JPS5919090A - Sealing method of semiconductor element - Google Patents
Sealing method of semiconductor elementInfo
- Publication number
- JPS5919090A JPS5919090A JP57126681A JP12668182A JPS5919090A JP S5919090 A JPS5919090 A JP S5919090A JP 57126681 A JP57126681 A JP 57126681A JP 12668182 A JP12668182 A JP 12668182A JP S5919090 A JPS5919090 A JP S5919090A
- Authority
- JP
- Japan
- Prior art keywords
- spacer
- semiconductor element
- main body
- lid
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、冷却を必要とする半導体素子の封着方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for sealing a semiconductor element that requires cooling.
最近、高速演算素子、高感度赤外検知素子の研！究が多
方面でなされている。これらの素子は従来のＳｌに代わ
り化合物半導体または超伝導材料等の新材料を使用し、
゛また、使用温度も液体チツ素、液体ヘリウム温度で動
作させるものが大部分である。しかし、このような低温
動作をさせる上で、信頼性に影響を及ばず最も大きな点
は、空気中の水分や酸素が氷または液体酸素として、素
子表面に付着ｔ／％素子特性及び寿命を劣化させること
である。Recently, we have been working on high-speed calculation elements and high-sensitivity infrared detection elements! Research is being conducted in many areas. These devices use new materials such as compound semiconductors or superconducting materials instead of conventional Sl,
``Also, most of them operate at liquid nitrogen or liquid helium temperatures. However, in order to operate at such a low temperature, the biggest problem without affecting reliability is that moisture and oxygen in the air adhere to the element surface as ice or liquid oxygen and deteriorate the element characteristics and life. It is to let
上記の現象を防ぐには、素子は使用温度によりチッ素、
ヘリウム等のガス中に封入するか、真空中に封じる必要
がある。To prevent the above phenomenon, the element must be made of nitrogen or
It must be sealed in a gas such as helium or in a vacuum.
ところで半導体素子の封入法としては、従来より、エポ
キシ１り１脂オだはガラス中に埋め込む方法、チッ素等
の不活性ガスで満たした容器で封じる方法があり斗だ赤
外検知器ではデユワ−瓶に封入する方法も用いられて来
た。しかし、エポキシ樹脂ｆｄ、不純物及び樹脂中の水
分等の拡散の問題があり信頼性が悪く又、ガラス中に埋
めこむ方法は封入時に温度を上げる必要があり、化合物
半導体には使用しにくかった。一方ガス中の封入は、封
入ガスの液化点より高い温度では信頼性は確保され、ま
たグローブボックス中で封入ができるため有効な手段で
はあるが、ガスを封入するため冷却する場合冷却時間が
長くなる欠点があった。オた赤外検知器に使用（〜だ場
合窓板に露が付着し、赤外検知特性が劣化したするとい
う欠点もある。一方、デユワ−瓶に封入する方法は以上
の様な欠点はないが、封入を行う手順が複雑でコスト高
となる。By the way, conventional methods for encapsulating semiconductor devices include embedding them in epoxy or glass, or sealing them in a container filled with an inert gas such as nitrogen. - Encapsulation in bottles has also been used. However, the epoxy resin fd has problems with diffusion of impurities and moisture in the resin, making it unreliable, and the method of embedding it in glass requires raising the temperature during encapsulation, making it difficult to use for compound semiconductors. On the other hand, sealing in gas is an effective method as it is reliable at temperatures higher than the liquefaction point of the filled gas and can be sealed in a glove box, but it takes a long time to cool the gas. There was a drawback. When used in an infrared detector (~), there is also the disadvantage that dew adheres to the window plate, deteriorating the infrared detection characteristics.On the other hand, the method of enclosing it in a dewar bottle does not have the above disadvantages. However, the enclosing procedure is complicated and costly.
また排気口より排気を行い、排気口を溶断して排気を完
了させるだめ、排気口を設ける分、小型化が困難である
。In addition, since exhaust is performed through the exhaust port and the exhaust must be completed by fusing the exhaust port, it is difficult to miniaturize the device due to the provision of the exhaust port.
本発明は上述の真空封入の問題点を解消し、現在半導体
素子のパッケージングに使用されている１）ＩＰ （デ
ュアル・イン・ライン・）くツケージ）、ＳＩＰ （シ
ングル争イン・ライン・）くツケーシ）、フラットハソ
ケージ等で真空封入を行うととを可能としたもので、真
空封入容器を含め素子全体のコストダウンを図り、加え
て容器の小型化を目的とする。The present invention solves the above-mentioned vacuum encapsulation problems, and improves the 1) IP (dual in-line) packaging and SIP (single in-line packaging) currently used for packaging semiconductor devices. This device enables vacuum encapsulation in a flat cage, etc., and aims to reduce the cost of the entire device including the vacuum encapsulation container, as well as downsize the container.
