JPS59191136A - Magnetic recording medium and its production - Google Patents

Magnetic recording medium and its production

Info

Publication number
JPS59191136A
JPS59191136A JP58063723A JP6372383A JPS59191136A JP S59191136 A JPS59191136 A JP S59191136A JP 58063723 A JP58063723 A JP 58063723A JP 6372383 A JP6372383 A JP 6372383A JP S59191136 A JPS59191136 A JP S59191136A
Authority
JP
Japan
Prior art keywords
magnetic recording
alloy
magnetic
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58063723A
Other languages
Japanese (ja)
Other versions
JPH0320813B2 (en
Inventor
Sadao Kadokura
貞夫 門倉
Kazuhiko Honjo
和彦 本庄
Kiyoshi Takekata
武方 清
Masuhiro Kamei
亀井 斗礼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP58063723A priority Critical patent/JPS59191136A/en
Publication of JPS59191136A publication Critical patent/JPS59191136A/en
Publication of JPH0320813B2 publication Critical patent/JPH0320813B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/72Protective coatings, e.g. anti-static or antifriction
    • G11B5/725Protective coatings, e.g. anti-static or antifriction containing a lubricant, e.g. organic compounds

Landscapes

  • Lubricants (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To obtain a magnetic recording medium consisting of a Co alloy having an excellent high density recording characteristics and excellent resistance to wear with a head by forming a protective lubricating layer consisting of a thin alloy film composed essentially of Co contg. In on a magnetic recording layer. CONSTITUTION:A thin magnetic film of a Co alloy has the problem in that the hardness is high and that the m.p. is high, but the thin film of the Co alloy added with a metal of low melting point, i.e., In, is considerably improved in wear resistance and the magnetic characteristic thereof is not so much deteriorated as compared with the case in which In is not incorporated in said alloy. The protective lubricating layer is formed by a known PVD method such as vacuum deposition method, sputtering method, etc. like with the magnetic recording layer and the distribution of the concn. of In in the film thickness direction is easily controlled if said film is formed by an opposed target type sputtering method. The content of In in the protective lubricating layer is preferably 0.5-20at% (atomic per cent).

Description

【発明の詳細な説明】 〔利用分野〕 本発明は高密度記録に適しだCo (コバルト)を主成
分とした磁性薄膜を磁気記録層とした磁気記録媒体に関
し、更に精しくは該磁気記録媒体の耐久性を向上させる
技術に関し、特に近年実用化研究の盛んな垂直磁気記録
媒体の耐久性の向上に好適な技術に関する。
[Detailed Description of the Invention] [Field of Application] The present invention relates to a magnetic recording medium having a magnetic recording layer made of a magnetic thin film mainly composed of Co (cobalt), which is suitable for high-density recording, and more specifically relates to the magnetic recording medium. The present invention relates to a technology for improving the durability of perpendicular magnetic recording media, and in particular to a technology suitable for improving the durability of perpendicular magnetic recording media, which has been actively researched for practical use in recent years.

〔従来技術〕[Prior art]

垂直磁気記録に用いられる磁性薄膜としては、膜面に対
して垂直方向に磁化容易軸を有するCo −Cr (ク
ロム)合金、  Co −Cr−Ta (タンタル)合
金、  Co−Cr−Re(レニウム)合金。
Magnetic thin films used for perpendicular magnetic recording include Co-Cr (chromium) alloys, Co-Cr-Ta (tantalum) alloys, and Co-Cr-Re (rhenium), which have an axis of easy magnetization perpendicular to the film surface. alloy.

Co −Cr −W (タングステン)合金、Co−C
r−M。
Co-Cr-W (tungsten) alloy, Co-C
r-M.

(モリブデン)合金、  Co −V (バナジウム)
合金などのCo系合金が提案されている。又、現在使用
されている面内記録用の磁性薄膜としてCo −Ni 
(=ツケル)合金、Co−Pt(白金)合金、  Co
 −P (’)ン)などのCo系合金が提案されて因る
(molybdenum) alloy, Co-V (vanadium)
Co-based alloys such as alloys have been proposed. In addition, Co-Ni is currently used as a magnetic thin film for in-plane recording.
(=Tsukeru) alloy, Co-Pt (platinum) alloy, Co
-P(')N) and other Co-based alloys have been proposed.

上記Coを主成分としたCo系合金は高密度記録に適し
た磁気特性を有しているが、実用面から下記の問題が未
解決である。
Although the Co-based alloy containing Co as a main component has magnetic properties suitable for high-density recording, the following problems remain unsolved from a practical standpoint.

すなわち、磁気記録・再生時に磁気ヘッドと磁気記録層
表面とを密着するのが最も安定かつ大きな電気信号を得
ることが出来るが、このようにするとCo系合金の磁性
薄膜は基板から短時間で剥離・欠落し、耐久性に乏しい
In other words, the most stable and large electrical signal can be obtained by bringing the magnetic head into close contact with the surface of the magnetic recording layer during magnetic recording/reproduction, but in this way the Co-based alloy magnetic thin film will peel off from the substrate in a short time.・It is missing and has poor durability.

〔目 的〕〔the purpose〕

本発明は、高密度記録特性に秀れかつヘッドとの摩耗性
に秀れたCo系合金からなる磁気記録媒体を提供する。
The present invention provides a magnetic recording medium made of a Co-based alloy that has excellent high-density recording characteristics and excellent abrasion resistance with a head.

