JPS59218753A - Manufacture of microwave integrated circuit module - Google Patents
Manufacture of microwave integrated circuit moduleInfo
- Publication number
- JPS59218753A JPS59218753A JP58093463A JP9346383A JPS59218753A JP S59218753 A JPS59218753 A JP S59218753A JP 58093463 A JP58093463 A JP 58093463A JP 9346383 A JP9346383 A JP 9346383A JP S59218753 A JPS59218753 A JP S59218753A
- Authority
- JP
- Japan
- Prior art keywords
- ribbon
- integrated circuit
- housing
- microwave integrated
- circuit module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は、マイクロ波集積回路モジュールの製造方法に
係り、とぐにキャリアに搭載したマイクロ波集積回路基
板間を接続するリードリボンに緩Ｘフォーミングを行う
ようにしたマイクロ？皮集（青回路モジュールの製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for manufacturing a microwave integrated circuit module, in which loose X forming is performed on a lead ribbon that connects microwave integrated circuit boards mounted on a carrier. Micro that you tried to do? Collection (related to the method of manufacturing blue circuit modules).
（＋）） 従来技術と問題点
従来、マイクロ波集積回路（以下Ｍ ｒ Ｃという）モ
ジュールに搭載されたＭ工Ｃμ、板の接続あるいはＭ工
Ｃモジュールの入出力伝送線路の接続−１、ＭＩＣおよ
び入出力伝送線路ｆ：構成する誘゛酸体基板上に設けた
ヌトリッグ伝送線路相互間に導体リボンをボンディング
により接続し、ているが、Ｍ ＩＣを構成する誘電体基
板あるいはＭ Ｉ に基板を拷載するキャリア、筐体等
の熱膨張率等熱的！Ｆ、”ｆ性の相違により、Ｍ工Ｃモ
ジュールが熱的ストレヌを受け、Ｍ工Ｃ基板間、あるい
はギヤリア接続間が変動して、Ｍ工Ｃ接続部の導体リボ
ンお」：びリボンのボンディング部にヌトレスを受け、
リードリボンの破損、あるいはボンディング部の剥れ等
が発生する等の問題があった。そこでこｉｌらの問題を
解決するための従来のマイクロ波集積回路モジュールの
製造方法の断面図を第１ ［Ｍ＋および第２図に示す。(+)) Prior art and problems Conventionally, connection of the M-Cμ and board mounted on the microwave integrated circuit (hereinafter referred to as M r C) module or the input/output transmission line connection of the M-C module -1, MIC and input/output transmission line f: A conductive ribbon is connected by bonding between the nutrig transmission lines provided on the dielectric substrate constituting the MIC. Thermal expansion coefficient of the carrier, casing, etc. to be loaded! F: Due to the difference in f properties, the M-C module is subjected to thermal strain, which causes variations in the M-C board or gear connection, resulting in damage to the conductor ribbon and ribbon bonding at the M-C connection. Receive nutres in the department,
There were problems such as breakage of the lead ribbon or peeling of the bonding part. Therefore, cross-sectional views of a conventional method of manufacturing a microwave integrated circuit module to solve these problems are shown in FIG. 1 [M+] and FIG.
図においてｌおよび１′は）、＝１ ］、 Ｃ：４（仮
、２および２′は；Ｍｇ ’ｔｌ−５体たとえばアｌレ
ミナ等からなる誘電体へ板、３お、ｒび３′は入出カス
１〜リツプ伝送線路、４および４′はアースＩｎ体、５
およびｂ′は金属たとえばコバーノリｔからなるキャリ
ア、６は金属たとえば銅等からなる筐体、７および７′
は接続リート、８は接続線で、２Ｊはリードリボンであ
る。In the figure, l and 1' are), = 1 ], C: 4 (temporarily, 2 and 2'are; is the input/output cass 1 to rip transmission line, 4 and 4' are ground In body, 5
and b' are carriers made of a metal such as copper, 6 are casings made of metal such as copper, and 7 and 7'
is a connection leat, 8 is a connection wire, and 2J is a lead ribbon.
