JPS59202633A - Pattern inspecting device - Google Patents

Pattern inspecting device

Info

Publication number
JPS59202633A
JPS59202633A JP58076953A JP7695383A JPS59202633A JP S59202633 A JPS59202633 A JP S59202633A JP 58076953 A JP58076953 A JP 58076953A JP 7695383 A JP7695383 A JP 7695383A JP S59202633 A JPS59202633 A JP S59202633A
Authority
JP
Japan
Prior art keywords
reticle
mask
pattern
light
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58076953A
Other languages
Japanese (ja)
Inventor
Yoshiki Suzuki
鈴木　淑希
Hidefumi Nakada
中田　秀文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58076953A priority Critical patent/JPS59202633A/en
Publication of JPS59202633A publication Critical patent/JPS59202633A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enable to perform the pattern defect inspection of a mask (reticle) with high precision and simply by a method wherein a pattern inspecting device consists of two inspecting stations provided with an X-Y table, a light-emitting part and a light-receiving part, and converters a comparator to compare electric signals and a stage control part. CONSTITUTION:A placing table 5 placing a mask (reticle) 4, which is a sample to be inspected, thereon, has been mounted on the X-Y table 3 of the first inspecting station I . Moreover, a flying spot scanner 6, which is a light-emitting part, has been arranged over the placing table 5, while a photomultiplier 7, which is a light-receiving part, has been arranged in the lower direction thereof. A reference mask (reticle) 9 having a pattern for comparison is placed on the placing table 5 of the second inspecting station II having the same mechanism as that of the first inspecting station 1 and the optical image of the reference mask (reticle) 9 is converted into an electric signal by a converter 8. Electric signals obtained from the mask (reticle) 4, which is a sample to be inspected, and the reference mask (reticle) 9 are compared by a comparator 10 and a difference signal, that is, a signal of pattern defect is extracted.

Description

【発明の詳細な説明】 この分明は、同−設計パターンを有する２枚のマスク（
レティクル）のパターン名比較することによって、パタ
ーン欠陥を検出する／（ターン検査装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION This finding is based on the following: Two masks having the same design pattern (
This relates to a turn inspection device that detects pattern defects by comparing pattern names of reticles.

半導体装置の製造において用いられるフォトマスクは、
半導体素子の性能およびその製造歩留りに大きな影響を
与えるため、そのパターン検査は極めて重要である。Photomasks used in the manufacture of semiconductor devices are
Pattern inspection is extremely important because it has a significant impact on the performance of semiconductor devices and their manufacturing yield.

従来、これらのフォトマスクの自動検査の方式として、
１枚のフォトマスク上に隣設する同一）（ターン上をフ
ライングスポットが走査し、それによって得た信号を比
較する隣設チップ比較方式や、設計データを変換して得
た検査用ＣＡＤデータと、イメージセンサでとらえた実
パターンとを比較するデータ参照方式等が採用されてい
る。しかし、縮小投影型露光装置に用いられるレティク
ルは、設計パターンに対して１０倍、あるいは５倍に拡
大されたパターンを有するために、／ティクル上に同一
パターンが複数個配置できない場合があり、従来の隣設
チップ比較方式の検査鉄部が適用できない。また、デー
タ参照方式の場合には、検査データ作成のための時間を
要し、さらに高価なデータ作成装置を必要とする。Conventionally, as a method for automatically inspecting these photomasks,
Adjacent chip comparison method, in which a flying spot scans the turn and compares the signals obtained, and inspection CAD data obtained by converting design data. , a data reference method that compares the actual pattern captured by an image sensor is used. However, the reticle used in a reduction projection exposure device is magnified 10 times or 5 times the design pattern. Because of the pattern, it may not be possible to place multiple identical patterns on a tickle, making it impossible to apply the inspection iron part of the conventional adjacent chip comparison method.In addition, in the case of the data reference method, it is difficult to create inspection data. This requires time and expensive data generation equipment.

これらの問題を解決するために、隣設チップ比較方式の
応用として同一パターンを有する２枚のマスク（レティ
クル）を同一ステージに載せ、１枚を基準試料、もう１
枚を被検査試料として比較検査する方式が提案されてい
る。しがし、この方式モは、１枚のマスク（レティクル
）サイズが最大５〜６インチ０　であるため、ステージ
サイズを最低１０〜】２インチ０　と極めて大形化する
必要がある。このために、ステージの精度（直線度。In order to solve these problems, as an application of the adjacent chip comparison method, two masks (reticles) with the same pattern are placed on the same stage, one is a reference sample, and the other is a reference sample.
A method has been proposed in which a comparative inspection is performed using a sheet as a sample to be inspected. However, in this method, since the maximum size of one mask (reticle) is 5 to 6 inches, the stage size must be extremely large to at least 10 to 2 inches. For this purpose, the accuracy (straightness) of the stage.

