JPS59116927A - Magnetic recording medium and its production - Google Patents

Magnetic recording medium and its production

Info

Publication number
JPS59116927A
JPS59116927A JP57223900A JP22390082A JPS59116927A JP S59116927 A JPS59116927 A JP S59116927A JP 57223900 A JP57223900 A JP 57223900A JP 22390082 A JP22390082 A JP 22390082A JP S59116927 A JPS59116927 A JP S59116927A
Authority
JP
Japan
Prior art keywords
magnetic recording
metal
thin film
recording medium
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57223900A
Other languages
Japanese (ja)
Inventor
Sadao Kadokura
貞夫 門倉
Kiyoshi Takekata
武方 清
Kazuhiko Honjo
和彦 本庄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP57223900A priority Critical patent/JPS59116927A/en
Publication of JPS59116927A publication Critical patent/JPS59116927A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/64Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/656Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co

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  • Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To prevent the wear and dropout of the head itself and the thin metallic film itself and to enable a considerable improvement in the durability thereof by incorporating a low-melting metal in a thin metallic film consisting of a Co contg. alloy as a magnetic recording layer. CONSTITUTION:Any low-melting metal which is plastically made fluidify by locally generated friction heat is acceptable. The temp. of the friction point by such friction heat is known to be about 1,000 deg.C and the metal applicable in practicability includes Ga, In, Pb, Sn, Hg, Zn, Wood's metal, etc. If the content of the low-melting metal to be incorporated in a thin metallic film is too low, the effect thereof is not obtainable and if the content is too high, the magnetic characteristic necessary as a recording layer cannot be maintained and therefore said content needs be selected in a suitable range. A magnetic recording medium that can be satisfied in a wide range of 0.5-20at% is obtd. with In. The low-melting point is preferably higher in the content thereof on the outside surface side of the thin metallic film that contacts with a head than on the inside surface inside.

Description

【発明の詳細な説明】 本発明は高密度記録ができるCo (コバルト)合金の
金属薄膜からなる磁気記録媒体及びその製造法に関し、
更に詳しくは近年実用化研究の盛んな垂直磁気配録に好
適な磁気記録媒体に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic recording medium made of a Co (cobalt) alloy metal thin film capable of high-density recording, and a method for manufacturing the same.
More specifically, the present invention relates to a magnetic recording medium suitable for perpendicular magnetic recording, which has been actively researched for practical use in recent years.

近年、高密度記録に対する要請から、真空蒸着、スパッ
タ等のPVD法、あるいはメッキ法により形成された強
磁性金属薄膜を記録層とした磁気記録媒体が注目され、
多くの提案がある。
In recent years, due to the demand for high-density recording, magnetic recording media whose recording layer is a ferromagnetic metal thin film formed by PVD methods such as vacuum evaporation and sputtering, or plating methods have attracted attention.
There are many suggestions.

なかでも、上述のco系合金の金属薄膜は高密度記録に
適した磁気特性を有することがら注目され、一層の高密
度化が期待される垂直磁気記録に用いられる記録層とし
ては、膜面に対して垂直方向の磁気異方性を有するCo
−0r(クロム)合金、 Co−0r−Ta (タンタ
ル)合金、  co−Or−Mo(モリブデン)合金、
Co−0r−W(夕/ゲステン)合金、 Co−0r 
−Re (レニウム)合金、Co−V(バナジウム)合
金などOCOCo系合金属薄膜が提案されており、又、
現方式の面内記録の記録層としてはCo−Ni にメタ
ル)、0o−Pt(白金)、Co−P(リン)などのC
o系合金からなる金属薄膜が提案されている。
Among these, the metal thin film of the above-mentioned co-based alloy is attracting attention because it has magnetic properties suitable for high-density recording, and as a recording layer used for perpendicular magnetic recording, which is expected to achieve even higher densities. Co has magnetic anisotropy perpendicular to
-0r (chromium) alloy, Co-0r-Ta (tantalum) alloy, co-Or-Mo (molybdenum) alloy,
Co-0r-W (yu/gesten) alloy, Co-0r
OCOCo alloy thin films such as -Re (rhenium) alloy and Co-V (vanadium) alloy have been proposed;
The recording layer for the current method of longitudinal recording is Co-Ni (metal), Oo-Pt (platinum), Co-P (phosphorous), etc.
Metal thin films made of o-based alloys have been proposed.

しかしながら、上述のCo系合金膜には、実用面から次
の問題がある。すなわち、安定且つ87N比の良い記録
、再生特性を得るためには、記録、再生時に磁気ヘッド
を記録層に接触させる方式が最適であるが、この接触方
式によるとCo系合金膜は摩耗等が大きく耐久性に乏し
い問題がある。特に基板に高分子フィルムを用いるもの
ではこの問題は重要である。
However, the above-mentioned Co-based alloy film has the following problems from a practical standpoint. In other words, in order to obtain stable recording and reproduction characteristics with a good 87N ratio, it is optimal to bring the magnetic head into contact with the recording layer during recording and reproduction, but with this contact method, the Co-based alloy film suffers from abrasion, etc. There is a major problem with poor durability. This problem is particularly important in those that use a polymer film for the substrate.

本発明は、かかる現状に鑑みなされたもので耐久性に優
れたCo系合金膜を記録層とした磁気記録媒体及びその
製造法を提供するものである。
The present invention was made in view of the current situation, and provides a magnetic recording medium whose recording layer is a highly durable Co-based alloy film, and a method for manufacturing the same.

