JPS59201357A - Secondary ion mass spectrometer - Google Patents
Secondary ion mass spectrometerInfo
- Publication number
- JPS59201357A JPS59201357A JP58076678A JP7667883A JPS59201357A JP S59201357 A JPS59201357 A JP S59201357A JP 58076678 A JP58076678 A JP 58076678A JP 7667883 A JP7667883 A JP 7667883A JP S59201357 A JPS59201357 A JP S59201357A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- sample
- electro
- gun
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Electron Tubes For Measurement (AREA)
Abstract
Description
【発明の詳細な説明】
(イ)産業上の利用分野
本発明は直径が数μm以下と云った微小領域の分析が可
能な二次イオン質量分析装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a secondary ion mass spectrometer capable of analyzing a minute region with a diameter of several μm or less.
(ロ)従来技術
二次イオン質量分析計は試料面をアルゴンイオン等によ
る一部イオンビームで照射し、試料面から放出される二
次イオンを質量分析するものであるが、従来の二次イオ
ン質量分析計では上述したような数μm以下のような局
所の分析を行うだめにはイオン銃として、大形のデュオ
プラズマトロ温
ン形イオン系と大型の静電レンズ系とを必要とするため
装置が高価なものとなった。(b) Conventional technology Secondary ion mass spectrometers irradiate the sample surface with a partial ion beam of argon ions, etc., and mass analyze the secondary ions emitted from the sample surface. A mass spectrometer requires a large duoplasmatrothermal ion system and a large electrostatic lens system as an ion gun in order to perform local analysis of several micrometers or less as described above. The equipment became expensive.
壕だ一般に電気絶縁性の試料の場合、−次イオンによっ
て試料が帯電して放出する二次イオンの電位が変り、分
析系の一部であるエネルギー分析器をイオンが通過でき
なかつたり、イオン源と材料間の電位差が小さくなった
りして本分析法が適用できない場合が多かった。Generally, in the case of an electrically insulating sample, the sample is charged by negative ions, and the potential of the emitted secondary ions changes, causing the ions to be unable to pass through the energy analyzer that is part of the analysis system, or the ion source In many cases, this analysis method could not be applied because the potential difference between the material and the material became small.
(ハ)目 的
本発明はビーム径が数mmと云った程度の簡易型のマク
ロビームイオン銃を用いて、しかも絶縁性試料の微小領
域の分析が可能である二次イオン質量分析計を得ること
を目的とする。(c) Purpose The present invention provides a secondary ion mass spectrometer that uses a simple macro beam ion gun with a beam diameter of several millimeters and is capable of analyzing a minute region of an insulating sample. The purpose is to
(ニ)構 成
本発明二次イオン質量分析計は、試料面を照射スルマク
ロビームのイオン銃例えばBA型イオン銃の他に、0.
1〜100μm径のビーム径が得られるマイクロビーム
電子銃を設け、この電子銃によって試料面上で上記イオ
ン銃から発射される一部イオンビームによって照射され
ている領域内の任意の点を電子ビームで照射することに
より、そイオンとほかの部分からの二次イオンを区別す
ることを可能とし、この低エネルギーの二次イオンを選
択して質量分析を行うことを特徴とする。(d) Configuration The secondary ion mass spectrometer of the present invention uses an ion gun that uses a macro beam to irradiate a sample surface, such as a BA-type ion gun, as well as a 0.
A microbeam electron gun capable of obtaining a beam diameter of 1 to 100 μm is provided, and this electron beam can be used to target any point on the sample surface within a region that is partially irradiated by the ion beam emitted from the ion gun. By irradiating it with a ion beam, it is possible to distinguish that ion from secondary ions from other parts, and this low-energy secondary ion is selected for mass spectrometry.
