JPS59172766A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS59172766A JPS59172766A JP58048158A JP4815883A JPS59172766A JP S59172766 A JPS59172766 A JP S59172766A JP 58048158 A JP58048158 A JP 58048158A JP 4815883 A JP4815883 A JP 4815883A JP S59172766 A JPS59172766 A JP S59172766A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- insulation
- solid
- color filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は固体撮像装置、すなわち半導体装置による撮
像装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a solid-state imaging device, that is, an imaging device using a semiconductor device.
従来例によるこの種の固体撮像装置の概要構成を第１図
に示しである。すなわち、この第１図において、符号（
１）、および（２）は半導体基板のｐ層表面部に拡散形
成されたｎｆＡ斌からなるソース、およびドレイン、（
３）はそのゲートであって、これらによりフォトダイオ
ードを構成している。また（４）。FIG. 1 shows a general configuration of a conventional solid-state imaging device of this type. That is, in this FIG. 1, the symbol (
1) and (2) are a source and a drain made of nfA holes diffused on the surface of the p-layer of the semiconductor substrate, (
3) is its gate, which constitutes a photodiode. Also (4).
および（５）は前記半導体基板のｐ＋コンタクト領域、
およびｎ＋コンタクトとしての金蒸着膜、（６）は前記
ドレイン、ｐ＋コンタクトの各領域上に設けられるアル
ミニウム碌どの一層配線、（７）Ｕその間のｐ濃度の高
いＳｉｏ２ などのスムースコート膜、（８）はこれら
の上に素子全体に亘って形成された５ｔｏ２ などの絶
縁膜、（９）は受光部を除いて設けられるアルミニウム
などの遮光膜、（１０）はその上に形成されて平坦化膜
、耐湿膜を兼ねる保護膜であり、この保護膜（１０）上
には周知のようにカラーフィルタが配設される。and (5) is a p+ contact region of the semiconductor substrate;
and a gold evaporated film as an n+ contact, (6) a single layer wiring made of aluminum provided on each region of the drain and p+ contact, (7) a smooth coat film such as Sio2 with a high p concentration between the U and (8) ) is an insulating film such as 5to2 formed over the entire element, (9) is a light-shielding film such as aluminum provided except for the light receiving part, and (10) is a flattening film formed thereon. This is a protective film that also serves as a moisture-resistant film, and a color filter is disposed on this protective film (10) as is well known.
しかしてこの従来例での固体撮像装置の場合、カラーフ
ィルタを通過した特定波長の光ｈνは、保護膜（１０）
を通シ遮光膜（９）間の受光部から、絶縁膜（８）およ
びスムースコート膜（１）を順次に経て、フォトダイオ
ードを構成しているソース（１）に達し、光電効果によ
シ特定波長の光ｈνとしての電気信号に変換されるので
あるが、一方、この従来例構成にあっては、素子全体を
絶縁膜（８）によって被覆し、かつその上に遮光膜（９
）を形成しているために、例えば該当カラーフィルタ以
外のフィルタ、すなわち色違いのカラーフィルタを通過
してきた別の光ｈνが、ソース（１）に迷い込み易くな
って分光感度特性が悪くなシ、また光の回折現象によシ
これらの光ｈν、ｈν′がドレイン（２）に達して、い
わゆるスミア現象を惹き起す慣れがあるなどの不都合を
きたすものであった。However, in the case of this conventional solid-state imaging device, the light hv of a specific wavelength that has passed through the color filter is transmitted through the protective film (10).
From the light-receiving part between the light-shielding films (9), passing through the insulating film (8) and the smooth coat film (1) sequentially, it reaches the source (1) constituting the photodiode, where it is shielded by the photoelectric effect. On the other hand, in this conventional configuration, the entire element is covered with an insulating film (8), and a light shielding film (9) is placed on top of the insulating film (8).
), for example, another light hν that has passed through a filter other than the corresponding color filter, that is, a color filter of a different color, can easily stray into the source (1), resulting in poor spectral sensitivity characteristics. Moreover, due to the phenomenon of light diffraction, these lights hv and hv' reach the drain (2), causing a problem such as a so-called smear phenomenon.
この発明は従来例でのこのような欠点に鑑み、素子全体
に施されていた絶縁膜をなくシ、一層配線の表面にのみ
絶縁膜を形成して、その上に遮光膜を設けることにより
、分光感度特性の改善とスミア現象対策とをなし得るよ
うにしたものである。In view of these drawbacks in the conventional example, this invention eliminates the insulating film that was applied to the entire element, forms an insulating film only on the surface of the wiring, and provides a light shielding film on top of it. This makes it possible to improve the spectral sensitivity characteristics and take measures against the smear phenomenon.
以下、この発明に係る固体撮像装置の一実施例゛につき
、第２図を参照して詳細に説明する。Hereinafter, one embodiment of the solid-state imaging device according to the present invention will be described in detail with reference to FIG.
