JPS59185091A - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置Info
- Publication number
- JPS59185091A JPS59185091A JP59037512A JP3751284A JPS59185091A JP S59185091 A JPS59185091 A JP S59185091A JP 59037512 A JP59037512 A JP 59037512A JP 3751284 A JP3751284 A JP 3751284A JP S59185091 A JPS59185091 A JP S59185091A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- node
- write
- circuit
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59037512A JPS59185091A (ja) | 1984-02-29 | 1984-02-29 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59037512A JPS59185091A (ja) | 1984-02-29 | 1984-02-29 | 不揮発性半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3021081A Division JPS57143795A (en) | 1981-03-03 | 1981-03-03 | Nonvolatile semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59185091A true JPS59185091A (ja) | 1984-10-20 |
| JPS6224879B2 JPS6224879B2 (enExample) | 1987-05-30 |
Family
ID=12499588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59037512A Granted JPS59185091A (ja) | 1984-02-29 | 1984-02-29 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59185091A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318592A (ja) * | 1986-07-09 | 1988-01-26 | Toshiba Corp | 不揮発性半導体メモリ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183443A (enExample) * | 1974-12-09 | 1976-07-22 | Ncr Co |
-
1984
- 1984-02-29 JP JP59037512A patent/JPS59185091A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183443A (enExample) * | 1974-12-09 | 1976-07-22 | Ncr Co |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318592A (ja) * | 1986-07-09 | 1988-01-26 | Toshiba Corp | 不揮発性半導体メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6224879B2 (enExample) | 1987-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4597062A (en) | Non-volatile semiconductor memory system | |
| JP3417630B2 (ja) | 半導体集積回路装置とフラッシュメモリ及び不揮発性記憶装置 | |
| US4612462A (en) | Logic circuit having voltage booster | |
| US4967399A (en) | Erasable and programmable read-only memory system | |
| US5043858A (en) | High-voltage generating circuit having improved voltage boosting efficiency | |
| JP3098189B2 (ja) | 不揮発性半導体メモリのデータ読出回路 | |
| JP3586502B2 (ja) | 電圧発生回路 | |
| JPH08227586A (ja) | 集積回路メモリ装置 | |
| US4460985A (en) | Sense amplifier for MOS static memory array | |
| US5677643A (en) | Potential detecting circuit which suppresses the adverse effects and eliminates dependency of detected potential on power supply potential | |
| JPH02172099A (ja) | 半導体メモリ集積回路 | |
| JP2658916B2 (ja) | 半導体装置の電源切り換え回路 | |
| US4974206A (en) | Nonvolatile semiconductor memory device having reference potential generating circuit | |
| JPS6044748B2 (ja) | ダイナミツクmos記憶器に対する読出し増幅回路 | |
| US5815450A (en) | Semiconductor memory device | |
| JPH033317B2 (enExample) | ||
| US6760265B2 (en) | Read amplifier with a low current consumption differential output stage | |
| JPH0115958B2 (enExample) | ||
| JP2991546B2 (ja) | 半導体集積回路 | |
| US6956781B2 (en) | Amplifier and semiconductor storage device using the same | |
| KR0136894B1 (ko) | 반도체 메모리 장치의 버퍼 회로 | |
| US6122199A (en) | Semiconductor storage device | |
| JPS59185092A (ja) | 電圧切換回路 | |
| JPH04229655A (ja) | 不揮発性半導体記憶装置における消去方式 | |
| JPH02260299A (ja) | 不揮発性半導体記憶装置 |