JPS5925232A - Bonding device - Google Patents
Bonding deviceInfo
- Publication number
- JPS5925232A JPS5925232A JP57132971A JP13297182A JPS5925232A JP S5925232 A JPS5925232 A JP S5925232A JP 57132971 A JP57132971 A JP 57132971A JP 13297182 A JP13297182 A JP 13297182A JP S5925232 A JPS5925232 A JP S5925232A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- cover
- lead frame
- shielding plate
- bodding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
本発明は酸化し易い銅又は銅（こニッケル、銀、銅等の
メッキを施したり−ドフンームに連続して複数個のダイ
ポツプインク又はワイヤボッディングを行うボンディン
グ装置に関する。
従来、リードフレームの酸化を防止するには、例えば特
公昭５３−９８３８号公報に示すような加熱装置が用い
られている。即ぢ、リードフレームを加熱する加熱体を
カバーで覆い、カロ熱体とカバーとの間に窒素ガス等の
不活性ガスを流し、カバーに形成された開口部を通して
グイボンディング又はワイヤボッディングを行ってリー
ドフレームの酸化防止を図っている。
ところで一般に、ボンディング装置は、リードフレーム
ｌこ形成された複数のトランジスタ部（デバイス部とも
いう）σ月つのトランジスタ部ｃこついてグイボッディ
ング又はライ−１１ボンデイノグを行い、その後リード
フレームを１ピッチ送って次の１つのトランジスタ部に
ついてグイボッディング又はワイヤボッディングを行う
ようζこなっている。
このように１つのトランジスタ部についてボンディング
を行ってリードフレームをピッチ送りするボンディング
方法においては、前記加熱装置のカバーの開口部の大き
さは、ボッディング作業に必要な小さな開口部でよい。
しかしながら、このボンディング方法は１トランジスタ
部のボンディングが完了する毎にリードフレームを間欠
送りするため作業効率が悪いという欠点があった。
そこで最近、複数分のトランジスタ部（例えば１０トラ
ンジスタ分）のボンディングを連続して行い、その後リ
ードフレームを１０トランジスタ分一度に送るというボ
ンディング方法が行イつれている。
このことをワイヤボンディングを行う場合について第１
図により説明する。ダイ２０が等間隔に貼付けられたリ
ードフレーム２１がワイヤボンディング装置のボンディ
ング部に送られて位置決めされると、ワイヤボンディン
グ装置のボンディングツールｌこよって、まずトランジ
スタ部ＩＩこついてダイ２０のパッドとリードフレーム
２１のり一ドにワイヤ２２が接続される。次にボッディ
ングツールはトランジスタ部２（・こ移動し、このトラ
ンジスタ部について同様にワイヤ２２が接続される。
この動作を順次行い、１〜ラノジスク部１０（・こつい
てワイヤ２２の接続が完了すると、ボンディングツール
はスタート点ζこ戻り、また同時にリードフレーム２１
は１０トランジスタ分一度に送られる。
以後、前記動作を繰返して順次ボンディングを行う。
しかしながら、このよう（こ１０トランジスタ分を一度
にボンディングするには、前記カバーの開口部の大きさ
をボンディング作票に支障がないよう（こ１０トランジ
スタ分連続した大きな開口部に形成しなければならない
。このように開１コ部が大１きくなり、この開口部から
多量の不活性ガスが流れ出てしまうと同時に空気もカバ
ー内部（こ進入し十分な酸化防ｄ−が図れないという欠
点があった。
また第１番目のトランジスタ部をボッディングしてから
最後の第１０番目のトランジスタをボンディングするま
での時間内に最後の方のトランジスタの酸化が進行して
ボンダビリティのバラツキが大きくなるという欠点があ
った。
本発明は、複数個のトランジスタ部を連続してボンディ
ングを行っても十分The present invention relates to a bonding apparatus for plating copper or copper (nickel, silver, copper, etc.) that is easily oxidized, or for performing continuous die-pop ink or wire bonding on a bond. Conventionally, oxidation of lead frames is prevented. To do this, for example, a heating device as shown in Japanese Patent Publication No. 53-9838 is used.The heating element that heats the lead frame is covered with a cover, and nitrogen gas is inserted between the heating element and the cover. In order to prevent oxidation of the lead frame, bonding or wire bonding is performed through an opening formed in the cover by flowing an inert gas such as Transistor part (also called device part) σ Monthly transistor part c is stuck and wire bodding or wire bodding is performed, then the lead frame is sent one pitch and the next one transistor part is wire bodding or wire bodding. In this bonding method in which one transistor section is bonded and the lead frame is pitch-fed, the size of the opening in the cover of the heating device is determined by the size necessary for the bonding work. A small opening is sufficient. However, this bonding method has the disadvantage of poor work efficiency as the lead frame is intermittently fed each time bonding of one transistor section is completed.Therefore, recently, bonding methods have been developed to reduce work efficiency by feeding the lead frame intermittently each time bonding of one transistor section is completed. The conventional bonding method is to perform bonding for 10 transistors in succession, and then send the lead frame for 10 transistors at once.