本発明は、封入容器本体と蓋部とを糾み合わせ、真空排
気装置内で本体と蓋部との間から排気を行ない、これを
外部より導入したレーザ光線で溶接するもので、まだ溶
接を正確にかつ、確実に行うため、低融点のスペーサを
使用した封着方法である。In the present invention, the enclosure main body and the lid are assembled together, the space between the main body and the lid is evacuated in a vacuum evacuation device, and the welding is performed using a laser beam introduced from the outside. This sealing method uses a low melting point spacer to ensure accuracy and reliability.
本発明により、半導体素子の封入容器において小型化が
容易になり、まだ形も目的に応じ種々の形にすることが
容易となる。このため、これまでこれらの素子を使用し
た装置全体の小型化が図れゐ。According to the present invention, it is easy to reduce the size of a semiconductor device enclosure, and it is also easy to make the container into various shapes depending on the purpose. For this reason, up to now it has not been possible to downsize the entire device using these elements.
寸だ、本発明によりコストダウンが図れると共Ｃ
に、製品検査も５ｉ−ＩＰで行われているＩ４テスター
を使用した検査が可能となることから製品の品質の向−
ヒが図れ／、）１、
斗〆Ｃ１従来、パッケージが困難とされた、ＧａＡｇ翠
子ジョセフＪン素子等も、本発明の方法を用い−Ｃ，小
形のパッケージに封入することが可能になり、信頼性の
向上を図れる。The present invention not only reduces costs, but also improves product quality by allowing product inspection to be performed using the I4 tester used in 5i-IP.
Using the method of the present invention, it is now possible to encapsulate GaAg elements, which were difficult to package in the past, into small packages. Reliability can be improved.
第１図に本発明の方法で使用した封入容器の概要を図示
する。封入容器は、熱伝導を良くするだめセラミックで
構成する。排気時に本体と蓋部のずれを防ぐため容器本
体周辺（シ１）に凹部をもうけ、ここにＬ字形の断面を
持つ低融点ガラスリングのスペーサ＋′４ｊを置きその
上に蓋１’Ｊ、３１を置く。スペーサにはレーザ光線の
吸収を良くするため鉄、コバルト等の金属元素をドープ
した低融点ガラスを用いる。本体中に半導体素子ｔ２５
）をエボ゛キシで固定し、端子；２０と半導体素子を金
線でボンディングにより接続する。本体、スペーサ、蓋
を第２図の様に構成し光学窓１滲を持つ排気装置（；６
）内に置き、排気装置をポンプＣ（樽で真空にする。こ
のとき封入容器（１勺本体とスペーサ、スペーサと蓋と
の間１より、封入容器内の排気が行われる。排気が完了
した後、本図に示す様に排気装置の石英の窓１３１を通
じ、ルビーレーザ光′４１を導入して、低融点ガラスを
溶融して、本体と蓋との接着を行う。その後排気装置１
例の真空を解除し、本体と蓋部との間に圧力を加え第３
図に示すように接着を完全にする。これにより、戊空封
入が完了する。尚、第２図において（′３υはレーザ光
源、り１邊は集光レンズ、ｔｌ（：ｔｌけミラー、１ｔ
・υはミラー駆動機構を示す。FIG. 1 shows an outline of the enclosure used in the method of the present invention. The enclosure is made of ceramic for good heat conduction. In order to prevent the main body and the lid from shifting during evacuation, a recess is made around the container main body (S1), a spacer +'4j made of a low melting point glass ring with an L-shaped cross section is placed in this recess, and the lid 1'J is placed on top of it. Place 31. The spacer is made of low-melting glass doped with a metal element such as iron or cobalt to improve laser beam absorption. Semiconductor element t25 in the main body
) is fixed with epoxy, and the terminal 20 and the semiconductor element are connected by bonding with gold wire. An exhaust system (; 6
), and the exhaust device is evacuated using pump C (barrel).At this time, the inside of the enclosure is evacuated from between the enclosure body and the spacer, and between the spacer and the lid. After that, as shown in this figure, ruby laser light '41 is introduced through the quartz window 131 of the exhaust device to melt the low melting point glass and bond the main body and the lid.