すなわち、本発明は磁気記録層としてCo系合金からな
る金属薄膜を有する磁気記録媒体において、前記金属薄
膜が低融点金属を含むことを特徴とする磁気記録媒体を
第1発明とし、第1発明の磁気記録媒体の金属薄膜を対
向ターゲット式スパッタ法により形成することを特徴と
する磁気記録媒体の製造法を第2発明とするものである
That is, the present invention provides a magnetic recording medium having a metal thin film made of a Co-based alloy as a magnetic recording layer, in which the metal thin film contains a low melting point metal. A second invention provides a method for manufacturing a magnetic recording medium, characterized in that a metal thin film of the magnetic recording medium is formed by a facing target sputtering method.

ところで、上述の第1発明は記録・再生時の磁気ヘッド
とCo系合金の金属薄膜との接触を固体同志の摩擦とみ
なせることに着目しなされたものである。
By the way, the above-mentioned first invention focuses on the fact that the contact between the magnetic head and the Co-based alloy metal thin film during recording/reproducing can be regarded as friction between solid objects.

Co Or金合金どCo系の強磁性金属は金属間化合物
を形成し、極めて硬度が高く、かつ融点が高い。又、ヘ
ッド材質はセミツクスあるいはパーマロイ、センダスト
等で形成されるので、強磁性金属と同様に硬度が高く、
かつ高融点である。従って、両者が摩擦を繰り返す際、
特に両者の接触面積が大きい場合には互いに研磨し合う
ため、例えば記録媒体の金属薄膜と基板との接着が弱い
場合には金属薄膜が剥離する。さらには媒体及びヘッド
ともに傷が生じ、傷を生じさせた金属あるいはセラミッ
クの微粒子が研磨剤として働く。これらの原因から金属
薄膜からなる磁気記録媒体の耐久性が乏しいと思われる
Co-based ferromagnetic metals such as Co-Or gold alloys form intermetallic compounds, have extremely high hardness, and have a high melting point. In addition, since the head material is made of semi-chemicals, permalloy, sendust, etc., it has high hardness similar to ferromagnetic metals.
It also has a high melting point. Therefore, when there is repeated friction between the two,
Particularly when the contact area between the two is large, they abrade each other, so that, for example, if the adhesion between the metal thin film of the recording medium and the substrate is weak, the metal thin film will peel off. Furthermore, both the medium and the head are scratched, and the metal or ceramic fine particles that caused the scratches act as an abrasive. Due to these reasons, it is thought that magnetic recording media made of thin metal films have poor durability.

これに対して、上記金属薄膜に融点の低い低融点金属を
含有させた場合は、低融点金属の作用によりn下のよう
に耐久性が大巾に向上する。
On the other hand, when the metal thin film contains a low melting point metal, the durability is greatly improved as shown in the example below due to the effect of the low melting point metal.

すなわち、金属薄膜とヘッドとが摩擦し合う場合には、
その接触部では摩擦熱が局部的に発生し、この摩擦熱に
よシ低融点金属が軟化し、ヘッドと金属表面との間で塑
性流動が生じ、摩耗欠落を発生させるせん断力は塑性流
動化したすペシ面に生ずる。従って、ヘッド自体及び金
属薄膜自体の摩耗、欠落は効果的に防止され、それらの
耐久性は大巾に上昇する。
In other words, when the metal thin film and the head rub against each other,
Frictional heat is generated locally at the contact area, and this frictional heat softens the low-melting point metal, causing plastic flow between the head and the metal surface, and the shear force that causes wear and tear to become plastic flow. Occurs on the side of the face. Therefore, abrasion and chipping of the head itself and the metal thin film itself are effectively prevented, and their durability is greatly increased.

以上から、本発明での低融点金属とは、局部的に発生す
る摩擦熱で塑性流動化するものであれば良い。かかる摩
擦熱による摩擦点の温度は1000℃前後と云われてお
り、よって具体的に融点が1000℃以下の金属が適用
できる。かかる金属としてはGa(ガリウム)、In(
インジウム)、Pb(鉛)、8n(錫)、Hg(水銀)
、Zn(亜鉛)、ウッドメタル等がある。
From the above, the low melting point metal in the present invention may be any metal that can be plastically fluidized by locally generated frictional heat. The temperature at the friction point due to such frictional heat is said to be around 1000°C, and therefore metals having a melting point of 1000°C or less can be specifically used. Such metals include Ga (gallium) and In (
indium), Pb (lead), 8n (tin), Hg (mercury)
, Zn (zinc), wood metal, etc.

ところで、金属薄膜に含有される低融点金属の含有率は
あまシ低いとその効果が発揮されず、また高過ぎると記
録層として必要な磁気特性が維持できないので、適当な
範囲に選定する必要がある。IP、の場合は0.5〜2
0at%という広範囲で満足できる磁気記録媒体が得ら
れた。また、前述の点から低融点金属は、その含有率が
金属薄膜のヘッドと接触する外面側の方で内面側より高
くなっているのが好ましい。
By the way, if the content of the low melting point metal contained in the metal thin film is too low, the effect will not be exhibited, and if it is too high, the magnetic properties necessary for the recording layer cannot be maintained, so it is necessary to select it within an appropriate range. be. IP, 0.5-2
A magnetic recording medium that was satisfactory over a wide range of 0 at% was obtained. Further, from the above point, it is preferable that the content of the low melting point metal is higher on the outer surface of the thin metal film that contacts the head than on the inner surface.

なお、本発明は、非磁性の基板上KPVD法。Note that the present invention is a KPVD method on a nonmagnetic substrate.

メッキ法等によシ記録層としてCo系合金の金属薄膜を
形成した金属薄膜型磁気記録媒体を対象とする。ここで
Co系合金とはcoを主成分とした強磁性合金の総称で
ある。金属薄膜は多層膜からなるものでも良く、との場
合はヘッドと接触する最外層の金属薄膜に低融点金属を
含ませれば良い。
The object is a metal thin film type magnetic recording medium in which a metal thin film of a Co-based alloy is formed as a recording layer by a plating method or the like. Here, the Co-based alloy is a general term for ferromagnetic alloys containing cobalt as a main component. The metal thin film may be a multilayer film, and in this case, a low melting point metal may be included in the outermost metal thin film that contacts the head.

