供しようとするものである。These ceramic compositions contain BaTi to increase the dielectric constant of the porcelain dielectric material.
In order to move the Curie point of O3 to around room temperature, ca
sno33Basno3, BaZrO3, SrTiO3
Sub-components such as When these components have a high dielectric constant of 3000 to 7000, the temperature (-25℃ to +
The rate of change in dielectric constant relative to 85℃) is +30% to -80
%, and conversely, the rate of change in permittivity is +20 to -30
%, the dielectric constant is 1500-250
There is a drawback that the sintering temperature is as low as 0, and the sintering temperature is 1360℃~
The temperature was as high as 1420℃. The present invention was made to eliminate such drawbacks, and has a high dielectric constant of 2900 to 430.
0, and the rate of change in dielectric constant with respect to temperature (-25°C to +85°C) is within +20% to -30%, and has a relatively low temperature of 12000°C to 1260°C.
The present invention aims to provide a high permittivity ceramic dielectric material that has the advantage of being sinterable at .degree.
本発明はかかる諸特性を同時に満足させる高誘電率磁器
組成物に関するものであり、その組成はＢａＴｉＯ３・
・・・・・・・・ ７５．２〜８９．８モル％Ｂｉ２Ｏ
３・・・・・・・・・ １．６〜３．０モル％ＺｒＯ２
・・・・・・・・・ ２．６〜６．２モル％ＴｉＯ２・
・・・・・・・・ ２．０〜５．２モル％ＣｅＯ２・・
・・・・・・・ ４．０〜１０．４モル％からなること
を特徴とするものである。The present invention relates to a high dielectric constant ceramic composition that satisfies these various properties at the same time, and its composition is BaTiO3.
・・・・・・・・・ 75.2 to 89.8 mol% Bi2O
3...... 1.6-3.0 mol% ZrO2
・・・・・・・・・ 2.6 to 6.2 mol% TiO2・
・・・・・・・・・ 2.0 to 5.2 mol% CeO2・・
...... It is characterized by consisting of 4.0 to 10.4 mol%.
上記組成範囲決定に関しては、Ｂｉ２Ｏ３の含有量が１
．６モル％に満たない場合は誘電率の温度に対する変化
率が大きくなり、また誘電正接も高くなり、また３．０
モル％を越えると誘電率が著しく減少して従来品と大差
のないものとなる。Regarding the above composition range determination, the Bi2O3 content is 1
．． If it is less than 6 mol%, the rate of change in dielectric constant with respect to temperature will be large, the dielectric loss tangent will also be high, and 3.0
When it exceeds mol%, the dielectric constant decreases significantly and becomes almost the same as conventional products.
ＺｒＯ２が２．６モル％に満たないと誘電率の温度に対
する変化率が高くなり、目標とする特性が得られない。
また６．２モル％を越えると誘電率が小さくなり好まし
くない。ＴｉＯ２はその含有量が２．０モル％に満たな
いと磁器の焼結が困難となる。５．２モル％を越えると
誘電率の温度に対する変化率が大きくなり、改良効果が
顕著でない。If ZrO2 is less than 2.6 mol %, the rate of change in dielectric constant with respect to temperature becomes high, making it impossible to obtain the desired characteristics.
Moreover, if it exceeds 6.2 mol %, the dielectric constant decreases, which is not preferable. If the content of TiO2 is less than 2.0 mol%, sintering of porcelain becomes difficult. If it exceeds 5.2 mol %, the rate of change in dielectric constant with respect to temperature becomes large, and the improvement effect is not significant.
ｃｅｏ２の含有量が４．０モル％未満であれば誘電率が
小さくなるとともに素地が多孔質となり好ましくない。
また１０．４モル％を越えると誘電率の温度に対する変
化率が大きくなり好ましくない。そしてＢａＴｉＯ３が
７５．２モル％に満たない場合磁器に融着が生じる。ま
たこの含有量が８９．８モル％を越えると磁器の焼結温
度が高くなりすぎ好ましくない。以下、本発明を実施例
について詳細に説明する。If the content of ceo2 is less than 4.0 mol%, the dielectric constant becomes low and the base material becomes porous, which is not preferable.
Moreover, if it exceeds 10.4 mol %, the rate of change in dielectric constant with respect to temperature becomes large, which is not preferable. When BaTiO3 is less than 75.2 mol%, fusion occurs in the porcelain. Moreover, if this content exceeds 89.8 mol%, the sintering temperature of the porcelain becomes too high, which is not preferable. Hereinafter, the present invention will be described in detail with reference to examples.