〔構成・作用効果〕[Composition/effect]

本発明は、非磁性の基板上に、 Coを主成分とした磁
性薄膜からなる磁気記録層を有する磁気記録媒体におい
て、前記磁気記録層上にInを含むCoを主成分とした
合金薄膜からなる保護潤滑層を形成したととを特徴とす
る磁気記録媒体である。
The present invention provides a magnetic recording medium having a magnetic recording layer made of a magnetic thin film mainly composed of Co on a non-magnetic substrate, wherein the magnetic recording layer is made of an alloy thin film mainly composed of Co containing In on the magnetic recording layer. A magnetic recording medium characterized by forming a protective lubricating layer.

上述の本発明は、Co系合金の磁性薄膜は硬度が高く且
つ融点も高いところに問題があると考え、低融点金属の
Inに着目し種々検討の結果、Inを添加したCo系合
金の薄膜は耐摩耗性が大幅に改善される上、磁気特性も
Inを含まない場合に比べそれ程低下しないことを見出
しなされたものである。
The above-mentioned present invention considers that magnetic thin films of Co-based alloys have problems in that they have high hardness and high melting points, and as a result of various studies focusing on In, a low-melting point metal, a thin film of Co-based alloys containing In has been developed. It was discovered that the wear resistance was significantly improved, and the magnetic properties did not deteriorate much compared to the case where In was not included.

本発明の保護潤滑層は、上述の通り磁気記録層と同様C
o系合金であるので、磁気記録層との界面でのなじみが
良く、高い密着強度が期待できる。また、この場合、保
護潤滑層は従来の保護層と異なりその磁気特性は磁気記
録層と似たものとなるので、保護層を設けたことによる
記録再生特性の損失は大幅に低下する。かかる点から、
保護潤滑層のCo系合金は、磁気記録層のCo系合金と
同じ組成の合金にInを添加したものであるものが好ま
しい。
As mentioned above, the protective lubricant layer of the present invention has C
Since it is an o-based alloy, it has good compatibility at the interface with the magnetic recording layer, and high adhesion strength can be expected. Furthermore, in this case, unlike conventional protective layers, the protective lubricant layer has magnetic properties similar to those of the magnetic recording layer, so that the loss of recording and reproducing characteristics due to the provision of the protective layer is significantly reduced. From this point,
The Co-based alloy of the protective lubricating layer is preferably an alloy having the same composition as the Co-based alloy of the magnetic recording layer to which In is added.

特に磁気記録層が膜面に垂直方向に磁化容易軸を有する
Co−Cn合金膜等からなる垂直磁化膜の場合は、この
構成では保護潤滑層も垂直磁化膜となり、高密度記録上
非常に有利となる。
In particular, when the magnetic recording layer is a perpendicularly magnetized film made of a Co-Cn alloy film or the like having an axis of easy magnetization perpendicular to the film surface, in this configuration the protective lubricant layer also becomes a perpendicularly magnetized film, which is extremely advantageous for high-density recording. becomes.

なお、保護潤滑層のInの含有量は、上記の点から0.
5〜20 at%(原子パーセント)が好ましい。そし
て、Inの膜表面の潤滑作用等からInの含有量は、同
じ含有量であっても胴表面側で多く磁気記録層側に次第
に低下した分布が好ましい。また、保護潤滑層のa膜厚
は、耐久性面からは厚い程良く、電磁変換面からは薄い
程良く、通常は数X〜数μmの間で選定される。
In addition, from the above point, the In content of the protective lubricating layer is 0.
5 to 20 at% (atomic percent) is preferred. In view of the lubricating effect of the In film surface, etc., even if the In content is the same, it is preferable that the In content be distributed such that it is higher on the cylinder surface side and gradually decreases on the magnetic recording layer side. Further, the thickness of the protective lubricating layer is usually selected from several X to several μm, with the thicker the better from the viewpoint of durability and the thinner the better from the viewpoint of electromagnetic conversion.

ところで、本発明の保護潤滑層は、磁気記録層と同様、
公知の真空蒸着法、スパッタ法。
By the way, the protective lubricant layer of the present invention, like the magnetic recording layer,
Well-known vacuum evaporation method and sputtering method.

イオンブレーティング法等のPVD(物理蒸着)法で形
成されるが、対向ターゲット式スパッタ法で形成する本
発明の第2発明によれば、その膜厚方向のIn濃度分布
が容易に制御できる効果がある。
Although it is formed by a PVD (physical vapor deposition) method such as an ion blasting method, according to the second invention of the present invention, which is formed by a facing target sputtering method, the In concentration distribution in the film thickness direction can be easily controlled. There is.

また、磁気記録層も同様に対向ターゲット式スパッタ法
で形成すると、ポリエステルフィルム等の安価な高分子
フィルムの基板ができる上、同一装置での連続生産が可
能である。
Further, if the magnetic recording layer is similarly formed by the facing target sputtering method, a substrate of an inexpensive polymer film such as a polyester film can be obtained, and continuous production using the same apparatus is possible.

なお、上述の対向ターゲット式スパッタ法は1%開昭5
7−158380号公報等で公知で。
In addition, the above-mentioned facing target sputtering method uses 1%
It is publicly known from Publication No. 7-158380 and the like.

一対の対面させたターゲットの側方に基板を配し、ター
ゲット間に垂直方向のプラズマ捕折用の磁界を印加して
スパッタし、基板上に膜形成するスパッタ法を言う。
A sputtering method in which a substrate is placed on the sides of a pair of facing targets, and a vertical magnetic field for plasma trapping is applied between the targets to perform sputtering to form a film on the substrate.

〔実施例〕〔Example〕

以下、上述の本発明の詳細を実施例に基づいて説明する
Hereinafter, details of the above-mentioned present invention will be explained based on examples.

