JPS5933453A - Resist applying device - Google Patents

Resist applying device

Info

Publication number
JPS5933453A
JPS5933453A JP14371782A JP14371782A JPS5933453A JP S5933453 A JPS5933453 A JP S5933453A JP 14371782 A JP14371782 A JP 14371782A JP 14371782 A JP14371782 A JP 14371782A JP S5933453 A JPS5933453 A JP S5933453A
Authority
JP
Japan
Prior art keywords
resist
cup
semiconductor wafer
prevent
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14371782A
Other languages
Japanese (ja)
Other versions
JPH0250614B2 (en
Inventor
Masanori Sato
正憲 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14371782A priority Critical patent/JPS5933453A/en
Publication of JPS5933453A publication Critical patent/JPS5933453A/en
Publication of JPH0250614B2 publication Critical patent/JPH0250614B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the unevenness of application, by providing a semiconductor wafer storing vessel rotatably and generating an air current between a wafer and the inside wall of the vessel to prevent a thin film of a resist from being formed. CONSTITUTION:An upper cup 21 as the semiconductor wafer storing vessel is connected on a lower cup 22 through a bearing 23 and is rotated by coupling gears 24 and 26 and a driving motor 25. Plural blades 321-3212 are attached to the inside wall of the upper part of the upper cup 21. A water 29 is held by a vacuum chuck 28 and is rotated by a motor 27, and the upper cup 21 is rotated in the same direction, and a resist liquid is discharged from a nozzle 30 to form a film; and in this case, an air curtain 34 of an air current is generated as shown in Fig. Consequently, the scattered resist strikes against the curtain 34 and is discharged downward. Thereforce, the rebound of the resist from the wall face and the formation of a resist film are prevented to prevent the unevenness of application.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体装置の製造工程のうちPEP(Pho
to Engraving Process )におい
て使用されるレジスト塗布装置に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] This invention relates to PEP (Pho) in the manufacturing process of semiconductor devices.
The present invention relates to a resist coating device used in the Engraving Process.

〔発明の技術的背景〕[Technical background of the invention]

PEP中のレジスト塗布工程は、第1図(alに示すよ
うに高温酸化性の雰囲気中でシリコンウェハ1の表面に
厚さ2000〜4000スのシリコン酸化膜2を形成し
たものを、第2図に示すようなレジスト塗布装W3を設
けたレジスト塗布架台4上の収納庫4aの内に所定枚数
−だけ収納し、これを順次レジスト塗布装置3に供給し
て、第1図(hlに示すようにシリコン酸化膜2上に厚
さ5000〜2onno ’iのレジスト膜5の形成を
行う。次いで、レジスト塗布装置3からレジストP5が
形成さ扛たシリコンウェハ1を取出して、レジスト塗布
架台4上の加熱台6上に載置し、レジスト膜5の形成の
際にシリコンウェハIに付着したキシレン等の溶剤を揮
発させる。しかる後、このシリコンウェハ1をレジスト
塗布架台4上の収納庫4c内に収納するものである。
In the resist coating process during PEP, a silicon oxide film 2 with a thickness of 2,000 to 4,000 μm is formed on the surface of a silicon wafer 1 in a high-temperature oxidizing atmosphere as shown in FIG. A predetermined number of sheets are stored in a storage 4a on a resist coating stand 4 equipped with a resist coating device W3 as shown in FIG. A resist film 5 having a thickness of 5,000 to 2 onno'i is formed on the silicon oxide film 2. Next, the silicon wafer 1 on which the resist P5 has been formed is taken out from the resist coating device 3 and placed on the resist coating stand 4. The silicon wafer 1 is placed on a heating table 6 to volatilize the solvent such as xylene that has adhered to the silicon wafer I during the formation of the resist film 5. After that, the silicon wafer 1 is placed in the storage 4c on the resist coating stand 4. It is for storage.