゛また、本発明は、接触方式の記録・再生が必要なポリ
エステルフィルム等の高分子フィルムを基板とした磁気
記録媒体には特に有効である。
Furthermore, the present invention is particularly effective for magnetic recording media using a polymer film such as a polyester film as a substrate, which requires contact recording/reproduction.

また、潤滑剤等の使用では潤滑が困難と云われるOrを
多量に含有する特開昭54−51804号公報、特開@
 s 7−10 o 627号公報等の000r合金膜
からなる垂直磁気記録録用の磁気記録媒体には本発明は
特に有効である。
In addition, JP-A-54-51804 and JP-A-54-51804 contain a large amount of Or, which is said to be difficult to lubricate with lubricants.
The present invention is particularly effective for magnetic recording media for perpendicular magnetic recording made of 000r alloy films such as those disclosed in S7-10O627.

なお、この場合Co Or合金膜は膜面に垂直方向の磁
化容易な磁気異方性を要求されるが、低融点金属の含有
率を適当な範囲に選定すれば、問題なくこの要求は満足
される。
In this case, the CoOr alloy film is required to have magnetic anisotropy that facilitates magnetization in the direction perpendicular to the film surface, but this requirement can be met without any problem if the content of the low melting point metal is selected within an appropriate range. Ru.

以上の第1発明の磁気記録媒体は、低融点金属が所定の
含有率で含まれた合金を蒸発物質、ターゲットとした真
空蒸着、スパッタ等のPVD法等により製造できる。
The above-described magnetic recording medium of the first invention can be manufactured by a PVD method such as vacuum evaporation or sputtering using an alloy containing a predetermined content of a low melting point metal as an evaporation substance and a target.

特に、特開昭s 7−158380号公報等に記載され
た対向配置した一対のターゲットの側方に基板を配置し
て膜形成する対向ターゲット式スパッタ法により製造す
る第2発明は、安価なポリエステルフィルム等の基板上
に高速で連続膜形成できる上、ターゲットの各々の低融
点金属の含有率を適当に選定するのみで、膜厚方向の低
融点金属の濃度分布が制御できるので、第1発明の製造
法として優れている。
In particular, the second invention, which is manufactured by the facing target sputtering method in which a film is formed by placing a substrate on the sides of a pair of targets placed opposite each other, described in JP-A-S7-158380, etc., uses inexpensive polyester. In addition to being able to form a continuous film on a substrate such as a film at high speed, the concentration distribution of the low melting point metal in the film thickness direction can be controlled simply by appropriately selecting the content of each low melting point metal in the target. It is an excellent manufacturing method.

以下、上述の本発明の詳細を実施例に基いて説明する。Hereinafter, the details of the above-mentioned present invention will be explained based on examples.

第1図は本発明の実施に用いた対向ターゲット式スパッ
タ装置の構成図である。
FIG. 1 is a block diagram of a facing target type sputtering apparatus used in carrying out the present invention.

図から明らかな通り、本装置は基板40の保持手段を除
いて前述の特開昭57−158380号公報と同じ構成
となっている。
As is clear from the figure, the present apparatus has the same structure as that of the above-mentioned Japanese Patent Application Laid-open No. 57-158380, except for the means for holding the substrate 40.

すなわち、図において10は真空容器、20は真空容器
10を排気する真空ポンプ等からなる排気系、30は真
空容器10内に所定のガスを導入して真空容器10内の
圧力を10−1〜10〜4Torr程度の所定のガス圧
力に設定するガス圧力に設定するガス導入系である。
That is, in the figure, 10 is a vacuum container, 20 is an evacuation system consisting of a vacuum pump etc. that evacuates the vacuum container 10, and 30 is a predetermined gas introduced into the vacuum container 10 to increase the pressure in the vacuum container 10 by 10-1 to 10-1. This is a gas introduction system that is set to a predetermined gas pressure of about 10 to 4 Torr.

そして、真空容器lO内には、図示の如く真空容器10
の側板11,12に絶縁部材13゜14を介して固着さ
れたターゲットホルダー15.16によシ1対のターゲ
ットT、、T2が、そのスパッタされる面T+s 、 
T2Sを空間を隔てて平行に対面するように配設しであ
る。そして、ターゲット’r、、’r2とそれに対応す
るターゲットホルダー15.16は、水冷パイプ151
゜161を介して冷却水によシタ−ゲラF TI + 
T2、永久磁石152,162が冷却される。磁石15
2.162はターゲットT、、T2を介してN極。
In the vacuum container IO, there is a vacuum container 10 as shown in the figure.
A pair of targets T, , T2 are fixed to the side plates 11, 12 of the target holder 15, 16 through insulating members 13, 14 on their sputtered surfaces T+s,
The T2S are arranged so as to face each other in parallel across a space. The targets 'r, ,'r2 and the corresponding target holders 15 and 16 are connected to the water cooling pipe 151.
Cooling water is supplied through ゜161.
T2, permanent magnets 152, 162 are cooled. magnet 15
2.162 is the N pole via target T,, T2.

S極が対向するように設けてあり、従って磁界はターゲ
ットTI * T2に垂直な方向に、かつターゲット間
のみに形成される。なお、17.18は絶縁部材13.
14及びターゲットホルダー15.16をスパッタリン
グ時のプラズマ粒子から保護するためとターゲット表面
以外の部分の異常放電を防止するためのシールドである
The south poles are arranged to face each other, so that a magnetic field is formed only in the direction perpendicular to the targets TI*T2 and between the targets. Note that 17.18 is the insulating member 13.
14 and target holders 15 and 16 from plasma particles during sputtering and to prevent abnormal discharge in areas other than the target surface.

