JPS5920471A - Stripping agent - Google Patents
Stripping agentInfo
- Publication number
- JPS5920471A JPS5920471A JP12757182A JP12757182A JPS5920471A JP S5920471 A JPS5920471 A JP S5920471A JP 12757182 A JP12757182 A JP 12757182A JP 12757182 A JP12757182 A JP 12757182A JP S5920471 A JPS5920471 A JP S5920471A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- stripping
- stripping agent
- agent
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 20
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 claims abstract description 6
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 claims abstract description 5
- -1 EDTA compound Chemical class 0.000 claims abstract 3
- 229910052709 silver Inorganic materials 0.000 abstract description 11
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 2
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 239000002253 acid Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 101100234244 Arabidopsis thaliana KDTA gene Proteins 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- WTHXTWHYLIZJBH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O WTHXTWHYLIZJBH-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は剥離剤、特に銀、銅、金等の剥離に好適な剥離
剤に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a stripping agent, particularly a stripping agent suitable for stripping silver, copper, gold, etc.
従来既知の剥離剤には種々のタイプのものがあるけれど
も、そのいずれもが液の管理が複雑でしかも剥離した金
属の回収が大変なものである。例えば銀メッキ処理に於
いては素地に銅ストライクメッキ金子め施しその上に本
メッキとして銀メッキを施し次の剥離工程では銀メッキ
の施されていない銅ストライクメッキの部分を剥離剤を
用いて剥離するようにしているが、従来の種々の剥離剤
を使用すると本メツキ部分の光沢が落ちていわば半光沢
乃至は無光沢に近（なり、その分水メッキの性状が悪く
なるという不具合がある。これは銅ストライクのみなら
ず銀本メッキも剥離されるからであり、このため従来の
銀メッキ処理では後処理での剥離を想定して予め銀本メ
ッキをその分厚くメッキする必要があり、しかも剥離し
た鋏の回収は液のろ過。Although there are various types of conventionally known stripping agents, all of them require complicated liquid management and are difficult to recover the stripped metal. For example, in silver plating, copper strike plating is applied to the substrate, silver plating is applied on top of it as main plating, and in the next peeling process, the parts of the copper strike plating that are not silver plated are peeled off using a release agent. However, when various conventional stripping agents are used, the gloss of the main plating part decreases and becomes almost semi-glossy or matte, which causes the problem that the properties of the water plating deteriorate. This is because not only the copper strike but also the main silver plating is peeled off.For this reason, in conventional silver plating treatment, it is necessary to plate the main silver plating thickly in advance in anticipation of peeling in post-processing, and furthermore, it is necessary to plate the main silver plating thickly in advance, assuming that it will peel off in post-processing. The collected scissors are collected by filtration of the liquid.
目詰り対策等と共に液の管理をより一層複雑なものとし
ている。In addition to countermeasures against clogging, liquid management becomes even more complicated.
本発明はこのような従来の不具合に着目してなされたも
ので、キレート剤を含有することにより剥離させたくな
い金属（例えば銅ストライクメッキ上の銀メッキ）の剥
離速度を抑制することによシ上記従来の不具合を解決せ
んとしている。The present invention has been developed by focusing on these conventional problems, and contains a chelating agent to suppress the peeling speed of metals that should not be peeled off (for example, silver plating on copper strike plating). We are trying to solve the above conventional problems.
具体的には０本発明に係る剥離剤はシアン化カリウム又
はシアン化ナトリウム、アルキルベンゼンスルフォン酸
、及びキレート剤を含んで成るものであり、キレート剤
としてはＫＤＴＡ（エチレ／′）アミン四酢酸）化合物
が好適である。Specifically, the stripping agent according to the present invention comprises potassium cyanide or sodium cyanide, an alkylbenzenesulfonic acid, and a chelating agent, and the preferred chelating agent is a KDTA (ethyle/')aminetetraacetic acid) compound. It is.
