JPS59195850A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain the semiconductor device having a high humidity resistance and a long-term reliability by covering the periphery of chip parts soldered onto a multilayer substrate such as a chip carrier and a chip condenser with a cap which is filled with curing filler. CONSTITUTION:For a chip carrier 2, a cap 7 made of plastic is stuck to a multilayer substrate 1 in N2 gas 8 atmosphere to form a protective coating and the periphery of these is covered with curing epoxy resin 10, which is crowned with a metal cap 9 made of brass or Al. After crowning with the metal cap 9, a metallic covering member 11 crowns said metal cap 9 by welding with laser beam in order to prevent an invasion of humidity from the upper part where the epoxy resin 10 is exposed. Meanwhile, a projecting part of a lead 4 is fixed by a non-conductive adhesive 12 in order to prevent a short with the metal cap 9.

Description

[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a semiconductor device, and particularly to a single-in semiconductor device.
Line package (Single-in-1i)
ne pacltage (hereinafter abbreviated as SIP) type semiconductor device.

[Technical Background of the Invention] As shown in FIG. 1, a conventional SIP type semiconductor device is manufactured by directly mounting chip components such as a chip carrier 2 such as an IC memory and a chip capacitor 3 on a multilayer substrate made of ceramic or the like. It was configured by attaching it.

[Problems with Background Art] However, in such conventional SIP type semiconductor devices, chip components such as the chip carrier 2 and the chip capacitor 3 are directly soldered onto the multilayer substrate 1; For example, when general environmental tests such as thermal shock tests, moisture resistance tests, high-temperature storage tests, and temperature cycle tests are performed, soldering between the multilayer board 1 and the chip components of the chip carrier 2 and chip capacitor TL-3W However, there are disadvantages in that parts deteriorate, the chip components tend to come off from the multilayer substrate 1, and the characteristics of the chip components tend to deteriorate rapidly.

``Object of the Invention J The present invention was made to solve these drawbacks, and an object thereof is to provide a semiconductor device that is highly moisture resistant and has long-term reliability.

[Summary of the Invention J That is, the present invention relates to a semiconductor device in which chip components such as a chip carrier and a chip capacitor are soldered onto a multilayer substrate made of ceramic or the like. This semiconductor device is characterized in that the outer periphery of a chip component such as the above is covered with a cap, and the cap is filled with a hardening 4 filler.

[Embodiments of the Invention] The details of the present invention will be described below with reference to the drawings and embodiments.

FIG. 2 is a sectional view showing an embodiment of the semiconductor device according to the present invention. In the figure, reference numeral 1 denotes a multilayer board made of ceramic or the like, and a chip carrier 2 such as an IC memory is soldered onto this multilayer board, and the chip carrier 2 and electrodes 5 are connected by Au wires 6 with a diameter of 25μ to 30μ. It is bonded. Other chip components such as chip capacitors (not shown) are also soldered onto the multilayer substrate 1. For the chip carrier 2,
A plastic kit 7 is bonded to the multilayer substrate 1 in an atmosphere of N2 gas 8 to form a protective coating, and its surroundings are filled with hardening epoxy resin 10, and the outside is covered with brass, aluminum, etc. A metal cap 9 made of is attached. After this metal cap 9 is capped, a gold FA lid 11 is welded to the metal cap 9 using a laser beam to prevent moisture from entering through the exposed portion of the epoxy resin 10 on the top surface. .

On the other hand, the protruding portion of the lead 4 is fixed with a non-conductive adhesive 12 to prevent short-circuiting with the metal main 11 knob 9. In this way, in step 1), the chip carrier 2 and the chip components such as the chip capacitor are completely sealed in the metal cap 9 and the metal lid 11, and a highly moisture-resistant semiconductor device is obtained.

FIG. 3 shows another embodiment of the semiconductor device according to the present invention, which differs from the embodiment in FIG.
It is constructed by botting silicone 13 onto a chip component such as a chip capacitor 2.

The other constituent parts of this embodiment are the same as those of the embodiment shown in FIG. 2, so their explanation will be omitted.

FIG. 4 is a sectional view showing a third embodiment of the semiconductor device according to the present invention. In this embodiment, a metal cap 9a made of Kovar or 42Fe/Ni alloy is welded to the metallized portion 1a of the multilayer substrate 1 using a laser beam, and is directly sealed onto the multilayer substrate 1. The other components of this embodiment are the same as those of the embodiment shown in FIG. 2, so their explanation will be omitted.

[Effect of the invention] As described above, in the semiconductor device of the present invention, C
By covering the outer periphery of a chip component such as a chip carrier with a cap and filling the cap with a curable filler, the cap has excellent moisture resistance and high long-term reliability.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a conventional semiconductor device, FIG. 2 is a cross-sectional view showing an embodiment of the present invention, FIG. 3 is a cross-sectional view showing an embodiment of the present invention, and FIG. FIG. 7 is a sectional view showing a third embodiment of the invention. 1...Multilayer board 2...Chip carrier 3...
・・・・・・・・・Chip capacitor 4・・・・・・・・・
...Lead 7...Cap 8...N2 gas 9.9a...Metal cap 10... ......Filler 11...Metal lid body 12...
......Non-conductive adhesive 13...
...Silicone patent attorney Suyama Buddha - Figure 1 Figure 2 Figure 3 Figure 4

Claims (6)

[Claims] (1) In semiconductor devices in which chip parts such as chip carriers and chip capacitors are soldered onto a multilayer board made of ceramic etc., the outer periphery of the chip parts such as chip carriers and chip capacitors soldered onto the multilayer board is A semiconductor device characterized by being covered with a cap and filling the gap with a curable filler. (2) The semiconductor device according to claim 1, wherein a protective coating is provided on the outer periphery of the chip component that is inside the cap, and the curable filler is filled between the cap and the protective coating. (3) The semiconductor device according to claim 2, wherein the protective covering is a plastic cap. (4) The semiconductor device according to claim 2, wherein the protective coating is a silicone bodding layer. (5) The semiconductor device according to any one of claims 1 to 4, wherein the cap is a metal cap. (6) The semiconductor device according to claim 5, wherein the opening of the metal cap is covered with a metal lid or a multilayer substrate and sealed by welding with a laser beam.