JPS59221352A - Epoxy resin composition having low radioactivity - Google Patents

Epoxy resin composition having low radioactivity

Info

Publication number
JPS59221352A
JPS59221352A JP9484783A JP9484783A JPS59221352A JP S59221352 A JPS59221352 A JP S59221352A JP 9484783 A JP9484783 A JP 9484783A JP 9484783 A JP9484783 A JP 9484783A JP S59221352 A JPS59221352 A JP S59221352A
Authority
JP
Japan
Prior art keywords
epoxy resin
filler
flame retardant
amount
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9484783A
Other languages
Japanese (ja)
Inventor
Shinichi Tanimoto
谷本 信一
Shigeru Koshibe
茂 越部
Mitsuo Kakehi
筧 允男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP9484783A priority Critical patent/JPS59221352A/en
Publication of JPS59221352A publication Critical patent/JPS59221352A/en
Pending legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)

Abstract

PURPOSE:To provide the titled composition having excellent flame retardance, high moisture resistance, and low radioactivity, available at a low cost, and suitable as a plastic package of IC free fron soft error, by compounding a filler having extremely low content of radioactive impurities with a flame retardant. CONSTITUTION:An epoxy resin is compounded with (A) a filler containing <=0.005CPH/cm<2> of radioactive impurity in terms of alpha-ray dose, and (B) a flame retardant containing <=0.10CPH/cm<2> of impurities. The filler is preferably high-purity fused silica or high-purity alumina in an amount of 50-90wt%. The flame retardant is preferably a high-purity antimony trioxide, and its amount is 0.5-5wt%. The epoxy resin is preferably an o-cresol novolac epoxy resin, etc. having a softening point of <=80 deg.C, an epoxy equivalent of <=220, a total chlorine content of <=1000ppm, and an electrical conductivity (of the water obtained by treating the resin in a pressure cooker) of <=500muOMEGA/cm.

Description

【発明の詳細な説明】 本発明は、α線等の放射線発生の極めて少ないエポキン
樹脂組成物に係わり、その特徴は放射線不純物の含有量
が極めて少ない充填材及び難燃剤を使用するところにあ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an Epoquine resin composition that emits extremely little radiation such as alpha rays, and is characterized by the use of fillers and flame retardants that contain extremely little radioactive impurities.

最近コンピュータの汎用化には目を見張るものがある。Recently, the general-purpose use of computers has been remarkable.

特(=パソコンやマイコンといった軽便で安価な小型コ
ンピュータは小学生から老人まで幅広く使用されるよう
になってきた。又オフィスコンピュータも小型化や低コ
スト化の動きは著しい。
Small, convenient and inexpensive computers such as personal computers and microcomputers have come to be widely used by everyone from elementary school students to the elderly. Office computers are also becoming more compact and cost-effective.