アルミナ等からなる誘′直体基板２および２′のそれぞ
れ一方の而に人出カストリップ°伝送線路８おおよび４
′（則がコバール等からなるキャリア５および５′に当
接するよう搭載したるのち、該キャリア５および５′を
銅（ＣＬＬ ）等からなる筐体に搭載する。Transmission lines 8 and 4 are connected to one side of each dielectric substrate 2 and 2' made of alumina or the like.
After the carriers 5 and 5' are mounted so as to be in contact with carriers 5 and 5' made of Kovar or the like, the carriers 5 and 5' are mounted on a casing made of copper (CLL) or the like.
そして前記ＭｌＧ基板ｌおよび１′の間を第１図のごと
く接続ＩＪ −１”７および７′と接続線８をそれぞれ
ボンデ・ｒング等により接続するか、または第２図に示
すととく金（Ａｕ、）線等からなるリボンを逆Ｕ字状に
形成してボンディング接続している。ところが、このよ
うな接続方法すなわち第１図の接続方法では周波数帯域
が１〜２ＧＨ２帯までであり、ｉｆｆ′ｒｊ２図でＩｒ
ｊ： ｊＪ１口二がｉＥ］能なフォーミングの大きさく
たとえば高さ］−１１Ｊ ＋長手方向２〜３Ｉ藺）で（
は〔５〜７Ｇ ）Ｉ Ｚ帯までであり、これ以上すなわ
ちｒｊ、ｌ＝ミリ波。Then, as shown in FIG. 1, the connection IJ-1"7 and 7' and the connection wire 8 are connected by bonding, etc. between the MlG substrates l and 1', or as shown in FIG. Ribbons made of (Au, ) wires, etc. are formed into an inverted U shape and bonded to each other. However, in this connection method, that is, the connection method shown in Fig. 1, the frequency band is from 1 to 2 GH2 band, Ir in the if'rj2 diagram
j: jJ1 口2iE] Possible forming size (for example, height) - 11J + longitudinal direction 2~3I) (
is [5-7G) up to the IZ band and above this, i.e. rj, l = millimeter wave.
ミリ波帯の周波数帯域では寸法梢ノＷのバラツギ等で伝
送線路の不整合が補正できなくなる等の問題点があった
。In the millimeter wave frequency band, there are problems such as mismatching of the transmission line cannot be corrected due to variations in the dimensional width W.
（Ｃ）発明の目的
本発明は、」−記従来の問題点に鑑み、＋ｑＩｃｑ板間
に平面なリードリボンをボンディングにより接続して、
加熱により予想広がり以」二のヌｌ−ｖスを加えたるの
ち常温に復帰せしめ、前記リードリボンにストレス緩衝
フォーミングを行うようにしたマイクロ波集積回路モジ
ュールの製造方法を提供することを目的とするものであ
る。(C) Purpose of the Invention In view of the problems of the prior art, the present invention connects a flat lead ribbon between +qIcq plates by bonding,
An object of the present invention is to provide a method for manufacturing a microwave integrated circuit module, in which the lead ribbon is subjected to stress buffering forming after heating to apply a l-v of 200% more than the expected spread, and then allowing the lead ribbon to return to room temperature. It is something.
（ｄ）発明の構成
前述の目的を達成するために本発明は、複佐個のマイク
ロ波集Ｊｅｔ回路基板を所定の間１ｍを介し−Ｃキャリ
アに搭載し、隣接する回路基板間を弛緩状に形成したリ
ードリボンで接続するマイクロ波集積回路モシューｌし
の製造方法において、ｎｉＪ記り一ドリボンを平面状の
リードリボンでボンディング接続したるのち、前記キャ
リアを筐体上に載置し、該筐体を加熱してＵｉＪ記マイ
クロ波集積回路基板間の予想広がり以上の外部ストレス
を加え、前記リードリボンにストレス緩衝フォーミング
を行うことによって達成される。(d) Structure of the Invention In order to achieve the above-mentioned object, the present invention includes mounting a plurality of microwave concentrating Jet circuit boards on a -C carrier with a predetermined distance of 1 m between them, and connecting the adjacent circuit boards in a relaxed manner. In the manufacturing method of a microwave integrated circuit module, which is connected with a lead ribbon formed on a wafer, after bonding the niJ-marked ribbon with a flat lead ribbon, the carrier is placed on a casing, and the This is achieved by heating the casing to apply an external stress greater than the expected spread between the UiJ microwave integrated circuit boards, and performing stress buffering forming on the lead ribbon.