また、磁性薄膜が形成される基板4oを保持する基板保
持手段41は、真空容器10内のターゲットTl、T2
の側方に設けである。基板保持手段41は、図示省略し
た支持ブラケットにょシ夫々回転自在かつ互いに軸平行
に支持された繰り出しロール41a、支持ロール41b
9巻取ロール41cの3個のロールからなシ、基板4゜
をターゲットT、 、 T2間の空間に対面するように
スパッタ面’r、s、 T2Sに対して略直角方向に保
持するように配置しである。従って基板4oは巻取りロ
ール41cによりスパッタ面’r、s、 ’r2s  
に対して直角方向に移動可能である。
Further, the substrate holding means 41 that holds the substrate 4o on which the magnetic thin film is formed is connected to the targets Tl and T2 in the vacuum container 10.
It is installed on the side of the The substrate holding means 41 includes a feed roll 41a and a support roll 41b, which are rotatably supported by support brackets (not shown) and parallel to each other's axes.
The three rolls of the nine-winding roll 41c hold the substrate 4° in a direction substantially perpendicular to the sputtering surfaces 'r, s, and T2S so as to face the space between the targets T, , and T2. It is arranged. Therefore, the substrate 4o is sputtered on the sputtering surfaces 'r, s, 'r2s' by the winding roll 41c.
It is movable in a direction perpendicular to .

一方、スパッタ電力を供給する直流電源からなる電力供
給手段50はグラス側をアースに、マイナス側をターゲ
ットT、、T2に夫々接続する。
On the other hand, a power supply means 50 consisting of a DC power source for supplying sputtering power has its glass side connected to the ground, and its negative side connected to the targets T, T2, respectively.

従って電力供給手段50からのスパッタ電力は、アース
をアノードとし、ターゲットTI + T2をカソード
として、アノード、カソード間に供給される。
Therefore, the sputtering power from the power supply means 50 is supplied between the anode and the cathode, with the ground as the anode and the target TI+T2 as the cathode.

なお、プレスパッタ時基板4oを保護するため、基板4
0とターゲラ) TI + T2との間に出入するシャ
ッター(図示省略)が設けである。
Note that in order to protect the substrate 4o during pre-sputtering,
A shutter (not shown) that goes in and out between TI+T2 and TI+T2 is provided.

以上の通り、前述の特開昭57−”158380号公報
と基本的には同じ構成であるので、公知の通シ高速低温
スパッタが可能となる。すなわち、ターゲットT、、T
2間の空間に、磁界の作用にょシスバッタガスイオン、
スパッタにょシ放出されたγ電子等が束縛され高密度プ
ラズマが形成される。従って、ターゲット’r、、’r
2のスパッタが促進されて前記空間よシ析出量が増大し
、基板40上への堆積速度が増し高速スパッタが出来る
上、基板40がターゲットTI、T2の側方にあるので
低温スパッタも出来る。
As described above, since the configuration is basically the same as that of the above-mentioned Japanese Patent Application Laid-Open No. 57-158380, it is possible to perform the well-known high-speed low-temperature sputtering. That is, targets T, , T
In the space between the two, due to the action of the magnetic field, locust gas ions,
Gamma electrons etc. emitted by sputtering are bound and a high-density plasma is formed. Therefore, the target 'r,,'r
The sputtering of No. 2 is promoted, the amount of deposition in the space increases, the deposition rate on the substrate 40 increases, high-speed sputtering is possible, and since the substrate 40 is on the side of the targets TI and T2, low-temperature sputtering is also possible.

なお、本発明の対向ターゲット式スパッタ法は、前述の
装置に限定されるものでなく、一対の対面させたターゲ
ットの側方に基板を配し、ターゲット間に垂直方向の磁
界を印加してスパッタし、基板上に膜を形成するスパッ
タ法を云う。従って、磁界発生手段も永久磁石でなく、
電磁石を用いても良い。また、磁界もターゲット間の空
間にγ電子等を閉じ込めるものであれば良く、従ってタ
ーゲット全面でなく、ターゲット周囲のみに発生させた
場合も含む。
Note that the facing target sputtering method of the present invention is not limited to the above-mentioned apparatus, and sputtering is performed by placing a substrate on the side of a pair of facing targets and applying a perpendicular magnetic field between the targets. This refers to a sputtering method that forms a film on a substrate. Therefore, the magnetic field generating means is not a permanent magnet,
An electromagnet may also be used. Further, the magnetic field may be one that confines γ electrons and the like in the space between the targets, and therefore includes the case where it is generated not over the entire surface of the target but only around the target.

次に上述の対向ターゲット式スパッタ装置により実施し
た本′発明に←わる垂直磁気記録媒体の実施例を説明す
る。
Next, an embodiment of a perpendicular magnetic recording medium according to the present invention, which is implemented using the above-mentioned facing target type sputtering apparatus, will be described.

なお、得られた合金膜の結晶構造は理学電機製計数X線
回析装置を用いて同定し、垂直配向性は六方最密構造か
つ(002)面ピークのロッキングカーブを前記X線回
析装置で求め、その半値幅△θ50で評価した。
The crystal structure of the obtained alloy film was identified using a counting X-ray diffraction device manufactured by Rigaku Corporation, and the vertical orientation was determined using a hexagonal close-packed structure and the rocking curve of the (002) plane peak using the X-ray diffraction device. It was calculated using the half width Δθ50.