This will be explained using figures. When the lead frame 21 with the die 20 pasted at equal intervals is sent to the bonding section of the wire bonding machine and positioned, the bonding tool of the wire bonding machine first sticks to the transistor section II and connects the pads and leads of the die 20. A wire 22 is connected to the frame 21 glue. Next, the bodding tool moves to the transistor part 2 (), and the wire 22 is connected to this transistor part in the same way. This operation is performed sequentially, and when the wire 22 is connected to the , the bonding tool returns to the starting point ζ, and at the same time the lead frame 21
is sent to 10 transistors at once. Thereafter, the above operations are repeated to sequentially perform bonding. However, in order to bond 10 transistors at once, the size of the opening in the cover must be set to a large continuous opening for 10 transistors so that it does not interfere with the bonding process. In this way, the opening becomes larger by 1, and a large amount of inert gas flows out from this opening, and at the same time air also enters the inside of the cover, which has the disadvantage that sufficient oxidation prevention cannot be achieved. Another disadvantage is that oxidation of the last transistor progresses during the time from bonding the first transistor section to bonding the tenth and final transistor, resulting in large variations in bondability. In the present invention, bonding of multiple transistor parts in succession is sufficient.
【こり一ドフＶ−ムの酸化を防止す
ることができ、また最初にボッディングするものす最後
（こボンディングするものの時間差による酸化進行のバ
ラツキがないポンディフグ装置を提供することを目的と
する。
以下、本発明を図示の実施例により説明する。
第２図は本発明（こなるボッディフグ装置の一実施例を
示し、（ａｊは平面図、（１〕）は正面図、？ｉｒ、３
図は第２図（ａ）の３−３線断面図、第４図は第２図（
ａ）の４−４線断面拡大図である。第２図、第３図に示
すようにカートリッジヒータ３０を内蔵した加熱体３】
は加熱体保持台３２に固定されている。前記加熱体３１
の上面にはリードフレーム２１をガイド”するガイド溝
３１ａが形成され、このガイド溝３１３を覆うように加
熱体３１にはカバー３３が固定されている。また加熱体
３１（こは窒素ガス等の不活性ガスを流すための孔３１
１〕かガイド’１１７１３１ａと平行に形成され、この
孔３１１〕はガイド溝３１ａに孔３１ ｃｉこよって連
通されている。前記カバー３３１こは第４図に示ずよう
Ｉこ一度ζこボンディングされる１０トランジスタ分に
対応する長さの開口部３３ａが形成されている。
前記加熱体３１の側方には、第２図に示すようにボンデ
ィングヘッド４０が配設されている。ボンディングヘッ
ド４０ｉこは一端（こボッディングツール４１が固定さ
れたボンディングアーム４２が図示しない上下駆動手段
で」１下させられるよう（こ設けられている。またボン
デインクヘッド４０にはテレビカメラ支持アーム４３が
固定されており、このテレビカメラ支持アーム４３１こ
は前記ボンディングツール４１より２ピツチ（２トラン
ジスタ分）離れて配設されたテレビカメラ４４が固定さ
れている。前記ボンディングヘッド４０は、ＸＹテーブ
ル４５のＹテーブル４６ＪＪこ固定されている。ＸＹテ
ーブル４５は、Ｘ方向（こ駆動されるＸテーブル４７お
、このＸテーブルイア１に載置されＹ方向に駆動される
前記Ｙテーブル４６とからなる周知構造で、Ｘテーブル
４７がＸ方向（こ駆動されるとＹテーブル４６も一緒に
Ｘ方向に駆動され、Ｙテーブル４６がＹ方向に駆動され
るとＹテーブル４６のみがＹ方向に移動する。即ち、Ｙ
テーブル４ＧはＸＹ方向に移動させられるように構成さ
れている。
前記Ｘテーブル４７には前記加熱体３１の上方に伸びた
遮蔽板保持アーム５０が固定されている。
