CN100411183C - Infrared imaging sensor and its vacuum packing method - Google Patents
Infrared imaging sensor and its vacuum packing method Download PDFInfo
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- CN100411183C CN100411183C CNB2005100672669A CN200510067266A CN100411183C CN 100411183 C CN100411183 C CN 100411183C CN B2005100672669 A CNB2005100672669 A CN B2005100672669A CN 200510067266 A CN200510067266 A CN 200510067266A CN 100411183 C CN100411183 C CN 100411183C
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- imaging sensor
- infrared imaging
- infrared
- ceramic
- getter
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Abstract
The present invention relates to an infrared imaging sensor and a vacuum packing method thereof. The infrared imaging sensor comprises a ceramic base seat, a metal upper cover and an infrared filter, wherein the ceramic base seat is stuck with an infrared imaging sensor chip, and the inner face of the metal upper cover is provided with getter; the infrared filter is used for sealing a light transmission opening of the metal upper cover. The vacuum packing method is characterized in that the ceramic base seat, the metal upper cover and the infrared filter are respectively heated in a vacuum chamber body, and the ceramic base seat, the metal upper cover and the infrared filter are stuck and welded into a whole by the activating getter.
Description
Technical field
The present invention is relevant for a kind of infrared imaging sensor and manufacture method thereof, particularly relevant for a kind of infrared imaging sensor and manufacture method thereof of Vacuum Package.
Background technology
Along with the quick progress of semi-conductor industry and electronic technology, the manufacturing technology of infrared ray sensor also is showing improvement or progress day by day.Infrared ray sensor not only can utilize medically, carries out the measurement of body temperature, more can be used in science, commerce and the military affairs, on purposes such as laser detecting, guided missile guiding, infrared spectrometer, remote controller, alarm, thermal imagery scouting.And infrared ray sensor mainly can be divided into pattern of fever (thermal) and photon type (photon) two big classes.Because thermal infrared transducer is comparatively convenient in the use, general application is also comparatively extensive.
Thermal infrared imageing sensor is generally all near working and room temperature, but because the thermal conduction effect of air, the heat that the target thermal source is dropped on the transducer is run off in a large number, in order to improve sensitivity, so infrared ray sensing crystalline substance side (die) generally must closely packed in vacuum, and more often utilize getter to guarantee certain vacuum degree for a long time.In addition, in order to ensure infrared ray sensor energy operate as normal, often comprise a thermoelectric (al) cooler (thermo-electrical cooler) in the encapsulation as steady temperature device, to carry out the stable control of temperature.
The encapsulation of traditional thermal infrared imageing sensor generally is to utilize base of ceramic and infrared filter to carry out.Infrared imaging sensor crystalline substance side is fixed on the thermoelectric steady temperature device, and thermoelectric steady temperature device then is fixed on the base of ceramic.After base of ceramic and infrared filter weldbonding are good, to encapsulate inside and vacuumize via being attached at a exhaust tube on the base of ceramic again, again pipe is sealed after waiting to have taken out vacuum, then be placed with getter (getter) in the pipe in advance, to keep the vacuum degree in the transducer.
Therefore, the encapsulation of thermal infrared imageing sensor traditionally, after finishing, encapsulation need carry out the processing procedure of vacuum suction, and then exhaust tube sealed, not only make the processing procedure complexity, and, make installable getter quantity be subjected to the capacity limitation of exhaust tube because getter is mounted in the exhaust tube, if the quantity of getter is not enough, the vacuum degree in the transducer and the sensitivity of infrared imaging sensor will be influenced obviously.
Summary of the invention
In view of the aforementioned technical background, infrared ray sensor need be kept certain vacuum degree, to guarantee normal work.The packaged type of traditional thermal infrared transducer, processing procedure complexity not only, and be subject to the size of exhaust tube, and influence the configuration amount of getter, will cause infrared ray sensor to keep the bottleneck of vacuum degree.
One of purpose of the present invention provides a kind of infrared imaging sensor and vacuum packaging method thereof, can simplify the required encapsulation procedure of infrared imaging sensor.
Another object of the present invention, provide a kind of infrared imaging sensor and vacuum packaging method thereof, suitable being installed in the infrared imaging sensor of getter with the configuration amount of increase getter, and then can be reached the required vacuum requirements of infrared imaging sensor.
Another purpose of the present invention, provide a kind of infrared imaging sensor and vacuum packaging method thereof, utilize the Vacuum Package member and the processing procedure of three-member type, not only make suitable being installed in the infrared imaging sensor of getter, and make things convenient for infrared imaging sensor to carry out Vacuum Package, the sensitivity of infrared imaging sensor and useful life all can effectively be improved.
