JPS59186354A - Metal member for lead frame - Google Patents
Metal member for lead frameInfo
- Publication number
- JPS59186354A JPS59186354A JP6117783A JP6117783A JPS59186354A JP S59186354 A JPS59186354 A JP S59186354A JP 6117783 A JP6117783 A JP 6117783A JP 6117783 A JP6117783 A JP 6117783A JP S59186354 A JPS59186354 A JP S59186354A
- Authority
- JP
- Japan
- Prior art keywords
- metal member
- lead frame
- thin film
- bonding
- carbons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract description 4
- -1 fatty acid hydrogen compound Chemical class 0.000 abstract description 4
- 239000003960 organic solvent Substances 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 abstract description 2
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 229950011008 tetrachloroethylene Drugs 0.000 abstract description 2
- 235000014113 dietary fatty acids Nutrition 0.000 abstract 2
- 229930195729 fatty acid Natural products 0.000 abstract 2
- 239000000194 fatty acid Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000012188 paraffin wax Substances 0.000 abstract 1
- 229940099259 vaseline Drugs 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000007747 plating Methods 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000003463 adsorbent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000010953 base metal Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011973 solid acid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000013020 steam cleaning Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体特に集積回路の実装に使用されるリード
フレーム用又はその中間体用の金属部材に関するもので
あり、特にダイレクトポンディングに好適な金属部材を
得んとするものである〇
従来トランジスターなどの半導体素子、特に集Ｍｔ回路
即チ、ＩＣ，Ｉ、ＳＩ、ＶＬＳＩ（以下、ＩＣと称す）
はり一ドフレームと称される金属基体上にマウントして
外部回路との導通がなされる。例えば第１図に示す如く
金属板条がら打ち抜かれるものであり、１はＩＣチップ
のマウント部、２はボンディング部、３は外部端子部で
ある。通常少なくとも上記１及び２の部分にＡｕ 、
Ａｇなどのメッキを施しＩＣチップをろう付けすると共
にＡｕ 細線を用いてチップ上の回路端子とボンディ
ング部とを超音波溶接などの手法で接続しているもので
ある。又リードフレームは高価なＮｉ −Ｆｅ 合金
、 Ｎｉ −Ｃｏ −Ｆｅ 合金が使用されるが、集
積度の向上と共に伝熱性が強く要求されるため、これら
の合金に代え七安価なＣｕ −Ｓｎ 、 Ｃｕ −Ｎｉ
−Ｓｎ 系などのＣｕ 合金が殆んど使用さｎる傾向
にある。更にコストを低下せしめるために前記Ａｕ 、
Ａｇメッキを省略して直接ブーツブを実装することが
強く望まれているＯ
ＩＣブーツブのろう付けはポリイミドやエポキシなどの
導電性接着剤を用いて行うことが出来るが、前記のボン
ディングは現行の貴金属」二への溶接に対し、卑金属へ
の接合が大きな問題となっている。即ち金属特に前記の
Ｃｕ やＣｕ 合金では酸化被膜を発生し易く、ボ
ンディングの大きな障害となっている。リードフレーム
は通常素材となる板条体をプレスにて打板も成型してか
ら実装工程に供給される。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a metal member for a lead frame used for mounting semiconductors, particularly integrated circuits, or an intermediate thereof, and is particularly directed to a metal member suitable for direct bonding. 〇 Conventional semiconductor devices such as transistors, especially integrated Mt circuits, IC, I, SI, VLSI (hereinafter referred to as IC)
It is mounted on a metal base called a beam frame and electrically connected to an external circuit. For example, as shown in FIG. 1, a metal plate strip is punched out, and 1 is an IC chip mounting part, 2 is a bonding part, and 3 is an external terminal part. Usually, at least parts 1 and 2 above contain Au,
The IC chip is plated with Ag or the like and brazed, and the circuit terminals on the chip and the bonding parts are connected using techniques such as ultrasonic welding using thin Au wires. In addition, expensive Ni-Fe alloys and Ni-Co-Fe alloys are used for lead frames, but as the degree of integration increases and heat conductivity is strongly required, these alloys are replaced with inexpensive Cu-Sn and Cu alloys. -Ni
-Cu alloys such as Sn-based alloys tend to be mostly used. In order to further reduce the cost, the Au,
It is strongly desired to omit Ag plating and directly mount the boot tab. Brazing of the IC boot tab can be done using a conductive adhesive such as polyimide or epoxy, but the above bonding is performed using current precious metals. Welding to base metals is a major problem compared to welding to base metals. That is, metals, especially the above-mentioned Cu and Cu alloys, tend to form an oxide film, which is a major hindrance to bonding. Lead frames are usually made by forming a strip of material using a press into a stamped plate and then supplying it to the mounting process.
