JP2002003229A - Quartz glass product used for semiconductor producing device - Google Patents

Quartz glass product used for semiconductor producing device

Info

Publication number
JP2002003229A
JP2002003229A JP2000180323A JP2000180323A JP2002003229A JP 2002003229 A JP2002003229 A JP 2002003229A JP 2000180323 A JP2000180323 A JP 2000180323A JP 2000180323 A JP2000180323 A JP 2000180323A JP 2002003229 A JP2002003229 A JP 2002003229A
Authority
JP
Japan
Prior art keywords
quartz glass
glass member
product
semiconductor manufacturing
glass product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000180323A
Other languages
Japanese (ja)
Inventor
Shigeru Yamamura
茂 山村
Eiichi Sotodani
栄一 外谷
Tomio Kin
富雄 金
Tomohiro Nagata
智浩 永田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP2000180323A priority Critical patent/JP2002003229A/en
Publication of JP2002003229A publication Critical patent/JP2002003229A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00Re-forming shaped glass
    • C03B23/20Uniting glass pieces by fusing without substantial reshaping
    • C03B23/207Uniting glass rods, glass tubes, or hollow glassware
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00Re-forming shaped glass
    • C03B23/20Uniting glass pieces by fusing without substantial reshaping
    • C03B23/203Uniting glass sheets

Abstract

PROBLEM TO BE SOLVED: To provide a quartz glass product which has an excellent temperature following property in heating, cooling, etc., is able to suppress increase in process time of a heat treatment, and is used for a semiconductor producing device. SOLUTION: There are provided a 1st quartz glass member 2b having a face in which grooves 4 are formed and a 2nd quartz glass member 2a which closes the above grooves by being stuck to the groove-formed face of the 1st quartz glass member, the grooves 4 being transformed into paths 3. So a heating fluid or a cooling fluid for promoting temperature rising/lowering is made to flow through the paths 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体製造装置に
用いられる石英ガラス製品に関し、より詳細には、加熱
及び冷却等の温度追随性に優れた半導体製造装置に用い
られる石英ガラス製品に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz glass product used in a semiconductor manufacturing apparatus, and more particularly, to a quartz glass product used in a semiconductor manufacturing apparatus having excellent temperature followability such as heating and cooling.

【0002】[0002]

【従来の技術】半導体製造プロセスにおいて、シリコン
ウエハ等に種々の熱処理が施される。これらの熱処理に
は拡散炉等の熱処理炉が使用され、炉芯管やチャンバ
ー、炉内断熱部等には高純度の石英ガラス製品が使用さ
れている。また、熱処理の対象である半導体ウエハの収
納や搬送にはウエハボート等のウエハ積載製品が使用さ
れるが、これらの治具は高純度石英ガラス製のものが多
く使用されている。上記半導体ウエハの熱処理は、ウエ
ハ表面にSiO2 、Si34 、ポリシリコン、BPS
G(SiO2 にB及びPを数%添加したもの)等の薄膜
を形成するために、またウエハ表面を安定化させるアニ
ール処理等ために、実施される。この熱処理温度は、例
えば400〜1000℃の高温で行われる。
2. Description of the Related Art In a semiconductor manufacturing process, a silicon wafer or the like is subjected to various heat treatments. A heat treatment furnace such as a diffusion furnace is used for these heat treatments, and a high-purity quartz glass product is used for a furnace core tube, a chamber, a heat insulating portion in the furnace, and the like. In addition, wafer loaded products such as wafer boats are used for storing and transporting semiconductor wafers to be subjected to heat treatment, and these jigs are often made of high-purity quartz glass. In the heat treatment of the semiconductor wafer, SiO 2 , Si 3 N 4 , polysilicon, BPS
This process is performed to form a thin film such as G (SiO 2 to which B and P are added by several%), and to perform an annealing process for stabilizing the wafer surface. This heat treatment is performed at a high temperature of, for example, 400 to 1000 ° C.

