JPS5887275A - Stripping method for sn layer on cu and cu alloy - Google Patents

Stripping method for sn layer on cu and cu alloy

Info

Publication number
JPS5887275A
JPS5887275A JP18491381A JP18491381A JPS5887275A JP S5887275 A JPS5887275 A JP S5887275A JP 18491381 A JP18491381 A JP 18491381A JP 18491381 A JP18491381 A JP 18491381A JP S5887275 A JPS5887275 A JP S5887275A
Authority
JP
Japan
Prior art keywords
alloy
layers
ions
dil
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18491381A
Other languages
Japanese (ja)
Other versions
JPH0146591B2 (en
Inventor
Shoji Umibe
海部 昌治
Sumio Inoue
井上 純雄
Shigetaka Yamamoto
山本 繁登
Kusuo Sumi
角 九州男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP18491381A priority Critical patent/JPS5887275A/en
Publication of JPS5887275A publication Critical patent/JPS5887275A/en
Publication of JPH0146591B2 publication Critical patent/JPH0146591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/30Acidic compositions for etching other metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/44Compositions for etching metallic material from a metallic material substrate of different composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To easily strip and remove Sn layers in a short time by immersing Cu and a Cu alloy each plated with Sn in dil. sulfuric acid or dil. nitric acid contg. some Cu ions and having a restricted Cl ion content. CONSTITUTION:Cu and Cu alloy scraps plated with Sn, etc. are immersed in 2-40% aqueous soln. of sulfuric acid and/or nitric acid contg. 0.1-10% Cu ions and having a Cl ion content restricted to <=50ppm to dissolve and remove only the Sn layers in a short time and to recover the Cu and Cu alloy base metal while almost preventing the carrosion. Since Cu is nobler than Sn in potential, Sn is dissolved by a reaction represented by Cu<++>+Sn Sn<++>+Cu, and after removing the Sn layers, Cu is hardly carroded by the dil. acid soln. contg. no oxidizing agent.

Description

【発明の詳細な説明】 本発明はCu及びCu合金上のSn層の剥lIi@に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the exfoliation of Sn layers on Cu and Cu alloys.

従来よ?)、Cu及びCu合金を基材とする8nメツキ
材は、端子、或いは、コネクタ一部材として電子機器分
野において広く使用されている。これらの8nメツキ材
は省力化、コストダウンのためプール状でメッキ処理さ
れたのち、コネクター、端子類は打抜き加工されるのが
通常である。しかし、この打抜き加工により発生するス
クラップは8nを0.5〜3wt$g度含有しているの
で、一般Cu屑としての取扱いが困難で用途が限定葛れ
る。そして、このようなスクラップを資源として有効に
利用するには811メツ中層を除去する必要がある。
Conventional? ), 8N plating materials based on Cu and Cu alloys are widely used in the field of electronic equipment as terminals or connectors. These 8N plating materials are usually plated in a pool shape to save labor and reduce costs, and then the connectors and terminals are punched out. However, since the scrap generated by this punching process contains 0.5 to 3 wt$g of 8N, it is difficult to handle it as general Cu scrap, and its uses are limited. In order to effectively utilize such scraps as resources, it is necessary to remove the middle layer of 811 metals.

いtまでにも、Cu及びCu合金上の8nメツキの剥離
法として熱濃’) /ml、或いは、熟濃塩酸中に浸漬
したり、また、水駿化ナトリウム中で電解する方法が提
案されている。しか、しながら、高温の強am液を使用
する方法は、装置保全、衛生上からも大きな問題があり
、かつ、作業性も極めて悪いのである。
Up to now, methods for stripping 8N plating on Cu and Cu alloys have been proposed, such as hot concentrated ')/ml, immersion in concentrated hydrochloric acid, or electrolysis in sodium hydroxide. ing. However, the method of using a high-temperature strong ammonium solution has serious problems in terms of equipment maintenance and hygiene, and is also extremely poor in workability.

その他、従来のどの方法においても、Snメッキ層が溶
解除去された後でもそのtま浸漬を続行すると、Cu及
びCu合金の基材が浸蝕されるのでスクラップとしての
回収効率も悪いのである。
In addition, in any conventional method, if immersion is continued until after the Sn plating layer has been dissolved and removed, the Cu and Cu alloy base materials will be eroded, resulting in poor recovery efficiency as scrap.

tた、一般KCu及びC0合金上のSnメッキの厚みが
異なる材料が混在しているので、これらのスクラップを
上記した剥mtに浸漬すると、処理時間はメッキ層の最
も厚いスクラップで管理されるので必然的にメッキ層の
薄いスクラップは処理時間中にCu及びCu合金の基材
が侵蝕浴解されることになる。従って、剥離液に要求さ
れる性質としてはSnメッキ層のみを浴解し、過程中に
Cu及びCu合金の基材が露出しても、該基材が侵蝕さ
れないものが望ましいのである。
In addition, since materials with different thicknesses of Sn plating on general KCu and CO alloys are mixed, when these scraps are immersed in the above stripping mt, the processing time is controlled by the scrap with the thickest plating layer. Inevitably, scraps with thin plating layers will undergo erosive bath decomposition of the Cu and Cu alloy substrate during processing time. Therefore, the properties required of the stripping solution are such that it only dissolves the Sn plating layer and does not corrode the Cu and Cu alloy base materials even if they are exposed during the process.

