JPS59188143A - Multilayer interconnection member and method of manufacturing the same - Google Patents

Multilayer interconnection member and method of manufacturing the same

Info

Publication number
JPS59188143A
JPS59188143A JP6075483A JP6075483A JPS59188143A JP S59188143 A JPS59188143 A JP S59188143A JP 6075483 A JP6075483 A JP 6075483A JP 6075483 A JP6075483 A JP 6075483A JP S59188143 A JPS59188143 A JP S59188143A
Authority
JP
Japan
Prior art keywords
wirings
mask
insulating film
layer
multilayer interconnection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6075483A
Other languages
Japanese (ja)
Inventor
Nobuo Owada
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6075483A priority Critical patent/JPS59188143A/en
Publication of JPS59188143A publication Critical patent/JPS59188143A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the mask accuracy for forming a plurality of connecting holes for connecting between different wirings and to improve the reliability and the integration of multilayer interconnection members by providing a dummy pedestal. CONSTITUTION:An insulating film 2 made of dioxidized silicon is formed on a semiconductor substrate 1, and a dummy pedestal 4 having no function as the wirings 3 of the first layer and as the wirings are formed. An insulating film 5 is formed, and the wirings 6 of the second layer is formed. An insulating film 7 is formed, a mask material 8 is patterned, and a mask having a hole 9 is formed. The primary base of the projection grown by multilamination is alleviated by a dummy pedestal 4, and the mask accuracy in the formed portion of the connecting hole can be improved. Connecting holes 10, 11 are formed and wirings 12, 13 of the third layer connected to the wirings 6 are formed.
JP6075483A 1983-04-08 1983-04-08 Multilayer interconnection member and method of manufacturing the same Pending JPS59188143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6075483A JPS59188143A (en) 1983-04-08 1983-04-08 Multilayer interconnection member and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6075483A JPS59188143A (en) 1983-04-08 1983-04-08 Multilayer interconnection member and method of manufacturing the same

Publications (1)

Publication Number Publication Date
JPS59188143A true JPS59188143A (en) 1984-10-25

Family

ID=13151371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6075483A Pending JPS59188143A (en) 1983-04-08 1983-04-08 Multilayer interconnection member and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPS59188143A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114551A (en) * 1984-11-09 1986-06-02 Toshiba Corp Semiconductor integrated circuit device and pattern layout therefor
JPH0269977A (en) * 1988-09-05 1990-03-08 Hitachi Ltd Semiconductor integrated circuit device and method of forming the same
JPH0277133A (en) * 1988-09-13 1990-03-16 Hitachi Ltd Semiconductor device
US5229645A (en) * 1990-06-21 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JPH05326510A (en) * 1991-09-11 1993-12-10 Nec Corp Semiconductor device
US5910684A (en) * 1995-11-03 1999-06-08 Micron Technology, Inc. Integrated circuitry
US6091150A (en) * 1996-09-03 2000-07-18 Micron Technology, Inc. Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114551A (en) * 1984-11-09 1986-06-02 Toshiba Corp Semiconductor integrated circuit device and pattern layout therefor
JPH0269977A (en) * 1988-09-05 1990-03-08 Hitachi Ltd Semiconductor integrated circuit device and method of forming the same
JPH0277133A (en) * 1988-09-13 1990-03-16 Hitachi Ltd Semiconductor device
US5229645A (en) * 1990-06-21 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JPH05326510A (en) * 1991-09-11 1993-12-10 Nec Corp Semiconductor device
US5910684A (en) * 1995-11-03 1999-06-08 Micron Technology, Inc. Integrated circuitry
US6066553A (en) * 1995-11-03 2000-05-23 Micron Technology, Inc. Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry
US6432813B1 (en) 1995-11-03 2002-08-13 Micron Technology, Inc. Semiconductor processing method of forming insulative material over conductive lines
US6091150A (en) * 1996-09-03 2000-07-18 Micron Technology, Inc. Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms

Similar Documents

Publication Publication Date Title
KR870009472A (en) 3D integrated circuit and its manufacturing method
KR890015358A (en) Semiconductor substrate and manufacturing method
GB1522409A (en) Gang bonding interconnect tape for semiconductive devices and method of making same
JPS60115245A (en) Manufacture of semiconductor device
JPS59198733A (en) Semiconductor integrated circuit device
JPS60134440A (en) Semiconductor integrated circuit device
JPS63308386A (en) Semiconductor device and manufacture thereof
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS6279666A (en) Manufacture of bipolar semiconductor integrated circuit
JPS5334484A (en) Forming method for multi layer wiring
JPH02270342A (en) Manufacture of semiconductor device
JPH04249321A (en) Manufacture of semiconductor device
EP0362867A3 (en) Method for manufacturing semiconductor devices
US4603473A (en) Method of fabricating integrated semiconductor circuit
JPS63268258A (en) Semiconductor device
JPH0282626A (en) Method of interconnecting semiconductor device
JPS63301545A (en) Manufacture of semiconductor integrated circuit device
JPS5240969A (en) Process for production of semiconductor device
JPH04137652A (en) Semiconductor integrated circuit
JPS5324277A (en) Semiconductor devic e and its production
JPS62272556A (en) Three-dimensional semiconductor integrated circuit device and manufacture thereof
JPS63211739A (en) Semiconductor device
JPH04113648A (en) Semiconductor device, and evaluating and mounting method thereof
JPS60241231A (en) Manufacture of semiconductor integrated circuit device
JPS5350686A (en) Production of semiconductor integrated circuit