【0003】[0003]

【発明が解決しようとする課題】ところで、石英ガラス
は、軟化点が1500℃以上と高く、熱膨張係数が小さ
く、1000℃以上の高温でもほとんど変形しないこ
と、高純度のものが比較的容易に得られ、特に金属不純
物が少ないこと、耐薬品性に優れること等の優れた特性
を有する。この特性からすれば、前記熱処理炉等の半導
体製造用装置に用いられる製品の構成材料として適して
いる。一方、石英ガラスは、比熱が890〜1140J
/kg・K(20〜1000℃)と大きく、熱伝導率が
1.5〜3.0W/mK(10〜1000℃)と低いた
めに熱し難く冷め難いという特性を持っている。また、
赤外線透過率が95%以上のため、ランプ加熱やヒータ
加熱のように高温の輻射による熱伝達の寄与度が大きい
場合は、被処理物や炉体は加熱されて昇温しても石英ガ
ラス自体は輻射熱を透過させてしまうため加熱され難
い。そのため、石英ガラスを半導体製造装置用製品とし
て用いる場合、該製品が熱を吸収、あるいは放出するた
め、炉内の昇降温が遅くなり、それによりプロセスタイ
ムの増加を招くという技術的課題があった。
By the way, quartz glass has a high softening point of 1500 ° C. or higher, has a small coefficient of thermal expansion, is hardly deformed even at a high temperature of 1000 ° C. or higher, and has a relatively high purity. It has excellent properties, such as low metal impurities and excellent chemical resistance. From these characteristics, it is suitable as a constituent material of a product used in a semiconductor manufacturing apparatus such as the heat treatment furnace. On the other hand, quartz glass has a specific heat of 890 to 1140 J
/ Kg · K (20-1000 ° C) and low thermal conductivity of 1.5-3.0 W / mK (10-1000 ° C), which makes it difficult to heat and cool. Also,
Because the infrared transmittance is 95% or more, if the contribution of heat transfer by high-temperature radiation is large, such as lamp heating or heater heating, the quartz glass itself will be heated even if the workpiece and furnace body are heated and heated. Is difficult to be heated because it transmits radiant heat. Therefore, when quartz glass is used as a product for a semiconductor manufacturing device, there is a technical problem that the product absorbs or emits heat, so that the temperature rise and fall in the furnace is delayed, thereby increasing the process time. .

【0004】本発明は、半導体製造装置に用いられ、当
該装置における加熱及び冷却等の温度追随性を向上さ
せ、熱処理のプロセスタイムの増加を抑制することがで
きる石英ガラス製品を提供することを目的とする。
An object of the present invention is to provide a quartz glass product which is used in a semiconductor manufacturing apparatus and which can improve the temperature followability such as heating and cooling in the apparatus and can suppress an increase in the process time of heat treatment. And

【0005】[0005]

【課題を解決するための手段】上記目的を解決するため
になされた本発明にかかる半導体製造装置に用いられる
石英ガラス製品は、半導体製造装置に用いられる石英ガ
ラス製品において、溝が形成された面を有する第1の石
英ガラス部材と、前記第1の石英ガラス部材の溝が形成
された面と密着することによって前記溝を塞ぎ、前記溝
を流通路として形成する第2の石英ガラス部材とを備
え、前記流通路に、昇温または降温を促進するための加
熱流体または冷却流体を流通させることを特徴としてい
る。
A quartz glass product used in a semiconductor manufacturing apparatus according to the present invention, which has been made to solve the above-mentioned object, is a quartz glass product used in a semiconductor manufacturing apparatus, the surface of which a groove is formed. A first quartz glass member having: a second quartz glass member that closes the groove by being in close contact with the surface of the first quartz glass member where the groove is formed, and forms the groove as a flow passage. A heating fluid or a cooling fluid for promoting a temperature rise or a temperature decrease is circulated through the flow passage.

【0006】このように、本発明にかかる半導体製造装
置に用いられる石英ガラス製品は、昇温または降温を促
進するための加熱流体または冷却流体を流通させる流通
路が、石英ガラス製品の内部に形成されているため、例
えば、この流通路の両端部にチューブ等を接続し、流体
移送手段を備えた外部加熱装置を連結することにより、
前記流通路にガスまたは液の加熱流体を流通させ、該石
英ガラス製品の温度を昇温させる。また、この流通路に
あらかじめ冷却したガスまたは液体の流体を流通させる
ことにより、該石英ガラス製品の温度を降温させる。そ
の結果、加熱及び冷却等の温度追随性に優れ、炉内の昇
降温の速度を遅くすることもなく、プロセスタイムの増
加を抑制することができる。
As described above, in the quartz glass product used in the semiconductor manufacturing apparatus according to the present invention, the flow passage for flowing the heating fluid or the cooling fluid for promoting the temperature rise or the temperature decrease is formed inside the quartz glass product. Because, for example, by connecting tubes and the like to both ends of this flow path, by connecting an external heating device equipped with fluid transfer means,
A gas or liquid heating fluid is passed through the flow passage to raise the temperature of the quartz glass product. In addition, the temperature of the quartz glass product is lowered by flowing a gas or liquid fluid which has been cooled in advance through the flow passage. As a result, the temperature follow-up properties such as heating and cooling are excellent, and an increase in the process time can be suppressed without slowing down the rate of temperature rise and fall in the furnace.

