JPS59214105A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPS59214105A JPS59214105A JP58086936A JP8693683A JPS59214105A JP S59214105 A JPS59214105 A JP S59214105A JP 58086936 A JP58086936 A JP 58086936A JP 8693683 A JP8693683 A JP 8693683A JP S59214105 A JPS59214105 A JP S59214105A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- dielectric
- weight
- temperature
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高安定度磁器コンデンサ材料として使用され
る誘電体磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to dielectric ceramic compositions used as high stability ceramic capacitor materials.
従来技術とその問題点
高安定度磁器コンデンサ材料としては、従来から種々の
誘電体磁器組成物が公知である。これらの従来の誘電体
磁器組成物によって、例えば温度補償用積層磁器コンデ
ンサ等を製造する場合、Ag−Pd合金等で形成される
内部電極に対する熱的悲影響を考えると、焼成温度をで
きるだけ低く抑えたい。ところが従来の誘電体磁器組成
物は、焼成温度が1300〜1400°C程度であり、
焼成温度をこれ以下にすると、誘電率が低下し、損失が
増え、誘電率の温度係数が大きくなり、満足な特性が得
られない。このため、例えば温度補償用積層磁器コンデ
ンサ等においては、特性の改善に限界を生じていた。Prior Art and its Problems Various dielectric ceramic compositions have been known as high stability ceramic capacitor materials. When manufacturing, for example, temperature-compensating multilayer ceramic capacitors using these conventional dielectric ceramic compositions, it is necessary to keep the firing temperature as low as possible, considering the negative thermal effects on the internal electrodes formed of Ag-Pd alloys, etc. sea bream. However, conventional dielectric ceramic compositions have a firing temperature of about 1300 to 1400°C;
If the firing temperature is lower than this, the dielectric constant decreases, loss increases, and the temperature coefficient of the dielectric constant increases, making it impossible to obtain satisfactory characteristics. For this reason, there has been a limit to the improvement of characteristics in, for example, temperature-compensating multilayer ceramic capacitors.
本発明の目的
そこで本発明は上述する従来からの問題点を解決し、高
誘電率、低損失かつ誘電率の低温度係数を保ったままで
、焼成温度を200〜300℃程度も低下させ得るよう
にした焼結性の良好な誘電体磁器組成物を提供すること
を目的とする。Purpose of the Invention Therefore, the present invention solves the above-mentioned conventional problems, and makes it possible to lower the firing temperature by as much as 200 to 300°C while maintaining a high dielectric constant, low loss, and a low temperature coefficient of dielectric constant. The object of the present invention is to provide a dielectric ceramic composition with good sinterability.
本発明の構成
上記目的を達成するため、本発明に係る誘電体磁器組成
物は、Xモル形BaO−Vモル%TiOλ−2モル%N
d2O3の三成分系組成物において、X、y及び2が
5≦X≦25
55≦y≦80
10≦2≦30
x+y+z=100
と表される組成物を主成分とし、副成分として、a重量
%pbo −b重量%Bizlh c重量%SiO
λ−8重量%ZnOにおいて、a、b、c及びdが0≦
a≦95
0≦b≦95
5≦C≦20
0≦d≦20
a+ b+c+d= 1 00
と表される焼結助材を5重量%乃至20重量%含有する
ことを特徴とする。Structure of the Present Invention In order to achieve the above object, the dielectric ceramic composition according to the present invention has an X molar type BaO-V mol%TiOλ-2 mol%N
In the ternary composition of d2O3, the main component is a composition in which X, y, and 2 are expressed as 5≦X≦25 55≦y≦80 10≦2≦30 x+y+z=100, and as a subcomponent, a weight %pbo-bwt%Bizlhcwt%SiO
In λ-8 wt% ZnO, a, b, c and d are 0≦
It is characterized by containing 5% by weight to 20% by weight of a sintering aid expressed as a≦95 0≦b≦95 5≦C≦20 0≦d≦20 a+b+c+d=100.