この剥離剤の液組成の例としては、以下の如きものがあ
る。Examples of the liquid composition of this stripping agent are as follows.
（例１）
シアン化ナトリウム １０〜５０９／ｌ（好ましくは２
５９７１）アルキルベンゼンスルフ
オン酸 １０〜５０９／ＩＩｃ
ｓ １８９／１）ＫＤＴＡ ２Ｎａ Ｏ
，２−１０？／ｌ（Ｉ ｌ１５１／ｌ）（例２）
シアン化カリウム １０〜７ｓｆ／ｌｃ好ましくはｓ
ｓｒ／ｄ）７／′キＩＬ′ｙＷ７ｙ、ｎ、７ １．〜ｓ
ｏｔ／ＩＩ （ｌ ２０９／ｉｔ ）オン酸
）ｉｉＤＴＡ２Ｋ ［１２〜１５５’／ｌ
＃ １ｒ／１次に実験例を示す。(Example 1) Sodium cyanide 10-509/l (preferably 2
5971) Alkylbenzenesulfonic acid 10-509/IIc
s 189/1) KDTA 2Na O
,2-10? /l (I l151/l) (Example 2) Potassium cyanide 10-7sf/lc preferably s
sr/d)7/'kiIL'yW7y, n, 7 1. ~s
ot/II (l 209/it) ionic acid) iiDTA2K [12-155'/l
#1r/1 Next, an experimental example will be shown.
シアン化ナトリウム２５ ？／ｌ及びアルキルベンゼン
スルフォン酸１８ ｙ／ｌ含む液を従来の剥離剤とし、
これにＥＤＴ Ａ ２ Ｎａ ２ ｆ／ｌ加えたものを
本発明の剥離剤として、銅ストライク−鉄水メッキ製品
に適用したところ従来の剥離剤では銅剥離１５０８θＣ
が０．３μそして銅剥離７５０ｓｅｃが０．７μであっ
たものが本発明に係る剥離剤では銅剥離／３０８θＣが
０．２μそして銅剥離／３０θθＣが０３μであった。Sodium cyanide 25? /l and a liquid containing 18 y/l of alkylbenzenesulfonic acid as a conventional stripping agent,
When this was added with EDT A 2 Na 2 f/l as the stripping agent of the present invention and applied to a copper strike-iron water plated product, the conventional stripping agent could strip copper at 1508θC.
was 0.3μ and copper peeling for 750 sec was 0.7μ, but with the stripping agent according to the present invention, copper peeling/308θC was 0.2μ and copper peeling/30θθC was 03μ.
即ち銅剥離は０７μよりα３μにまで剥離速度が抑制さ
れて剥離量の減少していることが確認できた。That is, it was confirmed that the peeling rate of copper was suppressed from 07μ to α3μ, and the amount of copper peeling was reduced.
更に本発明に係る剥離剤で金の剥離を試してみたところ
、剥離速度は遅いものの従来の剥離剤に比べて均一々剥
離が達成でき、ソフトエツチングに最適であること並び
に素地（例えば。Furthermore, when we tried stripping gold using the stripping agent of the present invention, we found that although the stripping speed was slow, it was able to strip gold more uniformly than conventional stripping agents, making it ideal for soft etching as well as for substrates (e.g.
４２７０イと称する鉄−ニッケル合金）を傷めることが
殆んどないこと等が判明した。It was found that there was almost no damage to the iron-nickel alloy (called 4270I).
伺、キレート剤としてＫＤＴＡの例につき説明全行なっ
たがＥＤＴＡ以外のキレート剤例えば以下のものが使用
可能である。ハＴ、Ｐ、Ａ（ジエチレントリアミ／ペン
タ酢＠ ） 、 Ｔ、Ｔ、）（、Ａ（） ＩＪエチレン
テトラミンヘキサ酢酸）、ＮＴＡ、エチレンジアミンに
トリロトリ酢酸エチレンジアミン）等及びその塩。Although all explanations have been given using KDTA as an example of the chelating agent, chelating agents other than EDTA, such as the following, can also be used. HaT, P, A (diethylenetriamine/pentaacetic acid @ ), T, T, ) (, A () IJ ethylenetetraminehexaacetic acid), NTA, ethylenediamine trilotriacetic acid ethylenediamine), etc., and salts thereof.