直交度等）を向上させることが極めて難しくなる。It becomes extremely difficult to improve the degree of orthogonality, etc.

さらに、ステージの上部に配置された発光部から出た光
を５〜６インチ離れたそれぞれの被検査試料上に分離し
て照射させるために、複雑な光学系が必要となり、当然
光学系の歪みも大きくなる。Furthermore, in order to separate and irradiate the light emitted from the light emitting unit placed at the top of the stage onto each test sample 5 to 6 inches apart, a complex optical system is required, which naturally causes distortion of the optical system. also becomes larger.

これらの原因のために、２枚のマスク（レティクル）を
同一ステージに載せ、これらを比較する方式はパターン
欠陥を検出する能力に劣り、実用上極めて問題となって
いる。For these reasons, the method of placing two masks (reticles) on the same stage and comparing them is inferior in ability to detect pattern defects, and is extremely problematic in practice.

この発明は、上述の点にかんがみなされたもので、フォ
トマスクの検査、％ＫＮ用パターンの１０倍、５倍等の
拡大されたパターンを有するマスク（レティクル）のバ
タ丁ン欠陥検査を高精度に、しかも簡便に行うことがで
きるパターン検査装置を提供することを目的とするもの
である。This invention has been made in consideration of the above points, and is capable of high-precision photomask inspection and butterfly defect inspection of masks (reticles) having patterns that are 10 times or 5 times larger than the %KN pattern. It is an object of the present invention to provide a pattern inspection device that can perform pattern inspection easily.

このような目的を達成するため、この発明のパターン検
査装置は、被検査試料または基準マスクを載置した載置
テーブルを塔載するＸ−Ｙテーブル、発光部および受光
部を備えた２台の検査ステーションと、受光部が得た被
検査試料または基準マスクの光学像をそれぞれ電気信号
に変換する変換器と、これら両変換器によって変換され
た電気信号を比較する比較器と、載置テーブルが塔載さ
れたＸ−Ｙテーブルを制御するステージ制御部とから構
成したものである。以下図面に基づいてこの発明の一実
施例を具体的に説明する。In order to achieve such an object, the pattern inspection apparatus of the present invention includes two X-Y tables each having a mounting table on which a sample to be inspected or a reference mask is mounted, a light-emitting section, and a light-receiving section. An inspection station, a converter that converts the optical image of the inspected sample or reference mask obtained by the light receiving unit into an electrical signal, a comparator that compares the electrical signals converted by these two converters, and a mounting table. The stage control section controls the XY table mounted on the stage. An embodiment of the present invention will be specifically described below based on the drawings.

この図で、１はパターン検査装置で、パルスモータ２に
より相互に直交する方向に移動可能なＸ−Ｙテーブル３
を有し、このＸ−Ｙテーブル３上には被検査試料である
マスク（レティクル）４が載置された載置テーブル５が
塔載されている。さらに、載置テーブル５の上方には発
光部であるフライングスポットスキャナ６を配置し、下
方に受光部であるフォトマルＴを配置しである。以上で
第１の検査ステーション１が構成される。In this figure, 1 is a pattern inspection device, and an X-Y table 3 is movable in mutually orthogonal directions by a pulse motor 2.
A mounting table 5 on which a mask (reticle) 4, which is a sample to be inspected, is mounted is mounted on the XY table 3. Furthermore, a flying spot scanner 6 which is a light emitting part is arranged above the mounting table 5, and a photomultiple T which is a light receiving part is arranged below. The first inspection station 1 is thus configured.

したがって、被検査試料であるマスク（レティクル）４
の光学像は、マスク（レティクル）４の透過光によるパ
ターンである。光学像は、変換器８によって電気信号に
変換される。Therefore, the mask (reticle) 4 which is the sample to be inspected
The optical image is a pattern formed by transmitted light of the mask (reticle) 4. The optical image is converted into an electrical signal by a converter 8.

一方、比較用ハターンを有する基準マスク（レティクル
）９は、第１の検査ステーションＩと同様な機構を有す
る第２の検査ステーション■の載置テーブル５上に載置
され、もう一方の変換器８によって基準マスク（レティ
クル）９の光学像は、電気信号に変換される。被検査試
料であるマスク（レティクル）４および基準マスク（レ
ティクル）９から得られた電気信号は、比較器１ｏによ
って比較され、差異信号、すなわちパターン欠陥の信号
が抽出される。この時、両Ｘ−Ｙテーブル３は、ステー
ジ制御器１１によって制御され全く同様な動きを同時に
行っている。On the other hand, a reference mask (reticle) 9 having a pattern for comparison is placed on the mounting table 5 of a second inspection station (2) which has the same mechanism as the first inspection station I, and the other transducer 8 The optical image of the reference mask (reticle) 9 is converted into an electrical signal. Electric signals obtained from a mask (reticle) 4, which is a sample to be inspected, and a reference mask (reticle) 9 are compared by a comparator 1o, and a difference signal, that is, a pattern defect signal, is extracted. At this time, both XY tables 3 are controlled by the stage controller 11 and are simultaneously performing exactly the same movements.