実施例
第1図は本発明の一実施例を示す。1は一部イオンのビ
ームを形成するマクロビームのイオン銃で、Fはフィラ
メント、Gはグリッド、Rけリベラ電極である。リペラ
電極R内にアルゴン等のガスが導入されており、フィラ
メントFとグリ・ラド0間で加速された電子によって同
ガスの原子がイオン化される。Lけ静電レンズ系を構成
しており、−次イオンビームを試料2上に収束させてい
る。Embodiment FIG. 1 shows an embodiment of the present invention. 1 is a macro beam ion gun that partially forms a beam of ions, F is a filament, G is a grid, and R-shaped liberator electrode. A gas such as argon is introduced into the repeller electrode R, and atoms of the gas are ionized by electrons accelerated between the filament F and Gri-Rad 0. It constitutes an L-sized electrostatic lens system, and focuses the -order ion beam onto the sample 2.
なお本イオン銃の場合このイオンを試料上に収束させる
ことを前提としている。3は電子光学系で、fはフィラ
メント、Wはウェネルト電極、l、 l’は静電レン
ズ系で縮小投影系を構成しており、試料2表面に電子源
の微小像を形成し、その径は0゜1〜100μmの範囲
で調節できる。更に走査電極で電子ビームを試料2の表
面でX、 Y両方向へ振らせることができる。イオン
銃1と電子光学系3とは夫々の光軸が試料2の表面で交
わるようにしてあり、第2図に示すように電子ビームE
は試料2表面上で一部イオンビームエの広い照射範囲内
の微小領域を照射するようになっている。試料2が電気
絶縁性である場合、正の一部イオンの照射を受けると、
照射領域は正に帯電し、帯電した電位のため二次イオン
のエネルギーに変化が起も所が電子ビームEでこの一部
イオンによる照射領域を走査すると、電子ビームで照射
されている場所では試料面の一部イオンによる帯電が中
和され、その場所からエネルギー分析器を通過すること
ができる二次イオンが放出されることになる。In the case of this ion gun, it is assumed that the ions are focused onto the sample. 3 is an electron optical system, f is a filament, W is a Wehnelt electrode, l and l' are electrostatic lens systems, which form a reduction projection system, which forms a minute image of the electron source on the surface of the sample 2, and its diameter. can be adjusted in the range of 0°1 to 100 μm. Furthermore, the scanning electrode allows the electron beam to be swung in both the X and Y directions on the surface of the sample 2. The ion gun 1 and the electron optical system 3 are arranged so that their respective optical axes intersect at the surface of the sample 2, and as shown in FIG.
The ion beam is designed to partially irradiate a small area on the surface of the sample 2 within a wide irradiation range of the ion beam. When sample 2 is electrically insulating, when irradiated with positive partial ions,
The irradiated area is positively charged, and the charged potential causes a change in the energy of the secondary ions. When the electron beam E scans the irradiated area by some of the ions, the sample The charge caused by some ions on the surface is neutralized, and secondary ions are released from that location that can pass through the energy analyzer.
第1図に戻って、4は球面電場型のイオンエネルギー分
析器で、試料2の表面から放出される低エネルギーの二
次イオンだけが通過できるようにしである。5は質量分
析器で、この実施例では四重離型の質量分析器が用いら
れているが、これは磁場型のものでもよい。6はイオン
検出器であり、その出力信号は増幅器7で増幅されて記
録計8に人力され、記録計8によって質量スペク)/し
が記録される。或は一つの特定の質量のイオンだけが検
出されるように質量分析器5の印加電圧を設定しておき
、増幅器7の出力をCRT9に輝度信号として入力し、
CRT9と電子光学系3とで同期的に走査させて、試料
面上の特定元素の分布、Cターンを表示させることもで
きる0
(へ)効 果
本発明によればイオン銃として構造の簡単なもの、要す
るにイオンビームを細く絞れない型のイオン銃を用いて
いるので、装置価格が安価になシ、しかも−次イオンビ
ームが比較的太いにもか\わらず、一般的容易に得られ
る細い電子ビームを利用することにより、絶縁性の試料
の局所分析が可能となった。Returning to FIG. 1, 4 is a spherical electric field type ion energy analyzer, which allows only low-energy secondary ions emitted from the surface of the sample 2 to pass through. Reference numeral 5 denotes a mass spectrometer, and although a quadruple separation type mass spectrometer is used in this embodiment, it may also be of a magnetic field type. Reference numeral 6 denotes an ion detector, and its output signal is amplified by an amplifier 7 and inputted to a recorder 8, which records the mass spectrum. Alternatively, the applied voltage of the mass analyzer 5 is set so that only ions of one specific mass are detected, and the output of the amplifier 7 is inputted to the CRT 9 as a brightness signal,
By synchronously scanning the CRT 9 and the electron optical system 3, it is possible to display the distribution of specific elements on the sample surface and the C-turn. In short, since it uses an ion gun that cannot focus the ion beam into a narrow one, the equipment cost is low, and even though the ion beam is relatively thick, it is generally easy to obtain a thin beam. By using an electron beam, local analysis of insulating samples has become possible.
