JPS59201410A - Infrared heat-treatment device - Google Patents
Infrared heat-treatment deviceInfo
- Publication number
- JPS59201410A JPS59201410A JP7657083A JP7657083A JPS59201410A JP S59201410 A JPS59201410 A JP S59201410A JP 7657083 A JP7657083 A JP 7657083A JP 7657083 A JP7657083 A JP 7657083A JP S59201410 A JPS59201410 A JP S59201410A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- transmission
- scattering
- area
- treatment device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 22
- 230000005540 biological transmission Effects 0.000 claims abstract description 31
- 238000000149 argon plasma sintering Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
Abstract
Description
【発明の詳細な説明】
（ａｌ 発明の技術分野
本発明は半導体基板等の試料を熱処理する赤外線熱処理
装置に係り、特に均一な温度分布を得るに有効な近赤外
光照射系の改良に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an infrared heat treatment apparatus for heat treating a sample such as a semiconductor substrate, and more particularly to an improvement in a near-infrared light irradiation system effective for obtaining a uniform temperature distribution.
ｔｂｌ 技術の背景
半導体基板に施される各種の熱処理は半導体プロセスの
中でも信頼性を左右する重要な要素であり、例えばシリ
コン基板に熱酸化膜を形成する熱酸化法や、ＭＯ８ｆｉ
牛導体におけるイオン打込によって生ずる格子欠陥の削
減や不純物の活性化のためのア：−−ル処理、又は基板
上に形成した金属膜のステップカバレッヂの改善、更に
はｍＫ膜の結晶粒子を粗大化する等の熱処理が施される
。一般的な熱処理装置に電気炉があり清浄な雰囲気とし
た炉内に基板を配置し、一定温度に刀日熱して炉内温度
分、Ｉｆｆを均一化する。こ２″Ｌに対してハロゲンガ
スを封入した赤外線ランプを熱源とする熱処理装置は処
理の高速性即ち急熱、急冷のＭ別注から注目されつ＼あ
る。tbl Technology background Various heat treatments applied to semiconductor substrates are important elements that affect reliability in semiconductor processes. For example, thermal oxidation method that forms a thermal oxide film on a silicon substrate,
Aluminum treatment to reduce lattice defects and activate impurities caused by ion implantation in conductors, improve step coverage of metal films formed on substrates, and improve crystal grains of mK films. Heat treatment such as coarsening is performed. A typical heat treatment apparatus includes an electric furnace, and the substrate is placed in the furnace with a clean atmosphere and heated to a constant temperature to equalize If by the temperature inside the furnace. Heat treatment equipment that uses an infrared lamp filled with halogen gas as a heat source for this 2"L is attracting attention because of its high processing speed, that is, rapid heating and rapid cooling.
ｔｅｌ 従来技術と問題点
第１図は従来の赤外線熱処理装置を示す構成図、第２図
は第１図の炉内の受光強度分布を示す分布曲線図である
。図において、赤外光を透過する石英で形成さｉまたチ
ャンバｌの上面、下面にタンクステンフィラメントを煤
層状に組込みハロゲンガスを封入した赤外線ランプ２を
複数個対向する位置に配設して構成される。チャンバ１
には反応ガスを導入するガス導入口３及び反応ガスを排
気する排気口４を備え、エンドキャップ５により密閉さ
れる。赤外線ランプ２には反射板６を備えて、近赤外光
の照射効率を高めチャンバ１内に配置した半導体基板７
の熱処理を行なう。このように赤外線ランプからの近赤
外光を熱源とする急熱急冷の、熱処理装置であって、チ
ャンバ１内の受光強度分布は上下（こ配置した赤外線ラ
ンプ２の対向するＡ点が高く、中間部即ち谷Ｂ点で低く
なりバラ＼ツキが大きい。その分布曲線を第２図に示す
。Ｘ軸に温度Ｙ軸にチャンバ１の中心における変位量を
とり、曲線で表はすと分布曲線８が得られＡ点が高くＢ
点が低い分布となり均一な受光強度分布が得られない。tel Prior Art and Problems FIG. 1 is a block diagram showing a conventional infrared heat treatment apparatus, and FIG. 2 is a distribution curve diagram showing the received light intensity distribution in the furnace of FIG. In the figure, a chamber l is made of quartz that transmits infrared light, and tank stencil filaments are incorporated in the upper and lower surfaces of the chamber l in the form of a soot layer, and a plurality of infrared lamps 2 filled with halogen gas are arranged at opposing positions. be done. chamber 1
is provided with a gas inlet 3 for introducing a reaction gas and an exhaust port 4 for exhausting the reaction gas, and is sealed with an end cap 5. The infrared lamp 2 is equipped with a reflector 6 to increase the irradiation efficiency of near-infrared light, and the semiconductor substrate 7 disposed in the chamber 1
Heat treatment is performed. As described above, it is a heat treatment device that performs rapid heating and cooling using near-infrared light from an infrared lamp as a heat source, and the received light intensity distribution inside the chamber 1 is vertical (the point A facing the infrared lamps 2 arranged in this way is high; It becomes low at the middle part, that is, the valley B point, and there is a large variation.The distribution curve is shown in Figure 2.The temperature is on the X axis, and the displacement at the center of the chamber 1 is on the Y axis, and when expressed as a curve, the distribution curve is 8 was obtained and the A point was high and B
The distribution of points becomes low, and a uniform received light intensity distribution cannot be obtained.