ところで、上記レジスト塗布装置3は、従来、第3図に
示すような構造となっている。このしシスト塗布装置は
、駆動モータ11の駆動軸11gの先端に取付けられた
真空チャック12に保持され、回転するシリコンウェハ
1上にノズル13の先端からレジスト液を吐出するもの
である。なお、14は上記シリコンウェハ1を収納する
半導体ウェハ収納容器(以下、カップと称する)である
。このカップ14の内壁部には第4図に示すように極数
の羽根15.〜15゜が −適当な角度を持たせて取付
けられている。゛この一羽根15.〜15.!は、塗布
中に飛散したレジストがカップ14の内壁部からはね返
り、・第5図に示すような固形状のレジスト16が平坦
なレジスト膜5上に乗る状態の発生を防止するためのも
のである。この場合、レジストは例えば第4図に示すよ
う番こシリコンウェハ1の回転方向(矢印Aで示す)に
沿って、a−+bに示すように進行し、Cの所で羽根1
5、によりカップ14の壁面方向にはね返される。従っ
て、飛散したレジストのシリコンウェハ1へのはね返り
を防止できるものである。
By the way, the resist coating device 3 conventionally has a structure as shown in FIG. 3. This cyst coating device is held by a vacuum chuck 12 attached to the tip of a drive shaft 11g of a drive motor 11, and discharges resist liquid from the tip of a nozzle 13 onto the rotating silicon wafer 1. Note that 14 is a semiconductor wafer storage container (hereinafter referred to as a cup) that stores the silicon wafer 1. The inner wall of this cup 14 has a number of poles of blades 15 as shown in FIG. ~15° - Installed with an appropriate angle.゛This one feather 15. ~15. ! This is to prevent the resist scattered during coating from bouncing off the inner wall of the cup 14 and the solid resist 16 from riding on the flat resist film 5 as shown in FIG. . In this case, the resist advances as shown in a-+b along the direction of rotation of the silicon wafer 1 (indicated by arrow A), for example, as shown in FIG.
5, it is rebound toward the wall surface of the cup 14. Therefore, it is possible to prevent the scattered resist from bouncing back onto the silicon wafer 1.

〔背景技術の問題点〕 従来のレジスト塗布装置では、シリコンウェハ1を高速
で回転させてレジストを塗布した場合、レジストのはね
返りはかなり防止できる。
[Problems with Background Art] In the conventional resist coating apparatus, when the silicon wafer 1 is rotated at high speed and resist is coated, it is possible to prevent the resist from rebounding to a large extent.

しかしながら、長時間(24時間連続稼動)、8速(6
000r、 p、 m、 )で使用した場合や排気量を
低下させ又は排気を停止した場合には、シリコンウェハ
1とカップ14との間に第6図に示すようなレジストの
薄膜17が形成される(なお第6図において、矢印Bは
排気方向を示す。)。・このような薄膜17が発生する
と、飛散したレジストやごみがこの薄膜17によりはね
返り、これらがシリコンウェハlに付着し、その結果レ
ジスト膜5の塗布むらが発生する。この塗布むらが発生
すると、PEP中のパターン形成が不安定になるなどシ
リコンウェハ11に悪影響を与えることになる。また、
薄膜17によりレジストのシリコンウェハ1へのはね返
りやレジスト膜5の膜厚のばらつきが発生することにな
る。
However, the long time (24 hours continuous operation), 8 speed (6
000r, p, m, ), or when the exhaust volume is reduced or the exhaust is stopped, a thin resist film 17 as shown in FIG. 6 is formed between the silicon wafer 1 and the cup 14. (In FIG. 6, arrow B indicates the exhaust direction.) - When such a thin film 17 is formed, the scattered resist and dust are repelled by this thin film 17 and adhere to the silicon wafer l, resulting in uneven coating of the resist film 5. If this uneven coating occurs, it will adversely affect the silicon wafer 11, such as making pattern formation during PEP unstable. Also,
The thin film 17 causes the resist to bounce back onto the silicon wafer 1 and causes variations in the thickness of the resist film 5.

〔発明の目的〕[Purpose of the invention]

この発明は上記実情に鑑みてなされたもので、その目的
は、塗布中のレジストのカップから半導体ウェハへのは
ね返りを防止すると共に、カップ内にできるレジストの
vf11%を無くして、レジスト膜の途布科ら及びレジ
ストIIQへのごみの付it防1トシて、l’ E P
中のパターン形成を滑らかにすることができるレジスト
塗布装置を提供ずシ)ことにある。
This invention was made in view of the above-mentioned circumstances, and its purpose is to prevent the resist from rebounding from the cup to the semiconductor wafer during coating, and to eliminate the vf11% of the resist that is formed in the cup, so that the resist film does not form in the middle. Fushina et al. and the addition of garbage to Resist IIQ.
An object of the present invention is to provide a resist coating device that can smoothly form a pattern therein.

