JPS59208937A - Drive controller of semiconductor switch element - Google Patents
Drive controller of semiconductor switch elementInfo
- Publication number
- JPS59208937A JPS59208937A JP8168483A JP8168483A JPS59208937A JP S59208937 A JPS59208937 A JP S59208937A JP 8168483 A JP8168483 A JP 8168483A JP 8168483 A JP8168483 A JP 8168483A JP S59208937 A JPS59208937 A JP S59208937A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- capacitor
- charging
- resistance
- switch element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明d、インパークやチョッパ等の半解体スイッチ素
子の駆動制御装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention d relates to a drive control device for a half-disassembled switch element such as an impark or a chopper.
第1図に半導体スイッチ素子で構成された従来の交流拭
動!?U i駆動用インバータを示す。Figure 1 shows a conventional AC wiping motion composed of semiconductor switch elements! ? The inverter for driving Ui is shown.
第1図において、匣流奄源1の正、負各母線PN間VC
それぞれiθ−列に接続されたMO8F、tl’I”か
らナル半導体スイッチ素子MU 、 M、V 、 MW
、 MX 、 MY 。In Figure 1, the VC between the positive and negative bus lines PN of the box flow Amogen 1
Null semiconductor switch elements MU, M, V, MW from MO8F, tl'I'' connected to the iθ-column, respectively
, MX, MY.
MZで構成している。半解体スイッチ素子としてはジャ
イアントトランジスタ(GTR)を用いてもよいが、以
下MO8FETを使用した場合について説明する。MO
SFETの各端子においてGはゲート、Dはドレイン、
Sはソースである。It is composed of MZ. Although a giant transistor (GTR) may be used as the half-disassembled switch element, a case where an MO8FET is used will be described below. M.O.
At each terminal of SFET, G is the gate, D is the drain,
S is the source.
各MO8FETはスナバ−コンデンサO8,〜C86ス
ナバー抵抗R8l〜几S6よシなるスナバ−回路がD−
8間に接続されておシ、G−8間((は過電圧防止用ツ
ェナーダイオードDZ、〜DZ6および抵抗RG、〜I
(G、が接続されている。Each MO8FET has a snubber circuit D-
8 and G-8 (((is the overvoltage prevention Zener diode DZ, ~DZ6 and the resistor RG, ~I
(G, is connected.
Qnハバツファコンデンサである。2は誘導電動機、同
期電TJJJ機などの交流電動機である。It is a Qn buffer capacitor. 2 is an AC motor such as an induction motor or a synchronous electric TJJJ machine.
第2図に各MO8FETの駆動回路を示す。第1図と同
一のものは同符号を付けた。FIG. 2 shows a drive circuit for each MO8FET. Components that are the same as those in FIG. 1 are given the same symbols.
インバータを構成するMO8FE’l”と制御回路は一
般的に電位が等しくないので、各MO8FETを制御回
路が直接駆動することができない。そのため、各M0.
19FETと電位が等しい独立した駆動電源3を持って
おシ、制御回路からの信号はホトカソグラPC,2どで
絶縁する方式が一般に用いられている。制御回路は周知
のものでよく特に図示してない。なおMX 、 M ’
Y 、 tA Zは駆動電源を共通にすることも可能で
ある。’1.F’、OFはMU駆動亀源3のフィルター
抵抗、フイルターコンデンザでちる。Since the potentials of the MO8FE'l'' constituting the inverter and the control circuit are generally not equal, the control circuit cannot directly drive each MO8FET.
Generally, a system is used in which an independent drive power supply 3 having the same potential as the 19FET is provided, and signals from the control circuit are isolated by a photocassette PC, 2, or the like. The control circuit is well known and is not specifically illustrated. Note that MX, M'
It is also possible to use a common driving power source for Y, tA, and Z. '1. F' and OF are the filter resistance and filter capacitor of the MU drive turtle source 3.
