JPS5917242A - Quartz glass for manufacturing semiconductor - Google Patents
Quartz glass for manufacturing semiconductorInfo
- Publication number
- JPS5917242A JPS5917242A JP12604382A JP12604382A JPS5917242A JP S5917242 A JPS5917242 A JP S5917242A JP 12604382 A JP12604382 A JP 12604382A JP 12604382 A JP12604382 A JP 12604382A JP S5917242 A JPS5917242 A JP S5917242A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- layer
- core pipe
- melting method
- laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
Description
【発明の詳細な説明】
この発明は、半導体全製造する場合に使用される石英ガ
ラスの改良にかかるものである。石英ガラスは耐熱性、
低熱膨張、高純度、等々すぐれた特性を有し、特に半導
体分野には広く利用すれている。この石英ガラスも製法
によって特性上の差が生じ、それぞれの特性に応じて使
い分けられている。例えば、天然石英を火焔溶融したも
のは、気泡、OH基及び不純物が多く、特に高純度全要
求するMO8用イシには使用できない。火焔溶融しπも
のはOH基が多くなり易く、OH基は石英ガラスの粘性
に大きな影響ケ与えるため、高温、ろるいは大型等の荷
重のかかる用途には使用できない。珪素化合物を熱分解
したものは、高純度品が得られるがOH基が多く、大型
の炉芯管には不向である。このように種々の原料及び製
法によって石英ガラスの特性に差が生じ、それぞれの特
性に応じて使い分けられているが、要求される条件をす
べて満足しているわけではない。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the improvement of quartz glass used in the complete manufacture of semiconductors. Quartz glass is heat resistant,
It has excellent properties such as low thermal expansion and high purity, and is widely used, especially in the semiconductor field. This quartz glass also has different characteristics depending on the manufacturing method, and is used differently depending on its characteristics. For example, flame-fused natural quartz has many bubbles, OH groups, and impurities, and cannot be used particularly for MO8 stones that require high purity. Flame-melted π materials tend to have a large number of OH groups, and OH groups have a large effect on the viscosity of quartz glass, so they cannot be used in high-temperature applications that require heavy loads, such as glass or large glass. Although high-purity products can be obtained by thermally decomposing silicon compounds, they contain many OH groups and are unsuitable for large-sized furnace tubes. As described above, there are differences in the properties of quartz glass depending on the various raw materials and manufacturing methods, and although quartz glass is used depending on its properties, it does not necessarily satisfy all the required conditions.
本願発明者らは、かかる状況全勘案し、それぞれの特性
を生かしつつその欠点が補えるような石英ガラスについ
て研究し、この発明を完成させたものでβる。The inventors of the present application took all of these circumstances into account, researched quartz glass that could compensate for its drawbacks while taking advantage of its respective characteristics, and completed the present invention.
すなわち、半導体製造用石英ガラスにおいて高純度を要
求される内面は、熱分解して生成した石英ガラスとし、
外面は多泡石英ガラスとしたものである。外面全多泡の
石英ガラスとしたものは、例えばシリコン引上用ルツボ
においても、あるいは拡散炉用炉芯管においても周囲か
ら加熱されるが、透明な石英ガラスでは熱源の温度ムシ
がそのまま加熱ムシとなシ易いので、気泡全台む石英ガ
ラス全使用することによって、熱エネルギーを分散させ
、熱源に多少の温度ムラがろっても均熱加熱が可能とな
るようにしたものである。この場合、中間層に真空溶融
した石英ガラス全使用すれば粘、性が高いため高温で使
用しても変形することが少なくzb好ましい。In other words, the inner surface of quartz glass for semiconductor manufacturing, which requires high purity, is made of quartz glass produced by thermal decomposition.
The outer surface is made of porous quartz glass. Quartz glass with a fully porous outer surface is heated from the surroundings, for example in a crucible for silicon pulling or in a furnace core tube for a diffusion furnace, but with transparent quartz glass, the temperature difference of the heat source is directly affected by the heating problem. Since it is easy to heat, by using all the quartz glass with bubbles, the thermal energy is dispersed and uniform heating is possible even if the temperature of the heat source is slightly uneven. In this case, it is preferable to use vacuum-fused silica glass for the intermediate layer because it has high viscosity and properties and is less likely to deform even when used at high temperatures.
このような石英ガラス金製造するには、必要な肉厚全盲
する石英ガラス素体全積層し、その一端を封じておいて
他端から減圧し、外面から加熱することによって外層一
体のものとすることられる。To manufacture such quartz glass gold, all quartz glass elements with the required wall thickness are laminated, one end of which is sealed, pressure is reduced from the other end, and the outer layer is heated from the outside to form an integral outer layer. It will be destroyed.
