JPH02141472A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH02141472A JPH02141472A JP63294099A JP29409988A JPH02141472A JP H02141472 A JPH02141472 A JP H02141472A JP 63294099 A JP63294099 A JP 63294099A JP 29409988 A JP29409988 A JP 29409988A JP H02141472 A JPH02141472 A JP H02141472A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- dielectric constant
- dielectric
- ceramic composition
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 32
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 20
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 abstract 2
- 238000010304 firing Methods 0.000 description 16
- 239000003990 capacitor Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は誘電体磁器組成物に係り、特に高いＱ値を有し
、高誘電率であり、誘電率の温度係数が小さくかつ低温
で焼結が可能な温度補償用誘電体磁器組成物に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a dielectric ceramic composition, which has a particularly high Q value, a high dielectric constant, a small temperature coefficient of dielectric constant, and can be sintered at a low temperature. The present invention relates to a temperature-compensating dielectric ceramic composition that can be bonded.
電子回路のコンデンサ材料等として用いられる誘電体材
料のうち温度補償用誘電体材料としては、従来、ＢａＯ
−Ｔｉ０２−ＮｄｚＯ３系磁器組成物や、Ｃａ Ｔ ｉ
０３−１− ａ ２０ ｓ ・２ Ｔ ｉ ＯＺＭｇ
ＴｉＯａ系磁器組成物が用いられていた。Among dielectric materials used as capacitor materials in electronic circuits, BaO has conventionally been used as a dielectric material for temperature compensation.
-Ti02-NdzO3-based porcelain composition, CaTi
03-1- a 20 s ・2 T i OZMg
A TiOa-based porcelain composition was used.
ところが、上記の如き磁器組成物は本焼成温度が１３０
０°Ｃ〜１３４０℃と比較的高温であるため、積層チッ
プコンデンサのような構造のコンデンサを製造する場合
、内部電極には高温に耐える電極材料として高価な金（
Ａｕ）、白金（ｐ ｔ ）、パラジウム（Ｐｄ）又はそ
の合金等を使用する必要があった。However, the main firing temperature of the above-mentioned porcelain composition is 130°C.
Since the temperature is relatively high at 0°C to 1340°C, when manufacturing capacitors with structures such as multilayer chip capacitors, expensive gold (gold) is used for internal electrodes as an electrode material that can withstand high temperatures.
It was necessary to use materials such as Au), platinum (pt), palladium (Pd), or alloys thereof.
そのため、結果的に積層チップコンデンサのコストを著
しく高くするものである。This results in a significant increase in the cost of the multilayer chip capacitor.
内部電極の電極材料として、コストの安い銀パラジウム
（Ａ ｇ −Ｐ ｄ ）の合金を使用すれば、安いコス
トで積層チップコンデンサの製造が可能である。しかし
、誘電体材料の焼成温度を、Ａｇの蒸発等が起きないよ
うに、１２００℃以下に下げる必要がある。If an inexpensive alloy of silver-palladium (Ag-Pd) is used as the electrode material for the internal electrodes, it is possible to manufacture a multilayer chip capacitor at a low cost. However, it is necessary to lower the firing temperature of the dielectric material to 1200° C. or lower to prevent evaporation of Ag.
とごろが、従来の誘電体材料では焼成温度を下げると、
誘電率や絶縁抵抗が低下し、素子の信軌性等で満足な特
性が得られないという問題点があった。However, with conventional dielectric materials, if the firing temperature is lowered,
There was a problem in that the dielectric constant and insulation resistance decreased, making it impossible to obtain satisfactory characteristics such as the reliability of the element.
従って、本発明の目的は、高いＱ値を有し、高誘電率、
高絶縁抵抗であって、かつ、誘電率の温度係数が小さい
誘電体磁器組成物の本焼成温度を従来のものより約１０
０〜２８０°Ｃ低ドさせた焼結性良好な誘電体磁器組成
物を提供するものである。Therefore, the object of the present invention is to have a high Q value, a high dielectric constant,
The main firing temperature of a dielectric ceramic composition that has high insulation resistance and a small temperature coefficient of dielectric constant is about 10% higher than that of conventional ones.
The object of the present invention is to provide a dielectric ceramic composition with good sinterability and a temperature lowered from 0 to 280°C.