膜厚及び組成については、理学電機製螢光X線装置を用
いて予め較正した曲線から求めた。
The film thickness and composition were determined from a curve calibrated in advance using a fluorescent X-ray device manufactured by Rigaku Denki.

耐久性の評価は、クロックメーター(Crockmet
er ) (アトラスエレクトリックデバイス社(米)
製、モデルCMT−1)を用いて次のように行なった。
Durability is evaluated using a Crockmeter.
er ) (Atlas Electric Devices Co., Ltd. (USA)
The test was carried out as follows using a model CMT-1 (manufactured by Manufacturer Co., Ltd.).

第2図に示すように、スライドグラス201上に両面接
着テープによシ比較するサンプル202.203を並べ
て固定し、接触部材204を図の矢印Aの如く左右に往
復させてサンプル202.203の表面の劣化状況を観
察した。接触部材204の接触面積はl−1その接触圧
力は900f、速度は3cr++/秒、繰り返し頻度は
30回/分の条件下で、接触部材204の下面の接触面
にポリエチレンテレフタレート(PET)フィルム及び
バーマロン薄膜(Ni78%、Fe22%)を夫々接着
して行なった。
As shown in FIG. 2, samples 202 and 203 to be compared are fixed side by side on a slide glass 201 using double-sided adhesive tape, and the contact member 204 is moved back and forth from side to side as shown by arrow A in the figure. The state of surface deterioration was observed. The contact area of the contact member 204 is l-1, the contact pressure is 900 f, the speed is 3 cr++/sec, and the repetition frequency is 30 times/min. A polyethylene terephthalate (PET) film and a Vermalon thin films (Ni 78%, Fe 22%) were adhered to each other.

さらに、実際の摩耗特性を測定するために第3図に示す
如く、5藺φの固定ピン301にサンプルテープ302
を接触させて上下に3.3crn/ secの速度で繰
り返し動かし、摩擦係数μの変化及び傷の発生状況から
耐久性を調べた。
Furthermore, in order to measure the actual wear characteristics, as shown in FIG.
were brought into contact with each other and repeatedly moved up and down at a speed of 3.3 crn/sec, and the durability was examined from the change in friction coefficient μ and the occurrence of scratches.

なお、摩擦係数μは固定ビン301の入側張力T1と出
側張力T2 k測定し、公知の下式により求めた。
The friction coefficient μ was determined by measuring the inlet tension T1 and the outlet tension T2 k of the fixed bottle 301, and using the well-known formula below.

2 μ=7′。不 上式でθは接触角であシ、θ−1800に設定した。2 μ=7′. No In the above equation, θ is the contact angle and was set to θ-1800.

実施例1 前述した第1図の対向ターゲット式スパッタ装置を用い
て、前述の公知のCo Or合金膜よシなる垂直磁気記
録媒体を下記条件で作成して比較した。なお、本例では
基板4oは停止状態とした。
Example 1 Using the above-mentioned facing target type sputtering apparatus shown in FIG. 1, a perpendicular magnetic recording medium made of the above-mentioned known CoOr alloy film was prepared under the following conditions and compared. Note that in this example, the substrate 4o was in a stopped state.

低融点金属を含むCo Or合金膜は、低融点金属とし
てInを用い、ターゲットT1上にInの小片を面積比
が所定の含有率になるように配置して同条件で作成した
A Co Or alloy film containing a low melting point metal was created under the same conditions by using In as the low melting point metal and arranging small pieces of In on the target T1 so that the area ratio became a predetermined content rate.

A 装置条件 a ターゲットTI+T2材:co83・cr17合金
ターゲット b 基板4o:カプトン(デュポン社製)フィルム 7
5μm CターゲットT1.T2間隔: 75 m/、。
A Equipment conditions a Target TI+T2 material: CO83/CR17 alloy target b Substrate 4o: Kapton (manufactured by DuPont) film 7
5 μm C target T1. T2 interval: 75 m/.

d スパッタ表面の磁界:lθ0〜200ガウス e ターゲットTI+T2の形状: 110.φの円形 f 基板40とターゲットT、、T2端部の距離=30
 m/m B 操作手順 以下の手順で膜形成を行なった。
d Magnetic field on sputtering surface: lθ0 to 200 Gauss e Shape of target TI+T2: 110. Circular f of φ Distance between substrate 40 and target T, T2 end = 30
m/m B Operation procedure Film formation was carried out using the following procedure.

a 基板を設置後、真空容器10内を到達真空度がI 
X 1 (1’ Torr以下まで排気する。
a After installing the substrate, the degree of vacuum reached within the vacuum container 10 is I.
X 1 (Exhaust to below 1' Torr.

b アルゴン(Ar)ガスを所定の圧力まで 導入し、
3〜5分間のプレスパツタを行ない、シャッタを開き、
基板に膜形成を行なった。
b Introduce argon (Ar) gas to a specified pressure,
Press the button for 3 to 5 minutes, open the shutter,
A film was formed on the substrate.

なお、スパッタ時のArガス圧は4X10−3Torr
とした。
The Ar gas pressure during sputtering was 4X10-3 Torr.
And so.

Cスパッタ時投入電力は1 kwで行ない、膜厚が約1
μmの薄膜を形成した。
The power input during C sputtering was 1 kW, and the film thickness was approximately 1 kW.
A thin film of μm was formed.

C実施結果(サンプル特性) 第1表に得られたCo Or合金膜、本発明のInを含
有するCo Or In合金膜の組成及び磁気特性を示
す。
C Results (Sample Properties) Table 1 shows the composition and magnetic properties of the Co Or In alloy film obtained and the In-containing Co Or In alloy film of the present invention.