このため赤外線ランプ２の直下に透過散乱板１０を配し
赤外光を散乱させて均一な受光強度分布が得られるよう
にしている。透過散乱板１０は石英ガラスの両面に砂目
を入猶、たスリガラスであり、これによって分布曲線９
が得られる０し７１）シこの場合上分布曲線９より明か
なように強度差があり、高速高温で試料温度を上昇させ
た場合結晶欠陥（スリップラインノが発生し又試料を（
ｄｉ 発明の目的
不発明は上記の点番こ鑑み赤外線ランプ力）らの近赤外
光を透過する透過域と散乱させる透過散乱域とを同一散
乱板上に設けてなる透過散乱機構を提供し、均一な温度
分布を得ることを目的とする。For this reason, a transmission scattering plate 10 is disposed directly below the infrared lamp 2 to scatter the infrared light to obtain a uniform received light intensity distribution. The transmission scattering plate 10 is made of quartz glass with sand grains on both sides, so that the distribution curve 9
In this case, as shown in the upper distribution curve 9, there is a difference in strength, and when the sample temperature is increased at high speed and high temperature, crystal defects (slip lines) occur and the sample (
In view of the above points, an object of the invention is to provide a transmission scattering mechanism in which a transmission region for transmitting near-infrared light (infrared lamp power) and a transmission scattering region for scattering it are provided on the same scattering plate. , the purpose is to obtain a uniform temperature distribution.
（ｅ）発明の構成
上記目的は本発明によれば赤外線ランプからの赤外光を
透過散乱板を介してチャンバ内を照射させ、該チャンバ
内に配置した試料を熱処理する赤外線熱処理装置に２い
て、該透過散乱板ｌこ該赤外元透過城と該赤外光散乱域
とを具備せしめ、該赤外ブＣ散乱域を前記赤外線ランプ
の直下に配して構成することによって達せられる。(e) Structure of the Invention According to the present invention, the above object is to provide an infrared heat treatment apparatus for irradiating the inside of a chamber with infrared light from an infrared lamp through a transmission scattering plate and heat treating a sample placed in the chamber. This is achieved by configuring the transmitting and scattering plate to include the infrared source transmitting area and the infrared light scattering area, and arranging the infrared light scattering area directly below the infrared lamp.
（ｆｌ 発明の実施例
以下本発明の実施例を図−一こより詳述する。第３図は
本発明の一実施例である透過散乱板を示す斜視図、第４
図は赤外線ランプの直下に配した透過散乱板を示す要部
断面図、第５図は本発明の透過散乱域によって得られる
受光強度分布を示す曲線図である。図において透過散乱
板１１の両面に斜線で示す透過散乱域１２と透過域１３
を形成する。透過散乱域１２を第４図で示す赤外線ラン
プ１４の直下に来るように取付けて赤外光を散乱させ急
激な温度上昇を緩和する。他の透過域１３では赤外光は
直進する０散乱板の形成は予じめ透過散乱域１２を求め
砂目を設けるか或いは博膜のカーボンＮ（ｂ ｉ Ｃ）
をコートしてもよい。このような構成とすることにより
従来の全面砂目を設けた透過散乱域に比し、全体的に受
光強度が高くなり、バラツキが減少する。第５図の受光
強度分布曲線１５によって明らかなように平均受元頚度
１６は従来に比して高温となりしかもバラツキは減少す
る。従って温度分布は略均−化しスリップライン或いは
そり等のない信頼性ある熱処理を施すことができる。し
かも受光強度が増す力）ら従来に比して消費電力の削減
が可能となり高温高、４性にＭ利となる。(fl Embodiments of the Invention The embodiments of the present invention will be described in detail below with reference to Figure 1. Fig. 3 is a perspective view showing a transmission scattering plate which is an embodiment of the invention, and Fig. 4
The figure is a cross-sectional view of a main part showing a transmission scattering plate placed directly below an infrared lamp, and FIG. 5 is a curve diagram showing the received light intensity distribution obtained by the transmission scattering region of the present invention. In the figure, a transmission and scattering region 12 and a transmission region 13 are indicated by diagonal lines on both sides of the transmission and scattering plate 11.
form. The transmission scattering region 12 is installed directly below the infrared lamp 14 shown in FIG. 4 to scatter the infrared light and alleviate a sudden temperature rise. In the other transmission region 13, infrared light travels straight.To form a scattering plate, find the transmission and scattering region 12 in advance and provide grain, or use Hakuba's Carbon N (b i C).