このため、本発明者等は、鋭意研究の結果、ＢａＯ ・
４Ｔｉ０２ ：４５．Ｏｍｏｌ！〜６５ｍｏｌχＮ ｄ
Ｚ Ｏ３： １５．０ＩＩｏｌχ〜５５ｓｏｌχＳｍ
２Ｏ３・ Ｏ〜３０＠０１χ
の合計がｌｏｏｍｏ１％からなる主成分に対して、副成
分としてＭｎＯを０〜０．３ ｗ ｔ％、Ｐ ｂ ５Ｇ
ｅ３Ｏ１１を２ｗｔ％〜２０ ｗ ｔ％添加含有させた
磁器組成物により、上記目的を達成することを見出した
。Therefore, as a result of intensive research, the present inventors discovered that BaO・
4Ti02 :45. Omol! 〜65molχNd
Z O3: 15.0IIolχ~55solχSm
The total of 2O3・O~30@01χ is loomo1% as a main component, and as subcomponents MnO is 0~0.3 wt%, P b 5G
It has been found that the above object can be achieved by a ceramic composition containing e3O11 in an amount of 2 wt% to 20 wt%.
これにより、高誘電率、高絶縁抵抗である１−誘電率の
温度係数が小さく、焼成温度が従来より低いにも拘らず
、焼結性良好な誘電体磁器組成物を提供できる。Thereby, it is possible to provide a dielectric ceramic composition that has a small temperature coefficient of 1-permittivity, which is a high dielectric constant and high insulation resistance, and has good sinterability even though the firing temperature is lower than conventional ones.
本発明の実施例を詳細に説明する。 Examples of the present invention will be described in detail.
本発明の誘電体磁器組成物を得る出発原料として、Ｂａ
ＣＯ３、Ｔｉ０ｇ、Ｎｄｚ０３、Ｓｍｚ０３、ＭｎＣＯ
３、Ｐｂ０２Ｇｃ０２の各わ〕末を用いる。なお、これ
らの原料粉末は純度９５％のＮｄｚ０３を除いて、何れ
も純度９８％以トのものを使用する。As a starting material for obtaining the dielectric ceramic composition of the present invention, Ba
CO3, Ti0g, Ndz03, Smz03, MnCO
3. Use each end of Pb02Gc02. Note that all of these raw material powders used have a purity of 98% or higher, except for Ndz03, which has a purity of 95%.
次に誘電体磁器組成物の主成分となるＢａＣＯ３、Ｔ
ｉ Ｏ２、ＮｄｚＯ３、ＳｍｚＯ３と添加物となるＭｎ
Ｃ０３の各粉末を後掲の第１表の組成範囲となるように
秤量し、これをボールミル中で湿式混合処理する。Next, BaCO3, which is the main component of the dielectric ceramic composition, and T
i O2, NdzO3, SmzO3 and Mn as an additive
Each powder of C03 was weighed so as to have the composition range shown in Table 1 below, and wet-mixed in a ball mill.
さらにこの混合物を脱水乾燥し、直径６０ＩＩｌ−φ、
高さ５０１ｍｍの円柱状に加圧成形し、１１００°Ｃ〜
１２００−Ｃの温度条件で、２時間空気中で仮焼成を行
う。その後、この仮焼成物を更に粉砕する。Further, this mixture was dehydrated and dried, and the diameter was 60IIl-φ.
Pressure molded into a cylindrical shape with a height of 501 mm and heated to 1100°C ~
Temporary firing is performed in air at a temperature of 1200-C for 2 hours. Thereafter, this calcined product is further pulverized.
粉砕粉末に副成分としてＰｂ５Ｇｅ３Ｏ１１を第１表の
組成範囲となるように秤量し、これを再度ボールミル中
で湿式混合処理を行う。Pb5Ge3O11 as an auxiliary component is weighed out to the pulverized powder so as to have a composition within the composition range shown in Table 1, and wet-mixed again in a ball mill.
そして、脱水乾燥後に粘結剤としてポリビニルアルコー
ル（ＰＶＡ）を適当量加え、約３トン／Ｃｍ２の圧力を
加えて直径１６．５ｍ−φ、厚み０゜６−蒙の円板に加
圧成形した後、■・０００〜１２６０℃の温度条件で２
時間本焼成する。After dehydration and drying, an appropriate amount of polyvinyl alcohol (PVA) was added as a binder, and a pressure of about 3 tons/cm2 was applied to form a disc with a diameter of 16.5 m-φ and a thickness of 0°6-mm. After that, ■・2 under the temperature condition of 000 to 1260℃
Fire for an hour.
