JPS6049546A - Complex analytical device - Google Patents

Complex analytical device

Info

Publication number
JPS6049546A
JPS6049546A JP58158306A JP15830683A JPS6049546A JP S6049546 A JPS6049546 A JP S6049546A JP 58158306 A JP58158306 A JP 58158306A JP 15830683 A JP15830683 A JP 15830683A JP S6049546 A JPS6049546 A JP S6049546A
Authority
JP
Japan
Prior art keywords
ion
electron
sample
gun
optical axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58158306A
Other languages
Japanese (ja)
Other versions
JPH057823B2 (en
Inventor
Akio Hori
彰男 堀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP58158306A priority Critical patent/JPS6049546A/en
Publication of JPS6049546A publication Critical patent/JPS6049546A/en
Publication of JPH057823B2 publication Critical patent/JPH057823B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252Tubes for spot-analysing by electron or ion beams; Microanalysers

Abstract

PURPOSE:To simplify adjustment by arranging magnetic lenses and electrostatic lenses on the optical axis of an ion source device serving as both an ion gun and an electron gun while arranging plural analytical devices so as to watch a sample on the irradiation point thereof. CONSTITUTION:Magnetic lenses 21, 22 and electrostatic lenses 31, 32 are arranged on an optical axis A of a duoplasmatron 1 of an ion source serving as both an ion gun and an electron gun in order to irradiate the same spot of a sample S by means of an ion beam and an electron beam. Further, an energy analyzer 4 is provided so as to watch the point of intersection O of the surface of the sample S and the optical axis A for getting an Auger electron detection signal through an electron detector 5 while arrangeing an X-ray spectroscope consisting of a spectrocrystal 7 and an X-ray detector 8 in the position for watching the point of intersection O. Accordingly, as two kinds of beams are radiated on the same point of the sample S, the adjustment is simplified thus making it possible to perform complex analysis with enhanced utilization rate of a space.

Description

【発明の詳細な説明】 ビ)産業上の利用分野 本発明は、試料面をイオンビームと電子ビームの両方で
照射し、イオンビームによって試料面を削りながら電子
ビームの照射によって励起された試料から放射されるオ
ージェ電子のエネルギー分析を行い、或は試料から出る
X線について分光分析を行い、更に或はイオンビーム照
射によって試料面から出る二次イオンの質量分析を行う
等の各種の分析方法を実施することができる複合分析装
置に関する。
Detailed Description of the Invention B) Industrial Application Field The present invention irradiates a sample surface with both an ion beam and an electron beam, and while the sample surface is scraped by the ion beam, the sample surface is removed from the sample excited by the electron beam irradiation. Various analysis methods are used, such as energy analysis of emitted Auger electrons, spectroscopic analysis of X-rays emitted from the sample, and mass spectrometry of secondary ions emitted from the sample surface by ion beam irradiation. The present invention relates to a complex analysis device that can be implemented.

(ロ) 従来技術 従来、イオンエツチングをしなからオージェ電子分光を
行う分析装置では、第1図に示すようにイオン銃Giと
電子銃Geとが別になっておシ、イオンビームを試料面
に収束させるイオン光学系と電子ビームを試料面に収束
させる電子光学系とは夫々の光軸A1とAeが試料S面
上で交差するように構成されていた。この種の分析装置
では云うまでもなく、イオンビームと電子ビームとは試
料面の同一個所を照射するようになっていることが必要
であるが、上述した従来装置ではイオン光学系と電子光
学系とが別になっているから両方のビームが試料面の同
一個所を照射するようにするだめの装置の調整が大へん
困離で、調整には多大の労力を費していた。まだAMは
オージェ電子分光用のエネルギー分析器であるが、イオ
ン源装置が空間を占領しているので、他の分析装置を配
置するスペースが得難い。
(b) Prior Art Conventionally, in analyzers that perform Auger electron spectroscopy after ion etching, the ion gun Gi and electron gun Ge are separate, as shown in Figure 1, and the ion beam is directed onto the sample surface. The ion optical system for converging and the electron optical system for converging the electron beam on the sample surface were configured such that their respective optical axes A1 and Ae intersect on the sample S surface. Needless to say, in this type of analyzer, the ion beam and electron beam must be able to irradiate the same spot on the sample surface, but the conventional analyzer described above requires an ion optical system and an electron optical system. Because the beams are separate from each other, it is extremely difficult to adjust the equipment so that both beams illuminate the same spot on the sample surface, and a great deal of effort is required to do so. AM is still an energy analyzer for Auger electron spectroscopy, but since the ion source device occupies space, it is difficult to obtain space for arranging other analysis devices.