【0007】ここで、前記第1の石英ガラス部材と第2
の石英ガラス部材とを融着させて一体化したことが望ま
しい。このように、第1の石英ガラス部材と第2の石英
ガラス部材とを融着させて一体化することにより、石英
ガラス製品の機械的強度を増すことができる。
Here, the first quartz glass member and the second quartz glass member
It is desirable that the quartz glass member is fused and integrated. By thus fusing and integrating the first quartz glass member and the second quartz glass member, the mechanical strength of the quartz glass product can be increased.

【0008】また、前記第1の石英ガラス部材及び第2
の石英ガラス部材は、平板形状であることが望ましく、
また前記第1の石英ガラス部材及び第2の石英ガラス部
材が半球形状であることが望ましく、前記第1の石英ガ
ラス部材及び第2の石英ガラス部材が管形状であること
が望ましい。
The first quartz glass member and the second quartz glass member
The quartz glass member is desirably a flat plate shape,
Further, it is desirable that the first quartz glass member and the second quartz glass member have a hemispherical shape, and that the first quartz glass member and the second quartz glass member have a tubular shape.

【0009】更に、前記第1の石英ガラス部材の溝が形
成された面、及び前記第1の石英ガラス部材の溝が形成
された面と密着する第2の石英ガラス部材の面が、鏡面
加工されていることが望ましい。このように、前記第1
の石英ガラス部材の溝が形成された面、及び前記第1の
石英ガラス部材の溝が形成された面と密着する第2の石
英ガラス部材の面が、鏡面加工されている場合には、接
合面に気泡等が残存せず、接合強度もほとんど一体物と
変わらない強固な石英ガラス製品とすることができる。
Further, the surface of the first quartz glass member where the groove is formed and the surface of the second quartz glass member which is in close contact with the surface where the groove of the first quartz glass member is formed are mirror-finished. It is desirable to have been. Thus, the first
When the grooved surface of the quartz glass member and the surface of the second quartz glass member that is in close contact with the grooved surface of the first quartz glass member are mirror-finished, bonding is performed. It is possible to obtain a strong quartz glass product in which no air bubbles or the like remain on the surface and the bonding strength is almost the same as that of an integrated product.

【0010】また、前記石英ガラス製品の形状が平板状
または半球状であって、該製品の平面に投影された流通
路の投影総面積が、前記平面に投影された製品全体の面
積に対し20乃至80%であることが望ましい。このよ
うに、該石英ガラス製品の平面に投影された流通路の投
影総面積が、前記平面に投影された製品全体の面積に対
し20乃至80%を占めるように、前記流通路が形成さ
れている場合には、十分な速度をもって、石英ガラス製
品の温度の昇降を行うことができる。
The quartz glass product has a flat or hemispherical shape, and the total area of the flow passage projected on the plane of the product is 20% of the total area of the product projected on the plane. It is desirably about 80% to 80%. Thus, the flow passage is formed such that the total projected area of the flow passage projected on the plane of the quartz glass product occupies 20 to 80% of the entire area of the product projected on the plane. In this case, the temperature of the quartz glass product can be raised and lowered at a sufficient speed.

