JPS5931054A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS5931054A
JPS5931054A JP57139931A JP13993182A JPS5931054A JP S5931054 A JPS5931054 A JP S5931054A JP 57139931 A JP57139931 A JP 57139931A JP 13993182 A JP13993182 A JP 13993182A JP S5931054 A JPS5931054 A JP S5931054A
Authority
JP
Japan
Prior art keywords
layer
integrated circuit
conductivity type
region
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57139931A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0425709B2 (enrdf_load_stackoverflow
Inventor
Tomoyuki Watabe
知行 渡部
Takahiro Okabe
岡部　隆博
Sadao Ogura
小倉　節生
Akira Muramatsu
彰 村松
Masataka Ota
大田　正孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57139931A priority Critical patent/JPS5931054A/ja
Publication of JPS5931054A publication Critical patent/JPS5931054A/ja
Publication of JPH0425709B2 publication Critical patent/JPH0425709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57139931A 1982-08-13 1982-08-13 半導体集積回路装置 Granted JPS5931054A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57139931A JPS5931054A (ja) 1982-08-13 1982-08-13 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57139931A JPS5931054A (ja) 1982-08-13 1982-08-13 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5931054A true JPS5931054A (ja) 1984-02-18
JPH0425709B2 JPH0425709B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=15256996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57139931A Granted JPS5931054A (ja) 1982-08-13 1982-08-13 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5931054A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957705A (en) * 1986-11-10 1990-09-18 Japan Electronic Control Systems Co., Ltd. Oxygen gas concentration-detecting apparatus
JP2005317662A (ja) * 2004-04-27 2005-11-10 Denso Corp 半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957705A (en) * 1986-11-10 1990-09-18 Japan Electronic Control Systems Co., Ltd. Oxygen gas concentration-detecting apparatus
JP2005317662A (ja) * 2004-04-27 2005-11-10 Denso Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0425709B2 (enrdf_load_stackoverflow) 1992-05-01

Similar Documents

Publication Publication Date Title
US4862240A (en) Complementary semiconductor device
US4826780A (en) Method of making bipolar transistors
US6365447B1 (en) High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth
US5089429A (en) Self-aligned emitter bicmos process
JPH0123949B2 (enrdf_load_stackoverflow)
US4404738A (en) Method of fabricating an I2 L element and a linear transistor on one chip
USRE34158E (en) Complementary semiconductor device
KR970000425B1 (ko) BiCMOS형 전계효과 트랜지스터 및 그의 제조방법
CN101635298B (zh) 平面工艺的三维集成电路
Rodgers et al. Epitaxial V-groove bipolar integrated circuit process
JP3126766B2 (ja) 半導体装置およびその製造方法
JPS5931054A (ja) 半導体集積回路装置
US5567978A (en) High voltage, junction isolation semiconductor device having dual conductivity tape buried regions and its process of manufacture
JPS6161540B2 (enrdf_load_stackoverflow)
CN100409451C (zh) 一种双极型晶体管及应用它的半导体装置
JP3443069B2 (ja) 半導体装置の製造方法
US5481130A (en) Semiconductor IIL device with dielectric and diffusion isolation
JPH01164062A (ja) 半導体装置の製造方法
JPS59130458A (ja) 半導体集積回路
JPS6031107B2 (ja) 半導体集積回路装置
JPH02170571A (ja) 半導体装置とその製造方法
JPH0613561A (ja) 半導体装置及び半導体装置の製造方法
JPS6018931A (ja) 半導体装置とその使用方法
JPS60109274A (ja) 半導体集積回路装置とその製造法
JPH0258367A (ja) 半導体装置