これら小型コンビエータは機能上からは数年前の大型コ
ンピータに匹適するが、価格はIAo〜1.4oと逆に
下がっている。こういった流れを支えてきているのは、
半導体の低コスト化、即ちコンビエータ関係企業の合理
化努力である。この半導体コストダウンの要因の中で見
逃すことができないものの一つにパッケージのプラスチ
ック化がある。昔からコンビエータは長期C二渡りで故
障しないこと、即ち信頼性が要求されている。このため
昔のパッケージは高価な八−メチツクかセラミックのみ
であった。しかし、プラスチックパッケージC:も信頼
性の非常C:高いものが開発され急激(二切換っている
。現在、民生用のICやトランジスターの大部分及び産
業用のIC,LSIの一部が安価なプラスチックパッケ
ージとなりている。動きとしては信頼性要求レベルの比
較的低い民生用よりパッケージのプラスチック化が進み
高信頼性を要求される産業用もプラスチック化ががなり
進んできている状態にある。今後も産業用半導体のプラ
スチックパッケージ化はますます進んでいくと予想され
るが、現時点で問題として表面化してきたのはソフトエ
ラ一対策である。半導体が高集積化多機能化する例えば
メモリー用途では、メモリー容量がIK→4に→16に
→64K・・・・・・と進む(=従って放射線(α線)
による誤動作=ソフトエラーな受けやすくなる。そこで
パッケージング材も放射線発生量の少ないもの(二しな
ければならない。
These small comviators are functionally comparable to the large computers of a few years ago, but their prices have fallen from IAo to 1.4o. What supports this trend is
This is an effort to reduce the cost of semiconductors, that is, to rationalize combiator-related companies. One of the factors that cannot be overlooked in reducing semiconductor costs is the shift to plastic packaging. For a long time, combiators have been required to be reliable, that is, to not fail during long-term C crossings. For this reason, in the past, packages were only made of expensive octopus or ceramic. However, plastic packages with extremely high reliability have been developed and are rapidly changing.Currently, most consumer ICs and transistors, as well as some industrial ICs and LSIs, are inexpensive. The package is made of plastic.The trend is that plastic packages are being used more and more for consumer use, which requires relatively low reliability, and for industrial use, which requires high reliability, the use of plastic is also increasing.In the future. Although it is expected that the use of plastic packaging for industrial semiconductors will continue to advance, the problem that has surfaced at the moment is countermeasures against soft errors.For example, in memory applications where semiconductors are becoming highly integrated and multifunctional, The capacity progresses as IK → 4 → 16 → 64K... (=Therefore, radiation (α rays)
Malfunctions due to this = soft errors are more likely to occur. Therefore, packaging materials must also be made of materials that emit less radiation.

既に64にはプラスチック化の過渡期であり256にプ
ラスチックパッケージ品も発表されようとしている。こ
れらLSI・超LSIで誤動作が問題となる放射線量を
放射性不純物置(ウラン・トリウム等)及びα線量で示
すと次のようになる。
64th is already a transition period for plastic packaging, and plastic packaging products are about to be announced in 256th. The amount of radiation that causes malfunctions in these LSIs and VLSIs is expressed in terms of radioactive impurities (uranium, thorium, etc.) and alpha rays as follows.

本発明は、64に以上の超LSI等のソフトエラーが特
に問題(二なる回路の封止材料(成形材料・塗料等)を
提供するものである。本発明の要旨とするところは、エ
ポキシ樹脂(−放射性不純物(ウラン・トリウム等)が
α線量で0.005 CPH/dl以下の充填材及び0
.10 CP)j/i以下の難撚剤を配合してなること
を特徴とするエポキシ樹脂組成物である。
The present invention provides a sealing material (molding material, paint, etc.) for circuits that are particularly problematic in the above 64 VLSIs, etc., where soft errors occur.The gist of the present invention is to (-Filling materials with radioactive impurities (uranium, thorium, etc.) at an alpha dose of 0.005 CPH/dl or less and 0
.. This is an epoxy resin composition characterized in that it contains a twist-retardant agent having a twist resistance of 10 CP)j/i or less.

エポキシ樹脂組成物を構成する物質で放射性不純物を含
有する可能性のあるものは充填材及び難燃剤特に無機質
の充填材及び難燃剤である。超LSI用等のエポキシ樹
脂組成物としては、この両者を放射線発生の少ないもの
(=することが必須である。
Substances constituting the epoxy resin composition that may contain radioactive impurities are fillers and flame retardants, particularly inorganic fillers and flame retardants. For epoxy resin compositions for VLSIs, etc., it is essential that both of these components generate less radiation.

充填材及び難燃剤の放射性不純物の量として要求される
レベルは次のとおりである。メモリー容量16K(−使
用されるものは一般グレードの充填材及び齢燃剤レベル
のものである。
The required levels of radioactive impurities in fillers and flame retardants are as follows: Memory Capacity 16K (- General grade filler and aged fuel grade used).