【0011】また、前記第1の石英ガラス部材として、
その1430℃における粘度が1.0×1010ポイズ以
上の石英ガラス材を用い、かつ、前記第2の石英ガラス
部材として、その粘性が、前記第1の石英ガラス部材の
粘性の0.05乃至0.85倍のものを用いることが望
ましく、また前記第2の石英ガラス部材の粘性が、前記
第1の石英ガラス部材の粘性の0.35乃至0.55倍
であることがより望ましい。このような、第1の石英ガ
ラス部材及び第2の石英ガラス部材を用いることによ
り、両者のより高い密着性を得ることができる。特に、
第1の石英ガラス部材及び第2の石英ガラス部材の接合
面が鏡面加工されていない場合であっても、平坦な面に
形成されていれば、両者を十分密着させることができ
る。また、上記した特定の粘性を有する第1の石英ガラ
ス部材及び第2の石英ガラス部材を用いることにより、
融着時、使用時における過度の変形を防止することがで
きる。
Further, as the first quartz glass member,
A quartz glass material having a viscosity at 1430 ° C. of 1.0 × 10 10 poise or more is used, and the viscosity of the second quartz glass member is 0.05 to less than the viscosity of the first quartz glass member. It is desirable to use 0.85 times, and more desirably, the viscosity of the second quartz glass member is 0.35 to 0.55 times the viscosity of the first quartz glass member. By using such a first quartz glass member and a second quartz glass member, higher adhesion between them can be obtained. In particular,
Even if the joining surfaces of the first quartz glass member and the second quartz glass member are not mirror-finished, if they are formed on a flat surface, they can be sufficiently adhered to each other. Further, by using the first quartz glass member and the second quartz glass member having the above specific viscosity,
During fusion, excessive deformation during use can be prevented.

【0012】更に、前記第1の石英ガラス部材が、厚さ
1乃至20mmの石英ガラス部材であって、その一面に
深さ0.5乃至10mmの溝が形成された石英ガラス部
材であることが望ましく、前記第2の石英ガラス部材
が、厚さ0.2乃至5mmの薄肉体からなることがより
望ましい。
Further, the first quartz glass member may be a quartz glass member having a thickness of 1 to 20 mm, and a groove having a depth of 0.5 to 10 mm formed on one surface thereof. More preferably, the second quartz glass member is made of a thin body having a thickness of 0.2 to 5 mm.

【0013】[0013]

【発明の実施の形態】以下に、本発明を図面を参照して
更に詳細に説明する。図1は、本発明にかかる石英ガラ
ス製品の一実施形態を示す図であり、(a)は平面図、
(b)は図(a)のX−X線での断面図を示す。図1に
示される石英ガラス製品1は、矩形平板状に形成されて
おり、例えば加熱炉等の断熱用壁板、熱遮蔽板等の半導
体製造装置用製品として用いられる石英ガラス製品を示
している。この図1に示した石英ガラス製品1では、例
えば、図1(b)に示されているように、石英ガラス部
材2の内部に加熱流体または冷却流体が流通する流通路
3が形成されており、この流通路3を除いては、融着一
体化された構造となっている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a view showing one embodiment of a quartz glass product according to the present invention, wherein (a) is a plan view,
(B) is a sectional view taken along line XX of (a). The quartz glass product 1 shown in FIG. 1 is formed in a rectangular flat plate shape, and represents a quartz glass product used as a product for a semiconductor manufacturing device such as a heat insulating wall plate such as a heating furnace and a heat shielding plate. . In the quartz glass product 1 shown in FIG. 1, for example, as shown in FIG. 1B, a flow passage 3 through which a heating fluid or a cooling fluid flows is formed inside a quartz glass member 2. Except for the flow passage 3, the structure is integrated by fusion.

【0014】前記流通路3の平面配置パターンは、図1
(a)に示したように矩形平板状の石英ガラス製品1の
面に対し、ジグザグ状に配設されている。なお、図中、
符号3aは、流体供給または排出用のチューブ等を接続
する流通路3の端末口部を示す。また、前記流通路3の
配置パターンは、図1のようにジグザグ状に配置するも
のに限定されず、渦巻状やその他の形状でも良い。
The plane arrangement pattern of the flow passage 3 is shown in FIG.
As shown in (a), the quartz glass product 1 having a rectangular flat plate shape is arranged in a zigzag manner. In the figure,
Reference numeral 3a denotes a terminal opening of the flow passage 3 for connecting a fluid supply or discharge tube or the like. Further, the arrangement pattern of the flow passages 3 is not limited to a zigzag arrangement as shown in FIG. 1, but may be a spiral shape or another shape.

【0015】前記流通路3の配設密度は、石英ガラス製
品1の平面に投影された流通路3の総面積(図1(a)
における流通路3の総面積)が該石英ガラス製品1の平
面に投影された総面積(図1(a)における石英ガラス
製品全体の面積)に対し20乃至80%を占めるように
形成することが、製品の昇降温追従性及び面内均温性の
観点から好ましい。
The distribution density of the flow passages 3 is determined by the total area of the flow passages 3 projected on the plane of the quartz glass product 1 (FIG. 1A).
(The total area of the flow passage 3 in FIG. 1) occupies 20 to 80% of the total area projected on the plane of the quartz glass product 1 (the entire area of the quartz glass product in FIG. 1A). It is preferable from the viewpoints of the ability to follow the temperature rise and fall of the product and the in-plane temperature uniformity.