第1図は本発明の実施に用いた対向ターゲット式スパッ
タ装置の構成図である。
FIG. 1 is a block diagram of a facing target type sputtering apparatus used in carrying out the present invention.

図から明らかな通シ、本装置は基板40の保持手段を除
いて前述の特開昭57−158380号公報等で公知の
ものと同じ構成となっている。
As is clear from the figure, this device has the same structure as that known in the above-mentioned Japanese Patent Laid-Open No. 57-158380, etc., except for the holding means for the substrate 40.

すなわち1図において10は真空槽、20は真空槽10
を排気する真空ポンプ等からなる排気系、30は真空槽
10内に所定のガス1−4 を導入して真空槽10内の圧力を10〜10Torr程
度の所定のガス圧力に設定するガス導入系である。
That is, in Figure 1, 10 is a vacuum chamber, and 20 is a vacuum chamber 10.
30 is a gas introduction system that introduces a predetermined gas 1-4 into the vacuum chamber 10 and sets the pressure inside the vacuum chamber 10 to a predetermined gas pressure of about 10 to 10 Torr. It is.

そして、真空槽10内には、図示の如く真空槽IOの側
板11,12に絶縁部材13゜14を介して固着された
ターゲットホルダー15.16により1対のターゲット
T3.T2 が、そのスパッタされる面’r、sl T
2Bを空間を隔てて平行に対面するように配設しである
。そして、ターゲットTI+ T2とそれに対応するタ
ーゲットホルダー15.16は、水冷ノ(イブ151.
161を介して冷却水によりターゲットTI + T2
 、永久磁石152,162が冷却される。磁石152
.T62はターゲットTI+T2を介してN極、S極が
対向するように設けてあり、従って磁界はターゲットT
、、72に垂直な方向に、かつターゲット間のみに形成
される。なお、17.18は絶縁部材13.14及びタ
ーゲットホルダー15.16をス/(ツタリング時のプ
ラズマ粒子から保護するためとターゲット表面以外の部
分の異常放電を防止するためのクールドである。
Inside the vacuum chamber 10, a pair of targets T3. T2 is its sputtered surface 'r, sl T
2B are arranged so as to face each other in parallel across a space. The target TI+ T2 and its corresponding target holder 15.
Target TI + T2 by cooling water through 161
, the permanent magnets 152, 162 are cooled. magnet 152
.. T62 is provided so that its north and south poles face each other via target TI+T2, so the magnetic field is
, , 72 and only between the targets. Incidentally, reference numerals 17 and 18 are cooled members for protecting the insulating members 13 and 14 and the target holder 15 and 16 from plasma particles during stumbling and for preventing abnormal discharge on parts other than the target surface.

また、磁性薄膜が形成される基板40を保持する基板保
持手段41は、真空槽10内のターゲットTI r T
2の側方に設けである。基板保持手段41は、図示省略
した支持ブラケラトにより夫々回転自在かつ互いに軸平
行に支持された繰り出しロール41a、支持ローlし4
1b1巻取ロール41cの3個のロールからなり、基板
40をターゲラ) T、 、 Ti間の空間に対面する
よう匠スパッタ面TI B I T2 B VC対して
略直角方向に保持するように配置しである。従って基板
40は巻取りロール41cによりスパッタ面Tl5I7
211 に対して直角方向に移動可能である。
Further, the substrate holding means 41 holding the substrate 40 on which the magnetic thin film is formed is connected to the target TI r T in the vacuum chamber 10 .
It is provided on the side of 2. The substrate holding means 41 includes a feed roll 41a and a support roll 4, which are rotatably supported by supporting brackets (not shown) and parallel to each other's axes.
It consists of three rolls, 1b1 and 41c, and is arranged so as to hold the substrate 40 in a direction substantially perpendicular to the sputtering surface so as to face the space between T, , and Ti. It is. Therefore, the substrate 40 is sputtered on the sputtering surface Tl5I7 by the take-up roll 41c.
It is movable in a direction perpendicular to 211.

一方、スパッタ電力を供給する直流電源からなる電力供
給手段50はプラス側をアースに、マイナス側をターゲ
ット”l + T2 K夫々接続する。従って電力供給
手段50からのスノくツタ電力は、アースを7ノードと
し、ターゲットT、 、 T2をカソードとして、アノ
ード、カソード間に供給される。
On the other hand, the power supply means 50, which is a DC power supply that supplies sputtering power, has its positive side connected to the ground, and its negative side connected to the targets "l+T2K".Therefore, the power supplied from the power supply means 50 is connected to the ground. 7 nodes, with targets T, , and T2 as cathodes, and are supplied between the anode and cathode.

なお、プレスパッタ時基板40を保護するため、基板4
0とターゲラ) T+ 、 T2との間に出入するシャ
ッター(図示省略)が設けである。
Note that in order to protect the substrate 40 during pre-sputtering, the substrate 4
A shutter (not shown) is provided between T+ and T2.