第   1   表 D 評価結果 1)クロックメーターの接触部材がポリエチレンテレフ
タレートフィルムの場合 比較例のI−3では、繰り返し2X103回で0.5u
φの0oOr層欠落部が発生し、繰り返し数を増加する
につれてCo Cr層の欠落部の拡大が生じた。これに
対しI−1では4 X 10’回の繰り返し回数でもC
!oor  層の欠落部は発生しなかった。
Table 1 D Evaluation results 1) When the contact member of the crockmeter is a polyethylene terephthalate film In the comparative example I-3, 0.5 u was obtained by repeating 2x103 times.
A missing portion of the 0oOr layer of φ occurred, and as the number of repetitions increased, the missing portion of the CoCr layer expanded. On the other hand, in I-1, even if the number of repetitions is 4 × 10', C
! No missing portions of the oor layer occurred.

I−2でもI−1と同様でちった。I-2 was the same as I-1.

2)クロックメーターの接触部材がパーマロイの場合 I−3では繰り返し600回でCo Or層欠落部が発
生した。I−2では5000回の繰り返しでCo Or
 In層の欠落部が生じた。
2) When the contact member of the crockmeter is made of permalloy In I-3, a CoOr layer missing portion occurred after 600 repetitions. In I-2, Co Or
A missing portion of the In layer occurred.

すなわち、Inを含有するCoCr合金薄膜は、その接
触部材がPETフィルムのような有機物でも、パーマロ
イのような金属薄膜であっても、0oOr 合金薄膜と
比較して耐摩耗性が著しく向上していることは明らかで
ある。
In other words, a CoCr alloy thin film containing In has significantly improved wear resistance compared to a 0oOr alloy thin film, regardless of whether the contact member is an organic material such as a PET film or a metal thin film such as permalloy. That is clear.

そして、この耐久性向上の理由は前述した金属摩耗の性
質から説明される。すなわち、接触部材とCo Or金
合金はOc+ Or In合金と間ですべり合う時には
、局部的に摩擦熱が発生する。Co Or−合金は融点
1500℃以上と高いため、融点300℃以下のPET
フィルムとすべり合う場合には、PETフィルム表面が
軟化するだけでな(、Co Or合金表面に一部累積し
、PK′1’同士のすべりも発生する。この場合、カプ
トンフィルム面とCo Cr層の結合力の方が、PET
とPETの結合力よシ弱くなシ、せん断力はカプトンフ
ィルムと0oOr層に集中するため、C00r層の欠落
部が生ずる。ところがInを含むCo Or金合金は、
すベシ時の発熱でInが軟化し、時には表面で塑性流動
を生ずるため、微量なInが含まれているだけでも、常
にせん断力はすべり面にのみ生じている。
The reason for this improved durability can be explained from the above-mentioned properties of metal wear. That is, when the contact member and the Co Or gold alloy slide against the Oc + Or In alloy, frictional heat is locally generated. Co Or-alloy has a high melting point of 1500°C or higher, so PET with a melting point of 300°C or lower
When sliding with the film, not only the surface of the PET film softens (but some of it accumulates on the surface of the CoOr alloy, and sliding between PK'1' also occurs.In this case, the surface of the Kapton film and the CoCr layer The bonding strength of PET
Since the bonding force between the film and the PET is weaker, the shear force is concentrated on the Kapton film and the OoOr layer, resulting in a missing portion of the C00r layer. However, CoOr gold alloy containing In,
The heat generated during sliding softens In and sometimes causes plastic flow on the surface, so even if a small amount of In is included, shear force is always generated only on the sliding surface.

このため、Co Cr In合金の摩耗が発生しにくく
なっていると思われる。
For this reason, it is thought that wear of the CoCrIn alloy is less likely to occur.

3)電磁変換テスト サンプルI−1,2,3の磁気特性を有するCo Or
金合金びCo Or In合金について電磁変換特性を
調査した。
3) CoOr with magnetic properties of electromagnetic conversion test samples I-1, 2, and 3
The electromagnetic characteristics of gold alloy and Co Or In alloy were investigated.

単磁極屋垂直磁気ヘッドで記録、リングヘッドで再生し
、記録方式NRZI、全信号(矩形波書き込み)で記録
密度特性を調べた。
Recording was performed with a single-pole vertical magnetic head and reproduction was performed with a ring head, and the recording density characteristics were investigated using the NRZI recording method and all signals (square wave writing).

、  10KFRPI (1インチ当り1万回の磁束反
転)以下の場合には、垂直抗磁力に比例して中力が変わ
ったが、50KF几工以上の記録・再生領域ではサンプ
ルI−1,2,3ともKはy一様な結果であった。すな
わち、サンプルI−1,2,3ともに高密度磁気記録に
適した媒体であった。従って、Inの添加は第1表で磁
気特性を低下させるように見受けられるが、後述の例を
含めて含有率が0.5〜20 at%の範囲では実用上
問題ないことがわかる。
, In the case of 10KFRPI (10,000 magnetic flux reversals per inch) or less, the neutral force changed in proportion to the perpendicular coercive force, but in the recording/reproducing area of 50KF or more, samples I-1, 2, In all three cases, the results of K were uniform. That is, samples I-1, I-2, and I-3 were all suitable media for high-density magnetic recording. Therefore, although the addition of In appears to reduce the magnetic properties in Table 1, it is understood that there is no problem in practical use when the content is in the range of 0.5 to 20 at%, including the examples described below.

実施例2 実施例1と異なり、基板保持手段41を動作させて矢印
方向に基板40を移送しつつ連続的に実施例1と同様に
垂直磁気記録媒体を作製した。
Example 2 Unlike Example 1, a perpendicular magnetic recording medium was fabricated continuously in the same manner as in Example 1 while operating the substrate holding means 41 to transport the substrate 40 in the direction of the arrow.