以上の実施例は、透過光の信号比較によるものについて
説明したが、反射信号の比較によっても可能であること
はもちろんである。Although the above embodiments have been described based on signal comparison of transmitted light, it is of course possible to compare reflected signals.

以上説明したように、この発明によれは、従来の２枚の
マスク（レティクル）比較検査装置に比較して検査ステ
ーションが小形化され、これによりステージ精度が向上
され、さらに、光学像の歪みが改善され、欠陥検出精度
の著しい向上が期待できる。さらにこの発明によれは５
２つの検査ステーションを同一場所に設置する必要がな
いので、被検査試料と基準マスクが同時に同一場所に存
在する必要がなく、検査機能の向上が期待できる利点か
ある。As explained above, the present invention has a smaller inspection station compared to the conventional two-mask (reticle) comparative inspection device, which improves the stage accuracy and further reduces the distortion of the optical image. We can expect a significant improvement in defect detection accuracy. Furthermore, according to this invention, 5
Since it is not necessary to install two inspection stations at the same location, there is no need for the sample to be inspected and the reference mask to be present at the same location at the same time, which has the advantage of being expected to improve the inspection function.

【図面の簡単な説明】[Brief explanation of the drawing]

図面はこの発明の一実施例を示すパターン検査装置の構
成図である。 図中、１はパターン検査装置、２はパルスモ−タ、３は
Ｘ−Ｙテーブル、４は被検査試料であるマスク（Ｖティ
クル）、５は載置テーブル、６はフライングスポットス
キャナ、Ｔはフォトマル、８は変換器、９は基準マスク
（Ｖティクル）、１０は比較器、１１はステージ制御器
である。The drawing is a configuration diagram of a pattern inspection apparatus showing an embodiment of the present invention. In the figure, 1 is a pattern inspection device, 2 is a pulse motor, 3 is an X-Y table, 4 is a mask (V tickle) that is a sample to be inspected, 5 is a mounting table, 6 is a flying spot scanner, and T is a photo 8 is a converter, 9 is a reference mask (V tickle), 10 is a comparator, and 11 is a stage controller.

Claims (1)

【特許請求の範囲】[Claims] 被検査試料または基準マスクのどちらか一方がそれぞれ
載置される載置テーブルを塔載した２台のＸ−Ｙテーブ
ルと、発光部と受光部とを有し、前記発光部から照射さ
れた光が前記被検査試料または基準マスクな透過または
反射して受光部に入射する光路を形成し得るように前記
２台のＸ−Ｙテーブルにそれぞれ配置してなる第１およ
び第２の２台の検査ステーションと、これら第１および
第２の検査ステーションのそれぞれの受光部で得た光学
像をそれぞれ電気信号に変換する変換器と、前記両変換
器によって変換された電気信号を比較する比較器と、前
記第１および第２の検査ステーションのＸ−Ｙテーブル
を同一に制御するステージ制御器とから構成されたこと
を特徴とするパターン検量装置。It has two X-Y tables each carrying a mounting table on which either a sample to be inspected or a reference mask is placed, a light emitting part and a light receiving part, and the light emitted from the light emitting part. two inspection units, the first and second inspection units, arranged on the two X-Y tables, respectively, so as to form an optical path that is transmitted through or reflected from the inspected sample or the reference mask and enters the light receiving section; a converter that converts the optical images obtained by the light receiving sections of the first and second inspection stations into electrical signals, and a comparator that compares the electrical signals converted by both the converters; and a stage controller that controls the X-Y tables of the first and second inspection stations in the same manner.
JP58076953A 1983-04-30 1983-04-30 Pattern inspecting device Pending JPS59202633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58076953A JPS59202633A (en) 1983-04-30 1983-04-30 Pattern inspecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58076953A JPS59202633A (en) 1983-04-30 1983-04-30 Pattern inspecting device

Publications (1)

Publication Number Publication Date
JPS59202633A true JPS59202633A (en) 1984-11-16

Family

ID=13620138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58076953A Pending JPS59202633A (en) 1983-04-30 1983-04-30 Pattern inspecting device

Country Status (1)

Country Link
JP (1) JPS59202633A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114154A (en) * 1988-10-24 1990-04-26 Hitachi Ltd Reticle inspection and apparatus therefor
JP2018025565A (en) * 2009-01-26 2018-02-15 ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ Systems and methods for detecting defects on wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114154A (en) * 1988-10-24 1990-04-26 Hitachi Ltd Reticle inspection and apparatus therefor
JP2018025565A (en) * 2009-01-26 2018-02-15 ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ Systems and methods for detecting defects on wafer
US10605744B2 (en) 2009-01-26 2020-03-31 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer

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