以上の通シ、前述の特開昭57−158380号公報と
基本的には同じ構成であるので、公知の通り高速低温ス
パッタが可能となる。すたわち、ターゲットT、 、 
T2間の空間に、磁界の作用によりスパッタガスイオン
、スノ々ツタにより放出されたγ電子等が束縛され高密
度プラズマが形成される。従って、ターゲットT、 、
 T、のスパッタが促進されて前記空間よシ析出量が増
大し、基板40上への堆積速度が増し高速スパッタが出
来る上、基板40がターゲットT、 、 T2の側方に
あるので低温スノくツタも出来る。
Since the above structure is basically the same as that of the above-mentioned Japanese Patent Laid-Open No. 57-158380, high-speed low-temperature sputtering is possible as is known. Therefore, target T, ,
In the space between T2, sputtering gas ions, γ electrons emitted by the vines, etc. are bound by the action of the magnetic field, and a high-density plasma is formed. Therefore, target T, ,
The sputtering of T is promoted, the amount of precipitation increases in the space, the deposition rate on the substrate 40 is increased, high-speed sputtering is possible, and since the substrate 40 is on the side of the targets T, , T2, low-temperature snow Ivy can also grow.

なお、本発明の対向ターゲット式スノ々ツタ法は、前述
の装置に限定されるものでなく、前述の通り一対の対面
させたターゲットの側方に基板を配し、ターゲット間に
垂直方向の磁界を印加してスパッタし、基板上に膜を形
成するスパッタ法を言う。従って、磁界発生手段も永久
磁石でなく、電磁石を用いても良い。また、磁界もター
ゲット間の空間にγ電子等を閉じ込めるものであれば良
く、従ってターゲット全面でなく、ターゲット周囲のみ
に発生させた場合も含む。
Note that the facing target type Snotsuta method of the present invention is not limited to the above-mentioned apparatus, but as mentioned above, a substrate is placed on the side of a pair of facing targets, and a vertical magnetic field is applied between the targets. This is a sputtering method that applies sputtering to form a film on a substrate. Therefore, the magnetic field generating means may also be an electromagnet instead of a permanent magnet. Further, the magnetic field may be one that confines γ electrons and the like in the space between the targets, and therefore includes the case where it is generated not over the entire surface of the target but only around the target.

次に上述の対向ターゲット式スパッタ装置により実施し
た本発明に係わる垂直磁気記録媒体の実施例を説明する
Next, an example of a perpendicular magnetic recording medium according to the present invention, which was implemented using the above-mentioned facing target type sputtering apparatus, will be described.

なお、得られた合金膜の結晶構造は理学電機製計数X線
回折装置を用いて同定し、垂直配向性は六方最密構造か
つ(002)面ピークのロッキングカーブを前記X線回
析装置で求め、その半値幅△θ50で評価した。
The crystal structure of the obtained alloy film was identified using a counting X-ray diffractometer manufactured by Rigaku Denki, and the vertical orientation was determined by the hexagonal close-packed structure and the rocking curve of the (002) plane peak using the X-ray diffractometer. It was evaluated using its half width Δθ50.

膜厚及び組成については、理学電機製螢光X線装置を用
いて予め較正した曲線から求めた。
The film thickness and composition were determined from a curve calibrated in advance using a fluorescent X-ray device manufactured by Rigaku Denki.

耐久性の評価は、クロックメーター(Croakmet
er )  (アトラスエレクトリックデバイス社(米
)製、モデルCM−1)を用いて次のように行なった。
Durability is evaluated using a crockmeter.
er) (manufactured by Atlas Electric Devices (USA), model CM-1) in the following manner.

第2図に示すように、スライドグラス201上に両面接
着テープにより比較するサンプル202,203を並べ
て固定し、接触部材204を図の矢印Aの如く左右に往
復させてサンプル202,203の表面の劣化状況を観
察した。接触部材204の接触面積は1cd、その接触
圧力は900g、速度は3儒/秒、繰シ返し頻度は30
回/分の条件下で、接触部材204の下面の接触面にポ
リエチレンテレ7タレー) (PET )フィルム及び
パーマロイ薄膜(Ni 78%、Fe22%)を夫々接
着して行なった。
As shown in FIG. 2, the samples 202 and 203 to be compared are fixed side by side on a slide glass 201 with double-sided adhesive tape, and the contact member 204 is moved back and forth from side to side as shown by arrow A in the figure to form a surface of the samples 202 and 203. The deterioration status was observed. The contact area of the contact member 204 is 1 cd, the contact pressure is 900 g, the speed is 3 F/sec, and the repetition frequency is 30
The test was carried out by adhering a polyethylene tele-7 (PET) film and a permalloy thin film (78% Ni, 22% Fe) to the contact surface of the lower surface of the contact member 204 under conditions of rotations per minute.

さらに、実際の摩耗特性を測定するために第3図に示す
如く、5uφの固定ピン301にサンプルテープ302
を接触させて上下に3 、3 C:In/ Secの速
度で繰り返し動かし、摩擦係数μの変化及び傷の発生状
況から耐久性を調べた。
Furthermore, in order to measure the actual wear characteristics, as shown in FIG.
were brought into contact with each other and moved up and down repeatedly at a speed of 3.3 C:In/Sec, and the durability was examined from the change in friction coefficient μ and the occurrence of scratches.

なお、摩擦係数μは固定ピン3010入側張力1と出側
張力T2を測定し、公知の下式によシ求めた。
The friction coefficient μ was determined by measuring the inlet tension 1 and the outlet tension T2 of the fixing pin 3010, and using the known formula below.

上式でθは接触角であり、θ−180°に設定した。In the above formula, θ is the contact angle, which was set to θ−180°.

実施例1 前述した第1図の対向ターゲット式スノ(ツタ装置を用
いて、前述の公知のCo Cr合金膜よりなる垂直磁気
記録媒体を下記条件で作成して比較した。なお、本例で
は基板40は停止状態とした。
Example 1 A perpendicular magnetic recording medium made of the above-mentioned known CoCr alloy film was prepared and compared under the following conditions using the facing target-type Sino (Ivy) apparatus shown in FIG. 1. In this example, the substrate 40 was in a stopped state.