遮蔽板保持アーム５０の端部には２本のピン５１．５１
が固定されており、このピン５１．５１に遮蔽板５２の
一端が軽く保持されている。従って、遮蔽板５２はＸテ
ーブル４７と共に移動する。前記遮蔽板５２は前記カバ
ー３３の上面に当接するように配設され、第４図（こ示
すようにＸＹテーブル４５がボッディングのために１０
トランジスタ分移動してもカバー３３の開口部３３ａを
十分覆う大きさくこ形成されている。また遮蔽板５２に
は、第４図、第５図に示すよう（こ、ボッディングツー
ル４１に対応した部分をこ１トランジスタ分のボンディ
ング作業に必要な最小限のボンディング作業窓５２ ａ
と、テレビカメラ４４に対応した部分の検出に必要な最
小限の検出窓５２ ｂとが形成されている。また遮蔽板
５２ｆこけ、第２図（こ示ずように、Ｘ方向に伸びた長
穴５２ｃが形成されており、この長穴５２ｃＩこリード
フレーム２１をポンディ／′グ時にクラップするための
押え板５３が挿入されている。押え板５３は図示しない
上下動機構で上下動されるようｔこなっており、前記の
如く押え板５３が長穴５２ｃに挿入されていること（こ
よって遮蔽板５２の回り止めも兼ている。
次にかかる構成よりなるボッディング装置の作動につい
て説明する。前記の如く、遮蔽板５２はＸＹテーブル４
５がＸ方向に移動すると一緒に移動するので、遮蔽板５
２のボンディング作業窓５２ａはボンディングツール４
１のＪＣ下に、検出窓５２１）はテレビカメラ４４のＪ
（下に常に一位置した状態にある。
まず、リードフレーム２１が加熱体３１のガイド溝３１
ａに沿ってトランジスタ部１がテレビカメラ４４の真下
に位置するようｌこ送られる。次ζこ押え板５３が第３
図（ａ）の状態より同図（］〕）のよう（こ下り、リー
ドフレーム２１を加熱体３１に押伺ける。そして、テレ
ビカメラ４４によってトランジスタ部１のパターンが検
出窓５２ｂを通して検出され、図示しない記憶装置に一
時記憶される。次にＸＹテーブル４５がＸ方向に１ピッ
チ移動される。これによりテレビカメラ４４、ボッディ
ングツール４１及び遮蔽板５２も１ピツチ移動させられ
、テレビカメラ４４は第２番目のトランジスタ部２の上
方ζこ位置する。そして、前記と同様にしてトランジス
タ部２が検出されて記憶される。そして再びＸＹテーブ
ル４５がＸ方向（こ１ピツチ移動さぜられると、テレビ
カメラ４４はトランジスタ部３の上方（こ、ボンディン
グツーｌし４！はトランジスタ部１の上方（こそれぞれ
位置する。そして、ボッディングツール４１は前記トラ
ンジスタ部１の記憶データに従ってＸＹテーブル４５が
駆動されて移動し、ボンディング作業窓５２ａを通して
第１図に示すようにトランジスタ部ＩＩこワイヤ２２が
ボッディングされる。また同時（こテレビカメラ４４に
よってトランジスタ部３の検出が行われる。
このような動作を順次繰返して第１０番目のトランジス
タ部１０のボンディング作業が完了する゛と、ＸＹテー
ブル４５が駆動され、ボンデインクツール４１及びテレ
ビカメラ４４は元のスクート位置（こ戻される。また同
時に押え板５３は十列し、リードフレーム２１は図示し
ない搬送手段で１０トランジスタ部分（１０ピツチ）送
られる。これにより、ボッディングの１サイクルが完了
する。
以後、前記動作を繰返して順次ボンディングが行われる
。
従来は加熱体３１に固定されたカバー３３に形成された
開口部３３ａを通してボンディングツール４１１こより
ボッディングが行われたが、本発明は前記カバー３３の
開口部３３ａを覆うように遮蔽板５２を設け、しかもこ
の遮蔽板５２はＸＹテーブル４５と連動するように設け
てなるので、遮蔽板５２に形成されるボンディング作業
窓５２ａは１つのトランジスタ部のボンディング作業に
必要な最小限の大きさでよい。このため、力／＜−３３
の内部から流出する不活性ガス及びカバー３３の内部に
進入する空気は最小に抑えられ、十分にリードフレーム
２１の酸化が防止される。また第１番目にボンディング
するトランジスタ部１と最後にボンディングするトラン
ジスタ部１０のボッディング作業窓５２ａ下にある時間
を同じにできるため、均一な酸化防止ができ、ボノダビ
リテイもほぼ同一になり、製品の信頼性が向上する。
なお、上記実施例においては、ｊへ蔽板５２をＸテーブ
ル４７に取付けたが、Ｙテーブル４Ｇｊこ取付けても、
またはボッディングヘッド４０に取付けてもよい。また
上記実施例（こおいては、テレビカメラ４４の検出結果
に基いてポンディソゲツール４１によりボンディングす
る場合（こεいてす、ｆＪ３したが、特（こ検出を行４
つないでボンディングをする場合は、検出窓５２ｂを形
成する必要がないことはいうまでもない。また本発明は
ワイヤボンディングに限らず、リードフレーム２１にダ
イ２０をボンディングするグイホンディノブにも適用で
きる。この場合、ボンデ／フグツール４１は真空装置で
ダイ２０を吸着するように構成しなければならないこと
はいうまでもない。
以上の説明から明らかな如く、本発明（こよれば、カバ
ー内部からの不活性ガスの流出及びカバー内部への空気
の進入を十分【こ抑えることができる。
また最初にボッディングするものと最後にボッディング
するものの時間差に、よる酸化進行のバラツキがなく、
製品の信頼性が向上する０[The purpose of the present invention is to provide a pumping device which can prevent oxidation of the first bonding film and which does not cause variations in the progress of oxidation due to the time difference between the first bonding and the last bonding. The present invention will be explained with reference to the illustrated embodiments. Fig. 2 shows an embodiment of the body blowfish device according to the present invention, (aj is a plan view, (1) is a front view, ?ir, 3