以上説明してきたように１本発明に係る剥離剤はキレー
ト剤を含んでいるために金属の剥１離速度を抑制するこ
とができ、しかも銅ストライク−調水メッキの如く剥離
させたくない金属である調水メッキの剥離量を大幅に抑
制することカ可能で、調水メッキの光沢を落とすことな
く銅ストライクメッキ部分の剥離を達成でき、しかも全
体的に剥離に因る沈澱物の量が減少するのでその分液の
管理が容易となり、ろ過や目詰り対策が楽になるという
多くの効果がある。As explained above, the stripping agent according to the present invention contains a chelating agent, so it can suppress the peeling speed of metal, and moreover, it can be used for metals that do not want to be peeled off, such as copper strike-hydrostatic plating. It is possible to significantly suppress the amount of peeling of certain water-control platings, and it is possible to achieve peeling of copper strike plating parts without reducing the luster of water-control plating, and the overall amount of precipitates due to peeling is reduced. This makes it easier to manage the separated liquid, which has many effects such as filtration and clogging prevention.
Claims (2)
含んで成る剥離剤。(1) Potassium cyanide or sodium cyanide. A stripping agent comprising an alkylbenzene sulfonate, and a U*v-t agent.
請求の範囲第１項記載の剥離剤。(2) The release agent according to claim 1, which contains an EDTA compound as a chelating agent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12757182A JPS5920471A (en) | 1982-07-23 | 1982-07-23 | Stripping agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12757182A JPS5920471A (en) | 1982-07-23 | 1982-07-23 | Stripping agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5920471A true JPS5920471A (en) | 1984-02-02 |
| JPH0242904B2 JPH0242904B2 (en) | 1990-09-26 |
Family
ID=14963331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12757182A Granted JPS5920471A (en) | 1982-07-23 | 1982-07-23 | Stripping agent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5920471A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05214565A (en) * | 1991-10-18 | 1993-08-24 | Internatl Business Mach Corp <Ibm> | Process for etching lowly reactive material in the presence of higher reactive material |
| JP2012062572A (en) * | 2010-08-16 | 2012-03-29 | Advanced Technology Materials Inc | Etching solution for copper or copper alloy |
| JP2012072490A (en) * | 2010-08-30 | 2012-04-12 | Dowa Eco-System Co Ltd | Method for recovering gold |
| CN103397351A (en) * | 2013-07-24 | 2013-11-20 | 励福实业（江门）贵金属有限公司 | Automatic degolding production device and method and degolding water used by same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0444503A (en) * | 1990-06-11 | 1992-02-14 | Nippon Doro Kodan | Steel expansion joint |
-
1982
- 1982-07-23 JP JP12757182A patent/JPS5920471A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05214565A (en) * | 1991-10-18 | 1993-08-24 | Internatl Business Mach Corp <Ibm> | Process for etching lowly reactive material in the presence of higher reactive material |
| JP2012062572A (en) * | 2010-08-16 | 2012-03-29 | Advanced Technology Materials Inc | Etching solution for copper or copper alloy |
| US10570522B2 (en) | 2010-08-16 | 2020-02-25 | Entegris, Inc. | Etching solution for copper or copper alloy |
| JP2012072490A (en) * | 2010-08-30 | 2012-04-12 | Dowa Eco-System Co Ltd | Method for recovering gold |
| CN103397351A (en) * | 2013-07-24 | 2013-11-20 | 励福实业（江门）贵金属有限公司 | Automatic degolding production device and method and degolding water used by same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0242904B2 (en) | 1990-09-26 |
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