本発明は上記に説明した従来技術に鮨みなされたもので
あり、稀酸溶液を使用して短時間でSnメッキ層のみを
溶解除去することが可能であって、C1l及びCu合金
の基材は殆んど侵蝕することがないCU及びCu合金上
の5nN1の剥離法を提供するものである。
The present invention is similar to the prior art described above, and it is possible to dissolve and remove only the Sn plating layer in a short time using a dilute acid solution, and it is possible to dissolve and remove only the Sn plating layer in a short time using a dilute acid solution. provides a method for stripping 5nN1 on CU and Cu alloys that is almost non-erosive.

本発明に保るCu及びCu合金上の5n7i1の剥離法
の特徴とするところは、Cuイオン0.1〜10%を含
有し、Ctイオンを50 ppm以下に抑制した硫酸、
硝酸の単位、若しくは、両者の2〜40g6水11i[
に、Snメッキを施したCU及びCu合金を浸漬するこ
とにある。
The 5n7i1 peeling method on Cu and Cu alloys according to the present invention is characterized by the use of sulfuric acid containing 0.1 to 10% of Cu ions and suppressing Ct ions to 50 ppm or less;
2 to 40 g of nitric acid units or both 6 water 11i [
The method involves immersing Sn-plated CU and Cu alloys.

本発明に係るCu及びCu合金上のSn層の剥離法につ
いて以下詳細に説明する。
A method for peeling off Sn layers on Cu and Cu alloys according to the present invention will be described in detail below.

本発明に係るCu及びCu合金上のSn層の剥離法(以
下、本発明に係る方法ということがある。)において、
剥離、又は、溶解除去されるSnについて考察するに、
Snは両性金属であって中性域では安定であるが、酸ア
ルカリには溶解するといわれている。しかしながら、こ
の溶解速度は稀酸浴液中テは1〜10μ7/24時間と
極めて小いものである。
In the method for peeling off Sn layers on Cu and Cu alloys according to the present invention (hereinafter sometimes referred to as the method according to the present invention),
Considering Sn that is peeled off or removed by dissolution,
Sn is an amphoteric metal and is stable in a neutral range, but is said to be soluble in acids and alkalis. However, this dissolution rate in a dilute acid bath is extremely slow at 1 to 10μ7/24 hours.

しで・シて、本発明に係る方法において、Cu及びCu
合金上のSn層を剥離、又は、溶解するのに短時間、例
えば、1〜5分で行なおうとするためには伺らかの溶解
駆動力が必要であることを本発明者は鋭意検討の結果見
出したものである。
In the method according to the present invention, Cu and Cu
The inventors of the present invention have diligently studied that a certain amount of dissolution driving force is required in order to peel off or dissolve the Sn layer on the alloy in a short time, for example, 1 to 5 minutes. This is what I found as a result.

そして、この溶解駆動力の基本原理は、snとCuの電
気化学的序列の差を利用するものである。
The basic principle of this dissolution driving force is to utilize the difference in electrochemical order between sn and Cu.

即ち、Cu及び8n(Dllllll電電極電位u=C
u    +2e ・・(1〕  go=0.3378
n=Sn  +2m−<2)Eo=−[1,137であ
る。
That is, Cu and 8n (Dllllllll electric electrode potential u=C
u +2e...(1) go=0.3378
n=Sn+2m-<2)Eo=-[1,137.

従って、Cuイオンを含有する酸性溶液中にsnを浸漬
すると、Snが優先的に溶出しCuが表面に析出するこ
とに表夕、この反応を化学式で示すとCu   +5n
−es  +Cu  ”°(31である。
Therefore, when sn is immersed in an acidic solution containing Cu ions, Sn preferentially elutes and Cu precipitates on the surface.
−es +Cu ”° (31.

このことから、Sn表面に析出し九〇〇は、8nに比し
て水素過電圧が/J・さいため有効なカソード点を形成
し、アノード反応であるanの溶解を益々促進すること
がわかる。
From this, it can be seen that 900 deposited on the Sn surface has a smaller hydrogen overvoltage of /J· compared to 8n, so it forms an effective cathode point and further promotes the dissolution of an, which is an anode reaction.