The figure is a cross-sectional view taken along the line 3-3 of Figure 2 (a), and Figure 4 is a cross-sectional view of Figure 2 (a).
It is a 4-4 line cross-sectional enlarged view of a). Heating body 3 with a built-in cartridge heater 30 as shown in FIGS. 2 and 3]
is fixed to the heating element holder 32. The heating body 31
A guide groove 31a for guiding the lead frame 21 is formed on the upper surface, and a cover 33 is fixed to the heating element 31 so as to cover the guide groove 313. Hole 31 for flowing inert gas
1] is formed parallel to the guide '117131a, and this hole 311] communicates with the guide groove 31a through the hole 31ci. The cover 331 has an opening 33a having a length corresponding to ten transistors to be bonded as shown in FIG. A bonding head 40 is disposed on the side of the heating body 31, as shown in FIG. The bonding head 40i is provided at one end so that a bonding arm 42 to which a bonding tool 41 is fixed can be lowered by a vertical drive means (not shown). 43 is fixed, and a television camera 44, which is disposed two pitches (two transistors) apart from the bonding tool 41, is fixed to this television camera support arm 431.The bonding head 40 is mounted on an XY table. The Y table 46JJ of 45 is fixed.The XY table 45 consists of an With the well-known structure, when the X table 47 is driven in the X direction, the Y table 46 is also driven in the X direction, and when the Y table 46 is driven in the Y direction, only the Y table 46 moves in the Y direction. That is, Y
The table 4G is configured to be moved in the X and Y directions. A shield plate holding arm 50 extending above the heating body 31 is fixed to the X table 47. Two pins 51 and 51 are attached to the end of the shield plate holding arm 50.
is fixed, and one end of the shielding plate 52 is lightly held by this pin 51.51. Therefore, the shielding plate 52 moves together with the X table 47. The shielding plate 52 is disposed so as to be in contact with the upper surface of the cover 33, and as shown in FIG.
The hole is formed to be large enough to cover the opening 33a of the cover 33 even if it moves by the amount of the transistor. In addition, as shown in FIGS. 4 and 5, the shielding plate 52 has a minimum bonding work window 52 a that corresponds to the bonding tool 41 and is required for bonding work for one transistor.
