JPS59174544A - 半導体被覆用ガラス - Google Patents
半導体被覆用ガラスInfo
- Publication number
- JPS59174544A JPS59174544A JP5098383A JP5098383A JPS59174544A JP S59174544 A JPS59174544 A JP S59174544A JP 5098383 A JP5098383 A JP 5098383A JP 5098383 A JP5098383 A JP 5098383A JP S59174544 A JPS59174544 A JP S59174544A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- powder
- semiconductor
- coating
- becomes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000011248 coating agent Substances 0.000 title claims abstract description 15
- 238000000576 coating method Methods 0.000 title claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000945 filler Substances 0.000 claims abstract description 5
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052844 willemite Inorganic materials 0.000 claims description 2
- 229910052845 zircon Inorganic materials 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 abstract 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910020444 SiO2—PbO Inorganic materials 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 229910002451 CoOx Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Landscapes
- Glass Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5098383A JPS59174544A (ja) | 1983-03-25 | 1983-03-25 | 半導体被覆用ガラス |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5098383A JPS59174544A (ja) | 1983-03-25 | 1983-03-25 | 半導体被覆用ガラス |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59174544A true JPS59174544A (ja) | 1984-10-03 |
JPS638059B2 JPS638059B2 (enrdf_load_stackoverflow) | 1988-02-19 |
Family
ID=12874030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5098383A Granted JPS59174544A (ja) | 1983-03-25 | 1983-03-25 | 半導体被覆用ガラス |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59174544A (enrdf_load_stackoverflow) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60246642A (ja) * | 1984-01-18 | 1985-12-06 | ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ | 誘電体被膜の形成方法および半導体素子 |
US4733018A (en) * | 1986-10-02 | 1988-03-22 | Rca Corporation | Thick film copper conductor inks |
US4772574A (en) * | 1986-10-02 | 1988-09-20 | General Electric Company | Ceramic filled glass dielectrics |
US4788163A (en) * | 1987-08-20 | 1988-11-29 | General Electric Company | Devitrifying glass frits |
US4808673A (en) * | 1986-10-02 | 1989-02-28 | General Electric Company | Dielectric inks for multilayer copper circuits |
US4808770A (en) * | 1986-10-02 | 1989-02-28 | General Electric Company | Thick-film copper conductor inks |
US4810420A (en) * | 1986-10-02 | 1989-03-07 | General Electric Company | Thick film copper via-fill inks |
US4816615A (en) * | 1987-08-20 | 1989-03-28 | General Electric Company | Thick film copper conductor inks |
US4830988A (en) * | 1986-10-02 | 1989-05-16 | General Electric Company | Dielectric inks for multilayer copper circuits |
JP2012031048A (ja) * | 2010-07-01 | 2012-02-16 | Nippon Electric Glass Co Ltd | 無鉛半導体封入用ガラス |
US8163392B2 (en) | 2006-12-27 | 2012-04-24 | Schott Ag | Method for producing an electronic component passivated by lead free glass |
WO2013030922A1 (ja) * | 2011-08-29 | 2013-03-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
EP2717299A4 (en) * | 2011-05-26 | 2015-04-08 | Shindengen Electric Mfg | GLASS COMPOSITION FOR THE PROTECTION OF A SEMICONDUCTOR CONNECTION, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
JP2015214479A (ja) * | 2009-06-23 | 2015-12-03 | ショット・アーゲー | 鉛含有耐放射線ガラス及びその製造 |
-
1983
- 1983-03-25 JP JP5098383A patent/JPS59174544A/ja active Granted
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60246642A (ja) * | 1984-01-18 | 1985-12-06 | ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ | 誘電体被膜の形成方法および半導体素子 |
US4830988A (en) * | 1986-10-02 | 1989-05-16 | General Electric Company | Dielectric inks for multilayer copper circuits |
US4772574A (en) * | 1986-10-02 | 1988-09-20 | General Electric Company | Ceramic filled glass dielectrics |
US4808673A (en) * | 1986-10-02 | 1989-02-28 | General Electric Company | Dielectric inks for multilayer copper circuits |
US4808770A (en) * | 1986-10-02 | 1989-02-28 | General Electric Company | Thick-film copper conductor inks |
US4810420A (en) * | 1986-10-02 | 1989-03-07 | General Electric Company | Thick film copper via-fill inks |
US4733018A (en) * | 1986-10-02 | 1988-03-22 | Rca Corporation | Thick film copper conductor inks |
US4788163A (en) * | 1987-08-20 | 1988-11-29 | General Electric Company | Devitrifying glass frits |
US4816615A (en) * | 1987-08-20 | 1989-03-28 | General Electric Company | Thick film copper conductor inks |
US8163392B2 (en) | 2006-12-27 | 2012-04-24 | Schott Ag | Method for producing an electronic component passivated by lead free glass |
JP2015214479A (ja) * | 2009-06-23 | 2015-12-03 | ショット・アーゲー | 鉛含有耐放射線ガラス及びその製造 |
JP2018020959A (ja) * | 2009-06-23 | 2018-02-08 | ショット・アーゲー | 鉛含有耐放射線ガラス及びその製造 |
JP2012031048A (ja) * | 2010-07-01 | 2012-02-16 | Nippon Electric Glass Co Ltd | 無鉛半導体封入用ガラス |
US9230872B2 (en) | 2010-07-01 | 2016-01-05 | Nippon Electric Glass Co., Ltd. | Lead-free glass for semiconductor encapsulation |
EP2717299A4 (en) * | 2011-05-26 | 2015-04-08 | Shindengen Electric Mfg | GLASS COMPOSITION FOR THE PROTECTION OF A SEMICONDUCTOR CONNECTION, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
WO2013030922A1 (ja) * | 2011-08-29 | 2013-03-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
JP5548276B2 (ja) * | 2011-08-29 | 2014-07-16 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
US9006113B2 (en) | 2011-08-29 | 2015-04-14 | Shindengen Electric Manufacturing Co. Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS638059B2 (enrdf_load_stackoverflow) | 1988-02-19 |
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