次に、簡単に八40S PETMUのオン、オフff+
ll f+M]について1説明する。ツ1示しない制御
装置からのへ(U制御信号によシホトカツプラPC,の
ホトダイオードPD、に電流を流す。すると、ホトカッ
プラPC,のホトトランジスタPT、がオンし、七の出
力はレベル゛OIとな5 、NOT回路4の出力はレベ
ルtt 、 pとな9、入力電流8711限抵抗几2を
通して、MO8F E T r、vuのゲー)Uに電圧
を供給す◇。この場合入力電流はMOS L’ ID
Tの入力′G量苓:充亀すゐわずかの時間のみ流れ、そ
れ以後はほとんど′電流は流れない。MO8FEi’
IVUをオフするVC幻、ホトカップラPC3,○ホト
ダイオードPD、yc供結する′−5流をしや…rフッ
−。ホトカップラPC,のホトダイオードPD1の′電
流がしや…1されるとホトトランジスタPT、の出力が
レベル″、LLとなシNOT回路4の出力はレベル″0
′となり、へ408 FETはオフする。Next, easily turn on and off the 840S PETMU ff+
ll f+M] will be explained. A current is caused to flow through the photodiode PD of the photocoupler PC by the control signal from the control device (not shown).Then, the phototransistor PT of the photocoupler PC is turned on, and the output of the photocoupler PC becomes the level "OI". 5. The output of the NOT circuit 4 is at the level tt, p. 9. The input current 8711 is passed through the limiting resistor 几2, and the voltage is supplied to the MO8FETr, vu gate)U◇. In this case, the input current is MOS L' ID
T's input current flows only for a short time, and after that, almost no current flows. MO8FEi'
VC illusion to turn off IVU, photocoupler PC3, ○ photodiode PD, yc connection '-5 style... r hoo... When the current of the photodiode PD1 of the photocoupler PC becomes 1, the output of the phototransistor PT goes to the level "LL", and the output of the NOT circuit 4 goes to the level "0".
', and the 408 FET turns off.
この場合にNOT回路に流れる電流はMO8FETの入
力容量の電荷が放電するわずかの時間のみ流れそれ以後
はほとんど電流が流れない。つまり、MOSFETのゲ
ート電流は平均的には非常に少ない電流しか流れない。In this case, the current flowing through the NOT circuit only flows for a short time when the charge in the input capacitance of the MO8FET is discharged, and after that, almost no current flows. In other words, only a very small amount of current flows on average as the gate current of the MOSFET.
しかし、少ない容量の電源でらっても、制御回路と絶縁
した電源としなければならないので複雑とな9まy’c
高価になる。However, even if a power supply with a small capacity is used, the power supply must be isolated from the control circuit, making it complicated.
Becomes expensive.
イオードi4コンデンザC1でMU I駆動電源を得る
回路である。同様にMXの1駆動電源も抵抗R0、ツェ
ナーダイオードDZ2AコンデンサC2より作る。This is a circuit that obtains the MU I drive power using the i4 diode capacitor C1. Similarly, the MX 1 drive power source is made from a resistor R0, a Zener diode DZ2A capacitor C2.
次に動作原理について第3図にそって説明する。Next, the principle of operation will be explained with reference to FIG.
第1図、第2図と同一のもの罠は同符号を付けた。Traps that are the same as those in Figures 1 and 2 are given the same symbols.
単純にするため、MUとMXとの直列回路について説明
する。なお、MVとMY、、MWとM Zとの直列回路
も全く同一の動作を行なう。For simplicity, a series circuit of MU and MX will be described. Incidentally, the series circuits of MV and MY, MW and MZ also perform exactly the same operation.