本発明者等は前記のメッキを省略するダイレクトボンデ
ィングの欠陥原因が各種の工程条件に係り、実装置前の
リードフレーム表面が清浄に安定して保持されなければ
ならないことについて、リードフレームの処理について
鋭意研究を行った結果本発明に至ったものである。特に
本発明者等は前記素材がプレス工程又はプレス製品が実
装工程に供される際に実際上多くの場合不可避的にスト
ックされたり、又は７１ンドリング時に外気などにより
汚染酸化されることがその主因であることを究明し、実
装の際の表面清沙な状態にあるリードフレーム用金属部
材を得たもので、表面に炭素数１０以上の脂肪族炭化水
素化合物からなる薄膜を設けたことを特僧とするリード
フレーム用金属部材である。The inventors of the present invention have explained that the causes of defects in direct bonding that omit plating are related to various process conditions, and that the surface of the lead frame before the actual device must be kept clean and stable. The present invention was achieved as a result of intensive research. In particular, the present inventors believe that the main reason for this is that the material is unavoidably stocked in many cases during the pressing process or when the pressed product is subjected to the mounting process, or is contaminated and oxidized by outside air during 71-ndling. We have obtained a metal member for a lead frame that has a clean surface during mounting, and is unique in that it has a thin film made of an aliphatic hydrocarbon compound with a carbon number of 10 or more on the surface. This is a metal member for lead frames.
本発明においてリードフレーム用金属部材とは、前記ブ
レヌ品のほかプレス前の金属素材をも含むものである。In the present invention, the metal member for a lead frame includes not only the Brene product described above but also a metal material before pressing.
本発明において脂肪族炭化水素化合物とは直鎖状又は分
岐状或は環状の飽和炭化水素化合物であり、常温におい
て単体としては高粘流体或は固体状である。通常単一化
合物としてエリは分子１の異なる化合物の混合体として
入手される。例えば流動、固形酸は結晶性のノくラフイ
ン。In the present invention, the aliphatic hydrocarbon compound is a linear, branched, or cyclic saturated hydrocarbon compound, and as a single substance, it is a highly viscous fluid or solid at room temperature. Eri is usually obtained as a single compound or as a mixture of different compounds in the molecule. For example, liquid and solid acids are crystalline rough-in.
ワセリンなどであり、天然鉱油やこれを用いた市販潤滑
油は上記化合物より低分子であり且つ吸着性物質を含有
するため使用し得ないものである。Natural mineral oils and commercially available lubricating oils using these oils cannot be used because they have lower molecular weight than the above-mentioned compounds and contain adsorbent substances.
これらの化合物を低沸点の有機溶剤例えばベンジン、ト
リクロロエタン、テトラクロロエチレン、各種フレオン
類に溶解した濃度０．００１〜１．０％の溶液中に上記
の金属部材を浸漬、又は該溶液を金属部材表面にスプレ
ーしたりして一様に耐着せしめ溶媒を乾燥することによ
り部材表面に薄膜を形成することができる。The metal member is immersed in a solution of 0.001 to 1.0% concentration of these compounds dissolved in a low-boiling organic solvent such as benzene, trichloroethane, tetrachloroethylene, or various freons, or the solution is applied to the surface of the metal member. A thin film can be formed on the surface of the member by spraying or drying the solvent to make it uniformly resistant to adhesion.
このような処理は圧延やプレス加工油の脱脂工程に通常
同種の溶剤を用いるので、この脱脂工程に後続して実施
するのが便宜である。Since such a treatment usually uses the same type of solvent as the degreasing process for rolling or pressing oil, it is convenient to carry out this process subsequent to the degreasing process.
なお膜厚は通常１μ以下であり、０１〜０００５μのも
のが有効如使用される。The film thickness is usually 1 μm or less, and those with a thickness of 01 to 0005 μm are effectively used.