〔発明の概要〕[Summary of the invention]

この発明は、半導体ウェハ全回転させ、当該半導体ウェ
ハ北にレジスト液を吐出させてレジスト膜を形成するレ
ジスト塗布1p置において、従来固定であった半導体ウ
ェハ収納容器を回転させることにより、前記回転中の半
導体ウェハと当該半導体ウェハ収納容器の内壁面との間
を遮る空気の流れ(エアカーテン)を形成するもので、
この空気の流れにより飛散したレジストやごみを排出さ
せるものである。
This invention enables a semiconductor wafer container to be rotated, which has conventionally been fixed, at a resist coating position of 1 p, in which a semiconductor wafer is completely rotated and a resist solution is discharged to the north of the semiconductor wafer to form a resist film. It forms an air flow (air curtain) that blocks the gap between the semiconductor wafer and the inner wall surface of the semiconductor wafer storage container.
This air flow causes the scattered resist and dust to be discharged.

〔発明の実施例〕[Embodiments of the invention]

以下、図面を参照してこの発明の一実施例を説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第7図において、21は上カップ、22は下カップであ
る。下カップ22は固定されており、この下カップ22
と上カップ21との間はベアリング23により連結され
ている。
In FIG. 7, 21 is an upper cup and 22 is a lower cup. The lower cup 22 is fixed.
and the upper cup 21 are connected by a bearing 23.

上カップ21にはその外周部全周にわたって連結歯車2
4が形成されている。この連結歯車24には、駆動モー
タ25の軸25aに取付りられた連結歯車26が噛合う
ようになっている。
The upper cup 21 has a connecting gear 2 over its entire outer circumference.
4 is formed. A connecting gear 26 attached to a shaft 25a of a drive motor 25 meshes with this connecting gear 24.

すなわち、駆動モータ25の回転が連結歯車26.24
を介して上カップ21に伝達され、これにより上カップ
21がTカップ22上を回転するもので、その回転は駆
動モータ25の回転方向及び速度を変化させることによ
り、任意に設定できるようになっている。下カップ22
の内部中央部には駆動モータ27が配置〆イ4されてお
り、この駆動モータ27の軸27aの先端部には上カッ
プ21内中央部において真空チャック28が取付けられ
ている。この真空チャック28にはシリコンウェハ29
が保持されており、このシリコンウェハ29上方にノス
ル30が配置されている。下カップ22には、上カップ
21内空間に連続して排気孔3Iが下方に向けて形成さ
れている。
That is, the rotation of the drive motor 25 is caused by the connection gears 26 and 24.
This causes the upper cup 21 to rotate on the T-cup 22, and the rotation can be set arbitrarily by changing the rotation direction and speed of the drive motor 25. ing. lower cup 22
A drive motor 27 is disposed at the center of the upper cup 21, and a vacuum chuck 28 is attached to the tip of the shaft 27a of the drive motor 27 at the center of the upper cup 21. This vacuum chuck 28 has a silicon wafer 29
is held, and a nostle 30 is placed above this silicon wafer 29. An exhaust hole 3I is formed in the lower cup 22 and extends downward into the inner space of the upper cup 21.

七カップ21の上部水平片211L及び内側壁面には、
第8図に示すように複数の羽根32.〜32□が取付け
らnている。この複数の羽根32、〜32,1はそれぞ
れ上カップ21の中心部に対して45°傾いており、か
つ第9図に示すように、上部水平片21aから下方に対
しても45°傾いている。また、上部水平片21aの羽
根321〜32.!の間には複数の吸気孔33.〜33
、tが形成されている。
On the upper horizontal piece 211L and the inner wall surface of the seventh cup 21,
As shown in FIG. 8, a plurality of blades 32. ~32□ is installed. The plurality of blades 32, - 32, 1 are each inclined at 45 degrees with respect to the center of the upper cup 21, and are also inclined at 45 degrees downward from the upper horizontal piece 21a, as shown in FIG. There is. Moreover, the blades 321 to 32 of the upper horizontal piece 21a. ! A plurality of intake holes 33. ~33
, t are formed.

