JPS5934653A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain the semiconductor device, in which a resistance region consisting of a conductor can be formed in a small area, by connecting the resistance region to an electrode body through an insulating resistance film formed through a plasma chemical vapor growth method. CONSTITUTION:The insulating resistance films 6 are brought to a plasma state by applying a strong electric field of a gas of silane, ammonia, nitrogen, etc. at a temperature of 300-400 deg.C, and vapor-grown to a P type diffusion layer 2 as Si3N4. According to the constitution, since the silicon nitride films 6 are not changed into complete insulating films and are formed in structure in which currents leak partialy, dielectric breakdown is not generated so far as sufficiently large voltage is applied, and the films 6 display approximately ohmic property. Consequently, the area of the diffusion layer 2 can be reduced to a half or less because one part of resistance value can be obtained by the films 6.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device having a resistive region extending from a conductive layer.

Conventionally, there has been a semiconductor device of this type as shown in FIG. In the figure, (1) is a silicon substrate made of an N-type conductor, and (2) is a silicon substrate formed on the silicon substrate (1).
The type diffusion layer (3) is an insulating film made of, for example, silicon dioxide, and (4) is an electrode body electrically connected to other semiconductor devices or the outside, and is made of, for example, aluminum.

In the above configuration, when a voltage is applied to the electrode bodies (4), (4), a current flows through the P-type diffusion layer (2), and the current value and voltage value are in a proportional relationship. 2) operates as a resistance element having a predetermined resistance value.

Furthermore, as shown in FIG. 2, even if a polysilicon layer (5) is formed as a resistance element, the device operates in the same manner as the device shown in FIG. 1.

However, in the semiconductor devices shown in FIGS. 1 and 2,
In order to increase the resistance, it is necessary to lengthen the P-type diffusion layer (2) or the polysilicon layer (5) or increase the area, which has been an obstacle to high integration.

The system shown in FIG. 3 was attempted to solve the above drawbacks. In the figure, (6) is an insulation resistance film formed between the P-type diffusion layer (2) and the electrode body (4), which is made of a silicon nitride film made by atmospheric pressure chemical vapor deposition. It is something.

This atmospheric pressure chemical vapor deposition method can be applied to, for example, Si, N.

It is grown in a vapor phase by thermal decomposition or the like at a temperature of 400°C to 800°C.

The resistance characteristics of the above-mentioned structure acid act as a perfect insulating film, so the relationship shown by a in the current-voltage characteristics shown in Figure 4 is not the same, and dielectric breakdown occurs at a predetermined value, resulting in ohmic properties. Since it is not shown, it cannot be used as a resistance element.

This invention has been made in view of the above circumstances, and it is possible to create a resistor made of a conductor by connecting a resistive region to an electrode body through an insulating resistive film formed by a plasma chemical vapor deposition method. An object of the present invention is to provide a semiconductor device in which a region can be formed with a small area.

An embodiment of the present invention will be described below with reference to the drawings. In FIG. 5, (6) is an insulating resistance film made of a silicon nitride film or a silicon oxide film, which is formed between the P-type diffusion layer serving as a resistance region and the electrode body (4). It is formed by a growth method.

This plasma chemical vapor deposition method, for example,
SixNy, Hr (X, Y
, Zld (arbitrary number) is applied a strong electric MF to bring it into a plasma state, and as Si, N, and P! ! This is done by vapor phase growth on a type diffusion layer.

According to the above configuration, as shown in FIG. 4, the insulation resistance film (6) formed by atmospheric pressure chemical vapor deposition cannot be used as a resistance element, as shown by the curve a, but The silicon nitride film formed using the chemical vapor phase growth method is not a perfect insulating film and has a structure in which some current leaks, so unless a sufficiently large voltage is applied, dielectric breakdown will not occur. The relationship between voltage and current as shown by the straight line indicates Y-ohmic property. A similar relationship holds true for silicon oxide films.

Therefore, a part of the resistance value can be obtained from the insulation resistance M(6), so that the area of the diffusion layer (6) can be reduced to less than half.

Further, by changing the thickness of the insulating resistance film (6), a wide range of resistance values can be obtained. This relationship is shown in FIG. In the voltage-current characteristics shown in FIG. 6, c, d, and e indicate the silicon nitride film thicknesses of 100, 300, and 500, respectively. As is clear from this, the resistance value also increases as the film thickness increases, so it is possible to obtain a resistance value that corresponds to the film thickness.

In addition, although the above embodiment shows a single-layer wiring, the insulation resistance film (6) may be formed three-dimensionally, such as a two-layer wiring or a three-layer wiring as shown in FIG. 7, but is not limited to this. It's easy.

Further, in the above embodiments, the case where a P-type diffusion layer is used as the resistance region has been described, but the present invention can also be applied to an N-type diffusion layer or a polysilicon film, and the same effects as in the above embodiments can be obtained.

As described above, according to the present invention, it is possible to connect a resistive region made of a conductor to an electrode body through an insulating resistive film formed by a plasma chemical vapor deposition method. A semiconductor device whose area can be reduced can be provided.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a conventional semiconductor device, FIG. 2 is a sectional view showing another example of the conventional device, FIG. 3 is a sectional view showing another example of the conventional device, and FIG. 4 is a current flow diagram of the semiconductor device. - A graph showing voltage characteristics; FIG. 5 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention; FIG. 6 is a diagram showing the relationship between an insulation resistance film and current-voltage characteristics; FIG. FIG. 7 is a sectional view showing another embodiment. (2)...Resistance region (diffusion layer), (4)...Electrode body, (6)...Insulation resistance film. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Agent Makoto Kuzuno (1 other person) Figure 1 Figure 2 Figure 3 Figure 4 Voltage (V) Figure 5 Figure 6 O voltage (V) Figure 7 Procedural amendment (voluntary) Mr. Commissioner of the Japan Patent Office 1.Indication of the incident Patent application Sho 57-1459o1
No. 2, Benefits of the invention/Semiconductor device 3. Representative Hitoshi Katayama of the person making the amendment Department 4, Agent 5, "Detailed description of the invention" section of the specification to be amended and drawings. 6. Contents of amendment A9 specification: (1) Page 1, line 19; “Electrode body (14), (4) J” has been changed to “electrode body (
4)”. (2) Page 2, lines 8 to 9; Delete "or increase the area." (3) Page 2, line 14 and 1θ line 1”; “Atmospheric pressure chemical” should be corrected to “Plasma chemical 1”. (4) ft page 53, line 2 and page 4, line 8, 11~
Line 9 1”; Correct “ohmic nature” to “ohmic nature”. (55) Page 3, lines 17 to 18; r 5ix
NyHz (x, y, z are any ≠ numbers)" is replaced with "silane (SiH+), ammonia (N)13)"
. "Gas such as nitrogen (NL)" is corrected. 39 Drawing; - (1) I will resubmit Figure 4 to correct a and b in Figure 4. Above 41st flash voltage (V)

Claims (1)

[Claims] (1) A semiconductor device characterized in that a resistive region made of a conductive layer provided in a semiconductor substrate is connected to an electrode body through an insulating resistive film formed by Gwozma chemical vapor deposition method.