一般にインバータとして動作させた時には、MOSFE
Tへ40がオンのときはMXがオフ、MUがオフのとき
にはMXがオンとなる。いi、MUがオフで1,4Xが
オンの状ににを考えると、直流電源1の正側P→抵抗1
モ、→ダイオード1)、→コンデンサC8→MXの経路
を通して電流が流れコンデンサC1に電荷がたまる。こ
の時、コンデンサCHVCは並列にツェナーダイオード
D21人 が接続しであるので、コンデンサC7の′電
圧tj:ツエナーダイオードDZIAノツエナー:比圧
にクランプされる。つマf)、:17デンサC7に冗は
された゛、ル圧をM Uの駆動li:源として使用する
ものである。なお、ダイオードJ〕5はMUがオンした
時のコンデンサCIの放′1区防止用である。また、抵
抗1も7す:Aμ動時へ4.Ij、MX:ともオフのと
きコンデンサCIの充電を偏実にするだめの冗砥用抵抗
である。M Xのにル(動電源は抵抗R,を通してコン
デンサ(j2V7c充電された1d圧を使用する。Generally, when operated as an inverter, MOSFE
When 40 to T is on, MX is off, and when MU is off, MX is on. If we consider that MU is off and 1,4X is on, the positive side P of DC power supply 1 → resistor 1
Current flows through the path of Mo, → diode 1), → capacitor C8 → MX, and charge is accumulated in capacitor C1. At this time, since the capacitor CHVC is connected in parallel with the Zener diode D21, it is clamped to the voltage tj of the capacitor C7: Zener diode DZIA no Zener: specific pressure. The pressure applied to the capacitor C7 is used as a driving source for the MU. Note that the diode J]5 is used to prevent the capacitor CI from being discharged when the MU is turned on. Also, resistor 1 is also set to 7: Aμ when moving 4. Ij, MX: Both are redundant resistors that are used to charge the capacitor CI unevenly when the capacitor CI is off. M
しかし、巨流電源IKバッテリや太陽電池を使用する1
易合を考えると、バッテリを使用した場合は充電の状態
によシ直流電圧が大さく変動する。However, 1 using a huge current power supply IK battery or solar battery
Considering the convenience, when a battery is used, the DC voltage varies greatly depending on the state of charge.
′また、太陽電池を使用した場合には日照の条件でやは
り直流゛I梶圧は大きく変動する。直流電圧が低くなれ
ばコンデンサa、 、a2の“電圧を保障するVCは抵
抗R,、R,、の値を小さくしなければならない。しか
し抵抗R,5,R,を小さくすると直流電圧が大きくな
った場合抵抗IL、、几。の電力損失が増加する問題が
ある。'Furthermore, when solar cells are used, the direct current pressure varies greatly depending on the sunlight conditions. If the DC voltage becomes lower, the VC that guarantees the voltage of capacitors a, , a2 must reduce the value of the resistor R, , R, . However, if the resistor R, 5, R, is made smaller, the DC voltage increases. If this happens, there is a problem that the power loss of the resistors IL, ., ., increases.
本発明の目的は上記問題VC鑑みてなされたもので、電
圧が大きく変動する電源から半導体スイッチ素子の駆動
電源を得るとき、抵抗の・【d、力損失を増加させるこ
となく安定して確実に半導体スイッチ素子を駆動できる
半導体スイッチ素子の駆動側i叶装置を得ることにある
。The purpose of the present invention was made in view of the above-mentioned problem of VC, and when obtaining a driving power source for a semiconductor switching element from a power source whose voltage fluctuates greatly, it is possible to stably and reliably obtain the driving power of a semiconductor switching element from a power source whose voltage fluctuates greatly. An object of the present invention is to obtain a drive-side device for a semiconductor switch element capable of driving the semiconductor switch element.
本発明は直列抵抗を介してコンデンサに電圧を印加し、
このコンデンサの充’Li:t W圧を半導体スイッチ
素子の駆動電源とする装置に於て、前記充電電圧が所定
の値以下のとき電圧低下検知信号を得るコンパレータと
、前記電圧低下検知信号Vこよシ前記直列抵抗の一部を
短絡するスイッチ回路を設は前記直列抵抗の電力損失を
減少する様にした半導体スイッチ素子の駆動制御装置で
ある。The present invention applies voltage to a capacitor through a series resistor,
In a device that uses the charging voltage of this capacitor as a driving power source for a semiconductor switching element, there is provided a comparator that obtains a voltage drop detection signal when the charging voltage is below a predetermined value, and a comparator that obtains a voltage drop detection signal when the charging voltage is below a predetermined value. A drive control device for a semiconductor switch element is provided with a switch circuit that short-circuits a part of the series resistor to reduce power loss of the series resistor.