（ｅ） 発明の実施例
以下図面を参照し女から本発明に係るマイクロ波集積回
路モジュールの製造方法の実施例について詳細に説明す
る。(e) Embodiments of the Invention Hereinafter, embodiments of the method for manufacturing a microwave integrated circuit module according to the present invention will be described in detail with reference to the drawings.
第３図は本発明の一実施例を説明するための断面図であ
る。第３図において、この発明のマイクロ波集積回路モ
ジュールの製造方法は第２図と同様Ｉｖｌ工Ｃ基板、キ
ャリア、筐体ならびにリードリボン等をそなえているが
、該リードリボンを改良した点に特−を有する。したが
ってリードリボン３１以外は第２図と同じ符号を付して
おり、ここではこれらの部分の説明は省略するものとす
る。FIG. 3 is a sectional view for explaining one embodiment of the present invention. In FIG. 3, the method for manufacturing a microwave integrated circuit module according to the present invention includes an Ivl C board, a carrier, a casing, a lead ribbon, etc. as in FIG. 2, but the lead ribbon is improved. - has. Therefore, the parts other than the lead ribbon 31 are given the same reference numerals as in FIG. 2, and the explanation of these parts will be omitted here.
３１は導体たとえば金（Ａｕ）等からなるリードリボン
である。31 is a lead ribbon made of a conductor such as gold (Au).
筐体６」二にキャリア５．６′を所定の間１：京會隔−
Ｃて搭載し、該キャリア５および５′上に＋ａ １Ｃ基
板ｌおよび１′を載置する。そして該Ｍ ］ｉ Ｃｊｉ
（仮ｌと１′を平面状のリードリボン３１をポンチ゛イ
ングにより接続した状態でＩψ工Ｃモシコー−ルの筐体
６を加熱すると、該筒体６は通常放熱特性および加］−
性、経済性の優れた銅および銅合金、またはア／Ｖミ合
金が用いられるため、アＪレミナあるいｉｌｉセラミッ
ク等で構成されるＭＩＣ基板１，１′および核ＩφＩＣ
基板接合キャリア５．５′より熱膨張が太きいため、Ｍ
ＩＣ基板１，１′の間ｉＸＡ Ｄは筐体６の熱膨張によ
って１．）′と大きくなる。このときホンディング性が
優、１１、かつ延伸性の優れた金（Ａｕ’）で構成され
たリードリボン３１は筐体６に準じて延伸する。そこで
前記筐体６を常温に下げると平面であったリードリボン
３１は８１′のよりにフォーミングされる。このように
リードリボン３１のフォーミングは筐体６の加熱するこ
とによって非常に小さいフォーミングが可能となり、し
かもボンディング接合部にもストレスが加わるのでポン
デイング小良を早期に発見することができる。Place the carrier 5.6' on the casing 6'2 at a predetermined distance 1: Kyoto distance-
The +a 1C substrates 1 and 1' are placed on the carriers 5 and 5'. and the M ]i Cji
(If the casing 6 of the Iψ C Moshicor is heated with the planar lead ribbons 31 connected to the temporary 1 and 1' by punching, the cylindrical body 6 will have normal heat dissipation properties and
The MIC substrates 1, 1' and the core IφIC are made of AJ remina or ili ceramic, etc., because copper and copper alloys, or A/V alloys, which are excellent in performance and economy, are used.