この第２図実施例において前記第１図従来例と同一符号
は同一または相自部分を示してお夕、この実施例では、
前記一層配線（６）に該当するところの、それぞ扛にア
ルミニウムなどを用いた一層配線（１１）を被覆する範
囲にアルミナ、酸化クロムなどによる絶縁膜（１２）を
形成させると共に、この絶縁膜（１２）上を含み、受光
部を除いてアルミニウム、クロムなどの遮光膜（１３）
を設け、さらにその上に平坦化膜、耐湿膜を兼ねる保護
膜（１４）を形成させ、かつこの保護膜（１４）上に周
知のようにカラーフィルタを配設するものである。In this embodiment of FIG. 2, the same reference numerals as in the conventional example of FIG. 1 indicate the same or similar parts.
An insulating film (12) made of alumina, chromium oxide, etc. is formed in a range covering the single-layer wiring (11), which corresponds to the single-layer wiring (6) and is made of aluminum or the like, and this insulating film (12) Light-shielding film made of aluminum, chrome, etc., including the top and excluding the light receiving part (13)
A protective film (14) serving as a flattening film and a moisture-proof film is further formed thereon, and a color filter is disposed on this protective film (14) as is well known.
従ってこの実施例構成の場合は、カラーフィルタを通過
した特定波長の光ｈνが、従来例構成でのように絶縁膜
内をさまよって、別のフォトダイオードに迷い込み、そ
のソースあるいはドレインに侵入することが解消される
と共に、受光部にあっては従来設けられていた絶縁膜そ
のものがなくなるために、同受光部上の膜厚が薄くなっ
て、それだけ光の通過、換言すると受光量が多くなるの
である。Therefore, in the case of this embodiment configuration, the light hν of a specific wavelength that has passed through the color filter wanders within the insulating film, strays into another photodiode, and enters its source or drain, as in the conventional configuration. At the same time, since the insulating film that was conventionally provided on the light receiving section is no longer present, the thickness of the film on the light receiving section becomes thinner, which increases the amount of light that passes through it, or in other words, the amount of light that is received. It is.
なお前記実施例はいわゆるＭＯＳ型の固体撮像装置につ
いて述べたが、この発明はその他すべての固体撮像装置
にも適用できるものである。Although the above embodiments have been described with respect to a so-called MOS type solid-state imaging device, the present invention can also be applied to all other solid-state imaging devices.
以上詳述したようにこの発明装置によれば、従来例装置
にあって素子全体に施されていた絶縁膜全除去して、一
層配線の表面にのみ絶縁膜を形成させ、かつこの絶縁膜
を含み、受光部を除いて遮光膜を設けるようにしたので
、受光部から受入れられた光が別のフォトダイオードに
迷い込み、そのソースあるいはドレインに侵入したシす
ることがなくなり、しかも受光部上での膜厚を薄くし得
て受光量を多くできて、分光感度特性の改善、向上が可
能となり、併せてスミア現象を阻止できるなどの特長が
ある。As described in detail above, according to the device of the present invention, the insulating film that was applied to the entire element in the conventional device is completely removed, and the insulating film is formed only on the surface of one layer of wiring, and this insulating film is removed. Since the light-shielding film is provided except for the light-receiving part, the light received from the light-receiving part will not stray into another photodiode and enter its source or drain. The film thickness can be reduced, the amount of light received can be increased, the spectral sensitivity characteristics can be improved and improved, and smear phenomenon can be prevented.
第１図は従来例による固体撮像装置の概要構成を示す断
面図、第２図はこの発明の一実例による゛固体撮像装置
の概要構成を示す断面図である。
（１）・・・・ソース、（２）・・・・ドＬ／（ン、（
３）・・・・ゲート、（６） 、 （１１） ・・・
・層配線、（７）・・・・スムースコート膜、（１２）
・・・・絶縁膜、（１３）・・・・遮光膜、（１４）・
・・・保護膜。
代理人 葛 野 信 −FIG. 1 is a sectional view showing the general structure of a solid-state imaging device according to a conventional example, and FIG. 2 is a sectional view showing the general structure of a solid-state imaging device according to an example of the present invention. (1)...Sauce, (2)...DoL/(n,(
3)...Gate, (6), (11)...
・Layer wiring, (7)...Smooth coat film, (12)
... Insulating film, (13) ... Light shielding film, (14) ...
···Protective film. Agent Shin Kuzuno −
Claims (1)
にのみ絶縁膜を形成させ、かつこの絶縁膜を含み、受光
部を除いて遮光膜を設け、さらにこ扛らの上に平坦化膜
、耐湿膜としての保護膜を形成したことを特徴とする固
体撮像装置。In the manufacturing process of solid-state imaging devices, an insulating film is formed only on the surface of one layer of wiring, and a light-shielding film is provided on the area including this insulating film, except for the light-receiving part, and a flattening film and a moisture-resistant film are added on top of this. A solid-state imaging device characterized in that a protective film is formed as a protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58048158A JPS59172766A (en) | 1983-03-22 | 1983-03-22 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58048158A JPS59172766A (en) | 1983-03-22 | 1983-03-22 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59172766A true JPS59172766A (en) | 1984-09-29 |
Family
ID=12795565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58048158A Pending JPS59172766A (en) | 1983-03-22 | 1983-03-22 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59172766A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06215776A (en) * | 1993-01-20 | 1994-08-05 | Japan Storage Battery Co Ltd | Sea water battery |
-
1983
- 1983-03-22 JP JP58048158A patent/JPS59172766A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06215776A (en) * | 1993-01-20 | 1994-08-05 | Japan Storage Battery Co Ltd | Sea water battery |
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