本発明に関係する特許として特開昭57−195151
がある。これは、低放射線のシリカ粉末を充填材として
用いることを要旨としているが、難燃性を必要とする用
途、即ち難燃剤を使用する組成物では目的とする低放射
線特性を得ることはできない。
As a patent related to the present invention, JP-A-57-195151
There is. The gist of this is to use low-radiation silica powder as a filler, but the desired low-radiation properties cannot be obtained in applications that require flame retardancy, that is, in compositions that use flame retardants.

組成物(二難燃性例えばU、94V−0が要求されてい
る。現在では難燃剤が入っていない組成物は用途がない
(二等しく工業性・産業上の有用性が極めて乏しい。
Compositions (two flame retardants, e.g. U, 94V-0) are required.Currently, compositions that do not contain flame retardants have no use (they have extremely poor industrial utility and industrial utility).

又、難燃剤として放射線発生の多い通常市販品例えば、
通常の二酸化アンチモン(α線to、3〜0.8cpa
A)を使用した場合、難燃化は達成できてもエポキシ樹
脂組成物としての低放射線特性を得ることはできない。
In addition, common commercially available flame retardants that generate a lot of radiation, for example,
Ordinary antimony dioxide (alpha to, 3-0.8 cpa
When A) is used, even if flame retardation can be achieved, low radiation characteristics as an epoxy resin composition cannot be obtained.

特にミクロ的(二見た場合高放射線発生の難燃剤が局在
しており、局部的C二α線発生が多くなることも考えら
れ産業用コンピュータ例えば、銀行のオンライン用途の
TC封止材としては信頼性C二欠は使用することはでき
ない。
In particular, flame retardants that generate high radiation (at first glance) are localized, and localized C2-alpha radiation generation may increase. Reliability C cannot be used.

本発明は難燃性を付与した耐湿性が良く廉価で且つ低放
射線性を満足させるエポキシ樹脂組成物を提供する産業
上極めて有益なものである。
The present invention is extremely useful in industry as it provides an epoxy resin composition that is flame retardant, has good moisture resistance, is inexpensive, and satisfies low radiation properties.

又、エポキシ樹脂とはエポキシ基を有するもの全般をい
い、例えば、ビスフェノールA型エポキシ樹脂(シェル
820 、1001等)、ノボラック型エポキシ樹脂(
日本化薬EPPN −201、大日本インキ 5− 化学工業エビクロンN −673等)等を挙げることが
できる。
In addition, epoxy resin refers to all substances having an epoxy group, such as bisphenol A type epoxy resin (Shell 820, 1001, etc.), novolac type epoxy resin (
Examples include Nippon Kayaku EPPN-201, Dainippon Ink 5-Kagaku Kogyo Ebicuron N-673, etc.).

硬化剤としては、エポキシ樹脂と反応するもの全般をい
い、例えば、フェノールノボラック類(日本化薬PN−
80、OCN −100等)、酸無水物類(TCPA 
、 H)IPA等)、アミン類(DDA%DIImV 
)等をいう。
The curing agent refers to all substances that react with epoxy resins, such as phenol novolacs (Nippon Kayaku PN-
80, OCN-100, etc.), acid anhydrides (TCPA
, H) IPA etc.), amines (DDA%DIImV
) etc.

充填材としては、例えばシリカ、アルミナ、炭酸カルシ
ウム、マイカ、クレー、ガラス、アスベスト、水酸化ア
ルミニウム等を挙げることがで永る。
Examples of the filler include silica, alumina, calcium carbonate, mica, clay, glass, asbestos, and aluminum hydroxide.

特に次表のような特徴をもつ高純度熔融シリカ:高純度
アルミナが本発明の目的を達成するの(=有用である。
In particular, high-purity fused silica and high-purity alumina having the characteristics shown in the following table are useful for achieving the objects of the present invention.

 6− 離燃剤としては、例えばアンチモン類(三酸化アンチモ
ン・四・三酸化アンチモン)、ホウ素化合物(ホウ酸・
ホウ酸亜鉛)を挙げることができる。
6- Examples of flame release agents include antimony (antimony trioxide, antimony tetraoxide, antimony trioxide), boron compounds (boric acid, antimony trioxide),
Zinc borate).