According to above-described purpose, the invention provides a kind of infrared imaging sensor, include a base of ceramic, a metal top cover and an infrared filter; Wherein adhesion one infrared imaging sensor crystalline substance side on the base of ceramic then have a light-permeable opening in the middle of the metal top cover, and an inner face of metal top cover is used for disposing getter; Infrared filter then is to be used for the light-permeable opening of sealing metal loam cake.
This infrared imaging sensor also includes a thermoelectric steady temperature device, and this thermoelectric steady temperature device can be coupled between base of ceramic and the infrared imaging sensor crystalline substance side, also can be coupled in side under the base of ceramic.When selecting that the steady temperature device of thermoelectricity is coupled under the base of ceramic side, preferably after the infrared imaging sensor Vacuum Package finishes, in atmosphere, the steady temperature device of thermoelectricity is adhered to side under the base of ceramic.
Above-mentioned infrared filter more can have anti-reflecting layer, to reduce ultrared reflectivity, improves penetrance.Wherein base of ceramic, metal top cover and infrared filter are in a vacuum cavity (chamber), are heated respectively, with activation getter and with base of ceramic, metal top cover and infrared filter weldbonding together.
Because getter is mounted in the inner face of metal top cover, not only can influence reading of infrared image, and more can effectively increase the configuration area, to increase the configuration amount of getter.
The present invention also discloses a kind of vacuum packaging method of infrared imaging sensor simultaneously.The method includes the following step: a base of ceramic, a metal top cover and an infrared filter are provided.An infrared imaging sensor crystalline substance side wherein is coupled on the base of ceramic.Metal top cover then has a light-permeable opening, and the inner face of metal top cover disposes getter.And infrared filter is preferably an infrared filter with anti-reflecting layer, to reduce ultrared reflectivity, improves penetrance.
Base of ceramic, metal top cover and infrared filter are inserted in the vacuum cavity, and respectively heating ceramic pedestal, metal top cover and infrared filter in a vacuum, with the activation getter, and with base of ceramic, metal top cover and infrared filter weldbonding together.This infrared imaging sensor more can be coupled with a thermoelectric steady temperature device, for example is that this thermoelectric steady temperature device is coupled between base of ceramic and the infrared imaging sensor crystalline substance side, or is coupled in the below of base of ceramic.
Therefore, infrared imaging sensor of the present invention and be used for the vacuum packaging method of this infrared imaging sensor of Vacuum Package, can simplify the required encapsulation step of infrared imaging sensor effectively, the inboard that is installed on metal top cover that can getter is suitable more, not only do not influence reading of infrared image, and can increase the configuration amount of getter, make infrared imaging sensor reach required vacuum requirements, more can improve the sensitivity and the useful life of infrared imaging sensor.
Description of drawings
For above-mentioned and other purpose, feature, advantage and the embodiment of the present invention can be become apparent, being described in detail as follows of accompanying drawing:
Fig. 1 is the part schematic perspective view of infrared imaging sensor of the present invention;
Fig. 2 is the side schematic view of a preferred embodiment of infrared imaging sensor of the present invention; And
Fig. 3 is the side schematic view of another preferred embodiment of infrared imaging sensor of the present invention.
Description of reference numerals
100: infrared imaging sensor 110: thermoelectric steady temperature device
120: pedestal 122: pin and weld pad
124: infrared image sensing crystalline substance side 130: loam cake
132: getter 134: opening
140: filter
210: base of ceramic 211: pin and weld pad
220: metal top cover 221: getter
230: infrared filter 240: infrared image sensing crystalline substance side
241: routing 242: thermoelectric steady temperature device
243: lead 310: base of ceramic
311: pin and weld pad 320: metal top cover
321: getter 330: infrared filter
340: infrared image sensing crystalline substance side 341: routing
342: thermoelectric steady temperature device 343: lead
Embodiment
Infrared imaging sensor of the present invention and vacuum packaging method thereof not only can be simplified the step of the required encapsulation procedure of infrared imaging sensor, more can be with suitable being installed in the infrared imaging sensor of getter, make infrared imaging sensor reach required vacuum requirements, and then improve its sensitivity and useful life.Below will clearly demonstrate design of the present invention with accompanying drawing and detailed description.
Fig. 1 is the part schematic perspective view of infrared imaging sensor of the present invention.As shown in FIG., infrared imaging sensor 100 of the present invention includes filter 140, loam cake 130, pedestal 120 and thermoelectric steady temperature device 110.Wherein filter 140 top that is positioned at loam cake 130 is used for opening 134 sealings with loam cake 130, to keep the vacuum degree of infrared imaging sensor 100, and can provide infrared penetration simultaneously, so that the infrared image sensing crystalline substance side (die) 124 that is installed on the pedestal 120 can carry out reading of infrared image.Filter 140 preferred one has the infrared filter of anti-reflecting layer, reducing ultrared reflectivity, and then improves penetrance.