以下、本発明の一実施例を第4図に従って説明する。第
3図と同一のものには同符号を付は説明を省略する。第
3図と比較し、抵抗I(,8,R,、R・10゜RlH
、R+12 、 R13、ホトカップ−y PC!3.
PC,、ツェナーダイオードI)Z3A DZ4A
、、ポリコーム抵抗VTL+。An embodiment of the present invention will be described below with reference to FIG. Components that are the same as those in FIG. 3 are denoted by the same reference numerals, and explanations thereof will be omitted. Comparing with Fig. 3, the resistance I(,8,R,,R・10°RlH
, R+12, R13, Photocup-y PC! 3.
PC, Zener diode I) Z3A DZ4A
,, Polycomb resistor VTL+.
VB2、コンハレータロ 、 7ヲ追加する。Add VB2, Conharataro, and 7.
次に動作原理について説明する。直流電源1の電圧が高
い鳴合にはコンデンサc1の電圧はツェナーダイオード
DZIA のツェナー電圧となシ高い。Next, the operating principle will be explained. When the voltage of the DC power supply 1 is high, the voltage of the capacitor c1 is as high as the Zener voltage of the Zener diode DZIA.
コンパレータ6の非反転入力電圧はコンデンサcIの電
圧に比例するので、コンデンサC7の電圧が高いトキに
はコノパレータ6の反転入力(ツェナーダイオードDZ
3A のツェナー電圧)よシ高電圧に調整しておくこ
とにょ9、コンパレータ6の出力はレベル゛1“となυ
ホトカップラPC,のホトダイオードP1)3に1d流
が流れない。ホトダイオードPD3に電流が流れないと
きにはホトトランジスタPTsがオフとなり、コンデン
サC8の充電電流は抵抗rt、、iも、を通って充電す
ることになる。つまり直流′電圧が高い時には充電抵抗
が而くなるので抵抗損失が小さい。Since the non-inverting input voltage of comparator 6 is proportional to the voltage of capacitor cI, when the voltage of capacitor C7 is high, the inverting input of conoparator 6 (Zener diode DZ
By adjusting the voltage to a higher voltage than the Zener voltage of 3A, the output of comparator 6 will be at level ``1''.
1d current does not flow through the photodiode P1)3 of the photocoupler PC. When no current flows through the photodiode PD3, the phototransistor PTs is turned off, and the charging current of the capacitor C8 also charges through the resistors rt, , i. In other words, when the DC' voltage is high, the charging resistance becomes small, so the resistance loss is small.
■α流′市電源の電圧が低下すると、コンデンサC1の
電圧もツェナーダイオードDz+A のツェナー電圧
より低下する。コンデンサC3の電圧が低下するとコン
パレータ6の非反転入力電圧が反転入力より低くなるよ
うに設定しておくので、コンパレータ6の出力はレベル
′0“となシホトダイオードPD3に電流が流れ、ホト
トランジスタPT3がオンする。ホトトランジスタPT
3がオンすると、コンデンサCIの充電抵抗はR5のみ
となシ゛充成電流が増加し、コンデンサC8の′成用を
上昇させることができる。すなわち、コンデンサC1の
電圧に従ってホトトランジスタPT3によるスイッチ回
路が動作して充電抵抗を切換え常Vこ良好な充電抵抗と
なる様に制御しでいる。(a) When the voltage of the city power supply decreases, the voltage of the capacitor C1 also decreases below the Zener voltage of the Zener diode Dz+A. Since the non-inverting input voltage of the comparator 6 is set to be lower than the inverting input when the voltage of the capacitor C3 decreases, the output of the comparator 6 is at level '0''. Current flows through the photodiode PD3, and the phototransistor PT3 turns on.Phototransistor PT
When capacitor C1 is turned on, R5 is the only charging resistor of capacitor CI, so the charging current increases and the performance of capacitor C8 can be increased. That is, a switch circuit including a phototransistor PT3 is operated in accordance with the voltage of the capacitor C1 to switch the charging resistor so as to maintain a good charging resistor at a constant voltage of V.