中でも、次表のような特徴をもつ高純1度三酸化アンチ
モンが特(−望ましい難燃剤である。
Among them, highly pure antimony trioxide, which has the characteristics shown in the following table, is a particularly desirable flame retardant.

又、無機質充填材及び無機質難燃剤の使用骨としては各
々50〜90重量%、05〜5重量%の範囲とするのが
望ましい。これら重量範囲外では流動性や熱膨張特性や
耐熱性やインサート腐食性等で欠点を示す場合もある。
Further, it is desirable that the amount of the inorganic filler and the inorganic flame retardant used be in the range of 50 to 90% by weight and 05 to 5% by weight, respectively. Outside these weight ranges, there may be defects in fluidity, thermal expansion characteristics, heat resistance, insert corrosion, etc.

特に、半導体封止用の成形材料用途では充填材として無
機質充填材の中でも溶融シリカを5NO重口%、又難燃
剤として無機質充填材の中でも三酸化アンチモンを0.
5〜5重量%使用するのが好ましい。
In particular, in the application of molding materials for semiconductor encapsulation, fused silica is used as a filler among inorganic fillers at 5% by weight, and antimony trioxide is used as a flame retardant among inorganic fillers at 0% by weight.
Preferably, 5 to 5% by weight is used.

又、エポキン樹脂としては、オルトクレゾールノボラッ
ク型エポキシ樹脂特(:軟化点が80℃以下、エボキン
当量が220以下、全塩素量が1000 ppm以下、
ブレッンヤークッカー抽出水の電気伝導度が500μr
s/x以下のものが好ましく、硬化剤としてはフェノー
ルノボラック特(=軟化点が105℃以下、ブレッンヤ
ークッカー抽出水の電気伝導度が100μVα以下且つ
犠酸量が50ppm以下のものが好ましい。
In addition, as the Epoquine resin, ortho-cresol novolak type epoxy resin special (: softening point is 80°C or less, Evoquine equivalent is 220 or less, total chlorine amount is 1000 ppm or less,
The electrical conductivity of Brenyar Cooker extract water is 500 μr.
S/x or less is preferable, and the curing agent is preferably a phenol novolak special (=softening point of 105° C. or less, electric conductivity of Brennyer cooker extract water of 100 μVα or less, and sacrificial acid amount of 50 ppm or less).

(注) 全塩素量;ナトリウムアマルガム法によって測定 20 hr油抽 出下、本発明の詳細な説明を半導体対11−用成形材用
での実施例で説明する。以下に示す使用量は全て重量部
であり1部」と略して用いている。
(Note) Total chlorine amount: Measured by sodium amalgam method. Under oil extraction for 20 hours, the present invention will be described in detail with reference to examples for molding materials for semiconductor pairs. All amounts shown below are parts by weight, abbreviated as 1 part.

実施例 オルトクレゾールノボラック型エポキシ樹脂(住友化学
ESCN −195XI、 ) 20部、フェノールノ
ボラック(日本化薬PN −100) 10部、溶融シ
リカX部、三酸化アンチモン類部、シランカップリング
剤(チッソEES−M ) 0.5部、触媒(ケイ・ア
イ化成PP−360)0.5部、カーボン(三菱化成)
0.5部、離型剤(野田ワックス)0.5部を100℃
の加熱ロールで3分間混合し成形材料を試作した。この
時溶融シリカ及び二酸化アンチモンの種類と@(二水準
を取り第1表のように数種類の成形材料を得た。これら
成形材料の特性及びソフトエラー率を調べた埴1 結果、別表のよう(=超LSI用の成形材料としては充
填材と難燃剤の両者を放射性不純物の少ないもの各々放
射性不純物がα線用で0.005 cpH/crl以下
と0.10 cpa/cII以下のものを使用すること
が必須条件であることが判る。又、成形材料としては充
填9− 材量を50〜90重量%難燃剤量を0.5〜5重量%と
することが好ましいことが判った。
Examples 20 parts of orthocresol novolak type epoxy resin (Sumitomo Chemical ESCN-195XI), 10 parts of phenol novolac (Nippon Kayaku PN-100), X part of fused silica, antimony trioxide part, silane coupling agent (Chisso EES) -M) 0.5 part, catalyst (K-I Kasei PP-360) 0.5 part, carbon (Mitsubishi Kasei)
0.5 part, mold release agent (Noda wax) 0.5 part at 100℃
A molding material was prepared by mixing for 3 minutes using a heating roll. At this time, we took two levels of fused silica and antimony dioxide and obtained several types of molding materials as shown in Table 1.The characteristics and soft error rate of these molding materials were investigated.The results are shown in the attached table. =For VLSI molding materials, fillers and flame retardants should both be low in radioactive impurities, with radioactive impurities for alpha rays below 0.005 cpH/crl and below 0.10 cpa/cII. It has been found that this is an essential condition.It has also been found that it is preferable that the amount of filler material for the molding material be 50 to 90% by weight, and the amount of flame retardant be 0.5 to 5% by weight.