, and a minimum detection window 52b necessary for detecting the portion corresponding to the television camera 44. In addition, the shielding plate 52f is moved, and as shown in FIG. 2, an elongated hole 52c extending in the X direction is formed. 53 is inserted.The presser plate 53 is configured to be moved up and down by a vertical movement mechanism (not shown), and as described above, the presser plate 53 is inserted into the elongated hole 52c (thereby, the shielding plate 52 Next, the operation of the bodding device having such a configuration will be explained.As mentioned above, the shielding plate 52 is connected to the XY table 4.
5 moves in the X direction, so the shielding plate 5
The bonding work window 52a of No. 2 is the bonding tool 4.
The detection window 521) is located below the J of the TV camera 44.
(It is always in one position below.) First, the lead frame 21 is inserted into the guide groove 31 of the heating element 31.
The transistor unit 1 is moved along the line a so that it is positioned directly below the television camera 44. The next ζ presser plate 53 is
The lead frame 21 is pushed against the heating element 31 as shown in the figure (]) from the state shown in FIG. It is temporarily stored in a storage device (not shown).Next, the XY table 45 is moved one pitch in the X direction.As a result, the television camera 44, bodding tool 41, and shielding plate 52 are also moved one pitch, and the television camera 44 is moved one pitch. The transistor section 2 is located ζ above the second transistor section 2.Then, the transistor section 2 is detected and stored in the same manner as described above.Then, when the XY table 45 is moved again in the X direction (by one pitch), The television camera 44 is located above the transistor section 3 (here, the bonding tool 4! is located above the transistor section 1). The wire 22 of the transistor section II is bonded through the bonding work window 52a as shown in FIG. 1. At the same time, the transistor section 3 is detected by the television camera 44. When the bonding work for the 10th transistor section 10 is completed by repeating the process in sequence, the XY table 45 is driven, and the bonding tool 41 and television camera 44 are returned to their original scooting positions. They are arranged in ten rows, and the lead frame 21 is transported by ten transistors (10 pitches) by a transport means (not shown).This completes one cycle of bonding.Then, the above operation is repeated to perform bonding in sequence.Conventionally, heating is used. Bonding was performed using a bonding tool 411 through an opening 33a formed in a cover 33 fixed to the body 31. However, in the present invention, a shielding plate 52 is provided to cover the opening 33a of the cover 33, and this shielding Since the plate 52 is provided so as to be interlocked with the XY table 45, the bonding work window 52a formed in the shielding plate 52 may have the minimum size necessary for the bonding work of one transistor section. /<-33
The inert gas flowing out from inside the cover 33 and the air entering the inside of the cover 33 are suppressed to a minimum, and oxidation of the lead frame 21 is sufficiently prevented. In addition, since the time under the boding window 52a of the transistor section 1 to be bonded first and the transistor section 10 to be bonded last can be made the same, oxidation can be uniformly prevented, bondability is almost the same, and product reliability is achieved. Improves sex. In addition, in the above embodiment, the j-shield plate 52 is attached to the X-table 47, but even if the Y-table 4Gj is attached,
Alternatively, it may be attached to the bodding head 40. In addition, in the above embodiment (in this case, bonding is performed using the Pondisoge tool 41 based on the detection result of the television camera 44 (here, fJ3 is used), but this detection is performed in
Needless to say, in the case of connecting and bonding, it is not necessary to form the detection window 52b. Further, the present invention is not limited to wire bonding, but can also be applied to a guihondinobu in which the die 20 is bonded to the lead frame 21. In this case, it goes without saying that the bonding/puffer tool 41 must be configured to attract the die 20 using a vacuum device. As is clear from the above description, according to the present invention, it is possible to sufficiently suppress the outflow of inert gas from inside the cover and the intrusion of air into the inside of the cover. There is no variation in the progress of oxidation due to the time difference of what is bodding,
Improves product reliability0
第１図はワイヤボンディングされたリードフレームの平
面図、第２図は本発明になるボンデインは第２図（ｄ）
の４−４線断面拡大図、第５図は遮蔽板の部分平面図で
ある。
２】・・・リードフレーム、 ３１・・・加熱体、
３３・・・カバー、 ３３ａ・・・開［」部、 ４
０・・・ボッディングヘッド、 ４１・・・ボッデ
ィングツール、 ４２・・・ボンディングアーム、
４５・・・ＸＹテーブル、 ５０・・・遮蔽板保持
アーム、５１・・・ピン、 ５２・・・遮蔽板、
５２ａ・・・ボッディング作業窓。
第１図
第３図
（０）
（ｂ）
（Ｇ）
５
（ｂ）Fig. 1 is a plan view of a wire-bonded lead frame, and Fig. 2 shows the bonding according to the present invention as shown in Fig. 2(d).
