JPS5925216A - 化合物半導体の熱変形防止方法 - Google Patents

化合物半導体の熱変形防止方法

Info

Publication number
JPS5925216A
JPS5925216A JP13476782A JP13476782A JPS5925216A JP S5925216 A JPS5925216 A JP S5925216A JP 13476782 A JP13476782 A JP 13476782A JP 13476782 A JP13476782 A JP 13476782A JP S5925216 A JPS5925216 A JP S5925216A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor substrate
thermal deformation
inp
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13476782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136689B2 (enrdf_load_stackoverflow
Inventor
Junichi Kinoshita
順一 木下
Hajime Okuda
肇 奥田
Yutaka Uematsu
豊 植松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP13476782A priority Critical patent/JPS5925216A/ja
Publication of JPS5925216A publication Critical patent/JPS5925216A/ja
Publication of JPH0136689B2 publication Critical patent/JPH0136689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP13476782A 1982-08-03 1982-08-03 化合物半導体の熱変形防止方法 Granted JPS5925216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13476782A JPS5925216A (ja) 1982-08-03 1982-08-03 化合物半導体の熱変形防止方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13476782A JPS5925216A (ja) 1982-08-03 1982-08-03 化合物半導体の熱変形防止方法

Publications (2)

Publication Number Publication Date
JPS5925216A true JPS5925216A (ja) 1984-02-09
JPH0136689B2 JPH0136689B2 (enrdf_load_stackoverflow) 1989-08-02

Family

ID=15136082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13476782A Granted JPS5925216A (ja) 1982-08-03 1982-08-03 化合物半導体の熱変形防止方法

Country Status (1)

Country Link
JP (1) JPS5925216A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234783A (en) * 1991-12-16 1993-08-10 Eastman Kodak Company Method of selectively glossing toner images
US5260753A (en) * 1990-11-14 1993-11-09 Konica Corporation Color image forming method
KR20140085560A (ko) * 2011-10-27 2014-07-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 가열 처리를 통한 표면 평활화 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110271A (enrdf_load_stackoverflow) * 1973-02-21 1974-10-21
JPS5513909U (enrdf_load_stackoverflow) * 1978-07-07 1980-01-29

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110271A (enrdf_load_stackoverflow) * 1973-02-21 1974-10-21
JPS5513909U (enrdf_load_stackoverflow) * 1978-07-07 1980-01-29

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260753A (en) * 1990-11-14 1993-11-09 Konica Corporation Color image forming method
US5234783A (en) * 1991-12-16 1993-08-10 Eastman Kodak Company Method of selectively glossing toner images
KR20140085560A (ko) * 2011-10-27 2014-07-07 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 가열 처리를 통한 표면 평활화 방법
JP2014535171A (ja) * 2011-10-27 2014-12-25 コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓａｌｔｅｒｎａｔｉｖｅｓ 熱処理によって表面を平滑化するプロセス

Also Published As

Publication number Publication date
JPH0136689B2 (enrdf_load_stackoverflow) 1989-08-02

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