JPH04111361A - Thin-film semiconductor device - Google Patents

Thin-film semiconductor device

Info

Publication number
JPH04111361A
JPH04111361A JP22977390A JP22977390A JPH04111361A JP H04111361 A JPH04111361 A JP H04111361A JP 22977390 A JP22977390 A JP 22977390A JP 22977390 A JP22977390 A JP 22977390A JP H04111361 A JPH04111361 A JP H04111361A
Authority
JP
Japan
Prior art keywords
hydrogen atoms
formed
silicon nitride
layer
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22977390A
Inventor
Shin Shimizu
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP22977390A priority Critical patent/JPH04111361A/en
Publication of JPH04111361A publication Critical patent/JPH04111361A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To keep the high content of hydrogen atoms in a polycrystalline silicon layer even after an element is formed by a method wherein a silicon nitride film is formed at the lower layer of the polycrystalline silicon layer.
CONSTITUTION: A silicon nitride film 12 and a polycrystalline silicon layer 14 are formed on a substrate 10. A silicon nitride film 16 is formed again on it; in addition, an oxide film 18 and a gate electrode 20 are formed. Then, ions are implanted; after that, an annealing operation is executed. At this time, hydrogen atoms contained in the silicon layer 14 are going to be separated by heat. However, since the silicon nitride films 12, 16 formed at its upper layer and its lower layer function to restrain the hydrogen atoms from being diffused, it is possible to prevent the hydrogen atoms from being separated from the silicon layer 14. In addition, since very many hydrogen atoms are contained in the silicon nitride films 12, 16, the hydrogen atoms are replenished into the silicon layer 14 from them and a hydrogen atoms density becomes very high.
COPYRIGHT: (C)1992,JPO&Japio
JP22977390A 1990-08-30 1990-08-30 Thin-film semiconductor device Pending JPH04111361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22977390A JPH04111361A (en) 1990-08-30 1990-08-30 Thin-film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22977390A JPH04111361A (en) 1990-08-30 1990-08-30 Thin-film semiconductor device

Publications (1)

Publication Number Publication Date
JPH04111361A true JPH04111361A (en) 1992-04-13

Family

ID=16897452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22977390A Pending JPH04111361A (en) 1990-08-30 1990-08-30 Thin-film semiconductor device

Country Status (1)

Country Link
JP (1) JPH04111361A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6601308B2 (en) 2002-01-02 2003-08-05 Bahram Khoshnood Ambient light collecting bow sight

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film
US8330165B2 (en) 1994-06-09 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6601308B2 (en) 2002-01-02 2003-08-05 Bahram Khoshnood Ambient light collecting bow sight
USRE39686E1 (en) * 2002-01-02 2007-06-12 Bahram Khoshnood Ambient light collecting bow sight

Similar Documents

Publication Publication Date Title
US5064775A (en) Method of fabricating an improved polycrystalline silicon thin film transistor
JPH0216763A (en) Manufacture of semiconductor device
JPS6070760A (en) Semiconductor memory device
JPH04158570A (en) Structure of semiconductor device and manufacture thereof
JPH0472763A (en) Semiconductor device and manufacture thereof
US5187559A (en) Semiconductor device and process for producing same
JPS5748246A (en) Manufacture of semiconductor device
JPS5766674A (en) Semiconductor device
JPH03165575A (en) Thin film transistor and manufacture thereof
JPS62130522A (en) Manufacture of semiconductor device
JPS63166220A (en) Manufacture of semiconductor device
JPS6410644A (en) Manufacture of semiconductor device
JPH01109748A (en) Production of semiconductor device
JPS6031232A (en) Manufacture of semiconductor substrate
JPH03222336A (en) Manufacture of semiconductor device
JPS63293850A (en) Manufacture of semiconductor device
JPS62188375A (en) Semiconductor integrated circuit device
JPS63122163A (en) Semiconductor integrated circuit device
JPH02109325A (en) Manufacture of semiconductor device
JPH02219253A (en) Manufacture of semiconductor integrated circuit device
JPS63217657A (en) Manufacture of semiconductor substrate
JPH0395939A (en) Manufacture of semiconductor device
JPH04171979A (en) Semiconductor device and manufacture thereof
JPH04118936A (en) Manufacture of semiconductor device
JPS6184868A (en) Nonvolatile semiconductor memory device