A 装置条件 a ターゲットT、、T2材: 0o83 0r17合
金ターゲツ) (In添加の場合には、 実施例1と同様にT1s上にIn金属 の小片を配置) b 基板40:カプトン(デュポン社製)フィルム 2
5μm CターゲットT1 + T2間隔: 120 m/md
 ターゲットT、、T2の形状:150.X180藺の
長方形 e 基板40とターゲットT、 、 T2端部の距離。
A Equipment conditions a Target T,, T2 material: 0o83 0r17 alloy target) (In case of In addition, place a small piece of In metal on T1s as in Example 1) b Substrate 40: Kapton (manufactured by DuPont) film 2
5μm C target T1 + T2 spacing: 120 m/md
Shape of target T, T2: 150. Distance between the substrate 40 and the ends of the targets T, , and T2.

3 0  m/m B 操作手順 以下の手順で膜形成を行なった。3 0  m/m B. Operating procedure Film formation was performed using the following procedure.

a 真空容器1o内を到達真空度がI X 10−6T
orr以下まで排気する。
a The degree of vacuum achieved inside the vacuum container 1o is I x 10-6T
Exhaust to below orr.

b  フルーrン(kr)ガスを所定の圧力まで導入し
、基板を走行させながら、基派上に膜形成を行なった。
b Fluorine (KR) gas was introduced to a predetermined pressure, and a film was formed on the substrate while the substrate was running.

なお、スパッタ時のArガス圧は4 X 10−3To
rrとした。
Note that the Ar gas pressure during sputtering was 4 x 10-3To
It was set as rr.

Cスパッタ時投入電力は1 kwとし、膜厚は基板の走
行速度を変えて調節した。
The power input during C sputtering was 1 kW, and the film thickness was adjusted by changing the running speed of the substrate.

実施例 第1表に得られたO、ocr 合金膜の組成及び磁気特
性を示す。
Example Table 1 shows the composition and magnetic properties of the O, ocr alloy film obtained.

第   λ  表 D 評価結果 第3図に示した計測方法によシ、磁気記録媒体の耐久性
を評価した。
Table D Evaluation Results The durability of the magnetic recording medium was evaluated using the measurement method shown in FIG.

第4図に評価結果を示す。横軸に繰り返し回数N1縦軸
に摩擦係数μの挙動を示す。
Figure 4 shows the evaluation results. The horizontal axis shows the number of repetitions N, and the vertical axis shows the behavior of the friction coefficient μ.

図よシ従来例のサンプルll−3は繰り返し回数10回
で急激に立ち上り、それ以上の繰シ返し回数では摩擦係
数が極端に大きくなっている事がわかる。しかし、本発
明に係わるサンプル[−1,2は、急激な立ち上りはな
く、100回までの繰シ返し回数に対して若干の上昇は
認められるものの、はぼ平担に変化している事がわかる
As shown in the figure, it can be seen that in the conventional sample 11-3, the friction coefficient suddenly rises after 10 repetitions, and the friction coefficient becomes extremely large at higher repetitions. However, in the samples [-1 and 2 related to the present invention, there is no sudden rise, and although a slight increase is observed with respect to the number of repetitions up to 100 times, the change is almost flat. Recognize.

又、試験後のサンプルを観察して比較したところ、サン
プルll−3に関しては、摩擦による傷が深く、かつ傷
が無数に入り、その為サンプルの金属光沢を全く失った
状態であったが、サンプdn−1,2に関しては、傷は
認められるものの、その数は少なく、金属光沢も十分に
保ったままであった。さらに×50〜×100倍の微分
干渉顕微鏡により表面観察を行ったところ、サンプル■
−3は非常に短いピッチで無数に傷が入り、CoCr層
がひどく摩耗している事が認められるが、サンプルll
−2は、傷のピッチが大きくて数が少なく、又、表面状
態が平滑で美しい状態であυ、形容するならば雪の上を
ソリが滑ったような跡となっており、Co Cr層の摩
耗は認められなかった。
In addition, when we observed and compared the samples after the test, we found that sample 11-3 had deep scratches due to friction and numerous scratches, and as a result, the sample had completely lost its metallic luster. Regarding samples dn-1 and dn-2, although scratches were observed, their number was small and the metallic luster remained sufficiently maintained. Furthermore, when the surface was observed using a differential interference microscope with a magnification of ×50 to ×100, the sample
-3 has numerous scratches with a very short pitch, and it is recognized that the CoCr layer is severely worn, but sample 11
In case of -2, the pitch of the scratches is large and the number of scratches is small, and the surface condition is smooth and beautiful. No wear was observed.

従って、サンプルI+−1,2がサンプル■−3に比較
して著しく耐久性が良い事が確認できた。
Therefore, it was confirmed that Samples I+-1 and 2 had significantly better durability than Sample 2-3.

以上によシ、Co Or金合金Inを含有させる事によ
シ、滑シ性及び耐摩耗性(耐久性)を著しく向上させる
事ができることがわかる。
From the above, it can be seen that by containing the CoOr gold alloy In, the lubricity and wear resistance (durability) can be significantly improved.

E  In含有率の膜厚依存性 Tls土にIn金属の小片を配置して作製した0oOr
In合金薄膜の平均In含有率は第2表に示したとおり
であるが、膜厚方向には表面に近い方がInの含有率が
増加している。このように、潤滑材としての石が界面に
多く存在す対向ターゲット式スパッタ法では基板40の
走行方向の下流側のターゲラ) T+のIn濃度を高く
するのみで効果的に形成できる。
E Film thickness dependence of In content Tls 0oOr fabricated by placing small pieces of In metal on soil
The average In content of the In alloy thin film is shown in Table 2, and the In content increases closer to the surface in the film thickness direction. As described above, in the facing target sputtering method in which a large amount of stone as a lubricant is present at the interface, the target layer (T+) on the downstream side in the traveling direction of the substrate 40 can be effectively formed simply by increasing the In concentration.

