JPS59176161U - Monolithic integrated circuit device - Google Patents
Monolithic integrated circuit deviceInfo
- Publication number
- JPS59176161U JPS59176161U JP7066983U JP7066983U JPS59176161U JP S59176161 U JPS59176161 U JP S59176161U JP 7066983 U JP7066983 U JP 7066983U JP 7066983 U JP7066983 U JP 7066983U JP S59176161 U JPS59176161 U JP S59176161U
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit device
- monolithic integrated
- pair
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１−ａ図、第１−ｂ図は本考案の一実施例を説明する
ための斜視図および断面図、第２−ａ図乃至第２−ｄ図
は実施例の素子を製造するための製法の一例を説明する
ための各工程断面図である。
第１−ａ、 ｌ−ｂ！２−ａ、 〜２−ｄ各図におい
て、１・・・・・・第１の対向電極、２・・・・・・誘
電体層、３・・間第２の対向電極、４．４′・・・・・
・シリコン酸化膜、５・・・・・・第１の対向電極用の
引き出し電極、６・・・・・・第２の対向電極用の引き
出し電極、７・・・・・・シリコン基板。Figures 1-a and 1-b are perspective views and sectional views for explaining one embodiment of the present invention, and Figures 2-a to 2-d are diagrams for manufacturing the device of the embodiment. It is each process cross-sectional view for demonstrating an example of a manufacturing method. Part 1-a, l-b! 2-a, to 2-d, in each figure, 1...first counter electrode, 2...dielectric layer, 3...second counter electrode, 4.4'・・・・・・
- Silicon oxide film, 5... Extracting electrode for first counter electrode, 6... Extracting electrode for second opposing electrode, 7... Silicon substrate.
Claims (1)
して、誘電体に接して設けられた一対の対向電極の境界
面が凹凸形状を呈している平行平板型コンデンサー素子
を用いたことを特徴とするモノリシック集積回路装置。A parallel plate type capacitor element in which the boundary surface of a pair of opposing electrodes provided in contact with a dielectric material has an uneven shape is used as an interstage coupling element for connecting adjacent microwave amplification circuits. monolithic integrated circuit device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7066983U JPS59176161U (en) | 1983-05-12 | 1983-05-12 | Monolithic integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7066983U JPS59176161U (en) | 1983-05-12 | 1983-05-12 | Monolithic integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59176161U true JPS59176161U (en) | 1984-11-24 |
Family
ID=30200819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7066983U Pending JPS59176161U (en) | 1983-05-12 | 1983-05-12 | Monolithic integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59176161U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244662A (en) * | 1987-03-30 | 1988-10-12 | Mitsubishi Electric Corp | Semiconductor device |
-
1983
- 1983-05-12 JP JP7066983U patent/JPS59176161U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244662A (en) * | 1987-03-30 | 1988-10-12 | Mitsubishi Electric Corp | Semiconductor device |
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