JPS592362A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS592362A
JPS592362A JP57109796A JP10979682A JPS592362A JP S592362 A JPS592362 A JP S592362A JP 57109796 A JP57109796 A JP 57109796A JP 10979682 A JP10979682 A JP 10979682A JP S592362 A JPS592362 A JP S592362A
Authority
JP
Japan
Prior art keywords
groove
silicon oxide
capacitor
oxide film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57109796A
Other languages
Japanese (ja)
Inventor
Kazunari Minegishi
Takashi Morie
Ban Nakajima
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP57109796A priority Critical patent/JPS592362A/en
Publication of JPS592362A publication Critical patent/JPS592362A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body

Abstract

PURPOSE:To increase the capacitance of a capacitor while reducing a plane area of the capacitor by forming the capacitor to the side surface of a groove formed to a predetermined section on a substrate and forming an insulating film for isolation to the bottom of the groove. CONSTITUTION:A pad silicon oxide film 203 on the bottom 82 of the groove is removed through etching, a silicon oxide film 41 is formed only onto the bottom 82 of the groove through selective oxidation in wet oxygen while using silicon nitride films 72, 74 as masks, and the silicon nitride films 72, 74 and pad silicon oxide films 202, 203 are removed through etching. As a result of a series of said processes, the groove 10 with the thick silicon oxide film 41 for isolation is formed onto the bottom. A silicon oxide film 21 is formed to the whole surface as an insulating film for the capacitor, and a substance such as phosphorus doped polycrystalline silicon 31 is deposited so as to completely fill the groove 103 as a conductor thin-film and patterned, thus forming the phosphorus doped polycrystalline silicon 31 only to a desired section.
JP57109796A 1982-06-28 1982-06-28 Semiconductor device and manufacture thereof Pending JPS592362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57109796A JPS592362A (en) 1982-06-28 1982-06-28 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57109796A JPS592362A (en) 1982-06-28 1982-06-28 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS592362A true JPS592362A (en) 1984-01-07

Family

ID=14519433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57109796A Pending JPS592362A (en) 1982-06-28 1982-06-28 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS592362A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117258A (en) * 1982-12-24 1984-07-06 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6012752A (en) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device and manufacture thereof
JPS6126253A (en) * 1984-07-16 1986-02-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device and manufacture thereof
JPS6151868A (en) * 1984-08-21 1986-03-14 Nec Corp Semiconductor device
JPS61144059A (en) * 1984-12-18 1986-07-01 Toshiba Corp Semiconductor memory storage
JPS62243358A (en) * 1986-04-15 1987-10-23 Matsushita Electronics Corp Semiconductor storage device
JPS62273764A (en) * 1986-05-21 1987-11-27 Matsushita Electronics Corp Semiconductor memory
JPS6394669A (en) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp Semiconductor storage device
JPS63104466A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Mos type dynamic random access memory (ram)
JPS63110746A (en) * 1986-10-29 1988-05-16 Nec Corp Method for forming device isolation region
JPS63124454A (en) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp Semiconductor storage device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117258A (en) * 1982-12-24 1984-07-06 Hitachi Ltd Semiconductor device and manufacture thereof
JPH0566027B2 (en) * 1982-12-24 1993-09-20 Hitachi Ltd
JPH0326547B2 (en) * 1983-07-01 1991-04-11 Nippon Telegraph & Telephone
JPS6012752A (en) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device and manufacture thereof
JPS6126253A (en) * 1984-07-16 1986-02-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device and manufacture thereof
JPH0351112B2 (en) * 1984-07-16 1991-08-05 Nippon Telegraph & Telephone
JPS6151868A (en) * 1984-08-21 1986-03-14 Nec Corp Semiconductor device
JPS61144059A (en) * 1984-12-18 1986-07-01 Toshiba Corp Semiconductor memory storage
JPS62243358A (en) * 1986-04-15 1987-10-23 Matsushita Electronics Corp Semiconductor storage device
JPS62273764A (en) * 1986-05-21 1987-11-27 Matsushita Electronics Corp Semiconductor memory
JPS6394669A (en) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp Semiconductor storage device
JPS63104466A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Mos type dynamic random access memory (ram)
JPS63110746A (en) * 1986-10-29 1988-05-16 Nec Corp Method for forming device isolation region
JPS63124454A (en) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp Semiconductor storage device

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