Release the vacuum in the example, apply pressure between the main body and the lid, and
Complete the adhesion as shown. This completes the blank encapsulation. In Fig. 2, ('3υ is a laser light source, 1 side is a condensing lens, tl (: tl is a mirror, 1t
・υ indicates the mirror drive mechanism.
〔発明の１１すの実施例〕
本体Ｃよセラミックの・−笑ならず各種のプラスチック
、ガラスか寸だ、サファイア、石英、金属とプラスチッ
ク、ガラスの混成でもよい。赤外検知特性
ノアイア等で翫成し、側面部は熱伝導の良くないプラス
チックを用いることにより、検知窓に水滴が付くのを防
＆−）る。[Eleventh Embodiment of the Invention] The main body C may be made of ceramic, various plastics, glass, sapphire, quartz, or a mixture of metal, plastic, and glass. The sensor is made of infrared sensing properties such as Noah, and the sides are made of plastic that does not have good heat conduction to prevent water droplets from forming on the detection window.
スベーサリ２、低融点ガラスのみならず、鉛、低融点ハ
ンダも使用可能である。Not only low-melting point glass but also lead and low-melting point solder can be used.
まだ、スペーサは封入容器を排気装置内に導入する以前
に第４図（ａ） 、 （ｂ）に示すように本体寸たは佐
部あるいは１１１す方にあらかじめ接着して本体または
蓋と一体化しておくことも可能である１、However, before the enclosure is introduced into the exhaust system, the spacer is integrated with the main body or lid by adhering it to the main body or the side of the main body, as shown in FIGS. 4(a) and (b). It is also possible to keep 1,
第１図は本発明による封着方法の封入前の封入容器の断
面図、第２図は排気及び溶着を行う装置の概略図、第３
図は本発明による封入後の容器の断面図、第４図は排気
装置に導入する前にスペーサを本体、蓋部と一体化した
本発明の封着方法における封入容器の変形例の断面図で
ある。
２１・・封入容器本体、２２・・・スペーサ、３３：反
射鏡駆動装置、３５：封入容器、３６：排気装置本体、
３８：排気ポンプ、３９：排気装置の窓。FIG. 1 is a cross-sectional view of the enclosure container before sealing according to the sealing method of the present invention, FIG. 2 is a schematic diagram of the device for evacuation and welding, and FIG.
The figure is a cross-sectional view of the container after being sealed according to the present invention, and FIG. 4 is a cross-sectional view of a modified example of the sealed container in the sealing method of the present invention in which the spacer is integrated with the main body and the lid before being introduced into the exhaust system. be. 21... Enclosure container body, 22... Spacer, 33: Reflector drive device, 35: Enclosure container, 36: Exhaust device main body,
38: Exhaust pump, 39: Exhaust device window.
Claims (1)
を固定した後、前記容器本体と前記蓋部の間に低融点物
質よりなるスペーサを組み合わせ、これを真空排気装置
内に導入して前記本体とスペーサ及び前記スペーサと蓋
部との間より排気を行った後、前記スペーサをレーザ光
線で可熱、溶融して前記本体と前記蓋部を接着すること
を特徴とする半導体素子の封着方法。After fixing the semiconductor element to the bottom of the enclosure including the main body and the lid, a spacer made of a low melting point substance is assembled between the container body and the lid, and this is introduced into a vacuum evacuation device to remove the Sealing of a semiconductor element, characterized in that after exhausting air between the main body and the spacer and the spacer and the lid, the spacer is heated and melted with a laser beam to bond the main body and the lid. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126681A JPS5919090A (en) | 1982-07-22 | 1982-07-22 | Sealing method of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126681A JPS5919090A (en) | 1982-07-22 | 1982-07-22 | Sealing method of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5919090A true JPS5919090A (en) | 1984-01-31 |
Family
ID=14941217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57126681A Pending JPS5919090A (en) | 1982-07-22 | 1982-07-22 | Sealing method of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5919090A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472736A (en) * | 1990-07-13 | 1992-03-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US8335050B2 (en) | 2007-04-03 | 2012-12-18 | Hitachi Global Storage Technologies, Netherlands B.V. | Disk drive with a solder preform hermetic seal |
-
1982
- 1982-07-22 JP JP57126681A patent/JPS5919090A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472736A (en) * | 1990-07-13 | 1992-03-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US8335050B2 (en) | 2007-04-03 | 2012-12-18 | Hitachi Global Storage Technologies, Netherlands B.V. | Disk drive with a solder preform hermetic seal |
| US9412420B2 (en) | 2007-04-03 | 2016-08-09 | HGST Netherlands B.V. | Hermetically sealing a disk drive assembly |
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