このレジスト塗布装置は、駆動モータ27によりX空チ
ャック28に保持されたシリコンウェハ29を所望の速
度で回転させながら、ノズル30からレジスト液を吐出
させ、シリコンウェハ29上にレジスト膜を形成するも
のであるが〜同時に駆動モータ25により連結歯車24
゜26を介して上カップ2Iを例えばシリコンウェハ2
9の回転方向と同方向に回転させ、第7図に破線で示す
ような空気の流れ(エアカーテン34)を形成するもの
である。すなわち、上カップ21の回転により、上部水
平片21&の吸気孔、93.〜331.から流入した空
気が、下カップ22に設けられた排気孔33を通り、矢
印Cで示すように排気されろことにより、回転するシリ
コンウェハ29の周囲に空気の流れが形成されるもので
ある。このエアカーテン、74の量及び速度は一ヒカツ
プ21の回転速度を変えることにより可変できるも 従って、このレジスト塗布装置ζこおいては、シリコン
ウェハ29に塗布されず飛散したレジストは、このエア
カーテン34に突き当たり1空気の流れと共に排気孔3
1から下方に向けて排出される。これにより、従来の装
置において発生していた上カップ21の壁面からのレジ
ストのはね返りを防止できると共に、1/シストの薄膜
の発生を防止できるものである。
This resist coating device forms a resist film on the silicon wafer 29 by discharging resist liquid from a nozzle 30 while rotating the silicon wafer 29 held by the X-empty chuck 28 at a desired speed by a drive motor 27. However, at the same time, the drive motor 25 connects the connecting gear 24.
For example, attach the upper cup 2I to the silicon wafer 2 through the
9 to form an air flow (air curtain 34) as shown by the broken line in FIG. That is, due to the rotation of the upper cup 21, the intake holes of the upper horizontal piece 21&, 93. ~331. The air flowing in from the lower cup 22 passes through the exhaust hole 33 provided in the lower cup 22 and is exhausted as shown by arrow C, thereby forming an air flow around the rotating silicon wafer 29. The amount and speed of this air curtain 74 can be varied by changing the rotational speed of one hip 21. Therefore, in this resist coating device ζ, the resist that is not coated on the silicon wafer 29 and is scattered is removed by this air curtain. 34 and the exhaust hole 3 along with the flow of air.
It is discharged downward from 1. Thereby, it is possible to prevent the resist from rebounding from the wall surface of the upper cup 21, which occurs in the conventional apparatus, and also to prevent the formation of a thin film of 1/cyst.

尚、上記実施例においては、駆動モータ25の回転力を
上カップ21に伝達する手段を連結歯車24.26とし
て説明したが、これに限定するものではなく、その他例
えばベルトを用いてもよく、あるいは上カップ2Iを直
接駆動モータ25により回転さぜるようにしてもよい。
In the above embodiment, the means for transmitting the rotational force of the drive motor 25 to the upper cup 21 was explained as the connecting gears 24 and 26, but the means is not limited to this, and other means such as a belt may also be used. Alternatively, the upper cup 2I may be rotated directly by the drive motor 25.

また、このレジスト塗布装置においては、外部からごみ
等の侵入を防止するため、ベアリング23部を適度に密
閉する必要がある。さらに、上カップ21の吸気孔33
I〜33.tから流入する外気も汚れていないことが梁
丈しく、当該レジスト塗布装置をクリーン室内に設け、
ごみの量を管理する必要がある。
Furthermore, in this resist coating device, the bearing 23 needs to be appropriately sealed to prevent dust from entering from the outside. Furthermore, the intake hole 33 of the upper cup 21
I~33. It is important that the outside air flowing in from t is not contaminated, and the resist coating equipment is installed in a clean room.
It is necessary to control the amount of garbage.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、レジスト塗布中にカッ
プから半導体ウェハへのはね返りを防止できると共に、
カップ内のレジスト薄膜の発生を防止できるので、レジ
スト膜の塗布むら及びレジスト膜へのごみの付着を防止
でき、PEP中のパターン形成を滑らかにすることがで
きる。
As described above, according to the present invention, it is possible to prevent splashing from the cup onto the semiconductor wafer during resist coating, and
Since the formation of a thin resist film inside the cup can be prevented, uneven coating of the resist film and adhesion of dust to the resist film can be prevented, and pattern formation during PEP can be made smooth.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(al 、 (blはレジスト塗布工程を示す断
面図、第2図はレジスト塗布装置の全体構成を示す概略
図、第3図は従来のレジスト塗布装置の構成図、第4図
は第3図の装置における羽根の取付は状態を示す平面構
成図、第5図は第3図の装置によるレジスト塗布状態を
示す断面図、第6図は第3図の装置におけるレジストの
薄膜の発生状態を示す構成図、第7図はこの発明の一実
施例に係るレジスト塗布装置の構成図、第8図は第7図
の装置における羽根の取付は状態を示す平面構成図、第
9図は同じく側面構成図である。 21・・・上カップ、22・・・下カップ、23・・・
ベアリング、24.26・・・連結歯車、25.27・
・・駆動モータ、29・・・シリコンウェハ、30・・
・ノズル、31・・・排気孔、32.〜32、羽根、3
3、〜33.!・・・吸気孔。
Figure 1 (al, (bl) is a sectional view showing the resist coating process, Figure 2 is a schematic diagram showing the overall configuration of a resist coating device, Figure 3 is a configuration diagram of a conventional resist coating device, and Figure 4 is a schematic diagram showing the overall configuration of a resist coating device. FIG. 5 is a cross-sectional view showing the state of resist application by the device shown in FIG. 3. FIG. 6 is a plan view showing how the blades are installed in the device shown in FIG. 3. FIG. FIG. 7 is a configuration diagram of a resist coating device according to an embodiment of the present invention, FIG. 8 is a plan configuration diagram showing how the blades are installed in the device of FIG. 7, and FIG. It is a side configuration diagram. 21... Upper cup, 22... Lower cup, 23...
Bearing, 24.26...Connection gear, 25.27.
...Drive motor, 29...Silicon wafer, 30...
- Nozzle, 31...Exhaust hole, 32. ~32, feather, 3
3, ~33. ! ...Intake hole.