 10− ・放射性不純物量:中性子放射化分析で測定、α線量 
=α線カウンター(サイエンス・スペクトラム社製)で
測定 、ソフトエラー率:======;−一単位(%/10
00 device−hr )、高温特性二工C封止成
形品ヲ200 ℃500 hv保管し、特性変動(リー
ク不良)が出 るか否かで判定 特許出願人   住友ベークライト株式会社 12− 359−
10- ・Amount of radioactive impurities: Measured by neutron activation analysis, α-ray dose
= Measured with an α-ray counter (manufactured by Science Spectrum), soft error rate: ======; - 1 unit (%/10
00 device-hr), high-temperature properties Two-process C encapsulation molded products are stored at 200°C, 500 hv, and judgment is made based on whether or not property changes (leak defects) occur.Patent applicant: Sumitomo Bakelite Co., Ltd. 12-359-

Claims (1)

【特許請求の範囲】[Claims] エボキン樹脂(=放射性不純物がα線量で0.005C
P)k−以下の充填材及び0.100PI(/d以下の
難燃剤を配合してなることを特徴とする低放射線性エポ
キシ樹脂組成物。
Evokin resin (=radioactive impurities are 0.005C in alpha radiation dose)
P) A low radiation epoxy resin composition comprising a filler of k- or less and a flame retardant of 0.100 PI (/d or less).
JP9484783A 1983-05-31 1983-05-31 Epoxy resin composition having low radioactivity Pending JPS59221352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9484783A JPS59221352A (en) 1983-05-31 1983-05-31 Epoxy resin composition having low radioactivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9484783A JPS59221352A (en) 1983-05-31 1983-05-31 Epoxy resin composition having low radioactivity

Publications (1)

Publication Number Publication Date
JPS59221352A true JPS59221352A (en) 1984-12-12

Family

ID=14121419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9484783A Pending JPS59221352A (en) 1983-05-31 1983-05-31 Epoxy resin composition having low radioactivity

Country Status (1)

Country Link
JP (1) JPS59221352A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004039693A1 (en) * 2004-08-16 2006-02-23 Infineon Technologies Ag chip module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141569A (en) * 1978-04-26 1979-11-02 Toshiba Corp Semiconductor device
JPS57195151A (en) * 1981-05-27 1982-11-30 Denki Kagaku Kogyo Kk Low-radioactive resin composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141569A (en) * 1978-04-26 1979-11-02 Toshiba Corp Semiconductor device
JPS57195151A (en) * 1981-05-27 1982-11-30 Denki Kagaku Kogyo Kk Low-radioactive resin composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004039693A1 (en) * 2004-08-16 2006-02-23 Infineon Technologies Ag chip module
US7397140B2 (en) 2004-08-16 2008-07-08 Infineon Technologies Ag Chip module
DE102004039693B4 (en) * 2004-08-16 2009-06-10 Infineon Technologies Ag Potting compound, chip module and method for producing a chip module

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