The below of pedestal 120 then is equipped with thermoelectric steady temperature device 110, is used for stablizing the working temperature of infrared imaging sensor 100.Wherein, 122 of pin and weld pads are used for infrared image sensing crystalline substance side 124 and the outside electronic circuit on the electrical couplings pedestal 120.The inboard of loam cake 130 then is equipped with getter 132, after finishing sealing at infrared imaging sensor 100, effectively keeps and the vacuum degree that improves inside.
Fig. 2 is the side schematic view of a preferred embodiment of infrared imaging sensor of the present invention.In order to improve thermal infrared image sensor sensitivity, infrared ray sensing crystalline substance side must be sealed in the vacuum, more utilizes getter to guarantee required vacuum degree requirement for a long time.
Infrared imaging sensor of the present invention is fixed in infrared imaging sensor crystalline substance side 240 on the base of ceramic 210 earlier, and utilizes pin and weld pad 211 on routing 241 electrical couplings infrared imaging sensor crystalline substance sides 240 and the base of ceramic 210.The inner face of metal top cover 220 is settled getter 221, preferably is covered with getter 221 improving the configuration amount of getter 221, and the top of metal top cover 220 infrared filter 230 that then is coupled is to allow ultrared penetrating.
In order to make infrared imaging sensor crystalline substance side 240 can effectively be sealed in the infrared imaging sensor of the present invention, and keep appropriate vacuum, at first incite somebody to action base of ceramic 210, the metal top cover 220 of electrical couplings infrared imaging sensor crystalline substance side 240, and infrared filter 230 is placed in the vacuum cavity, then heat respectively again with activation getter 221, and with base of ceramic 210, metal top cover 220, and infrared filter 230 weldbondings together.
Because infrared imaging sensor of the present invention is in a vacuum base of ceramic 210, metal top cover 220 and infrared filter 230 to be added thermal bonding, make infrared imaging sensor not only can engage easily, and after getter 221 activation with metal top cover 220 inboards, more can effectively keep the vacuum degree of infrared imaging sensor.Because getter 221 is by the suitable inboard that is installed on metal top cover 220, therefore the inboard that can bigger area be attached to metal top cover 220, for example be abound with in the inboard of metal top cover 220, make getter 221 can bring into play maximum inspiratory effects, kept so that the vacuum degree of infrared imaging sensor can be suitable.
Therefore, the present invention's infrared imaging sensor not only can conveniently encapsulate, and can effectively increase the vacuum degree of infrared imaging sensor inside, more can improve the useful life of infrared ray sensor and the sensitivity of infrared ray sensor.After the encapsulation of finishing infrared imaging sensor, then the more steady temperature device 242 of thermoelectricity is adhered to below the base of ceramic 210, with the working temperature of control infrared imaging sensor, make measuring that infrared imaging sensor can be stable.Thermoelectric steady temperature device 242 then utilizes lead 243, so that required power supply to be provided.The steady temperature device 242 preferred thermoelectric (al) coolers (thermo-electrical cooler) of described thermoelectricity.
Consult Fig. 3, be the side schematic view of another preferred embodiment of infrared imaging sensor of the present invention.As shown in FIG., be fixed with a thermoelectric steady temperature device 342 on the base of ceramic 310 of this infrared imaging sensor, infrared imaging sensor crystalline substance side 340 of then adhering again on it.Infrared imaging sensor crystalline substance side 340 utilizes pin and the weld pad 311 on routing 341 and the base of ceramic 310 to electrically connect, and thermoelectric steady temperature device 342 then utilizes lead 343 and pin and weld pad 311 to electrically connect.
When carrying out this infrared imaging sensor encapsulation, earlier above-mentioned base of ceramic 310, metal top cover 320 and infrared filter 330 are placed in the vacuum cavity, heating respectively then is with activation getter 321 and with base of ceramic 310, metal top cover 320 and infrared filter 330 weldbondings together.Wherein, the inner face of metal top cover 320 is covered with getter 321, increasing the configuration amount of getter 321, and improves the vacuum degree after the infrared imaging sensor encapsulation, effectively increases the sensitivity and the useful life of infrared imaging sensor.
Therefore, infrared imaging sensor of the present invention and vacuum packaging method not only can be simplified the encapsulation procedure of infrared imaging sensor, more can effectively increase the configuration amount of getter, with the vacuum degree of raising infrared imaging sensor, and the sensitivity of infrared imaging sensor and useful life are effectively improved.
As the personnel that are familiar with this technology understand, and the above only is the present invention's preferred embodiment, is not in order to limit claim of the present invention.All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the claim protection range.