このようにして得られた各誘電体磁器組成物の両端面に
銀電極を焼付けて磁器コンデンサとする。Silver electrodes are baked onto both end faces of each of the dielectric ceramic compositions thus obtained to form a ceramic capacitor.
この磁器コンデンサ試料の誘電率（εｓ） 、Ｑ。Dielectric constant (εs) of this ceramic capacitor sample, Q.
誘電率の温度係数（Ｔ、Ｃ）ＰＰＭ／”Ｃ１絶縁抵抗（
ＩＲ）Ω等を測定し、得られた結果を第１表に示す。Temperature coefficient of dielectric constant (T, C) PPM/”C1 Insulation resistance (
IR)Ω etc. were measured and the results are shown in Table 1.
第１表において、Ｔ、Ｃは＋２０°Ｃを基準にして、＋
２０℃〜＋８５℃の温度範囲で周波数ｌＫＨ２の条件で
測定した。In Table 1, T and C are based on +20°C, +
Measurements were made at a frequency of lKH2 in a temperature range of 20°C to +85°C.
また、本焼成時の焼成温度及び焼結性についても併記し
た。In addition, the firing temperature and sinterability during main firing are also described.
以下余白
第１表中、試料番号にＯ印を付したものは本発明の範囲
内のものであり、Ｘ印を付したものは本発明の範囲外の
ものである。In Table 1 below, the sample numbers marked with O are within the scope of the present invention, and those marked with X are outside the scope of the present invention.
第１表から、本発明の誘電体磁器組成物では、誘電率ε
３、Ｑ値が高く、絶縁抵抗も高い上に、誘電率の温度係
数Ｔ、Ｃは小さく、しかも焼成温度が低くなっても、焼
結性が良好の」二誘電率が高くなることが明らかである
。From Table 1, it can be seen that in the dielectric ceramic composition of the present invention, the dielectric constant ε
3. In addition to having a high Q value and high insulation resistance, the temperature coefficients of dielectric constant T and C are small, and it is clear that even when the firing temperature is lower, the sinterability is good and the dielectric constant is high. It is.
次に本発明の誘電体磁器組成物の組成範囲の限定理由に
ついて、第１表と第１図を用いて説明する。Next, the reason for limiting the composition range of the dielectric ceramic composition of the present invention will be explained using Table 1 and FIG.
第１図は本発明の誘電体磁器組成物におけるＰｂ５Ｇｅ
３ｏｚの添加量と焼成温度の関係図である。Figure 1 shows Pb5Ge in the dielectric ceramic composition of the present invention.
It is a relationship diagram between the addition amount of 3 oz and the firing temperature.
まず、ＢａＯ・４ＴｉＯｚが４５ｍｏ１％以下では誘電
率ε、が小さく焼結性も悪い（例えば試料Ｎ０１５．１
６参照）。一方、６５ｍｏ１％以上になると、誘電率ε
３が小さくなる（例えば試料Ｎｏｌ参照）。First, when BaO・4TiOz is less than 45 mo1%, the dielectric constant ε is small and the sinterability is poor (for example, sample No.
(see 6). On the other hand, when it becomes 65mo1% or more, the dielectric constant ε
3 becomes smaller (see sample No. 1, for example).
またＮｄ２Ｏ５が１５ｍｏ １％以下では焼成温度が高
くなり、焼結性も悪くなる（例えば試料Ｎｏ７参照）。Furthermore, if Nd2O5 is less than 15mo1%, the firing temperature will be high and the sinterability will be poor (see, for example, sample No. 7).
さらに５５ｍｏ１％以」−では誘電率が低くなり、また
焼成温度も高くなり、焼結性も悪くなる（例えば試料Ｎ
ｏ１５参照）。Furthermore, if the temperature exceeds 55 mo1%, the dielectric constant becomes low, the sintering temperature becomes high, and the sinterability deteriorates (for example, sample N
o15).