試料は次のようにして作成した。すなわち、等モル比の
ＢａｃＯ３とＴｉＯ２を混合して１１５００Ｃで２時間
仮焼し、この反応物を粉砕してＢａＴｉＯ３を作成する
。次にＢｌ２Ｏ３，ＺｒＯ２，ＴｉＯ２，ＣｅＯ２を所
要の組成比となるように秤量する。これらをポツトミル
にて混合したのち、バインダーを加えて１０００ｋ９／
Ｃｌ！ｌの圧力で直径１１顛、厚み０．６ｍｍの円板に
成形する。これを１２００℃〜１２６０゜Ｃで１時間焼
成する。このようにして得られた焼結体に銀電極を付与
して試料を作成した。上記方法により作成した試料の諸
特性を次表に示す。なお、試料の測定に際し、誘電率は
２０℃、１ＫＨｚ、１ｒｍｓにて測定し、誘電正接は２
５℃、１ＫＨｚ、１ｒｍｓで測定したものである。誘電
率の温度（−２５〜＋８５℃）に対する変化率（誘電率
温度変化率）は２『Ｃを基準にして求めたものである。
なお、試料番号１〜２４は本発明に係るものであり、試
料番号２５〜３２は本発明以外のもので誘電率が小さい
。The sample was prepared as follows. That is, BacO3 and TiO2 in an equimolar ratio are mixed, calcined at 11500C for 2 hours, and the reactant is pulverized to produce BaTiO3. Next, Bl2O3, ZrO2, TiO2, and CeO2 are weighed so as to have the required composition ratio. After mixing these in a pot mill, add a binder and make 1000k9/
Cl! Form into a disk with a diameter of 11 mm and a thickness of 0.6 mm using a pressure of 1 liter. This is baked at 1200°C to 1260°C for 1 hour. A sample was prepared by adding a silver electrode to the sintered body thus obtained. The properties of the samples prepared by the above method are shown in the table below. In addition, when measuring the sample, the dielectric constant was measured at 20°C, 1KHz, 1rms, and the dielectric loss tangent was 2.
It was measured at 5° C., 1 KHz, and 1 rms. The rate of change in dielectric constant with respect to temperature (-25 to +85°C) (rate of change in dielectric constant with temperature) was determined based on 2'C.
Note that sample numbers 1 to 24 are according to the present invention, and sample numbers 25 to 32 are samples other than the present invention and have a small dielectric constant.
また誘電率の温度に対する変化率の大きいものであり、
本発明の組成範囲から逸脱するものである。以上のよう
に本発明による高誘電率磁器誘電体材料は、高い誘電率
と温度に対して小さな誘電率の変化率を有し、また極め
て低温度で焼結できるなど、従来から提案されてきた材
料では得ることができなかつた優れた特性を有するなど
工業的価値大で量産に富むものである。It also has a large rate of change in dielectric constant with respect to temperature,
This deviates from the composition range of the present invention. As described above, the high permittivity ceramic dielectric material according to the present invention has a high permittivity, a small rate of change in permittivity with respect to temperature, and can be sintered at an extremely low temperature, which has been proposed in the past. It has excellent properties that cannot be obtained with other materials, has great industrial value, and is suitable for mass production.
Claims (1)
．８モル％Ｂｉ＿２Ｏ＿３・・・・・・・・・１．６〜
３．０モル％ＺｒＯ＿２・・・・・・・・・２．６〜６
．２モル％ＴｉＯ＿２・・・・・・・・・２．０〜５．
２モル％ＣｅＯ＿２・・・・・・・・・４．０〜１０．
４モル％の組成範囲からなることを特徴とする高誘電率
磁器誘電体材料。1 BaTiO_3・・・・・・75.2～89
．． 8 mol% Bi_2O_3...1.6~
3.0 mol% ZrO_2...2.6-6
．． 2 mol% TiO_2...2.0-5.
2 mol% CeO_2...4.0-10.
A high permittivity ceramic dielectric material characterized by having a composition range of 4 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51101900A JPS5935128B2 (en) | 1976-08-25 | 1976-08-25 | High permittivity porcelain dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51101900A JPS5935128B2 (en) | 1976-08-25 | 1976-08-25 | High permittivity porcelain dielectric material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5326999A JPS5326999A (en) | 1978-03-13 |
| JPS5935128B2 true JPS5935128B2 (en) | 1984-08-27 |
Family
ID=14312782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51101900A Expired JPS5935128B2 (en) | 1976-08-25 | 1976-08-25 | High permittivity porcelain dielectric material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935128B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5414433B2 (en) * | 2008-09-30 | 2014-02-12 | キヤノン株式会社 | Ferroelectric ceramic material |
-
1976
- 1976-08-25 JP JP51101900A patent/JPS5935128B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5326999A (en) | 1978-03-13 |
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