JPS5835945A - Sheath for semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a high degree of airtightness for the titled sheath by a method wherein, when a plate member of metal or ceramic is airtightly sealed at one end of the opening of a square cylinder body made of ceramic and a cap is heat-sealed by fusing at the other end of the opening, two through holes are provided on the tube-shaped body, and said plate member is welded while inert gas of low temperature is being flown into the through holes. CONSTITUTION:On the back of the ceramic four-cornered tube-shaped body 1 whereon a solid- state image pickup element 5 is provided on the front, a metal plate 4 is adhered in such a manner that it is bridged to the circumferential wall, and a cooling material 8 is installed on the back of the metal plate 4. Also, on the inner circumference of the opening of the cover member, a gold-plated layer 2 is coated, and after the element 5 has been arranged on the metal plate 4 which is exposed on the inside of the opening, a rectangular glass plate 6 which will be turned to a transparent cap is placed through the intermediary of a gold-plated plate 7 which is in contact with the gold-plated layer 2. Subsequently, the gold-plated plate 7, which is exposed on the circumference of the glass plate 6, and the gold-plated layer 2 are adhered using a thermo-pressure welding head 9. At this time, an air feeding hole 10 and an air exhausting hole 11 are provided on the circumference of the four-cornered tube-shaped body 1, inert gas of low temperature is flown into these holes, and these holes are blocked up after adhesion of the plate member, using metal plates 16 and 17.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an envelope for a semiconductor device, and more particularly to an envelope for a semiconductor device suitable for hermetically sealing by thermocompression bonding.

Recently, TV color cameras using CCDCD solid-state image elements have been developed, and there are so-called single-chip and two-chip types.Also, as a means to reduce the number of solid-state image sensors, a color filter is added to the incident optical path of the solid-state image sensor. It is well known to provide This color filter is selected depending on the imaging method, such as a monochromatic filter or a color stripe filter.In a solid-state image sensor that incorporates such a color filter in the incident optical path, the color filter is usually composed of an organic substance. When the temperature of the color filter exceeds 150°C to 200°C, the spectral sensitivity characteristics of the color filter (light wave wavelength characteristics)
It has the disadvantage that it changes. Furthermore, even if a slight amount of moisture is present, the above-mentioned spectral sensitivity characteristics change.

For this reason, a solid-state image sensor with a built-in color filter is enclosed in a confidential container. A fitting process is required.

In this case, it is required that the temperature of the atmosphere around the color filter be sealed at a low temperature of 150° C. or lower.

Therefore, in the past, the following K was used for hermetically sealed sealing. That is, as shown in FIG. 1, a metal plate, for example, a gold plating layer, is attached to the upper surface of a rectangular ceramic cylinder 1 having a rectangular cross-section, and a lead 3 is adhered to the side wall of the rectangular cylinder 1. A metal plate 4 is glued to the opening of the body 1. This metal plate 4
A solid-state image sensor 5 with a built-in color filter is mounted on the inner surface of the image sensor. On the other hand, a metal plate, for example, a gold-plated plate 1t, is attached around a glass plate 60 that is transparent to the incident light of the solid-state image sensor 5. The incident light window member formed in this way is attached to a gold-plated plate 7.
are overlapped so that they engage with the gold plating layer. moreover,
A cooling body 8t is provided to cool the metal plate 4 at the bottom, and after introducing an inert gas into the container, a hot thermocompression head 9f is pressed against the overlapping portion of the metal plate 7 and the gold plating layer 20 to weld them. It constituted a secret container.

However, although the cooling body 8 is cooled through the metal plate 4, the heat during thermal welding by the thermocompression head # is not applied through the metal plate 7, the gold plating layer 2, and the glass plate 6. The inert gas inside the container is heated, and the temperature of the color filter provided on the surface of the solid-state image sensor 5 also rises. For this reason, the spectral sensitivity characteristics also change, and there is a drawback that the fidelity of color reproduction is poor when an image is taken. That is, it was difficult to thermally weld the color filters when the temperature near them was low.

The present invention has been made in view of the above circumstances, and its purpose is to hermetically seal a ceramic plate with a metal t7'h on one open end of a ceramic cylindrical body, and At least two through holes are provided in the cylindrical body so that the cap can be heat welded to the cap, and the structure is such that low-temperature gas can be circulated through the through holes, thereby reducing the temperature rise during heat welding. It is an object of the present invention to provide an envelope for a semiconductor device that suppresses air leakage, has high airtightness, and can be sealed at extremely low temperatures.

An embodiment of the present invention will be described below with reference to the drawings. Note that the same parts as in FIG. 1 will be described with the same reference numerals.

In FIG. 2(A), a rectangular annular metal plate is attached to the upper surface of one opening side (the entire circumference of the slat cylinder 1) of a ceramic cylindrical body, for example, a rectangular ceramic cylindrical body 1 with a rectangular cross-section. For example, a gold plating layer 2 is provided, a lead 3 is bonded to the side wall of the cylindrical body 1, and a metal plate 4 is bonded to the other opening of the cylindrical body 1. Then, a solid-state image sensor 5t with a built-in color filter is mounted on the inner surface of the metal plate 4.

