JPH0425709B2 - - Google Patents

Info

Publication number
JPH0425709B2
JPH0425709B2 JP57139931A JP13993182A JPH0425709B2 JP H0425709 B2 JPH0425709 B2 JP H0425709B2 JP 57139931 A JP57139931 A JP 57139931A JP 13993182 A JP13993182 A JP 13993182A JP H0425709 B2 JPH0425709 B2 JP H0425709B2
Authority
JP
Japan
Prior art keywords
region
type
injector
emitter
logic elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57139931A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5931054A (ja
Inventor
Tomoyuki Watabe
Takahiro Okabe
Sadao Ogura
Akira Muramatsu
Masataka Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57139931A priority Critical patent/JPS5931054A/ja
Publication of JPS5931054A publication Critical patent/JPS5931054A/ja
Publication of JPH0425709B2 publication Critical patent/JPH0425709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57139931A 1982-08-13 1982-08-13 半導体集積回路装置 Granted JPS5931054A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57139931A JPS5931054A (ja) 1982-08-13 1982-08-13 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57139931A JPS5931054A (ja) 1982-08-13 1982-08-13 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5931054A JPS5931054A (ja) 1984-02-18
JPH0425709B2 true JPH0425709B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=15256996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57139931A Granted JPS5931054A (ja) 1982-08-13 1982-08-13 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5931054A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957705A (en) * 1986-11-10 1990-09-18 Japan Electronic Control Systems Co., Ltd. Oxygen gas concentration-detecting apparatus
JP4815754B2 (ja) * 2004-04-27 2011-11-16 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
JPS5931054A (ja) 1984-02-18

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