JPS5921067A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5921067A
JPS5921067A JP13140782A JP13140782A JPS5921067A JP S5921067 A JPS5921067 A JP S5921067A JP 13140782 A JP13140782 A JP 13140782A JP 13140782 A JP13140782 A JP 13140782A JP S5921067 A JPS5921067 A JP S5921067A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
adhered
psg
sio2
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13140782A
Inventor
Nobuo Sasaki
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To enable to manufacture by self-alignment system by relaxing short channel effect by a method wherein a source and drain having a shallow junction is provided in an MOS-FET. CONSTITUTION:A PSG film 11 is adhered on an insulation plate 10 by chemical vapor growing method, a polycrystalline Si film is adhered on the upper surface thereof, a gate electrode 12 is patterned, and thereafter an SiO2 film 13 is producted by thermal oxidation treatment. This SiO2 film 13 is a gate insulation film. Next, the second polycrystalline Si film 20 is adhered on the upper surface thereof and patterned, and further the second SiO2 film 17 is produced on the surface thereof. After the second polycrystalline Si film 20 is changed into an Si crystal film 20' by the irradiation of argon laser, it is changed into a P type layer by ion implantation of boron. After forming two windows through the SiO2 film 17, the second PSG film 18 is adhered over the entire surface by CVD method. Then, phosphorus is diffused from up and down PSG film 11 and 18 into the P type Si crystal film 20' by heat treatment, and accordingly the N type source region 15 and drain region 16 are formed. The P type Si crystal film 20' turns a channel region 14. A window is opened through the PSG film 18, and then an Al electrode 19 is formed.
JP13140782A 1982-07-27 1982-07-27 Semiconductor device and manufacture thereof Pending JPS5921067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13140782A JPS5921067A (en) 1982-07-27 1982-07-27 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13140782A JPS5921067A (en) 1982-07-27 1982-07-27 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5921067A true true JPS5921067A (en) 1984-02-02

Family

ID=15057246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13140782A Pending JPS5921067A (en) 1982-07-27 1982-07-27 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5921067A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521794A (en) * 1991-02-04 1993-01-29 Semiconductor Energy Lab Co Ltd Dieleciric gate type field effect semiconductor device and fabrication thereof
JPH05160153A (en) * 1991-12-03 1993-06-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH05267667A (en) * 1991-08-23 1993-10-15 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JPH05283694A (en) * 1991-08-23 1993-10-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH0653509A (en) * 1991-05-11 1994-02-25 Semiconductor Energy Lab Co Ltd Insulated gate field effect semiconductor device and fabrication thereof
JPH06196500A (en) * 1991-05-16 1994-07-15 Semiconductor Energy Lab Co Ltd Insulated gate field effect semiconductor device and manufacture thereof
JPH06244200A (en) * 1991-03-06 1994-09-02 Semiconductor Energy Lab Co Ltd Insulating gate type field effect semiconductor device and its manufacture
JPH08248445A (en) * 1995-12-22 1996-09-27 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
US5681760A (en) * 1995-01-03 1997-10-28 Goldstar Electron Co., Ltd. Method for manufacturing thin film transistor
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6130120A (en) * 1995-01-03 2000-10-10 Goldstar Electron Co., Ltd. Method and structure for crystallizing a film
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126971A (en) * 1980-03-10 1981-10-05 Fujitsu Ltd Thin film field effect element
JPS57128957A (en) * 1981-02-04 1982-08-10 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126971A (en) * 1980-03-10 1981-10-05 Fujitsu Ltd Thin film field effect element
JPS57128957A (en) * 1981-02-04 1982-08-10 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521794A (en) * 1991-02-04 1993-01-29 Semiconductor Energy Lab Co Ltd Dieleciric gate type field effect semiconductor device and fabrication thereof
JPH06244200A (en) * 1991-03-06 1994-09-02 Semiconductor Energy Lab Co Ltd Insulating gate type field effect semiconductor device and its manufacture
JPH0653509A (en) * 1991-05-11 1994-02-25 Semiconductor Energy Lab Co Ltd Insulated gate field effect semiconductor device and fabrication thereof
US6555843B1 (en) 1991-05-16 2003-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH06196500A (en) * 1991-05-16 1994-07-15 Semiconductor Energy Lab Co Ltd Insulated gate field effect semiconductor device and manufacture thereof
US6017783A (en) * 1991-05-16 2000-01-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device using an insulated gate electrode as a mask
JPH05267667A (en) * 1991-08-23 1993-10-15 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JPH05283694A (en) * 1991-08-23 1993-10-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US5962870A (en) * 1991-08-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US7821011B2 (en) 1991-08-26 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
JPH05160153A (en) * 1991-12-03 1993-06-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6610998B1 (en) 1995-01-03 2003-08-26 Goldstar Electron Co., Ltd. Method and structure for crystallizing a film
US5681760A (en) * 1995-01-03 1997-10-28 Goldstar Electron Co., Ltd. Method for manufacturing thin film transistor
US6130120A (en) * 1995-01-03 2000-10-10 Goldstar Electron Co., Ltd. Method and structure for crystallizing a film
JPH08248445A (en) * 1995-12-22 1996-09-27 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device

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