On the other hand, the other opening of the cylindrical body 1 is provided with a solid-state image sensor 5.
A cap, for example a rectangular glass plate 6, is provided which is transparent to the incident light. In this case, a rectangular ring-shaped metal plate, for example, a gold-plated plate 1, is attached around the glass plate 6. The incident light window members formed in this manner are stacked so that the gold-plated plate 7 engages with the gold-plated layer 2 of the cylinder 1.

Although this configuration is similar to the conventional one, the envelope of the present invention differs greatly in the following configuration. That is,
As shown in FIG. 2 ω) (C'), inert gas supply holes 10 and exhaust holes 11 with extremely small diameters are provided in the opposite short sides of the cylinder 10, respectively. The air supply hole 10 and the exhaust hole 11 are formed outside the gold plating layer 2, and gold plating layers 12 and 13 are attached to the surface of the cylindrical body 11 around these holes 10 and 11,
Furthermore, the air supply hole 1o and the exhaust hole 11 are filled with air/air, respectively.
An exhaust pipe 14 and an exhaust/f pipe 15 are coupled.

The envelope constructed in this way is sealed in the following manner. That is, an 8 ft cooling body is provided on the outer surface of the metal plate 4 to cool the metal plate 4, and an inert gas is introduced into the container. do. Then, by supplying cooled low-temperature inert gas from the air supply hole 10 and discharging the inert gas from the exhaust hole 11, the high-temperature thermocompression spatula "9" is placed in a state where the inert gas is circulating. A sealed container is constructed by pressing and welding the metal plate 1 and the gold plating layer 2 provided around the entire periphery of the cylinder body 1 to the overlapping portion of the metal plate 1 and the gold plating layer 2. After this welding,
The heat of the metal plate 7, gold plating layer 2, and glass plate 6 reaches a steady state, and the flow of the inert gas is stopped. That is, the heat energy accumulated in the metal plate 7, the gold plating layer 2, and the glass plate 6 is absorbed. Thereafter, as shown in FIG. 2(B), the 1st intake pipe 14 and the 1st exhaust pipe 4 pipe 15 are removed, a metal plate 16° 11 is provided, and this metal plate 1
6.17 and metal plating layer 12.13 are bonded by thermocompression head 1
Press 8 to bond with heat. This thermocompression bonding process consists of metal plate 1
Compared to thermocompression bonding of the gold plating layer 2 (that is, the entire periphery of the cylindrical body 1), the sealing area is small, ie only the hole 10.11, so thermocompression bonding can be performed with a small heat capacity.

In the above embodiments, the case where the case is applied to the envelope of a solid-state image sensor is explained, but it can be applied to any envelope of a semiconductor device whose characteristics deteriorate due to high temperature and low temperature. It can also be applied to semiconductor devices. Also,
Although a case has been described in which a glass plate is used as the cap, a metal plate may be used depending on the purpose. Furthermore, although a case has been described in which a metal plate is provided at the bottom of the solid-state image sensor, the present invention is not limited to a metal plate, and for example, a thin ceramic plate may be used. Furthermore, a structure in which an air supply hole and an exhaust hole are penetrated through the upper surface of the cylindrical body as one through hole will be described.

As detailed above, according to the present invention, a metal or ceramic plate is hermetically sealed to one open end of a ceramic cylinder, and a cap is heat-welded to the other open end of the upper cylinder. At least two through holes are provided in the body, and a low temperature inert gas can flow through the through holes.
! This suppresses the temperature rise during thermal welding,
It is possible to provide an envelope for a semiconductor device that has high airtightness and can be sealed at an extremely low temperature.

[Brief explanation of the drawing]

FIG. 1 is a side cross-sectional view for explaining the envelope of a conventional semiconductor device, and FIG. 2 (4) to ■ are cross-sectional views for explaining an embodiment of the present invention. Figures (B) and (B) are cross-sectional views taken along the line B-B in figure (4), and Figure 0 is a cross-sectional view taken along the line τ-C in figure (4).' 1. ...Ceramic cylinder, 2...Gold plating layer, 3...Lead, 4...Metal plate, 5...Solid-state image sensor, 6...Glass plate, 7...Metal plate, 8 ... Cooling body, 10 ... Air supply hole, 11 ... Exhaust hole, 12.1
3... Gold plating layer, 14... Supply pipe, 15...
・Exhaust pipe, 16.11...Metal plate, 19.18-
・Thermocompression bonding head. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 (A) Figure 2 (C) CD)

Claims (3)

[Claims] (1) A cylinder made of ceramics, a plate made of metal or ceramics attached to one open end of the cylinder,
A cap attached to the other open end of the cylindrical body, at least two through holes provided in the cylindrical body, and a lid body provided so as to close each of the through holes. - An envelope of a semiconductor device characterized by: (2) The envelope for a semiconductor device according to claim 1, wherein the through hole is located outside the cap attachment portion. (3) The envelope for a semiconductor device according to claim 1, wherein the lid body is a metal plate bonded by thermocompression.