これらの化合物は銅合金などの金属表面に表面張力の作
中で展開して連続した撥水上の低表面エネルギー被膜を
形成し且つ大気中の酸素を遮断するため、大気汚染或は
表面酸化を防止することが出来る。更に該化合物は有機
溶剤に易溶であり、非吸着性であるため容易に洗浄除去
し且つ清浄な表面に回復することか出来る。即ち実装工
程の第１工程として通常の蒸気洗浄などにエリ十分に除
去しうるのでダイレクトボンデングを可能にする。These compounds develop on the surface of metals such as copper alloys under the action of surface tension, forming a continuous, water-repellent, low surface energy film and blocking oxygen in the atmosphere, thus preventing air pollution and surface oxidation. You can. Furthermore, since the compound is easily soluble in organic solvents and non-adsorbent, it can be easily removed by washing and the surface can be restored to a clean state. That is, as the first step of the mounting process, the surface area can be sufficiently removed by ordinary steam cleaning, thereby making direct bonding possible.
このように本発明における脂肪族炭化水素化合物薄膜は
上記の如き優れた効果を発揮するものであり、従来金属
特にＣｕ 又はＣｕ 合金の表面保護に広く使用さ
れる高級脂肪族アミン又はベンゾトリアゾールの如き吸
着性或は化学結合性の物質（従来物質）に比べて格段の
差異を生ずるものである。即ち従来物質にエリ被膜を設
けた場合には洗浄除去が極めて困難であり、アルカリ電
解洗浄や更に酸エツチングを必要とするものである。な
おこのことは本発明者が［実務表面技術Ｊ１９８１年３
月号Ｐ１２３や「伸銅技術研究会誌Ｊ １９８２．Ｖｏ
ｔ２１．Ｐ６４ に発表しているものである。As described above, the aliphatic hydrocarbon compound thin film of the present invention exhibits the above-mentioned excellent effects, and is similar to higher aliphatic amines or benzotriazole, which are conventionally widely used for surface protection of metals, especially Cu or Cu alloys. This produces a significant difference compared to adsorbent or chemically binding substances (conventional substances). That is, when an edge coating is provided on a conventional material, it is extremely difficult to wash and remove it, requiring alkaline electrolytic cleaning or further acid etching. This matter has been confirmed by the present inventor in [Practical Surface Technology J, 1981, 3].
Monthly issue P123 and “Copper Rolling Technology Research Society Journal J 1982.Vo
t21. This is what was announced on page 64.
従って従来の如き保護被膜に設けた場合にはダイレクト
ボンデングの効力を著しく阻害するものであり、本発明
はボンディングなどのＩＣ実装に最適の表面処理を実現
したものである。Therefore, if it is provided on a conventional protective film, it will significantly inhibit the effectiveness of direct bonding, and the present invention realizes a surface treatment that is optimal for IC mounting such as bonding.
次に本発明の実施例について説明する。Next, examples of the present invention will be described.
実施例（１）
Ｃｕ−０，１５８ｎ−０，０Ｉ Ｐ合金クーポンについ
て第１表に示す５種類の表面処理を行った後、室内に１
ケ月放置し、次いでフレオン１１３ の中に浸漬し３０
秒間超音波洗浄を行い、乾燥したクーポンを、プレート
温度１６０℃、ボンディング力４５ ｇｒ の超音波
ボンダーにて２５μφＡ、ｕ線を熔接した。この熔接し
たクーポン５０本について引張試験を行った。その結果
は第２表に示す通りである。Example (1) After performing the five types of surface treatments shown in Table 1 on a Cu-0,158n-0,0IP alloy coupon, one
Leave it for a few months, then soak it in Freon 113 for 30 minutes.
Ultrasonic cleaning was performed for seconds, and the dried coupons were welded with a 25 μφA, U-wire using an ultrasonic bonder with a plate temperature of 160° C. and a bonding force of 45 gr. A tensile test was conducted on 50 of these welded coupons. The results are shown in Table 2.