本発明rvよれば電圧が大きく変動する電源から半導体
スイッチ素子の駆動電源を得ても抵抗の電力損失を増大
させることなく安定した駆動電源を得る半導体スイッチ
素子の駆動制御装置を提供することができる。According to the rv of the present invention, it is possible to provide a drive control device for a semiconductor switch element that obtains a stable drive power source without increasing the power loss of the resistor even if the drive power source for the semiconductor switch element is obtained from a power source whose voltage fluctuates greatly. .
第1図は半導体スイッチ素子としてMOSFETを用い
たインバータ主回路樋成図、第2図はMOSFET
の駆動回路図、第3図は主回路電源から駆動電源を得る
様に溝底したMOSFETの駆動制御回j洛図、第4図
は本発明の一実施例による半導体スイッチ素子の駆動制
御装置の回路構成図である。
■・・1M流電源 2・・交流′成動機3・・・半
導体スイッチ素子の駆動電源4.5・・No’r回路
6.7・・・コンパレータPO4〜P04・・ホトカッ
プラ
(73]7)代理人升埋士 則 近 1g 佑 (ほ
か1名)第3図
P
MX制λ卯f9号
第4図
MX 化112番Pイ菖号Figure 1 is an inverter main circuit diagram using MOSFET as a semiconductor switch element, Figure 2 is a MOSFET.
3 is a drive control circuit diagram of a MOSFET with a groove bottom so as to obtain drive power from the main circuit power supply, and FIG. 4 is a drive control circuit diagram of a semiconductor switch element according to an embodiment of the present invention. FIG. 3 is a circuit configuration diagram. ■...1M current power supply 2...AC' driving power source 3...Semiconductor switch element drive power supply 4.5...No'r circuit
6.7... Comparator PO4~P04... Photocoupler (73] 7) Proxy Masujishi Nori Chika 1g Yu (and 1 other person) Fig. 3 P MX system λU f9 No. 4 Fig. 4 MX No. 112 P Irisho
Claims (1)
デンサの光電成圧を半解体スイッチ素子の駆動電源とす
る装置に於て、前記充Ti、5iL圧が所足の値以1の
とき電圧低下検知信号を得るコンパレータと、前記電圧
低下検知信号によシ前記直列、抵抗の一部を短絡するス
イッチ回路を設りたことを特徴とする半導体スイッチ素
子の駆動制御装置。In a device in which a voltage is applied to a capacitor through a series resistor and the photoelectric voltage of this capacitor is used as a driving power source for a half-disassembled switch element, the voltage decreases when the charged Ti, 5iL pressure is 1 or more than the required value. 1. A drive control device for a semiconductor switching element, comprising: a comparator for obtaining a detection signal; and a switch circuit for shorting a part of the series resistor based on the voltage drop detection signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8168483A JPS59208937A (en) | 1983-05-12 | 1983-05-12 | Drive controller of semiconductor switch element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8168483A JPS59208937A (en) | 1983-05-12 | 1983-05-12 | Drive controller of semiconductor switch element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59208937A true JPS59208937A (en) | 1984-11-27 |
Family
ID=13753178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8168483A Pending JPS59208937A (en) | 1983-05-12 | 1983-05-12 | Drive controller of semiconductor switch element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59208937A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5475333A (en) * | 1991-05-10 | 1995-12-12 | Fuji Electric Co., Ltd. | Built-in drive power-source semiconductor device |
DE102016207932A1 (en) * | 2016-05-09 | 2017-11-09 | Bayerische Motoren Werke Aktiengesellschaft | Device with an adjustable capacitive unit for an inductive charging system |
-
1983
- 1983-05-12 JP JP8168483A patent/JPS59208937A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5475333A (en) * | 1991-05-10 | 1995-12-12 | Fuji Electric Co., Ltd. | Built-in drive power-source semiconductor device |
DE102016207932A1 (en) * | 2016-05-09 | 2017-11-09 | Bayerische Motoren Werke Aktiengesellschaft | Device with an adjustable capacitive unit for an inductive charging system |
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