低融点金属を含むCo Cr合金膜は、低融点金属とし
てInを用い、ターゲットTI上Kinの小片を面積比
が所定の含有率になるよって配置して同条件で作成した
A CoCr alloy film containing a low melting point metal was created under the same conditions using In as the low melting point metal and arranging small pieces of Kin on the target TI so that the area ratio became a predetermined content rate.

A 装置条件 a ターゲットTI + T2材: Co 83 wt
%、 Cr17wt%の合金ターゲット b 基板40°カグトン(デュポン社製)フィルム 7
5μm CターゲットTI + T2間隔: 7 s rrL/
md スパッタ表面の磁界:100〜200ガウス e ターゲットTI r T2の形状:110mtφの
円形 f 基板40とターゲソ) T、 、 T2端部の距離
:30 m/m B 操作手順 以下の手順で膜形成を行なった。
A Equipment conditions a Target TI + T2 material: Co 83 wt
%, Cr17wt% alloy target b Substrate 40° Kagton (manufactured by DuPont) film 7
5μm C target TI + T2 interval: 7s rrL/
md Magnetic field on the sputtering surface: 100 to 200 Gauss e Target TI r Shape of T2: 110 mtφ circular f Distance between substrate 40 and target section T, , T2 end: 30 m/m B Operating procedure Film formation is performed using the following steps. I did it.

a 基板を設置後、真空槽10内を到達真空度がI X
 10  Torr以下寸で排気する。
a After installing the substrate, the degree of vacuum reached in the vacuum chamber 10 is I
Exhaust at a pressure of 10 Torr or less.

b アルゴン(Ar)ガスを所定の圧力まで導入し、3
〜5分間のプレスバンクを行ない。
b Introduce argon (Ar) gas to a predetermined pressure, and
~ Do a 5 minute press bank.

シャッタを開き、基板に膜形成を行なった。The shutter was opened and a film was formed on the substrate.

なお、スパッタ時のArガス圧は4×10Tcrrとし
だ。
Note that the Ar gas pressure during sputtering was 4×10 Tcrr.

Cスパッタ時投入電力Fi1 kwで行ない、膜厚が約
1μmの薄膜を形成した。
C sputtering was performed at an input power of Fi1 kW to form a thin film with a thickness of about 1 μm.

C実施結果(サンプル特性) 第1表に得られたCo Cr合合金膜木本発明Inを含
有するCo Cr In合金膜の組成及び磁気特性を示
す。
C Results (Sample Properties) Table 1 shows the composition and magnetic properties of the CoCrIn alloy film containing In of the present invention.

第  1  表 D 評価結果 1)クロックメーターの接触部材がポリエチレンテレフ
タレートフィルムの場合 比較例のI−3では、繰り返し2×103回で0.5n
φのCo Cr層欠落部が発生し、繰り返し数を増加す
るにつれてCo Cr層の欠落部の拡大が生じた。これ
に対しI−1では4 X 10’回の繰り返し回数でも
Co Cr層の欠落部は発生しなかった。
Table 1 D Evaluation results 1) When the contact member of the crockmeter is a polyethylene terephthalate film In the comparative example I-3, 0.5n was obtained by repeating 2 x 103 times.
A missing portion of the Co Cr layer of φ was generated, and as the number of repetitions was increased, the missing portion of the Co Cr layer expanded. On the other hand, in I-1, no missing portions of the CoCr layer occurred even after repeating 4×10' times.

I−2でもI−1と同様であった。I-2 was similar to I-1.

2)クロックメーターの接触部材がパーマロイの場合 I−3では繰り返し600回でCo Cr層欠落部が発
生した。I−2では5ooo回の繰少返しでCo Cr
 In層の欠落部が生じた。
2) When the contact member of the crockmeter is made of permalloy In I-3, a Co Cr layer missing portion occurred after 600 repetitions. In I-2, Co Cr is repeated 5ooo times.
A missing portion of the In layer occurred.

すなわち、 Inを含有するCo Cr合金薄膜は、そ
の接触部材がPETフィルムのような有機物でも、パー
マロイのような金属薄膜であっても、CoCr合金薄膜
と比較して耐摩耗性が著しく向上していることは明らか
である。
In other words, a CoCr alloy thin film containing In has significantly improved wear resistance compared to a CoCr alloy thin film, regardless of whether the contact member is an organic material such as a PET film or a metal thin film such as permalloy. It is clear that there are.

そして、この耐久性向上の理由は金属摩耗の性質から以
下のように説明されよう。
The reason for this improved durability can be explained as follows from the nature of metal wear.

すなわち、接触部材とCo Cr 合金又はCo Cr
 In合金との間ですべり合う時には。
That is, the contact member and Co Cr alloy or Co Cr
When sliding between In alloys.

局部的に摩擦熱が発生する。Co Cr合金は融点15
00℃以上と高いだめ、融点300℃以下のPETフィ
ルムとすべり合う場合には、PETフィルム表面が軟化
するだけでなく 、 Co Cr合金表面に一部累積し
、PET同士のすベジも発生する。この場合、カプトン
フィルム面とCo Cr層の結合力の方が。
Frictional heat is generated locally. CoCr alloy has a melting point of 15
If it slides against a PET film with a melting point of 300°C or lower, not only will the surface of the PET film soften, but some of it will accumulate on the surface of the CoCr alloy, causing smudges between the PET films. In this case, the bonding force between the Kapton film surface and the CoCr layer is stronger.