ＳｍｚＯ３は、添加物のＭｎＯ同様、全く加えなくても
実用的には問題ないが（例えば試料Ｎ０１０参照）、３
０ｍｏ１％まで加えることによって誘電率ε５が高くな
り、その温度係数Ｔ、 Ｃを小さくすることが出来る
（例えば試料Ｎｏ３．４参照）。しかし、３０ｍｏ１％
を超えると焼成温度が高くなる上に焼結性も劣化する。SmzO3, like the additive MnO, does not cause any practical problems even if it is not added at all (for example, see sample No. 010), but 3
By adding up to 0mo1%, the dielectric constant ε5 becomes high, and its temperature coefficients T and C can be made small (for example, see sample No. 3.4). However, 30mo1%
If it exceeds this, the firing temperature will increase and the sinterability will also deteriorate.
さらにＳｍ２Ｏ３原料自体が高価なため、製品のコスト
が高くなる（例えば試料Ｎ０１４参照）。Furthermore, since the Sm2O3 raw material itself is expensive, the cost of the product increases (see, for example, sample No. 014).
ＭｎＯについても、全く加えなくてもよいが（例えば試
料Ｎｏ５参照）、０．３ｗｔ％まで加えることによって
、誘電率ε５を向上させ、絶縁抵抗ＩＲも増加する（例
えば試料Ｎｏ５−１．５２参照）。しかしＱ、 ３ ｗ
ｔ％を超えると焼結性が悪くなるとともに電気的特性
も劣化する（例えば試料Ｎｏ５−３参照）。Although it is not necessary to add MnO at all (see, for example, sample No. 5), adding up to 0.3 wt% improves the dielectric constant ε5 and increases the insulation resistance IR (see, for example, sample No. 5-1.52). . But Q, 3 w
If it exceeds t%, the sinterability deteriorates and the electrical characteristics also deteriorate (see, for example, sample No. 5-3).
副成分のＰｂ５Ｇｅ３０ｚの添加Ｖと焼成温度の関係は
第１図に示されているが、この図からも明らかな如く、
Ｐ ｂ ５Ｇ ｅ ３Ｏ１１が２ｗｔ％以ドで以上成温
度が１２６０℃以上となり、本発明の目的と合致しない
（例えば試料Ｎｏ５−４参照）。The relationship between the addition V of the subcomponent Pb5Ge30z and the firing temperature is shown in Figure 1, and as is clear from this figure,
When P b 5G e 3O11 is 2 wt % or more, the formation temperature becomes 1260° C. or higher, which does not meet the purpose of the present invention (see, for example, sample No. 5-4).
そして添加量が増加するに従って焼成温度が低くなり、
誘電率ε５も増すが（例えば試料Ｎｏ５５．５−６．５
−７参照）、２０ｗＬ％以上になると、焼成温度は低下
するが、焼結性が悪くなる上、電気的緒特性も劣化し、
緻密な素地の誘電体磁器組成物が得られなくなる。さら
にこの場合、ＧｅＯ２原料が高価なため、製品のコスト
高につながるという問題もある（例えば試料Ｎｏ５−８
参照）。As the amount added increases, the firing temperature decreases,
Although the dielectric constant ε5 also increases (for example, sample No. 55.5-6.5
-7), if it exceeds 20 wL%, the firing temperature will decrease, but the sinterability will deteriorate and the electrical characteristics will also deteriorate.
A dielectric ceramic composition with a dense matrix cannot be obtained. Furthermore, in this case, there is a problem that the GeO2 raw material is expensive, leading to high product costs (for example, sample No. 5-8
reference).
上記実施例に述べた誘電体磁器組成物中に、１゜ａｑ０
３．Ｃｅ０ｑ、Ｐｒ５Ｏ＋＋等を含有していても、同等
の特性が得られる。In the dielectric ceramic composition described in the above example, 1゜aq0
3. Even if it contains CeOq, Pr5O++, etc., the same characteristics can be obtained.
なお、第２図は本発明の誘電体磁器組成物の主成分の組
成範囲を示す成分回である。この主成分の範囲内に副成
分としてＭ ｎ Ｏを０〜０．３ｗｔ％、Ｐｂ５Ｇｅ３
Ｏ１１を２〜２０ｗｔ％添加含有させたものが本発明で
ある。Incidentally, FIG. 2 is a composition diagram showing the composition range of the main components of the dielectric ceramic composition of the present invention. Within the range of this main component, 0 to 0.3 wt% of MnO and Pb5Ge3 are added as subcomponents.
