JPS59172769A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS59172769A JPS59172769A JP58048161A JP4816183A JPS59172769A JP S59172769 A JPS59172769 A JP S59172769A JP 58048161 A JP58048161 A JP 58048161A JP 4816183 A JP4816183 A JP 4816183A JP S59172769 A JPS59172769 A JP S59172769A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- light
- light shielding
- alumina layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 11
- 239000002356 single layer Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は固体撮像装置、すなわち半導体装置による撮
像装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a solid-state imaging device, that is, an imaging device using a semiconductor device.
従来例によるこの種の固体撮像装置の概要構成を第１図
に示しである。すなわち、この第１図において、符号（
１）、および（２）は半導体基板のｐ層表面部に拡散形
成されたｎ領域からなるソース、およびドレイン、（３
）はそのゲートであって、これらによりフォトダイオー
ドを構成している。また（４）。FIG. 1 shows a general configuration of a conventional solid-state imaging device of this type. That is, in this FIG. 1, the symbol (
1) and (2) are a source and drain made of an n region diffused into the surface of the p layer of a semiconductor substrate, and (3)
) is its gate, which constitutes a photodiode. Also (4).
および（５）は前記半導体基板のｐ コンタクト領域お
よびｎ＋コンタクトとしての金蒸着膜、（６）は前記ド
レイン、ｐ＋コンタクトの各領域上に設けられるアルミ
ニウムからなる一層配線、（７）はその間のｐ濃度が高
くて湿気に弱いＳｉｎｇなどのスムースコート膜、（８
）はこれらの上に素子全体に亘って形成された５Ｌ（ｈ
などの絶縁膜、（９）はこの絶縁膜（８）上に受光部を
除いて設けられるアルミニウムからなる遮光膜であり、
さらにこれらの上には一般に平坦化膜、耐湿膜を兼ねる
保護膜と、周知のカラーフィルタが配設される。and (5) is a gold vapor deposited film as the p contact region and n+ contact of the semiconductor substrate, (6) is a single layer wiring made of aluminum provided on each of the drain and p+ contact regions, and (7) is the p-contact layer between them. Smooth coat film such as Sing, which has a high concentration and is weak against moisture, (8
) is formed over the entire element 5L (h
Insulating film (9) is a light shielding film made of aluminum provided on this insulating film (8) excluding the light receiving part,
Furthermore, a protective film that generally serves as a flattening film and a moisture-proof film, and a well-known color filter are disposed on these.
しかしてこの従来例での固体撮像装置の場合、カラーフ
ィルタにより選択されて保護膜を通過した特定波長の光
ｈνは、遮光膜（９）間の受光部よシ絶縁膜（８）およ
びスムースコート膜（７）を順次に経てフォトダイオー
ドを構成しているソース（１）に達し、光電効果により
特定波長の光ｈνとしての電気信号に変換されるのであ
るが、一方、この従来例の構成にあっては、素子全体が
絶縁膜（８）によって被覆され、その上にアルミニウム
からなる遮光膜（９）を形成しているので、絶縁膜（８
）での光の回折現象と遮光膜（９）による光の乱反射と
によって、色違いのカラーフィルタを通過してきた光ｈ
ν′がフォトダイオードの′ソース（１）に迷い込んで
きて分光感度特性が悪くなムまたその光がドレイン（２
）Ｋ達して、いわゆるスミア現象を惹き起すなどの不都
合があった〇
〔発明の概要〕
この発明は従来例でのこの↓うな欠点に鑑み、アルミニ
ウムからなる一層配線の表面を酸化させてアルミナ層を
形成させ、かつこのアルミナ層上にアルミニウムからな
る遮光膜を直接形成させることによシ、この一層配線と
遮光膜間の間隙をなくシ、これによって分光感度特性の
改善とスミア現象対策とをなし得るようにしたものであ
る。However, in the case of this conventional solid-state imaging device, the light hv of a specific wavelength selected by the color filter and passed through the protective film is transmitted between the light-receiving area between the light shielding film (9), the insulating film (8) and the smooth coat. It passes through the film (7) sequentially and reaches the source (1) that constitutes the photodiode, where it is converted into an electrical signal as light hν of a specific wavelength by the photoelectric effect. In this case, the entire element is covered with an insulating film (8), and a light-shielding film (9) made of aluminum is formed on top of the insulating film (8).
) and the diffused reflection of light by the light-shielding film (9), the light h that has passed through the different color filters.
ν' strays into the photodiode's source (1), causing poor spectral sensitivity characteristics.
)K, which caused the so-called smear phenomenon. [Summary of the Invention] In view of the above disadvantages of the conventional example, this invention oxidizes the surface of a single layer wiring made of aluminum to form an alumina layer. By forming a light-shielding film made of aluminum directly on this alumina layer, the gap between the layered wiring and the light-shielding film can be eliminated, thereby improving the spectral sensitivity characteristics and preventing the smear phenomenon. It was made possible to do so.
以下、この発明に係る固体撮像装置の一実施例につき、
第２図を参照して詳細に説明する。Hereinafter, an embodiment of the solid-state imaging device according to the present invention will be described.
This will be explained in detail with reference to FIG.