PETとP4.Tの結合力より弱くなシ、せん断力はカ
ブトンフィルムとCo Cr層に集中するため、Co 
Cr層の欠落部が生ずる。
PET and P4. Co
A missing portion of the Cr layer occurs.

ところがInを含むCo Cr合金では、すべり時の発
熱でinが軟化し1時には表面で塑性流動を生ずるため
、微量なInが含まれているだけでも、常にせん断力は
すベシ面にのみ生じている。このだめ、Co Cr I
n合金の摩耗が発生しにくくなっていると思われる。
However, in a CoCr alloy containing In, the heat generated during sliding softens the In and causes plastic flow at the surface, so even if a small amount of In is included, shear force is always generated only on the bottom surface. There is. This is useless, Co Cr I
It seems that wear of the n-alloy is less likely to occur.

3)電磁変換テスト サンプルI−1,2,3の磁気特性を有するCo Cr
合金及びCo Cr In合金について電磁変換特性を
調査した。
3) CoCr with magnetic properties of electromagnetic conversion test samples I-1, 2, and 3
The electromagnetic characteristics of the alloy and the CoCrIn alloy were investigated.

単磁極型垂直磁気ヘッドで記録、リングヘッドで再生し
、記録方式NRZI 、全信号(矩形波書き込み)で記
鈴密度特性を調べた。
Recording was performed using a single-pole perpendicular magnetic head and reproduction was performed using a ring head, and the recording density characteristics were investigated using the NRZI recording method and all signals (square wave writing).

10 KFRPI (iインチ当91万回の磁束反転)
以下の場合には、垂直保磁力に比例して出力が変わった
が、50KFR1■以上の記録・再生領域ではサンプル
I −1,2,3ともにほぼ一様な結果であった。すな
わち、サンプルI−1,2,3ともに高密度磁気記録に
適した媒体であった。従って、Inの添加は第1表で磁
気特性を低下させるように見受けられるが、含有率が0
.5〜20 atXの範囲では実用上問題ないことがわ
かる。
10 KFRPI (910,000 magnetic flux reversals per i inch)
In the following cases, the output changed in proportion to the perpendicular coercive force, but in the recording/reproducing region of 50KFR1 or more, the results were almost uniform for samples I-1, I-2, and I-3. That is, samples I-1, I-2, and I-3 were all suitable media for high-density magnetic recording. Therefore, although the addition of In appears to reduce the magnetic properties in Table 1, the addition of In
.. It can be seen that there is no practical problem in the range of 5 to 20 atX.

実施例2 実施例1と異な9、基板保持手段41を動作させて矢印
方向に基板40を移送しつつ連続的に以下の条件により
Co Cr合金膜よりなる垂直磁化膜を磁気記録層とし
、その上にCo Cr In合金よりなる保護潤滑層を
設けた垂直磁気記録媒体を作製し、評価した。
Example 2 Different from Example 1, a perpendicularly magnetized film made of a CoCr alloy film was used as a magnetic recording layer under the following conditions while operating the substrate holding means 41 to transfer the substrate 40 in the direction of the arrow. A perpendicular magnetic recording medium having a protective lubricant layer made of a CoCrIn alloy provided thereon was fabricated and evaluated.

A 装置条件 a ターゲットTI * T2材: 磁気記録層作成時−”I + T2共Co80wt%、
Cr20wt%の合金ターゲット保護潤滑層作成時−T
、 、 T2共Co82vrt%、Cr18wt%の合
金ターゲットで、T1上にInの小片を配置 b 基板40 : 50μm厚のPETフィルムCター
ゲットTI r T2の間隔:x6om/md スパッ
タ表面の磁界:100〜150ガウス e ターゲットTI、T2の形状: 180 m/mW
 Xtaom/mL  の矩形 f 基板とターゲラF TI + T2端部の距離=3
0m/m B 操作手順 以下の手順で膜形成を行なった。
A Apparatus conditions a Target TI * T2 material: When creating the magnetic recording layer - "I + T2 both Co 80 wt%,
When creating a protective lubricant layer for an alloy target with 20 wt% Cr-T
, , T2 is an alloy target of Co82vrt% and Cr18wt%, and a small piece of In is placed on T1b Substrate 40: 50 μm thick PET film C target TI r Spacing between T2: x6 om/md Magnetic field on sputtering surface: 100 to 150 Gauss e Target TI, T2 shape: 180 m/mW
Rectangle f of Xtaom/mL Distance between substrate and Targetera F TI + T2 end = 3
0 m/m B Operation procedure Film formation was performed according to the following procedure.

a 基板を設置後、真空槽10内を到達真空度がlX1
0Torr以下まで排気する。
a After installing the substrate, the degree of vacuum reached in the vacuum chamber 10 is lX1
Evacuate to 0 Torr or less.

b アルゴン(Ar)ガスを所定の圧力まで導入し、基
板をターゲットT2側からT、側に移送しつつスパッタ
する。Arガス圧は4 X 10−3Torrで行なっ
た。
b Argon (Ar) gas is introduced to a predetermined pressure, and the substrate is sputtered while being transferred from the target T2 side to the T, side. The Ar gas pressure was 4×10 −3 Torr.

Cスパッタ時投入電力はlkwで行左った。The power input during C sputtering was lkw.

d 磁気記録層のCo Cr合金膜上に形成する保護潤
滑層のCo Cr In合金膜はCo Cr合金膜形成
後一旦真空槽10の真空を破りターゲラF TI + 
T2を交換したのち上述の操fr手順(a、 b、 c
 )で行なった。
d) After the CoCr alloy film is formed, the CoCrIn alloy film as the protective lubricating layer is formed on the CoCr alloy film of the magnetic recording layer.
After replacing T2, perform the above operation fr procedure (a, b, c
).