May be coated with With such a configuration, compared to a conventional transmission scattering region in which grains are provided on the entire surface, the received light intensity is increased as a whole, and variations are reduced. As is clear from the received light intensity distribution curve 15 in FIG. 5, the average receiver neck value 16 is higher than in the past, and the variation is reduced. Therefore, the temperature distribution is approximately equalized, and reliable heat treatment without slip lines or warpage can be performed. In addition, the ability to increase the intensity of received light makes it possible to reduce power consumption compared to conventional methods, resulting in M benefits in terms of high temperature and high performance.
（−発明の効果
以上詳細に発明したように本発明の透過散乱板を用いた
赤外線熱処理装置とすることにより炉内温度分布の均一
化が得られるから信頼度の高い熱処理が可能となり、消
費電力も節約される等大きな効果がある。(-Effects of the Invention As detailed above, by using an infrared heat treatment apparatus using the transmission scattering plate of the present invention, the temperature distribution inside the furnace can be made uniform, making it possible to perform highly reliable heat treatment, and power consumption. It also has great effects, such as saving money.
第１図は従来の赤外線熱処理装置を示す構成図、第２図
は第１図の炉内の受光強度分布を示す分布曲線図、第３
図は本発明の一実施例である透過散乱板を示すｆｒ＋視
図、第４図は赤外線ランプの直下に配した透過散乱板を
示す要部断面図、第５図は本発明の透過散乱板によって
得られる受光強度分布を示す曲線図である。
図中１・・・・・・チャンバ、２．１４・・・・・・赤
外線ランプ、３・・・・・・反応ガス導入口、４・・・
・・・排気口、５・・−・・エンドキャップ、６・・・
・・・反射板、７・・・・・・半導基板、８゜９．１５
・・・・・・受光強度曲線、１０．１１・・・・・・透
過散乱板、１２・・・・・・透過散乱域、１３・・−・
・透過域、１６・・・・・・平均受光強度。
あ２ 図
Ｙ
第ダ閉
□１Figure 1 is a configuration diagram showing a conventional infrared heat treatment apparatus, Figure 2 is a distribution curve diagram showing the received light intensity distribution in the furnace of Figure 1,
The figure is a fr+ view showing a transmission scattering plate according to an embodiment of the present invention, FIG. 4 is a cross-sectional view of a main part showing a transmission scattering plate placed directly under an infrared lamp, and FIG. 5 is a transmission scattering plate of the present invention. It is a curve diagram showing the received light intensity distribution obtained by. In the figure, 1...chamber, 2.14...infrared lamp, 3...reactive gas inlet, 4...
...Exhaust port, 5...End cap, 6...
...Reflector, 7...Semiconductor substrate, 8°9.15
...Received light intensity curve, 10.11... Transmission scattering plate, 12... Transmission scattering region, 13...
- Transmission range, 16... Average received light intensity. A2 Figure Y Close □1
Claims (1)
バ内を照射させ、該チャンバ内に配置した試料を熱処理
する赤外線熱処理装置に？いて、該透過散乱板に該赤外
光透過域と該赤外光散乱域とを具備せしめ、該赤外光散
乱域を前記赤外線ランプの直下！ピ配して構成されてい
ることを特徴とする赤外線熱処理装置。An infrared heat treatment device that irradiates the inside of a chamber with infrared light from an infrared lamp through a transmission scattering plate and heat-treats a sample placed inside the chamber? The transmitting and scattering plate is provided with the infrared light transmitting region and the infrared light scattering region, and the infrared light scattering region is located directly below the infrared lamp! An infrared heat treatment device characterized in that it is configured in a piston arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7657083A JPS59201410A (en) | 1983-04-30 | 1983-04-30 | Infrared heat-treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7657083A JPS59201410A (en) | 1983-04-30 | 1983-04-30 | Infrared heat-treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59201410A true JPS59201410A (en) | 1984-11-15 |
Family
ID=13608887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7657083A Pending JPS59201410A (en) | 1983-04-30 | 1983-04-30 | Infrared heat-treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59201410A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093911A (en) * | 1997-05-27 | 2000-07-25 | Hitachi, Ltd. | Vacuum heating furnace with tapered portion |
-
1983
- 1983-04-30 JP JP7657083A patent/JPS59201410A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093911A (en) * | 1997-05-27 | 2000-07-25 | Hitachi, Ltd. | Vacuum heating furnace with tapered portion |
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