この第２図実施例において前記第１図従来例と同一符号
は同一または相当部分を示しており、この実施例では、
前記アルミニウムからなる一層配線（６）の表面を酸素
雰囲気中にさらして酸化させ、これによって絶縁体であ
るアルミナ（Ａｋ Ｏｓ ）層（１０）を形成させたの
ち、その上に受光部を除いて前記と同様にアルミニウム
からなる遮光膜（９）を形成させ、かつこの遮光膜（９
）間、すなわち受光部に前記スムースコート膜（１）を
湿気から防護するためのＳ ｔ Ｏ，などの絶縁膜（８
）を配したものである。こ＼で前記アルミナ層（１０）
は、重ね合わせた形成により間隙のなくなった一層配線
（６）と遮光膜（９）間にあって、この両者を絶縁する
ために設けられており、その膜厚はせいぜい０−１７’
ｍ程度あればよいＯ
従ってこの実施例構成の場合に杜、一層配線と遮光膜と
がアルミナ層で実質的に絶縁一体化されるから、カラー
フィルタを通過した特定波長の光ｈνは、従来例構成で
のように絶縁膜内をさまよって、別の７オトタ゛イオー
ドに迷い込んだり、ドレインに侵入するような不都合が
解消さ扛るのである。In this embodiment in FIG. 2, the same reference numerals as in the conventional example in FIG. 1 indicate the same or corresponding parts, and in this embodiment,
The surface of the single-layer wiring (6) made of aluminum is exposed to an oxygen atmosphere to oxidize, thereby forming an alumina (Ak Os ) layer (10) which is an insulator, and then a layer (10) of alumina (Ak Os ), which is an insulator, is formed thereon, except for the light-receiving part. A light shielding film (9) made of aluminum is formed in the same manner as above, and this light shielding film (9) is
), that is, in the light receiving area, an insulating film (8
). Here, the alumina layer (10)
is located between the single-layer wiring (6) and the light-shielding film (9), which have no gaps due to overlapping formation, and is provided to insulate the two, and the film thickness is at most 0-17'.
Therefore, in the case of this embodiment, since the wiring and the light-shielding film are substantially insulated and integrated with the alumina layer, the light hν of a specific wavelength passing through the color filter is smaller than that of the conventional example. This eliminates the inconvenience of the diode wandering inside the insulating film and getting into another 7 output diode or entering the drain, as in the case of the structure.
なお前記実施例はいわゆるＭＯＳ型の固体撮像装置につ
いて述べたが、この発明はその他すべての固体撮像装置
にも適用できるものである。Although the above embodiments have been described with respect to a so-called MOS type solid-state imaging device, the present invention can also be applied to all other solid-state imaging devices.
以上詳述したようにこの発明装置によれば、アルミニウ
ムからなる一層配線の表面を酸化させてアルミナ層を形
成させ、かつこのアルミナ層上にアルミニウムからなる
遮光膜を直接形成させたから、これらの一層配線と遮光
膜とがアルミナ層で実質的に絶縁一体化さ扛ることにな
り、受光部から受入れられた光が別のダイオードに迷い
込んだシ、ドレインに侵入し７’Ｃシせず、分光感度特
性の改善、向上をなし得られ、スミア現象を阻止できる
などの特長がある。As detailed above, according to the device of the present invention, the surface of a single-layer wiring made of aluminum is oxidized to form an alumina layer, and a light-shielding film made of aluminum is directly formed on this alumina layer. The wiring and the light-shielding film are essentially insulated and integrated with the alumina layer, and the light received from the light receiving part strays into another diode, enters the drain, and is not 7'C-shielded. It has features such as improved sensitivity characteristics and the ability to prevent smear phenomena.
第１図は従来例による固体撮像装置の概要構成を示す断
面図、第２図はこの発明の一実施例による固体撮像装置
の概要構成を示す断面図である。
（１）・・・・ソース、（２）・・・・トレイン、（３
）・・・・ゲート、（６）・・曽・アルミニウムからな
る一Ｍ配線、（７）・・・・スムースコー）Ｊ［ｌ（、
（８）・・・・絶縁膜、（９）・・・・アルミニウムか
らなる遮光膜、（ｉｏ）・・・・アルミナ層。
代理人 葛 野 信 −FIG. 1 is a sectional view showing the general structure of a solid-state imaging device according to a conventional example, and FIG. 2 is a sectional view showing the general structure of a solid-state imaging device according to an embodiment of the present invention. (1)...Source, (2)...Train, (3
)...gate, (6)...1M wiring made of aluminum, (7)...smoothcoo)J[l(,
(8)... Insulating film, (9)... Light shielding film made of aluminum, (io)... Alumina layer. Agent Shin Kuzuno −
Claims (1)
らなる一層配線の表面を酸化させてアルミナ層を形成さ
せると共に、このアルミナ層上にアルミニウムからなる
遮光膜を直接形成させたことを特徴とする固体撮像装置
。A solid-state imaging device characterized in that, in the manufacturing process of the solid-state imaging device, the surface of a single-layer wiring made of aluminum is oxidized to form an alumina layer, and a light-shielding film made of aluminum is directly formed on the alumina layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58048161A JPS59172769A (en) | 1983-03-22 | 1983-03-22 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58048161A JPS59172769A (en) | 1983-03-22 | 1983-03-22 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59172769A true JPS59172769A (en) | 1984-09-29 |
Family
ID=12795655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58048161A Pending JPS59172769A (en) | 1983-03-22 | 1983-03-22 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59172769A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6278765U (en) * | 1985-11-05 | 1987-05-20 |
-
1983
- 1983-03-22 JP JP58048161A patent/JPS59172769A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6278765U (en) * | 1985-11-05 | 1987-05-20 |
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