FIG. 5 is an enlarged cross-sectional view taken along the line 4-4, and FIG. 5 is a partial plan view of the shielding plate. 2]... Lead frame, 31... Heating body,
33...Cover, 33a...Open part, 4
0...Bodding head, 41...Bodding tool, 42...Bonding arm,
45... XY table, 50... Shield plate holding arm, 51... Pin, 52... Shield plate,
52a...Bodding work window. Figure 1 Figure 3 (0) (b) (G) 5 (b)
Claims (1)
上面を覆うように加熱体に固定されたカバーと、前記加
熱体の側方ζこ設けられＸ’Ｙ方向（こ駆動されるＸＹ
テーブルと、このＸＹテーブル上に固定されたボッディ
ングヘッドと、このボッディングヘッドに上下動可能に
設けられ一端にボッディングツールを有するボンディン
グアームとを備え、前記加熱体と前記カバーとの間に不
活性ガスを送り、前記カバー（こ形成された開口部を通
して前記ボッディングツールによって前記リードフレー
ムにダイボンディング又はワイヤボッディングを行うボ
ンディング装置において、前記カバーの開口部を覆いか
つボッディング作業ｌと必贋な最小限のボンディング作
業窓が形成された遮蔽板を前記ＸＹテーブルと連動する
ようｌこ設けてなるボンディング装置。A heating element on which a lead frame is placed, a cover fixed to the heating element so as to cover the upper surface of the heating element, and a cover provided on the side of the heating element in the X'Y direction (XY direction to be driven)
A table, a bodding head fixed on the XY table, and a bonding arm that is movable up and down on the boding head and has a bodding tool at one end, and is provided between the heating body and the cover. In a bonding apparatus that sends an inert gas and performs die bonding or wire bonding to the lead frame with the bodding tool through the opening formed in the cover, the opening of the cover is covered and necessary for the boding operation l. A bonding apparatus comprising: a shielding plate having a minimum false bonding work window formed thereon so as to be interlocked with the XY table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57132971A JPS5925232A (en) | 1982-07-31 | 1982-07-31 | Bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57132971A JPS5925232A (en) | 1982-07-31 | 1982-07-31 | Bonding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5925232A true JPS5925232A (en) | 1984-02-09 |
| JPH0213816B2 JPH0213816B2 (en) | 1990-04-05 |
Family
ID=15093772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57132971A Granted JPS5925232A (en) | 1982-07-31 | 1982-07-31 | Bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5925232A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63314837A (en) * | 1987-06-18 | 1988-12-22 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
| JPH01251728A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Wire bonding apparatus |
| WO2003012833A3 (en) * | 2001-08-01 | 2004-03-04 | Li Logix Inc D B A Rd Automati | Process and apparatus for mounting semiconductor components to substrates and parts therefor |
| US7578423B1 (en) | 2008-06-06 | 2009-08-25 | Asm Technology Singapore Pte Ltd. | Assembly for reducing oxidation of semiconductor devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681945A (en) * | 1979-12-07 | 1981-07-04 | Hitachi Ltd | Assembling device |
| JPS56161340U (en) * | 1980-04-28 | 1981-12-01 |
-
1982
- 1982-07-31 JP JP57132971A patent/JPS5925232A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681945A (en) * | 1979-12-07 | 1981-07-04 | Hitachi Ltd | Assembling device |
| JPS56161340U (en) * | 1980-04-28 | 1981-12-01 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63314837A (en) * | 1987-06-18 | 1988-12-22 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
| JPH01251728A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Wire bonding apparatus |
| WO2003012833A3 (en) * | 2001-08-01 | 2004-03-04 | Li Logix Inc D B A Rd Automati | Process and apparatus for mounting semiconductor components to substrates and parts therefor |
| US6818543B2 (en) | 2001-08-01 | 2004-11-16 | Lilogix, Inc. | Process and apparatus for mounting semiconductor components to substrates and parts therefor |
| US7578423B1 (en) | 2008-06-06 | 2009-08-25 | Asm Technology Singapore Pte Ltd. | Assembly for reducing oxidation of semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0213816B2 (en) | 1990-04-05 |
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