かかる組成の誘電体磁器組成物は、高話・電率、低損失
かつ誘電率の低温度係数を保持したままで、焼成温度を
1100°C前後と、従来より200〜300℃も低く
することができ、例えば70重量%Ag−30重量%P
d合金を内部電極とする温度補償用積層チップコンデン
サを製造するのに好適な誘電体磁器組成物が得られるこ
とが解った。A dielectric ceramic composition having such a composition can be fired at a firing temperature of around 1100°C, which is 200 to 300°C lower than conventional methods, while maintaining high electrical conductivity, low loss, and a low temperature coefficient of dielectric constant. For example, 70% Ag-30% P
It has been found that a dielectric ceramic composition suitable for manufacturing a temperature-compensating multilayer chip capacitor using a d-alloy as an internal electrode can be obtained.
以下実施例により、本発明の内容を具体的に説明する。The content of the present invention will be specifically explained below with reference to Examples.
実施例
本発明の誘電体磁器組成物を得る出発原料として、Ba
CO3,TiO2、Nd、−OB、 PbO、Bi2O
5、5iO1、ZnOの各粉末を用いた。なおここで用
いた原料粉末は、95%Ndz OB を除いて、何れ
も純度98%以上のものを使用した。Examples As a starting material for obtaining the dielectric ceramic composition of the present invention, Ba
CO3, TiO2, Nd, -OB, PbO, Bi2O
5, 5iO1, and ZnO powders were used. Note that all of the raw material powders used here had a purity of 98% or higher, except for 95% Ndz OB .
次に主成分となるBaZO3、Ti0z、NdzOs
ノ各粉末を表1の組成範囲となるように秤量し、これを
ボールミル中で4昆合処理した。次に濾過乾燥させて、
直径601、高さ50mmの円柱状に加圧成形した後、
1150°C乃至1250°Cの温度条件で、2時間、
空気中で仮焼を行ない、粉砕した。Next, the main components are BaZO3, Ti0z, and NdzOs.
Each powder was weighed so as to have the composition range shown in Table 1, and subjected to four-combining treatment in a ball mill. Then filter and dry
After pressure molding into a cylindrical shape with a diameter of 601 mm and a height of 50 mm,
2 hours at a temperature of 1150°C to 1250°C.
It was calcined in air and pulverized.
一方、焼結助材であるPbO、si、o3、S+ Ol
、ZnOを表1の組成範囲となるように秤量し、これ
を前δ東生成分粉砕粉末に加え、ボールミル中で混自
合処理した。次に濾過乾燥させて、直径16.5ff1
mの円板に加圧成形した後、1050°C乃至1150
°Cの温度条件で2時間焼成した。このようにして得ら
れた誘電体磁器の両面に銀電極を焼付けて磁器コンデン
サとした。この磁器コンデンサはN002〜N0.10
として表1に示しである。次にこれらの磁器コンデンサ
試料の誘電率ε、誘電損失tan δ及び誘電率の温度
係数ppm/’Cを、−55℃から+125°Cの温度
範囲、周波数IMΩの条件で測定した。イη・られた結
果の内、代表的な例を表1に示しである。なお、表1に
おいてNO,1の試料はBaCO3、TiO2、Nd2
0aだけの組成に成る誘電体磁器組成物によって製造さ
れた磁器コンデンサであり、本発明に対する比較例であ
る。On the other hand, sintering aids PbO, si, o3, S+Ol
, ZnO were weighed to have the composition range shown in Table 1, added to the pulverized powder of the previous δ Tosei component, and mixed in a ball mill. Next, it is filtered and dried, and the diameter is 16.5ff1.
After pressure forming into a disc of 1050°C to 1150°C
It was baked for 2 hours at a temperature of °C. Silver electrodes were baked on both sides of the dielectric ceramic thus obtained to produce a ceramic capacitor. This ceramic capacitor is N002~N0.10
As shown in Table 1. Next, the dielectric constant ε, dielectric loss tan δ, and temperature coefficient of dielectric constant ppm/'C of these ceramic capacitor samples were measured under the conditions of a temperature range of -55°C to +125°C and a frequency of IMΩ. Table 1 shows typical examples of the results obtained. In addition, in Table 1, the samples of NO, 1 are BaCO3, TiO2, Nd2
This is a ceramic capacitor manufactured using a dielectric ceramic composition having a composition of only 0a, and is a comparative example to the present invention.