M
The iXA D between the IC boards 1 and 1' is 1. )′ becomes large. At this time, the lead ribbon 31 made of gold (Au'), which has excellent hondability and stretchability, is stretched in the same manner as the casing 6. Then, when the casing 6 is lowered to room temperature, the flat lead ribbon 31 is formed into a twist 81'. In this way, the forming of the lead ribbon 31 can be performed in a very small amount by heating the casing 6, and since stress is also applied to the bonding joint, small bonding defects can be detected at an early stage.
（ｆ） 尾明の効果
以−４二の説明から明らかなように本発明に係るマイク
ロ波集積回路モジュールの製造方法によノ１ば、従来の
リードリボンにくらべて最小のフォーミングが可能とな
るので伝送特性の向上に寄与するところが大であるとと
もに、品質の向上も期待できる。(f) Oimei's effect As is clear from the explanation in Section 42, the method for manufacturing a microwave integrated circuit module according to the present invention enables minimal forming compared to conventional lead ribbons. Therefore, it will greatly contribute to improving transmission characteristics, and it can also be expected to improve quality.
第１図および第２図は従来のマイクロ四］ｔ（回路モジ
ュー／しの製造方法を説明するための断面図。
第３図は本発明に係るマイクロ波集積回路モジュールの
一実施例を説明するためのＩＬ１１而図で面る。
図に訃いて、■および１′ばＭ Ｉ ＣＪ、％板、２お
よび２′は誘′醒体基板、３および３′は入出カメトリ
ップ伝送線路、４および４′はアース導体、５および５
′はキャリア、６は筐体、７．７’、３］およＱ： ：
３１’は接続リード、８は接続線、２１はリードリボン
をそれぞれ示す。FIGS. 1 and 2 are cross-sectional views for explaining a method of manufacturing a conventional micro-circuit module. FIG. 3 illustrates an embodiment of a microwave integrated circuit module according to the present invention. In the figure, ■ and 1' are M I CJ, % board, 2 and 2' are induction substrates, 3 and 3' are input and output camera trip transmission lines, 4 and 4' is the ground conductor, 5 and 5
' is the carrier, 6 is the housing, 7.7', 3] and Q: :
31' is a connection lead, 8 is a connection line, and 21 is a lead ribbon.
Claims (1)
キャリアに搭載し、隣接する回路基板間を弛緩状に形成
したリードリボンで接続するマイクロ波集積回路モジュ
ールの製造方法において、前記リードリボンを平面状の
リードリボンでボンディング接続したるのち、前記キャ
リアを筐体上に載置し、該筒体を加熱して前記マイクロ
波集積回路基板間の予想広がり以上の外部ヌ）ｌ／スを
加え、前記リードリボンにストレヌ緩衝フォーミングを
行うことを特徴とするマイクロ波集積回路モジュールの
製造方法。A method for manufacturing a microwave integrated circuit module in which a plurality of microwave integrated circuit boards are mounted on a carrier with a predetermined gap therebetween, and adjacent circuit boards are connected by a lead ribbon formed in a loose shape. After bonding with a flat lead ribbon, the carrier is placed on a casing, and the cylindrical body is heated to apply an external force larger than the expected spread between the microwave integrated circuit boards. . A method for manufacturing a microwave integrated circuit module, characterized in that the lead ribbon is subjected to strain buffer forming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58093463A JPS59218753A (en) | 1983-05-26 | 1983-05-26 | Manufacture of microwave integrated circuit module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58093463A JPS59218753A (en) | 1983-05-26 | 1983-05-26 | Manufacture of microwave integrated circuit module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59218753A true JPS59218753A (en) | 1984-12-10 |
Family
ID=14083027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58093463A Pending JPS59218753A (en) | 1983-05-26 | 1983-05-26 | Manufacture of microwave integrated circuit module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59218753A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6365654A (en) * | 1986-09-05 | 1988-03-24 | Mitsubishi Electric Corp | Microwave integrated circuit |
-
1983
- 1983-05-26 JP JP58093463A patent/JPS59218753A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6365654A (en) * | 1986-09-05 | 1988-03-24 | Mitsubishi Electric Corp | Microwave integrated circuit |
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