Claims (1)

【特許請求の範囲】[Claims] 半導体ウエハ収納容器と、この半導体ウエハ収納容器内
において半導体ウェハを保持し、当該半導体ウェハを所
定の速度で回転させる手段と、前記半導体ウェハ上にレ
ジスト液を吐出させレジスト膜を形成する手段と、前記
半導体ウェハ収納容器を所定の速度で回転させ、前記回
転中の半導体ウェハと前記半導体ウェハ収納容器の内壁
面との間を遮る空気の流れを形成する手段と、前記空気
の流れを排出する手段とを具備したことを特徴とするレ
ジスト塗布装置。
a semiconductor wafer storage container, a means for holding a semiconductor wafer in the semiconductor wafer storage container and rotating the semiconductor wafer at a predetermined speed, and a means for discharging a resist solution onto the semiconductor wafer to form a resist film; means for rotating the semiconductor wafer storage container at a predetermined speed to form an air flow that interrupts the rotating semiconductor wafer and an inner wall surface of the semiconductor wafer storage container; and means for discharging the air flow. A resist coating device characterized by comprising:
JP14371782A 1982-08-19 1982-08-19 Resist applying device Granted JPS5933453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14371782A JPS5933453A (en) 1982-08-19 1982-08-19 Resist applying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14371782A JPS5933453A (en) 1982-08-19 1982-08-19 Resist applying device

Publications (2)

Publication Number Publication Date
JPS5933453A true JPS5933453A (en) 1984-02-23
JPH0250614B2 JPH0250614B2 (en) 1990-11-02

Family

ID=15345344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14371782A Granted JPS5933453A (en) 1982-08-19 1982-08-19 Resist applying device

Country Status (1)

Country Link
JP (1) JPS5933453A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07195023A (en) * 1995-01-30 1995-08-01 Tokyo Electron Ltd Coating device
JPH07195024A (en) * 1995-01-30 1995-08-01 Tokyo Electron Ltd Coating method and device therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412670A (en) * 1977-06-30 1979-01-30 Matsushita Electric Ind Co Ltd Viscous agnent coating device
JPS54158568U (en) * 1978-04-26 1979-11-05
JPS5787862A (en) * 1980-11-19 1982-06-01 Toshiba Corp Rotary coating device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412670A (en) * 1977-06-30 1979-01-30 Matsushita Electric Ind Co Ltd Viscous agnent coating device
JPS54158568U (en) * 1978-04-26 1979-11-05
JPS5787862A (en) * 1980-11-19 1982-06-01 Toshiba Corp Rotary coating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07195023A (en) * 1995-01-30 1995-08-01 Tokyo Electron Ltd Coating device
JPH07195024A (en) * 1995-01-30 1995-08-01 Tokyo Electron Ltd Coating method and device therefor

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JPH0250614B2 (en) 1990-11-02

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