実施例 第2表に得られだCo Cr合金膜の磁気フ己録層のみ
の垂直磁気記録媒体とCo Cr In合金膜の保護潤
滑層を設けたものの膜厚と磁気特性を示す。
Example Table 2 shows the film thickness and magnetic properties of the perpendicular magnetic recording medium having only a magnetic recording layer made of a CoCr alloy film and the obtained perpendicular magnetic recording medium having a protective lubricating layer made of a CoCrIn alloy film.

なお、(:o Cr InのIn T7)膜厚方向の組
成分布を第4図に示す。同図において縦軸はIn平均濃
度19 at%を100CXとして規準化したIn濃度
を、横軸にはCo Cr In膜厚0.13 μm を
100%として規準化した磁気記録層表面からの厚みδ
を示す。
Incidentally, the composition distribution in the film thickness direction (In T7 of:o Cr In) is shown in FIG. In the figure, the vertical axis represents the In concentration normalized to 100CX with an average In concentration of 19 at%, and the horizontal axis represents the thickness δ from the surface of the magnetic recording layer, normalized to the CoCrIn film thickness of 0.13 μm as 100%.
shows.

D 評価結果 a 摩耗特性 第2図に示す方法で、サンプル■−1゜If−2につい
て摩擦係数μを評価した結果を第3表に示す。
D. Evaluation Results a Wear Characteristics Table 3 shows the results of evaluating the friction coefficient μ of sample ■-1° If-2 using the method shown in FIG.

第  3  表 なお、]I−1は200回以上で摩擦係数が大きくなり
すぎたのでテストを中止した。
Table 3 Note that for I-1, the friction coefficient became too large after 200 cycles, so the test was discontinued.

本発明になるサンプルIT−2は、従来技術If−IK
比較して摩擦係数μの増大の度合は少なく、耐久性は5
〜10倍程改程度れる。
Sample IT-2 according to the present invention is based on the prior art If-IK
In comparison, the degree of increase in the coefficient of friction μ is small, and the durability is 5.
It can be improved by ~10 times.

b 電磁変換特性 サンプルll−1,Tl−2について、直径5αの円板
1(切り抜き、三協精機製フロッピィドライバ(FMC
−100)を改造したテスト装置で電磁変換特性を調べ
た。その結果を第4表に示す。表の数値は、スタート時
の出力のエンベロツブの値を100%として、その出力
の割合を表わしだもので、繰り返し数に対応させて評価
した。
b For electromagnetic conversion characteristic samples ll-1 and Tl-2, disk 1 with a diameter of 5α (cut out, Sankyo Seiki floppy driver (FMC
-100), the electromagnetic conversion characteristics were investigated using a modified test device. The results are shown in Table 4. The numerical values in the table represent the percentage of the output, with the envelope value of the output at the start being taken as 100%, and were evaluated in correspondence to the number of repetitions.

第4表に示すよって、サンプルh■−tすなわち従来の
Co Cr合金の磁気記録層のみのものでは5万バス程
度から再生出力の低下が増し、50万バスでは60%に
なるのに対し、サンプル1bTI−2すなわちCo C
r In合金の保護潤滑層を設けた本発明の場合には6
0%に低下するのは150万パスと従来技術と比較して
3倍径耐久性が改善されたといえる。なお、ll−1は
5×10 ハスで出力低下率が大きいのでそれ以上の実
験を中止した。
As shown in Table 4, in sample h-t, that is, one with only a conventional CoCr alloy magnetic recording layer, the reduction in reproduction output increases from about 50,000 busses, and decreases to 60% at 500,000 busses, whereas Sample 1bTI-2 i.e. CoC
r In the case of the present invention with a protective lubricating layer of In alloy, 6
It took 1.5 million passes for it to drop to 0%, which can be said to be an improvement in 3x diameter durability compared to the conventional technology. Note that ll-1 had a large output reduction rate of 5×10 5 ha, so further experiments were discontinued.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の実施のだめの対向ターゲット式スパ
ッタ装置の説明図、第2図は耐久性評価方法の説明図、
第3図は摩擦特性測定法の、説明図、第4図は実施例2
のサンプルNaff−1の保護潤滑層の膜厚方向のIn
濃度の分布図である。 10:真空槽、    20:排気系。 30:ガス導入系、  40:基 板。 50・電力供給手段+  T1 + T2 ’ターゲッ
ト。 201ニスライドグラス。 204:接触部材、   301°固定ピン特許出願人
 帝人株式会社 代理人 弁理士  前  1) 0 −′τ〜゛゛゛1
、く、i’、、、、 l i−’:、、j−一、+ 才3図 一濃度(リ オ+図
FIG. 1 is an explanatory diagram of a facing target type sputtering apparatus in which the present invention is not implemented, and FIG. 2 is an explanatory diagram of a durability evaluation method.
Figure 3 is an explanatory diagram of the friction characteristics measurement method, Figure 4 is Example 2
In of the protective lubricant layer of sample Naff-1 in the film thickness direction
It is a distribution map of concentration. 10: Vacuum chamber, 20: Exhaust system. 30: Gas introduction system, 40: Substrate. 50・Power supply means + T1 + T2' target. 201 Niss Ride Glass. 204: Contact member, 301° fixing pin Patent applicant Teijin Ltd. agent Patent attorney Mae 1) 0 −′τ〜゛゛゛1
,ku,i',,,,l i-':,,j-1,+ 3 figure 1 concentration (Rio+ figure

Claims (1)