実施例
内層を四塩化珪素を熱分解して生成した石英ガラスとし
、中間層全真空電気溶融した石英ガラス、外層を原料粉
全回転溶融法で生成した多泡石英ガラスとし、これら三
層の管状積層体の一端を封看し、他端から真空ポンプで
吸引しつつ酸水素バーナーで周囲から加熱し、三者k
一体のものとした。これを更に加熱しつつ引き伸して拡
散炉用炉芯管を得た。EXAMPLE The inner layer is quartz glass produced by thermally decomposing silicon tetrachloride, the middle layer is quartz glass melted by full-vacuum electricity, and the outer layer is multifoamed quartz glass produced by full-rotation melting of raw material powder. One end of the laminate is sealed, and the other end is heated with an oxyhydrogen burner while suction is applied with a vacuum pump.
It was made into one thing. This was further heated and stretched to obtain a furnace core tube for a diffusion furnace.
このものの寸法は内径130u、外径14611、長さ
2.Out)msで、各層は内層が2Ils、中間層が
48、外層が2訃でめった。このもの會同−寸法の真空
電気溶融法で得た炉芯管と比較してMO8用シリコンウ
ェーハの拡散処理に使用し友ところ、本願発明のものは
何ら欠陥のないものでめったのに対し、真空電気溶融法
のものは半導体特性に極端なバラツキが見られ、使用不
能であることが証明された。The dimensions of this item are inner diameter 130u, outer diameter 14611, and length 2. Out) ms, each layer had 2 Ils for the inner layer, 48 for the middle layer, and 2 Ils for the outer layer. When compared with a furnace core tube obtained by the vacuum electric melting method of the same size and used for the diffusion treatment of silicon wafers for MO8, the one of the present invention rarely had any defects; The electric melting method showed extreme variations in semiconductor properties and was proven to be unusable.
なお、この発明の実施例においては三層のもので比較し
たが、シリコン単結晶引上用には必ずしも三層を必要と
せず、それぞれ要求される特性に応じて適応させてもよ
い。In the embodiments of the present invention, a three-layer structure was compared, but three layers are not necessarily required for pulling silicon single crystals, and may be adapted depending on the required characteristics.
あるいは多泡石英ガラス管内面に、また、この発明の石
英ガラスを発光管に使用しても単一構造のものには見ら
nない特性全発揮することが明らかとなった。Alternatively, it has become clear that even when the quartz glass of the present invention is used on the inner surface of a multicellular quartz glass tube or in an arc tube, it exhibits all the characteristics that are not found in those of a single structure.
Claims (1)
からなシ、かつ外面が多泡石英ガラス層から成ること全
特徴とする半導体製造用石英ガラス。1. A quartz glass for semiconductor manufacturing, characterized in that at least the inner surface is made of a quartz glass layer produced by thermal decomposition, and the outer surface is made of a multicellular quartz glass layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12604382A JPS5917242A (en) | 1982-07-20 | 1982-07-20 | Quartz glass for manufacturing semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12604382A JPS5917242A (en) | 1982-07-20 | 1982-07-20 | Quartz glass for manufacturing semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5917242A true JPS5917242A (en) | 1984-01-28 |
Family
ID=14925239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12604382A Pending JPS5917242A (en) | 1982-07-20 | 1982-07-20 | Quartz glass for manufacturing semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5917242A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6214722U (en) * | 1985-07-12 | 1987-01-29 | ||
JPS62268129A (en) * | 1986-05-16 | 1987-11-20 | Shinetsu Sekiei Kk | Quartz glass-made jig |
JPH0384922A (en) * | 1989-08-29 | 1991-04-10 | Shinetsu Sekiei Kk | Quartz glass tube for heat treatment of semiconductor |
US6841210B2 (en) * | 2000-05-31 | 2005-01-11 | Heraeus Quarzglas Gmbh & Co., Kg | Multilayer structured quartz glass crucible and method for producing the same |
-
1982
- 1982-07-20 JP JP12604382A patent/JPS5917242A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6214722U (en) * | 1985-07-12 | 1987-01-29 | ||
JPS62268129A (en) * | 1986-05-16 | 1987-11-20 | Shinetsu Sekiei Kk | Quartz glass-made jig |
JPH0384922A (en) * | 1989-08-29 | 1991-04-10 | Shinetsu Sekiei Kk | Quartz glass tube for heat treatment of semiconductor |
US6841210B2 (en) * | 2000-05-31 | 2005-01-11 | Heraeus Quarzglas Gmbh & Co., Kg | Multilayer structured quartz glass crucible and method for producing the same |
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