第1図は本発明の一実施例装置の側面図、第2図は本発
明における一部イオンビームと電子ビームとの試料面上
における関係を示す側面図である。
1・・・イオン銃、?・・・試料、3・・・電子光学系
、4・・・イオンエネルギー分析器、5・・・質量分析
器、6・・・イオン検出器。
代理人 弁理士 縣 浩 介FIG. 1 is a side view of an apparatus according to an embodiment of the present invention, and FIG. 2 is a side view showing the relationship between a partial ion beam and an electron beam on a sample surface in the present invention. 1...Ion gun? ... Sample, 3... Electron optical system, 4... Ion energy analyzer, 5... Mass spectrometer, 6... Ion detector. Agent Patent Attorney Kosuke Agata
Claims (1)
ームイオン銃と、試料面の上記−次イオンビームによる
照射域内の任意の微小領域を電子ビームで照射する電子
光学系と、試料面から放出される二次イオンに対するエ
ネルギー分析手段と、同手段を通過したイオンが入射せ
しめられる質量分析手段とよりなる二次イオン質量分析
計。A macro beam ion gun that generates a partial ion beam that irradiates the sample surface, an electron optical system that irradiates an arbitrary micro region within the irradiation area of the above-mentioned secondary ion beam on the sample surface with an electron beam, and a macro beam ion gun that generates a partial ion beam that irradiates the sample surface. A secondary ion mass spectrometer comprises energy analysis means for secondary ions that pass through the energy analysis means, and mass analysis means into which ions that have passed through the energy analysis means are incident.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58076678A JPS59201357A (en) | 1983-04-30 | 1983-04-30 | Secondary ion mass spectrometer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58076678A JPS59201357A (en) | 1983-04-30 | 1983-04-30 | Secondary ion mass spectrometer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59201357A true JPS59201357A (en) | 1984-11-14 |
JPH0547933B2 JPH0547933B2 (en) | 1993-07-20 |
Family
ID=13612086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58076678A Granted JPS59201357A (en) | 1983-04-30 | 1983-04-30 | Secondary ion mass spectrometer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59201357A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0200333A2 (en) * | 1985-04-24 | 1986-11-05 | Micrion Limited Partnership | Ion beam processing method and apparatus |
EP2355125A3 (en) * | 2010-01-28 | 2012-04-25 | Carl Zeiss NTS GmbH | Particle beam device and method for operation of a particle beam device |
-
1983
- 1983-04-30 JP JP58076678A patent/JPS59201357A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0200333A2 (en) * | 1985-04-24 | 1986-11-05 | Micrion Limited Partnership | Ion beam processing method and apparatus |
EP2355125A3 (en) * | 2010-01-28 | 2012-04-25 | Carl Zeiss NTS GmbH | Particle beam device and method for operation of a particle beam device |
Also Published As
Publication number | Publication date |
---|---|
JPH0547933B2 (en) | 1993-07-20 |
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