この反応は、Snメッキ層が残存する部分で進行し、P
M6部的にCu及びCu合金の基材が露出した部分はS
nよりも電位的に責であるためその溶解は完全に抑制さ
れるのである。
This reaction progresses in the area where the Sn plating layer remains, and the P
M6 The part where the base material of Cu and Cu alloy is partially exposed is S.
Since it has a higher potential than n, its dissolution is completely suppressed.

このように、Cu及びCu合金上からSnメッキ層がt
i!面より溶解除去されると、Cu及びCu合金の基材
i/j稀酸溶液により侵蝕されることになるが、酸化剤
を貧有しない4III!酸#i液中でのCu及びCu合
金の侵蝕率は微小であるため、仮りに要時間そのまま浸
漬されたとしても間鉋とはならない。
In this way, the Sn plating layer is t
i! When dissolved and removed from the surface, the base material of Cu and Cu alloy i/j will be eroded by the dilute acid solution, but 4III! Since the corrosion rate of Cu and Cu alloys in acid #i solution is minute, even if they are immersed for the required time, it will not result in a planer.

また、本発明者は上記(3)式の反応を円滑に進行させ
るのには、酸性水浴液中のCtイオンを50ppm以下
に抑制する必要のあることを見出した。そして、使用す
る酸は、H冨804 、HNOsの伺れか181[か、
また混合したものでもよい。
Further, the present inventors have found that in order for the reaction of the above formula (3) to proceed smoothly, it is necessary to suppress Ct ions in the acidic water bath solution to 50 ppm or less. The acids used are Htomi 804, HNOs Hireka 181 [ka,
Alternatively, a mixture may be used.

本発甲に係る方法において、使用するII!!1度を2
〜10チとするのけ、2チ未満では溶解速度が非常に小
さく、また、40%を越えても溶解速度はあまり大きく
ならないばかりか、がえって、有害ガスの発生が著しく
なり、かつ、作業性が悪くガって好ましくないからであ
る。
In the method related to this patent, II! ! 1 degree to 2
~10%, but if it is less than 2%, the dissolution rate is very low, and even if it exceeds 40%, the dissolution rate does not increase much, and on the contrary, the generation of harmful gas becomes significant, and This is because the workability is poor and the process is undesirable.

また、酸溶液中のCuイオンの作用及び/又は効果は上
装置、た通りであるが、Cuイオンが0.1%未満では
その効果が少なく、また、10tsを越えて存在しても
効果は殆んど飽和してしまうのである。
In addition, the action and/or effect of Cu ions in the acid solution is as described in the above device, but the effect is small if the Cu ion is less than 0.1%, and there is no effect even if it is present for more than 10 ts. It is almost saturated.

よって、Cuイオンはu1〜10%とするのがよい。Therefore, it is preferable that the Cu ion content be 1 to 10%.

さらに、Ctイオンはsnの溶解速度に著]〜〈1譬を
及ぼすものであり、50 ppmを越えると均一溶解が
抑制されると同時に溶解速度が著しく減少するので工業
的なSnメッキ層剥離を行なうには、必ず50 ppm
以下に抑制しなければ々らないのである。
Furthermore, Ct ions have a significant effect on the dissolution rate of Sn, and if it exceeds 50 ppm, uniform dissolution is suppressed and at the same time the dissolution rate is significantly reduced, making it difficult to peel off the Sn plating layer industrially. To do this, be sure to use 50 ppm.
It is necessary to suppress it to the following.

本発明に係るCu及びCu合金上のSn層の剥離法の実
施例を比較例と一緒に説明する。
Examples of the method for peeling off Sn layers on Cu and Cu alloys according to the present invention will be described together with comparative examples.

実施例 本発明に係る方法において使用する溶液と比較のための
各af6液とのCu及びCu合金上のanメッキ層の剥
離状況と、Cu及びCu合金基材の侵蝕状態についての
例である。
EXAMPLE This is an example of the peeling state of the AN plating layer on Cu and Cu alloy and the corrosion state of the Cu and Cu alloy base material between the solution used in the method according to the present invention and each AF6 solution for comparison.

(1)被処理金属材料 Cu合金(01167〜70%、zn残)を基材として
、Snを1〜2μメツキし丸材群。
(1) Metal material to be treated: A round material group made of a Cu alloy (01167-70%, residual Zn) as a base material and plated with 1-2 μm of Sn.

(21Snメッキ剥離試験 snメッキの剥離状態とCu合金基材の侵蝕状園の試験
方法は次の通りである。
(21Sn plating peeling test The test method for the peeling state of the Sn plating and the corrosion state of the Cu alloy base material is as follows.