(以−ド余白)
表1を見ると明らかなように、比較例たる試料N011
は誘電性はある程度の値を示しているが、焼成温度を1
360°Cの高い値に保つ必要がある。(Additional blank space) As is clear from Table 1, sample N011, which is a comparative example,
shows a certain level of dielectric property, but when the firing temperature is increased to 1
It is necessary to maintain the temperature at a high value of 360°C.
これに対して、焼結助材としてPbO、Bi2O3、S
i 02 、 ZnOを含有せしめた本発明に係る誘
電体磁器組成物によって製造された試料NO2〜10は
、焼成温度が1100−1140℃と、比較例より20
0〜300 ’O程度も低いにも拘わらず、誘電率が高
く、誘電損失tanδが0.01と非常に小さく、しか
も誘電率の温度係数も低い値を示している。On the other hand, as sintering aids PbO, Bi2O3, S
Samples NO2 to 10 manufactured using the dielectric ceramic composition according to the present invention containing i 02 and ZnO had a firing temperature of 1100-1140°C, which was 20°C compared to the comparative example.
Although it is as low as 0 to 300'O, it has a high dielectric constant, a very small dielectric loss tan δ of 0.01, and a low temperature coefficient of dielectric constant.
このような低焼成温度で優れた誘電性及び温度特性を示
す範囲は、7モル%BaO−’1モル%TiOλ−Zモ
ル%Ndえ0!の三成分系組成物において、x、y及U
’ zが、
5≦X≦25
55≦y≦80
10≦Z≦30
)(+y+Z=100
と表される組成範囲内にあり、かつ副成分と[で、a重
量%pbo −b重量%Bi203−c重量%5i02
d 爪部%ZnOにおいて、a、b、C及びdが
0≦a≦95
0≦b≦95
5≦C≦20
0≦d≦20
a + b + c + d = l OOと表
される焼結助材を、5重量%乃至20重量%含有する組
成物に限定される。The range that exhibits excellent dielectric properties and temperature characteristics at such a low firing temperature is 7 mol%BaO-'1 mol%TiOλ-Z mol%Nde0! In the ternary composition of x, y and U
'z is within the composition range expressed as 5≦X≦25 55≦y≦80 10≦Z≦30) (+y+Z=100, and the subcomponents and -c weight%5i02
d In the nail part % ZnO, a, b, C and d are 0≦a≦95 0≦b≦95 5≦C≦20 0≦d≦20 a + b + c + d = l OO The composition is limited to a composition containing 5% to 20% by weight of the binder.
x、y、zの値が上記範囲外になると、誘電率が小さく
なるか、誘電損失が大きくなるか或いは誘電率の温度特
性が大きくなって、実用性を失う。If the values of x, y, and z are outside the above ranges, the dielectric constant becomes small, the dielectric loss becomes large, or the temperature characteristic of the dielectric constant becomes large, and practicality is lost.
次にa、b、C,dの値が上記範囲外になると、焼成温
度が高くなり、本発明の目的に合致しなくなる。また焼
結助材の含有量が5重量%以下になると、焼成温度が高
くなり、20重量%以上になると誘電損失が大きくなる
か、或いは誘電率の温度係数が大きくなって実用性を失
う。Next, if the values of a, b, C, and d are outside the above ranges, the firing temperature will become high and the object of the present invention will not be met. Further, if the content of the sintering aid is less than 5% by weight, the firing temperature will be high, and if it is more than 20% by weight, the dielectric loss will increase or the temperature coefficient of the dielectric constant will increase, making it impractical.