(ハ) 目 的 料の同一個所を照射するような構成を提供することを目
的とするもので、これによって」二連した二種のビーム
が試料面の同一個所を照射するようにするための調整の
困難を解消し、空間の利用率を高めて始めに述べたよう
な複合分析装置を可能にした。
(c) The purpose is to provide a configuration that irradiates the same part of the target material, and thereby allows two types of beams to irradiate the same part of the sample surface. This solved the difficulty of adjustment and increased the efficiency of space utilization, making it possible to create a complex analytical device as mentioned at the beginning.

(ニ)構 成 イオン銃から負イオンを取出すとき、同時に電子も引出
されて来る。本発明はこの点に着眼し、イオン銃と電子
銃とを共用し、この共用の銃を含む一つの光軸上に静電
レンズと磁気レンズとを配置し、イオンビームと電子ビ
ーノ、とを共軸的に形成して試料を照射するようにした
m合分析装置を提供するものである。
(d) Configuration When negative ions are extracted from the ion gun, electrons are also extracted at the same time. Focusing on this point, the present invention shares an ion gun and an electron gun, arranges an electrostatic lens and a magnetic lens on one optical axis including the shared gun, and combines the ion beam and electron beam. The object of the present invention is to provide an m-combination analyzer that is formed coaxially and irradiates a sample.

例えばイオン源としてデュオプラズマトロンを用い負イ
オンを取出す場合、l0KVで作動させたときイオン電
流は10μ八程度、これに対して電子電流は1mA程度
である。同じ加速電圧の場合、静電レンズはイオンに対
しても電子に対しても同じ光学的特性を示すが、磁気レ
ンズは荷電粒子の質量によって光学的特性が異る。従っ
て一軸上に静電レンズと磁気レンズを配置することによ
って、同−銃から引出された負イオンと電子の量比を任
意に制御して、試料の同一個所をイオンビームと電子ビ
ームで照射することが可能となる。
For example, when a duoplasmatron is used as an ion source to extract negative ions, the ion current is about 10 μ8 when operated at 10 KV, whereas the electron current is about 1 mA. At the same accelerating voltage, electrostatic lenses exhibit the same optical properties for ions and electrons, but magnetic lenses have different optical properties depending on the mass of the charged particles. Therefore, by arranging an electrostatic lens and a magnetic lens on one axis, the ratio of negative ions and electrons extracted from the gun can be arbitrarily controlled, and the same part of the sample can be irradiated with an ion beam and an electron beam. becomes possible.

(ホ)実施例 第2図は本発明の一実施例を示す。1はイオン銃と電子
銃と兼用したイオン源のデュオプラズマトロンである。
(E) Embodiment FIG. 2 shows an embodiment of the present invention. 1 is an ion source duoplasmatron that serves as both an ion gun and an electron gun.