■ Snの剥離状態 各溶液に侵潰後の試験材に残存するSn量を分析して、
61&階の評価をした。
■ Peeling status of Sn Analyze the amount of Sn remaining in the test material after being eroded by each solution.
I rated the 61st floor.

○・・・・・・・・・Sn剥$  90%以上△・・・
・・・・・ #  50−以上×・・・・・・・・・ 
、   50−以下なお、○印以上が本発明に係る方法
の対象とするところである。
○・・・・・・Sn peeling $ 90% or more △・・・
・・・・・・ #50− or more×・・・・・・・・・
, 50- or less Note that those marked with ◯ and above are targets of the method according to the present invention.

i「+l  Cu合金基材の侵蝕状態 Cu合金基材の侵蝕を肉眼によりI!察し、4段階の評
価をした。
Erosion state of the Cu alloy base material The corrosion of the Cu alloy base material was observed with the naked eye and evaluated on a four-level scale.

○・・・・・・・・・Cu合金基材の侵蝕なし@・・・
・・・・・     が若干侵蝕されるΔ・・・・・・
・・・     が侵蝕される×・・・・・・・・  
   が著しく侵蝕される。
○・・・・・・No corrosion of Cu alloy base material @...
・・・・・・ is slightly eroded Δ・・・・・・
・・・ is eroded×・・・・・・・・・
is severely eroded.

これらの結果を第1表に示す。These results are shown in Table 1.

以上鮮細にiqしたように、本発」、に係るCu及びC
u合金上のbn層の剥離法は、上記の榊威を有している
ものであるから、Cu及びCu合金上の8nメッキ層は
極めて短時間に殆んどが剥離、又は、溶解除去され、か
つ、Cu及びCu合金基体の侵蝕も極めて微小であると
いう優れた効果を奏するものである。
As detailed above, Cu and C related to the present invention
Since the peeling method for the BN layer on the U alloy has the above-mentioned advantages, most of the 8N plating layer on the Cu and Cu alloys can be peeled off or dissolved and removed in a very short time. Moreover, the corrosion of the Cu and Cu alloy substrates is extremely small, which is an excellent effect.

Claims (1)

【特許請求の範囲】[Claims] Cuイオン0.1〜10%を含有し、Ctイオンを50
ppm以下に抑制した硫酸、硝酸の単独、若しくは、両
者の2〜4096水溶液に、8nメツキを施したCu及
びCU金合金浸漬することを特徴とするCu及びCu合
金上の8n層の剥離法。
Contains 0.1-10% of Cu ions and 50% of Ct ions.
A method for peeling off an 8N layer on Cu and Cu alloys, which comprises immersing 8N plated Cu and CU gold alloys in a 2 to 4096 aqueous solution of sulfuric acid, nitric acid, or both, suppressed to ppm or less.
JP18491381A 1981-11-18 1981-11-18 Stripping method for sn layer on cu and cu alloy Granted JPS5887275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18491381A JPS5887275A (en) 1981-11-18 1981-11-18 Stripping method for sn layer on cu and cu alloy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18491381A JPS5887275A (en) 1981-11-18 1981-11-18 Stripping method for sn layer on cu and cu alloy

Publications (2)

Publication Number Publication Date
JPS5887275A true JPS5887275A (en) 1983-05-25
JPH0146591B2 JPH0146591B2 (en) 1989-10-09

Family

ID=16161518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18491381A Granted JPS5887275A (en) 1981-11-18 1981-11-18 Stripping method for sn layer on cu and cu alloy

Country Status (1)

Country Link
JP (1) JPS5887275A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360241A (en) * 1986-08-29 1988-03-16 Nippon Mining Co Ltd Treatment for copper scrap
JP2011177696A (en) * 2010-03-04 2011-09-15 Dowa Metaltech Kk REGENERATION TREATMENT METHOD FOR WASTE LIQUID CONTAINING Sn ION
US8262769B2 (en) 2009-12-15 2012-09-11 Dowa Metaltech Co., Ltd Method of detinning Sn plating layer on Cu-based material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360241A (en) * 1986-08-29 1988-03-16 Nippon Mining Co Ltd Treatment for copper scrap
US8262769B2 (en) 2009-12-15 2012-09-11 Dowa Metaltech Co., Ltd Method of detinning Sn plating layer on Cu-based material
JP2011177696A (en) * 2010-03-04 2011-09-15 Dowa Metaltech Kk REGENERATION TREATMENT METHOD FOR WASTE LIQUID CONTAINING Sn ION

Also Published As

Publication number Publication date
JPH0146591B2 (en) 1989-10-09

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