第5図に得られた膜厚(δ)とIn濃度の関係を示す。FIG. 5 shows the relationship between the obtained film thickness (δ) and In concentration.

膜厚(δ)の大小にかかわらず、全厚みio。Regardless of the size of the film thickness (δ), the total thickness io.

係に対してのIn濃度の分布は平均濃度100係に対し
第5図の特性を有する。
The distribution of the In concentration for the average concentration has the characteristics shown in FIG. 5 for the average concentration of 100.

すなわち、界面に臨接する領域でのIn濃度は微量な平
均濃度でも潤滑性能の向上に貢献できる。
That is, even if the In concentration in the region adjacent to the interface is a small average concentration, it can contribute to improving the lubrication performance.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は対向ターゲット式スパッタ装置の構成図、第2
図、第3図は耐久テストの説明図、第4図は実施例上の
摩擦係数の変化を示すグラフ、第5図は膜厚方向のIn
#度分布を示すグラブである。 10゛真空容器、20:排気系、30:ガス導入系、4
0 基板、50:電力供給手段、T1.T2:ターゲッ
ト 矛 2 図 + 3 図 +    2    5   10  20    S
D   I”N(gB数) 矛4図 矛5 図
Figure 1 is a configuration diagram of the facing target type sputtering equipment, Figure 2
Figure 3 is an explanatory diagram of the durability test, Figure 4 is a graph showing changes in the friction coefficient in the example, and Figure 5 is a graph showing the change in the friction coefficient in the film thickness direction.
# This is a grab showing the degree distribution. 10゛Vacuum container, 20: Exhaust system, 30: Gas introduction system, 4
0 substrate, 50: power supply means, T1. T2: Target spear 2 Figure + 3 Figure + 2 5 10 20 S
D I”N (number of gB) 4 figures, 5 figures

Claims (1)

【特許請求の範囲】 1、 磁気記録層としてコバルト系合金からなる金属薄
膜を有する磁気記録媒体において、前記金属薄膜が低融
点金属を含むことを特徴とする磁気記録媒体。 2 前記低融点金属の濃度が前記金属薄膜の内表面側よ
り外表面側で高い特許請求の範囲第1項記載の磁気記録
媒体。 & 前記金属薄膜が膜面に垂直方向に磁化容易軸を有す
る垂直磁化膜でちる特許請求の範囲第1項若しくは第2
項記載の磁気記録媒体。 生 磁気記録層として、低融点金属を含むコバルト系合
金からなる金属薄膜を有する磁気記録媒体の製造法にお
いて、前記金属薄膜を対向ターゲット式スパッタ法によ
多形成するととを特徴とする磁気記録媒体の製造法。 5 ターゲットの一方の低融点金属の含有率を他方より
高くすると共に、前記磁気記録媒体の基板を低融点金属
の含有率の低いターゲットから高いターゲットの方へそ
゛の側方を連続的に移送しつつ前記金属薄膜を形成する
特許請求の範囲第4項記載の磁気記録媒体の製造法。
[Claims] 1. A magnetic recording medium having a metal thin film made of a cobalt-based alloy as a magnetic recording layer, wherein the metal thin film contains a low melting point metal. 2. The magnetic recording medium according to claim 1, wherein the concentration of the low melting point metal is higher on the outer surface side of the metal thin film than on the inner surface side. & Claim 1 or 2, wherein the metal thin film is a perpendicularly magnetized film having an axis of easy magnetization perpendicular to the film surface.
Magnetic recording medium described in Section 1. A method for manufacturing a magnetic recording medium having a metal thin film made of a cobalt-based alloy containing a low melting point metal as a magnetic recording layer, characterized in that the metal thin film is multi-formed by a facing target sputtering method. manufacturing method. 5. Making one of the targets have a higher content of a low melting point metal than the other, and continuously transferring the substrate of the magnetic recording medium from the target with a lower content of the low melting point metal to the target with a higher content of the low melting point metal. 5. The method of manufacturing a magnetic recording medium according to claim 4, wherein the metal thin film is formed while forming the metal thin film.
JP57223900A 1982-12-22 1982-12-22 Magnetic recording medium and its production Pending JPS59116927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57223900A JPS59116927A (en) 1982-12-22 1982-12-22 Magnetic recording medium and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57223900A JPS59116927A (en) 1982-12-22 1982-12-22 Magnetic recording medium and its production

Publications (1)

Publication Number Publication Date
JPS59116927A true JPS59116927A (en) 1984-07-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP57223900A Pending JPS59116927A (en) 1982-12-22 1982-12-22 Magnetic recording medium and its production

Country Status (1)

Country Link
JP (1) JPS59116927A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281120A (en) * 1986-05-29 1987-12-07 Hitachi Maxell Ltd Magnetic recording medium and its production
CN115790229A (en) * 2023-02-13 2023-03-14 成都天保节能环保工程有限公司 Structure and method suitable for fluidized bed heat storage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113133A (en) * 1978-12-04 1980-09-01 Matsushita Electric Ind Co Ltd Magnetic recording medium for thermal transcription

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113133A (en) * 1978-12-04 1980-09-01 Matsushita Electric Ind Co Ltd Magnetic recording medium for thermal transcription

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281120A (en) * 1986-05-29 1987-12-07 Hitachi Maxell Ltd Magnetic recording medium and its production
CN115790229A (en) * 2023-02-13 2023-03-14 成都天保节能环保工程有限公司 Structure and method suitable for fluidized bed heat storage

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