【特許請求の範囲】 1、非磁性の基板上にCoを主成分とした磁性薄膜から
なる磁気記録層を有する磁気記録媒体において、前記磁
気記録層上にInを含みC。 を主成分とした合金薄膜からなる保護潤滑層を形成した
ことを特徴とする磁気記録媒体。 2、前記磁気記録層の磁性薄膜がCr 、 Co 、 
W、 V。 Re、Ta、Niの少なくとも−fIIi類とCoとの
合金からなシ膜面に垂直方向に磁化容易軸を有する垂直
磁化膜である特許請求の範囲第1項記載の磁気記録媒体
。 3、前記保護潤滑層の合金薄膜が、前記磁気記録層の磁
性薄膜と同じ組成の合金にInを添加した合金からなる
特許請求の範囲第1項若しくは第2項記載の磁気記録媒
体。 4、前記保護潤滑層の膜面に垂直方向のIn含有率が、
表面側より磁気記録層側で減少している特許請求の範囲
第1項、第2項若しくは第3項記載の磁気記録媒体。 5、非磁性の基板上K Coを主成分とした磁性薄膜よ
りなる磁気記録層と該磁気記録層上に形成されたInを
含みCoを主成分とした合金薄膜からなる保護潤滑層を
有する磁気記録媒体を製造するに際し、前記保護潤滑層
を対向ターゲット式スパッタ法により形成することを特
徴上する磁気記録媒体の製造法。 6、基板移送方向の下流側のターゲットのみがInを含
む対向ターゲット式スパッタ法にょシ、基板を移送しつ
つ前記保護潤滑層を形成する特許請求の範囲第5項記載
の磁気記録媒体の製造法。
[Claims] 1. A magnetic recording medium having a magnetic recording layer made of a magnetic thin film mainly composed of Co on a non-magnetic substrate, wherein the magnetic recording layer contains In and C. A magnetic recording medium characterized in that a protective lubricant layer is formed from an alloy thin film mainly composed of. 2. The magnetic thin film of the magnetic recording layer is made of Cr, Co,
W, V. 2. The magnetic recording medium according to claim 1, which is a perpendicularly magnetized film having an axis of easy magnetization perpendicular to the film surface, which is made of an alloy of Co and at least -fIIi of Re, Ta, and Ni. 3. The magnetic recording medium according to claim 1 or 2, wherein the alloy thin film of the protective lubricating layer is made of an alloy with In added to an alloy having the same composition as the magnetic thin film of the magnetic recording layer. 4. The In content in the direction perpendicular to the film surface of the protective lubricant layer is
The magnetic recording medium according to claim 1, 2, or 3, wherein the magnetic recording layer is smaller on the magnetic recording layer side than on the surface side. 5. Magnetic device having a magnetic recording layer made of a magnetic thin film mainly composed of K Co on a non-magnetic substrate, and a protective lubricating layer formed on the magnetic recording layer made of an alloy thin film containing In and mainly composed of Co. A method for manufacturing a magnetic recording medium, characterized in that, in manufacturing the recording medium, the protective lubricant layer is formed by a facing target sputtering method. 6. A method for manufacturing a magnetic recording medium according to claim 5, in which the protective lubricant layer is formed while the substrate is being transferred, using a facing target sputtering method in which only the downstream target in the substrate transfer direction contains In. .
JP58063723A 1983-04-13 1983-04-13 Magnetic recording medium and its production Granted JPS59191136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58063723A JPS59191136A (en) 1983-04-13 1983-04-13 Magnetic recording medium and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58063723A JPS59191136A (en) 1983-04-13 1983-04-13 Magnetic recording medium and its production

Publications (2)

Publication Number Publication Date
JPS59191136A true JPS59191136A (en) 1984-10-30
JPH0320813B2 JPH0320813B2 (en) 1991-03-20

Family

ID=13237602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58063723A Granted JPS59191136A (en) 1983-04-13 1983-04-13 Magnetic recording medium and its production

Country Status (1)

Country Link
JP (1) JPS59191136A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253638A (en) * 1985-05-02 1986-11-11 Teijin Ltd Production of vertical magnetic recording medium
JPS61253639A (en) * 1985-05-02 1986-11-11 Teijin Ltd Production of magnetic recording medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133604A (en) * 1974-09-17 1976-03-22 Fujitsu Ltd Jikikirokubaitai no hogomaku
JPS5276005A (en) * 1975-12-22 1977-06-25 Fujitsu Ltd Base plate of magnetic disk
JPS5340505A (en) * 1976-09-25 1978-04-13 Matsushita Electric Ind Co Ltd Magnetic recordinf medium
JPS54141107A (en) * 1978-04-25 1979-11-02 Matsushita Electric Ind Co Ltd Magnetic recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133604A (en) * 1974-09-17 1976-03-22 Fujitsu Ltd Jikikirokubaitai no hogomaku
JPS5276005A (en) * 1975-12-22 1977-06-25 Fujitsu Ltd Base plate of magnetic disk
JPS5340505A (en) * 1976-09-25 1978-04-13 Matsushita Electric Ind Co Ltd Magnetic recordinf medium
JPS54141107A (en) * 1978-04-25 1979-11-02 Matsushita Electric Ind Co Ltd Magnetic recording medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253638A (en) * 1985-05-02 1986-11-11 Teijin Ltd Production of vertical magnetic recording medium
JPS61253639A (en) * 1985-05-02 1986-11-11 Teijin Ltd Production of magnetic recording medium

Also Published As

Publication number Publication date
JPH0320813B2 (en) 1991-03-20

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