In the present invention, O11 is added in an amount of 2 to 20 wt%.
本実施例においては主成分の各比率をｍｏ１％で表記し
たが、これらをｗｔ％に換算すると、下記のようになる
。In this example, each ratio of the main components was expressed as mo1%, but when converted to wt%, it becomes as follows.
ＢａＯ：１７．１８ｗｔχ〜２３．３７ｉ１ｔχＴｉ０
ｚ ： ３５．８２ｗｔχ〜４８．７２ｉｅｔχＳｍｚ
Ｏａ ： Ｏ〜２６．０５ｗｔχＮｄｚＯａ ： １１
．８０〜４６．５１ｗｔχ〔発明の効果〕
本発明の如き組成の誘電体磁器組成物を用いることによ
り、焼成温度が１０００〜１１８０°Ｃと比較的低温度
で焼結し、誘電率が８０〜１０４と高く、またＱ値も高
く誘電率の温度係数も十分低くすることが出来、温度補
償用誘電体磁器組成物として大変有用である。BaO: 17.18wtχ~23.37i1tχTi0
z: 35.82wtχ~48.72ietχSmz
Oa: O~26.05wtχNdzOa: 11
．． 80 to 46.51 wtχ [Effect of the invention] By using the dielectric ceramic composition of the present invention, the sintering temperature is relatively low, 1000 to 1180°C, and the dielectric constant is 80 to 104. It also has a high Q value and a sufficiently low temperature coefficient of dielectric constant, making it very useful as a dielectric ceramic composition for temperature compensation.
また焼成温度を従来より１５０°Ｃ〜３５０℃も低くす
ることが出来るため、Ａｇ−Ｐｄ合金等を内部電極とし
て用いた積層チップコンデンサ等を低コストで製造する
ことが可能である。Furthermore, since the firing temperature can be lowered by 150° C. to 350° C. compared to the conventional method, it is possible to manufacture multilayer chip capacitors using Ag-Pd alloy or the like as internal electrodes at low cost.
第１図は本発明の誘電体磁器組成物のＰｂ５Ｇｅ３Ｏ１
１添加量と焼成温度の関係図、第２図は本発明の主成分
の組成範囲を示す三成分系図である。Figure 1 shows Pb5Ge3O1 of the dielectric ceramic composition of the present invention.
Figure 2 is a three-component system diagram showing the composition range of the main components of the present invention.
Claims (1)
として、ＭｎＯを０〜０．３ｗｔ％、Ｐｂ＿５Ｇｅ＿３
Ｏ＿１＿１を２〜２０ｗｔ％添加含有したことを特徴と
する誘電体磁器組成物。(1) As a dielectric ceramic composition, a main component consisting of 100 parts in total of BaO・4TiO_2 45 mol% to 65 mol% Nd_2O_3 15 mol% to 55 mol% Sm_2O_3 0 to 30 mol% or more, and 0 parts of MnO as a subcomponent. ~0.3wt%, Pb_5Ge_3
A dielectric ceramic composition characterized by containing O_1_1 in an amount of 2 to 20 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63294099A JP2788459B2 (en) | 1988-11-21 | 1988-11-21 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63294099A JP2788459B2 (en) | 1988-11-21 | 1988-11-21 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02141472A true JPH02141472A (en) | 1990-05-30 |
| JP2788459B2 JP2788459B2 (en) | 1998-08-20 |
Family
ID=17803276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63294099A Expired - Fee Related JP2788459B2 (en) | 1988-11-21 | 1988-11-21 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2788459B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06126004A (en) * | 1992-10-15 | 1994-05-10 | Royal Korekushiyon:Kk | Golf club head |
| JP2002338342A (en) * | 2001-05-17 | 2002-11-27 | Aiomu Technology:Kk | Dielectric ceramic composition |
-
1988
- 1988-11-21 JP JP63294099A patent/JP2788459B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06126004A (en) * | 1992-10-15 | 1994-05-10 | Royal Korekushiyon:Kk | Golf club head |
| JP2002338342A (en) * | 2001-05-17 | 2002-11-27 | Aiomu Technology:Kk | Dielectric ceramic composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2788459B2 (en) | 1998-08-20 |
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