2]、、22は磁気レンズ、31゜32は静電レンズで
、これらはイオン源1を含む光軸A上に配置されている
。Sは試料である。4は荷電粒子のエネルギー分析器、
5は電子検出器である。エネルギー分析器4は試料Sの
表面と光軸Aとの交点Oをにらむように設置されており
、0点から放出された電子のうちエネルギー分析器4に
印加された直流電圧に応じた特定のエネルギーを特った
ものがスリット6上に収束するようになっており、エネ
ルギー分析器に印加される直流電圧に微小振幅の交流電
圧を重畳し、電子検出器5の出力から同じ周波数の交流
成分を取出すことによってオージェ電子検出信号を得る
ことができる。図で電子検出器5を4電極質量分析器と
し、その後にイオン検出器を配置した構成にすると試料
Sをイオンビームで照射したとき、試料から放出される
2次イオンの質量分析を行うことができる。実際問題と
して、電子検出器5を4電極質量分析器と交換すること
は構造上困難であるから、この実施例では図の都合上示
してないが、2次イオン質量分析用のエネルギー分析器
が0点をにらむように設置されておシ、その後に質量分
析器及びイオン検出器が配置しである。7は試料S上の
0点から放射されるX線を分光する分光結晶、8はX線
検出器で、これらは0点をにらむX線分光器を構成して
いる。
2], 22 are magnetic lenses, 31.degree. and 32 are electrostatic lenses, and these are arranged on the optical axis A that includes the ion source 1. S is a sample. 4 is a charged particle energy analyzer,
5 is an electron detector. The energy analyzer 4 is installed so as to look at the intersection O between the surface of the sample S and the optical axis A, and the energy analyzer 4 is installed so as to look at the intersection O between the surface of the sample S and the optical axis A. The specific energy is converged on the slit 6, and by superimposing a minute amplitude AC voltage on the DC voltage applied to the energy analyzer, an AC component of the same frequency is extracted from the output of the electron detector 5. An Auger electron detection signal can be obtained by extracting the In the figure, if the electron detector 5 is a four-electrode mass spectrometer and the ion detector is placed after it, it is possible to perform mass analysis of the secondary ions emitted from the sample when the sample S is irradiated with an ion beam. can. As a practical matter, it is structurally difficult to replace the electron detector 5 with a four-electrode mass spectrometer, so an energy analyzer for secondary ion mass spectrometry is installed, although it is not shown in this example for reasons of illustration. It is installed so as to stare at the zero point, and a mass spectrometer and an ion detector are placed behind it. Reference numeral 7 denotes a spectroscopic crystal for dispersing X-rays emitted from the zero point on the sample S, and 8 an X-ray detector, which constitute an X-ray spectrometer that focuses on the zero point.

第3図は上述実施例におけるイオン及び電子光学系の作
用を説明する図である。図で実線で示した工はイオンビ
ーム、点線で示しだEは電子ビームである。イオン源1
から出射するイオンも電子も同じ加速電圧で加速されて
いるから同じエネルギーを持っている。このような場合
磁気インズは電子に比し著るしく質mが犬であるイオン
に対しては殆んど作用せず、電子ビームEだけが磁気レ
ンズ2まで11点に収束する。磁気レンズ22内に絞、
!1l19が配置してあり、レンズ21の強さを調節し
て11点と絞#)9との間の距離を変えることによって
、絞り9を通過する電子ビームの電流を調節することが
できる。磁気レンズ22は絞り9を通過した電子ビーム
の広がり角αをイオンビームエの広シ角βと略一致させ
、11点の電子線虚像をイオン電子共通線源Q、に形成
するように作用する。このようにして広がり角が一致し
たイオンビームと電子ビームは静電レンズ31.32に
よって全く同じ影響を受けて試料S上の0点に収束せし
められる。
FIG. 3 is a diagram illustrating the operation of the ion and electron optical systems in the above embodiment. In the figure, the solid line indicates the ion beam, and the dotted line E indicates the electron beam. Ion source 1
The ions and electrons emitted from the are accelerated by the same accelerating voltage, so they have the same energy. In such a case, the magnetic ins has almost no effect on ions whose quality m is significantly smaller than that of electrons, and only the electron beam E is focused on 11 points up to the magnetic lens 2. Aperture into the magnetic lens 22,
! The current of the electron beam passing through the aperture 9 can be adjusted by adjusting the strength of the lens 21 and changing the distance between the 11 points and the aperture 9. The magnetic lens 22 acts to make the spread angle α of the electron beam that has passed through the aperture 9 approximately coincide with the wide angle β of the ion beam A, and to form an 11-point electron beam virtual image on the ion-electron common source Q. . The ion beam and electron beam, whose spread angles match in this way, are influenced by the electrostatic lenses 31 and 32 in exactly the same way and are converged to the zero point on the sample S.

