JPS5919343A - 半導体ウエハ−低温試験装置 - Google Patents

半導体ウエハ−低温試験装置

Info

Publication number
JPS5919343A
JPS5919343A JP12932182A JP12932182A JPS5919343A JP S5919343 A JPS5919343 A JP S5919343A JP 12932182 A JP12932182 A JP 12932182A JP 12932182 A JP12932182 A JP 12932182A JP S5919343 A JPS5919343 A JP S5919343A
Authority
JP
Japan
Prior art keywords
probe
probe card
semiconductor wafer
card
dewar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12932182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236387B2 (enrdf_load_stackoverflow
Inventor
Masao Okubo
昌男 大久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Electronic Materials Corp
Original Assignee
Japan Electronic Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Electronic Materials Corp filed Critical Japan Electronic Materials Corp
Priority to JP12932182A priority Critical patent/JPS5919343A/ja
Publication of JPS5919343A publication Critical patent/JPS5919343A/ja
Publication of JPS6236387B2 publication Critical patent/JPS6236387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP12932182A 1982-07-23 1982-07-23 半導体ウエハ−低温試験装置 Granted JPS5919343A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12932182A JPS5919343A (ja) 1982-07-23 1982-07-23 半導体ウエハ−低温試験装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12932182A JPS5919343A (ja) 1982-07-23 1982-07-23 半導体ウエハ−低温試験装置

Publications (2)

Publication Number Publication Date
JPS5919343A true JPS5919343A (ja) 1984-01-31
JPS6236387B2 JPS6236387B2 (enrdf_load_stackoverflow) 1987-08-06

Family

ID=15006685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12932182A Granted JPS5919343A (ja) 1982-07-23 1982-07-23 半導体ウエハ−低温試験装置

Country Status (1)

Country Link
JP (1) JPS5919343A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084671A (en) * 1987-09-02 1992-01-28 Tokyo Electron Limited Electric probing-test machine having a cooling system
CN111811939A (zh) * 2020-07-21 2020-10-23 上海交通大学 超低温环境下的高精度纳米力学检测系统

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084671A (en) * 1987-09-02 1992-01-28 Tokyo Electron Limited Electric probing-test machine having a cooling system
CN111811939A (zh) * 2020-07-21 2020-10-23 上海交通大学 超低温环境下的高精度纳米力学检测系统

Also Published As

Publication number Publication date
JPS6236387B2 (enrdf_load_stackoverflow) 1987-08-06

Similar Documents

Publication Publication Date Title
JP3867158B2 (ja) 極低温容器およびそれを用いた磁性測定装置
EP1811280B1 (en) Automatic sliced piece fabricating apparatus and automatic sliced piece sample fabricating apparatus
KR920001671A (ko) 집적회로 시험장치 및 방법
CN112485198B (zh) 一种高低温原位光谱反应池
Haul et al. Diffusion in calcite crystals on the basis of isotopic exchange with carbon dioxide
US3978686A (en) Process for transferring and/or handling of a cold tissue section especially obtained from an ultramicrotome and arrangements for practice of the process
JPH0697246A (ja) 低温における半導体材料の性質を試験する装置および方法
JPS5919343A (ja) 半導体ウエハ−低温試験装置
JPS6123939A (ja) 試料の低温固定装置
US3398549A (en) Apparatus for regulating at low temperatures
JPH01278739A (ja) 半導体ウェハー低温試験装置
JP2551875B2 (ja) 超電導コイルの冷却装置
JPS6246265Y2 (enrdf_load_stackoverflow)
JPH01156678A (ja) 極低温lsi試験方式
EP1034449B1 (en) Temperature control for microscopy
JPS6314858A (ja) 真空蒸着装置
JP2005083853A (ja) 走査形プローブ顕微鏡
JP2766667B2 (ja) 凍結試料移送装置
Panagopoulos et al. The effects of gaseous helium and nitrogen on the thermopower measurements: a note of concern for the discrepancy of the results observed in high temperature superconductors
JPS635541A (ja) 半導体ウエハ測定装置
RO138350A2 (ro) Instalaţie pentru control termic al unei incinte vidate, în domeniul -196°c...+200°c
RU2006734C1 (ru) Безвакуумный криостат
JP2008076224A (ja) 温度サイクル試験装置及び温度サイクル試験方法
JP3071197B2 (ja) 閉鎖型半導体湿式熱酸化装置
Cooper Moisture exclusion from encapsulation of long-life transistors