第１表
第 ２ 表
上表より明らかす如く本発明に、ｒ、！シばボンディン
グ強度は比較例品に比べて著しく侵れでおり、この値は
従来のＡｕ を１．２μメツキした表面へのボンディ
ング強度１２．３ ｇｒ （ｏ ＝０３ ）と遊色ない
ものであった。As is clear from the above table of Table 1, Table 2, the present invention has r,! The wrinkle bonding strength was significantly lower than that of the comparative example, and this value was 12.3 gr (o = 03), which was the same as the bonding strength to the conventional 1.2 μm Au plated surface, with no play of color. Ta.
又、上記の本発明品及び比較例品について表面の汚染酸
化防止と洗浄性との性能を試みるためにカソード還元法
による表面還元電気量を測定した。その結果は第３表に
示す通りである。Furthermore, in order to test the surface contamination oxidation prevention and cleanability of the above-mentioned products of the present invention and comparative products, the amount of surface reduction electricity was measured by a cathodic reduction method. The results are shown in Table 3.
第 ３ 表
なお、」二記１・１リ一ドフレーム品に適用した場合を
示したがこれに限らず素材となる板条体を処理しても有
効Ｃある。又、上記において１：ｒメッキを省略したが
Ａｕ 、 Ａｇ或はＳｎ 、 Ｎｉなどをメッキする場
合についても有効である。更に貸金、Ｆｉを節約するた
めにメッキ層を強くするとメッキ層が多孔質となり、銅
などの素地の酸化が起り易くなるが、かかる場合におい
ても本発明部材は有効に素地の酸化を防止する。Although Table 3 shows the case in which the method is applied to lead frame products in 1.1 of 2.2, it is also effective to treat plate strips that serve as raw materials. Further, although 1:r plating is omitted in the above, it is also effective when plating Au, Ag, Sn, Ni, etc. Furthermore, if the plating layer is strengthened in order to save money and Fi, the plating layer becomes porous and oxidation of the substrate such as copper is likely to occur, but even in such a case, the member of the present invention effectively prevents oxidation of the substrate.
以上詳述した如く本発明はボンディング等実装の際表面
が渭浄な状態にあるリードフレーム又はその中間体を得
る金属部材であり、ダイレクトボンディングを効果的に
行うことかできる等電子工業上顕著な効果を奏するもの
である。As described in detail above, the present invention is a metal member for obtaining a lead frame or its intermediate whose surface is in a clean state during bonding and other mounting, and is remarkable in the electronic industry, such as being able to perform direct bonding effectively. It is effective.
第１図はリードフレームの形状の１例を示す平面図、第
２図はチップの実装の１例を示す側面図である。
１・・マウンド部、２・ボンディング部、３・”外部端
子部、４・・テップ、５・・ボンティングワイヤー。FIG. 1 is a plan view showing an example of the shape of a lead frame, and FIG. 2 is a side view showing an example of chip mounting. 1. Mound part, 2. Bonding part, 3. External terminal part, 4. Tep, 5. Bonding wire.
Claims (1)
薄膜を設けたことを特徴とするリードフレーム用金属部
材０Metal member 0 for lead frame, characterized in that a thin film made of an aliphatic hydrocarbon compound having 10 or more carbon atoms is provided on the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58061177A JPH0770661B2 (en) | 1983-04-07 | 1983-04-07 | Metal member for lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58061177A JPH0770661B2 (en) | 1983-04-07 | 1983-04-07 | Metal member for lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59186354A true JPS59186354A (en) | 1984-10-23 |
| JPH0770661B2 JPH0770661B2 (en) | 1995-07-31 |
Family
ID=13163608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58061177A Expired - Lifetime JPH0770661B2 (en) | 1983-04-07 | 1983-04-07 | Metal member for lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770661B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5158068A (en) * | 1974-11-18 | 1976-05-21 | Hitachi Ltd | JUSHIFUSHIGATAHANDOTAISOCHI |
| JPS5562193A (en) * | 1978-10-27 | 1980-05-10 | Hitachi Cable Ltd | Partial plating method of blankded flat bar material |
-
1983
- 1983-04-07 JP JP58061177A patent/JPH0770661B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5158068A (en) * | 1974-11-18 | 1976-05-21 | Hitachi Ltd | JUSHIFUSHIGATAHANDOTAISOCHI |
| JPS5562193A (en) * | 1978-10-27 | 1980-05-10 | Hitachi Cable Ltd | Partial plating method of blankded flat bar material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0770661B2 (en) | 1995-07-31 |
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