(へ)効 果 本発明は上述したようにイオンビームと電子ビームとで
試料を照射する分析装置において、イオン源と電子源と
を共通にし、同一光学系に」:って試料上に収束させる
から、従来例のような困難な組立て調整の作業なしに、
正確に試別上の同一点をイオンビームと電子ビームで照
射することができ、イオン光学系と電子光学系が共通で
あるから、試料の周囲全部を各種分析装置の配置空間と
することができ、イオンエツチングで試料面を削除しな
からオージェ電子分光分析でけでなく、X線分光、2次
イオン質量分析等種々な分析法を同時に実行することが
できる。
(f) Effect As described above, the present invention provides an analyzer that irradiates a sample with an ion beam and an electron beam, in which the ion source and the electron source are used in common, and the beams are focused onto the sample using the same optical system. Therefore, there is no need for difficult assembly and adjustment work as in the conventional case.
Since the same point on the sample can be irradiated with the ion beam and electron beam accurately, and the ion optical system and electron optical system are common, the entire area around the sample can be used as a space for various analysis devices. Since the sample surface is removed by ion etching, not only Auger electron spectroscopy analysis but also various analysis methods such as X-ray spectroscopy and secondary ion mass spectrometry can be performed simultaneously.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例の装置の側面図、第2図は本発明の一実
施例の側面図、第3図は同実施例の荷電粒子線光学系の
作用説明図である。 1・・・イオン源と電子源兼用のイオン源、2.1. 
2゜2・・・磁気レンズ、31.32・・・静電レンズ
、4・・・エネルギー分析器、5・・・電子検出器、7
・・・X線分光結晶、8・・・X線検出器、9・・・絞
り、S・・・試料、E・・・電子ビーム、■・・・イオ
ンビーム。 代理人 弁理士 昧 浩 介
FIG. 1 is a side view of a conventional device, FIG. 2 is a side view of an embodiment of the present invention, and FIG. 3 is an explanatory diagram of the operation of the charged particle beam optical system of the same embodiment. 1... Ion source serving as both an ion source and an electron source, 2.1.
2゜2...Magnetic lens, 31.32...Electrostatic lens, 4...Energy analyzer, 5...Electron detector, 7
...X-ray spectrometer crystal, 8...X-ray detector, 9...aperture, S...sample, E...electron beam, ■...ion beam. Agent Patent Attorney Kosuke Mai

Claims (1)

【特許請求の範囲】[Claims] イオン銃と電子銃とを兼ねたイオン源装置と、このイオ
ン源装置を含む一つの光軸上に配置された磁気レンズと
静電レンズと、」二記光11+上に配置された試料面の
イオンビーム及び電子ビーム照射点をにらむように同試
料の周囲に配置される複数種の分析装置とよシなる複合
分析装置。
An ion source device that serves as both an ion gun and an electron gun, a magnetic lens and an electrostatic lens that are arranged on one optical axis including this ion source device, and A complex analysis device similar to multiple types of analysis devices placed around the same sample so as to face the ion beam and electron beam irradiation points.
JP58158306A 1983-08-29 1983-08-29 Complex analytical device Granted JPS6049546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58158306A JPS6049546A (en) 1983-08-29 1983-08-29 Complex analytical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58158306A JPS6049546A (en) 1983-08-29 1983-08-29 Complex analytical device

Publications (2)

Publication Number Publication Date
JPS6049546A true JPS6049546A (en) 1985-03-18
JPH057823B2 JPH057823B2 (en) 1993-01-29

Family

ID=15668742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58158306A Granted JPS6049546A (en) 1983-08-29 1983-08-29 Complex analytical device

Country Status (1)

Country Link
JP (1) JPS6049546A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215856U (en) * 1988-07-11 1990-01-31

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145186A (en) * 1974-05-10 1975-11-21
JPS58110956U (en) * 1982-01-22 1983-07-28 株式会社日立製作所 Charged particle irradiation device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145186A (en) * 1974-05-10 1975-11-21
JPS58110956U (en) * 1982-01-22 1983-07-28 株式会社日立製作所 Charged particle irradiation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215856U (en) * 1988-07-11 1990-01-31

Also Published As

Publication number Publication date
JPH057823B2 (en) 1993-01-29

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