本発明の効果
以北述べたように、本発明に係る誘電体磁器組成物は、
Xモル形Ba0−yモル形Ti02−zモル形Nd2O
!l の三成分系組成物において、x、y及び2を限定
された所定の値に選足した組成物を主成分とし、これに
副成分として、a重量%pbo −b重量%Bi20B
−c重量%5i02d重量%ZnOにおいて、a、b、
c及びdを所定の値に限定した焼結助材を、5重量%乃
至20重量%含有させたことを特徴とするから、高誘電
率、低損失かつ誘電率の低温度係数を保ったままで、焼
成温度を200〜300°C程度も低下させ得るように
した焼結性の良好な誘電体磁器組成物を提供することが
できる。As described above, the dielectric ceramic composition according to the present invention has the following effects:
X molar form Ba0-y molar form Ti02-z molar form Nd2O
! In the ternary composition of l, the main component is a composition in which x, y, and 2 are selected to a limited predetermined value, and as a subcomponent, a weight % pbo - b weight % Bi20B
-c wt% 5i02d wt% ZnO, a, b,
Since it is characterized by containing 5% to 20% by weight of sintering aids that limit c and d to predetermined values, it maintains high dielectric constant, low loss, and low temperature coefficient of dielectric constant. , it is possible to provide a dielectric ceramic composition with good sinterability and which can lower the firing temperature by as much as 200 to 300°C.
Claims (1)
Nd、 03 の三成分系組成物において、x、y及び
2が、 5≦X≦25 55≦y≦80 1O≦2≦30 x+y+z−1o。 と表される組成物を主成分とし、副成分として、a重量
%pbo−bz−量%Bi、 (h −c 重量%5i
(b −d取量%ZnOにおいて、a、b、c及びdが
O≦a≦95 0≦b≦95 5≦C≦20 0≦d≦20 a+b+c+d=10−0 と表される焼結助材を5重量%乃至20重量%含有する
ことを特徴とする誘電体磁器組成物。(1) In a ternary composition of X molar form Ba0-7 mol% Ti02-z molar form Nd, -1o. The main component is a composition expressed as , and the subcomponents are a weight % pbo-bz- amount % Bi, (h - c weight % 5i
(In the b - d amount of ZnO, a, b, c and d are expressed as O≦a≦95 0≦b≦95 5≦C≦20 0≦d≦20 a+b+c+d=10−0 A dielectric ceramic composition characterized by containing 5% to 20% by weight of a material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58086936A JPS59214105A (en) | 1983-05-18 | 1983-05-18 | Dielectric porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58086936A JPS59214105A (en) | 1983-05-18 | 1983-05-18 | Dielectric porcelain composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59214105A true JPS59214105A (en) | 1984-12-04 |
Family
ID=13900750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58086936A Pending JPS59214105A (en) | 1983-05-18 | 1983-05-18 | Dielectric porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59214105A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4866017A (en) * | 1985-03-18 | 1989-09-12 | Kyocera Corporation | Dielectric ceramic composition of matter |
US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
JP2002326867A (en) * | 2001-05-01 | 2002-11-12 | Samsung Electro Mech Co Ltd | Dielectric ceramic composition and ceramic capacitor using it and method of manufacturing them |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57170405A (en) * | 1981-04-13 | 1982-10-20 | Murata Manufacturing Co | Porcelain dielectric for compensating temperature |
-
1983
- 1983-05-18 JP JP58086936A patent/JPS59214105A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57170405A (en) * | 1981-04-13 | 1982-10-20 | Murata Manufacturing Co | Porcelain dielectric for compensating temperature |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4866017A (en) * | 1985-03-18 | 1989-09-12 | Kyocera Corporation | Dielectric ceramic composition of matter |
US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
US5304521A (en) * | 1991-09-27 | 1994-04-19 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5350721A (en) * | 1991-09-27 | 1994-09-27 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZNO-B203-SI02 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5458981A (en) * | 1991-09-27 | 1995-10-17 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5485132A (en) * | 1991-09-27 | 1996-01-16 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5488019A (en) * | 1991-09-27 | 1996-01-30 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
US5493262A (en) * | 1991-09-27 | 1996-02-20 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
JP2002326867A (en) * | 2001-05-01 | 2002-11-12 | Samsung Electro Mech Co Ltd | Dielectric ceramic composition and ceramic capacitor using it and method of manufacturing them |
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