Claims (5)
1. infrared imaging sensor comprises at least:
One base of ceramic is adhered an infrared imaging sensor crystalline substance side thereon;
One metal top cover has a light-permeable opening, and wherein an inner face of this metal top cover is abound with getter, to increase the configuration amount of this getter; And
One infrared filter, be coupled on the described metal top cover, wherein said base of ceramic, metal top cover and infrared filter are heated respectively in a vacuum cavity, to activate this getter and with described base of ceramic, described metal top cover and described infrared filter weldbonding together.
2. infrared imaging sensor as claimed in claim 1 is characterized in that, also comprises a thermoelectric steady temperature device and is coupled between described base of ceramic and the infrared imaging sensor crystalline substance side.
3. infrared imaging sensor as claimed in claim 1 is characterized in that, also comprises the below that a thermoelectric steady temperature device is coupled in described base of ceramic.
4. infrared imaging sensor as claimed in claim 3 is characterized in that, the steady temperature device of described thermoelectricity is after described infrared imaging sensor Vacuum Package finishes, should the steady temperature device of thermoelectricity in atmosphere adhere to described base of ceramic below.
5. infrared imaging sensor as claimed in claim 1 is characterized in that described infrared filter has anti-reflecting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100672669A CN100411183C (en) | 2005-04-18 | 2005-04-18 | Infrared imaging sensor and its vacuum packing method |
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| CNB2005100672669A CN100411183C (en) | 2005-04-18 | 2005-04-18 | Infrared imaging sensor and its vacuum packing method |
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| CN1855517A CN1855517A (en) | 2006-11-01 |
| CN100411183C true CN100411183C (en) | 2008-08-13 |
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| CNB2005100672669A Expired - Fee Related CN100411183C (en) | 2005-04-18 | 2005-04-18 | Infrared imaging sensor and its vacuum packing method |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4665959B2 (en) * | 2007-11-30 | 2011-04-06 | 日本電気株式会社 | Vacuum package |
| CN101893483B (en) * | 2010-05-04 | 2012-03-07 | 电子科技大学 | Packaging technology and packaging device of non-refrigerated infrared focal plane array device |
| CN102956661B (en) * | 2012-11-21 | 2016-01-20 | 烟台睿创微纳技术有限公司 | A kind of chip packaging method and encapsulating structure thereof |
| CN102997999A (en) * | 2012-11-26 | 2013-03-27 | 烟台睿创微纳技术有限公司 | Infrared focal plane array detector |
| CN105157853A (en) * | 2015-08-17 | 2015-12-16 | 电子科技大学 | Non-refrigeration infrared focal-plane array detector and manufacture method thereof |
| CN107727246A (en) * | 2016-08-10 | 2018-02-23 | 菱光科技股份有限公司 | The infrared ray sensor and its method for packing of high vacuum |
| CN107742654B (en) * | 2016-08-10 | 2019-06-04 | 菱光科技股份有限公司 | Infrared sensor high vacuum encapsulating structure and its method |
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| CN2033153U (en) * | 1988-03-01 | 1989-02-22 | 山东淄博无线电八厂 | Thermal resistance infrared radiation sensor |
| US5397897A (en) * | 1992-04-17 | 1995-03-14 | Terumo Kabushiki Kaisha | Infrared sensor and method for production thereof |
| JPH0886691A (en) * | 1994-09-16 | 1996-04-02 | Hokuriku Electric Ind Co Ltd | Pyroelectric infrared detector |
| CN1158010A (en) * | 1995-12-22 | 1997-08-27 | 株式会社村田制作所 | Infrared detector |
| US5914488A (en) * | 1996-03-05 | 1999-06-22 | Mitsubishi Denki Kabushiki Kaisha | Infrared detector |
| CN2511953Y (en) * | 2001-12-07 | 2002-09-18 | 中国科学院上海技术物理研究所 | Air-tight casing for low temperature multi-element infrared detector |
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2005
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2033153U (en) * | 1988-03-01 | 1989-02-22 | 山东淄博无线电八厂 | Thermal resistance infrared radiation sensor |
| US5397897A (en) * | 1992-04-17 | 1995-03-14 | Terumo Kabushiki Kaisha | Infrared sensor and method for production thereof |
| JPH0886691A (en) * | 1994-09-16 | 1996-04-02 | Hokuriku Electric Ind Co Ltd | Pyroelectric infrared detector |
| CN1158010A (en) * | 1995-12-22 | 1997-08-27 | 株式会社村田制作所 | Infrared detector |
| US5914488A (en) * | 1996-03-05 | 1999-06-22 | Mitsubishi Denki Kabushiki Kaisha | Infrared detector |
| CN2511953Y (en) * | 2001-12-07 | 2002-09-18 | 中国科学院上海技术物理研究所 | Air-tight casing for low temperature multi-element infrared detector |
| CN1452239A (en) * | 2003-05-06 | 2003-10-29 | 财团法人工业技术研究院 | Infrared element air tight chamber packaging base table and configuration |
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| CN1855517A (en) | 2006-11-01 |
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