【0016】また、流通路3の断面形状も図1のように
矩形または正方形に限られるものではなく、前記流体の
流通が円滑である限り、円形、楕円形、のほか5角形以
上の多角形断面を有していても差し支えない。
The cross-sectional shape of the flow passage 3 is not limited to a rectangle or a square as shown in FIG. 1, but may be a circle, an ellipse, a polygon other than a pentagon or more as long as the flow of the fluid is smooth. It may have a cross section.

【0017】また、石英ガラス製品1は、図1に示すよ
うに矩形平板状に限定されるものではなく、円形、楕円
形等任意の平板状であってもよい。
The quartz glass product 1 is not limited to a rectangular flat plate as shown in FIG. 1, but may be an arbitrary flat plate such as a circular plate or an elliptical plate.

【0018】このような平板状の石英ガラス製品1を製
作するには、図2に示すように、上面側が鏡面研磨(鏡
面加工)され、かつ、該面に溝4が形成された板状石英
ガラス部材(第1の石英ガラス部材)2bと、前記第1
の石英ガラス部材2bの鏡面研磨面に密着するように下
面側が鏡面研磨された石英ガラス部材(第2の石英ガラ
ス部材)2aとを用意し、これらを接合する製作方法を
用いることが好ましい。
In order to manufacture such a flat quartz glass product 1, as shown in FIG. 2, a plate-like quartz having an upper surface mirror-polished (mirror-finished) and a groove 4 formed in the surface. A glass member (first quartz glass member) 2b;
It is preferable to prepare a quartz glass member (second quartz glass member) 2a whose lower surface is mirror-polished so as to be in close contact with the mirror-polished surface of the quartz glass member 2b, and to use a manufacturing method of joining these.

【0019】すなわち、溝4が形成された板状石英ガラ
ス部材(第1の石英ガラス部材)2bとその蓋部を構成
する石英ガラス部材(第2の石英ガラス部材)2aと
を、両部材の鏡面同士で、例えば炉内で加熱融着する等
により、接合して作製する。このようにして得られた石
英ガラス接合体は、勿論、接合したままの物を石英ガラ
ス製品として用いてもよく、また、上記接合体をさらに
加工処理して特殊形状の石英ガラス製品としても良い。
That is, the plate-shaped quartz glass member (first quartz glass member) 2b having the groove 4 formed thereon and the quartz glass member (second quartz glass member) 2a forming the lid thereof are connected to each other. The mirror surfaces are joined to each other by, for example, heating and fusing in a furnace. The quartz glass joined body thus obtained may, of course, be used as it is, as it is, as a quartz glass product, or the joint body may be further processed into a specially shaped quartz glass product. .

【0020】また、前記第1の石英ガラス部材(主部
材)2bと前記第2の石英ガラス部材(封止用蓋部材)
2aとに同じ材質の石英ガラスを用いても良いが、両部
材2a、2bに夫々別材質の石英ガラスを使用しても良
い。例えば、前記第1の石英ガラス部材(主部材)2b
を構成する石英ガラスとして、その溶融軟化温度、即
ち、1430℃における粘性が、1.0×1010ポイズ
以上、より好ましくは3.1×1010乃至3.4×10
10ポイズ、の高粘性石英ガラスを使用することによっ
て、石英ガラス製品1に、高温での安定した形状保持
性、即ち、優れた耐熱変形性が備えられる。
The first quartz glass member (main member) 2b and the second quartz glass member (sealing lid member)
Although quartz glass of the same material may be used for 2a, quartz glass of another material may be used for both members 2a and 2b. For example, the first quartz glass member (main member) 2b
Has a viscosity of 1.0 × 10 10 poise or more, more preferably 3.1 × 10 10 to 3.4 × 10 4 at a melting softening temperature of 1430 ° C.
By using a high-viscosity quartz glass of 10 poise, the quartz glass product 1 is provided with stable shape retention at high temperatures, that is, excellent heat deformation resistance.

【0021】また、第2の石英ガラス部材(封止用蓋部
材)2aを構成する石英ガラス材として、その粘性が、
前記第1の石英ガラス部材(主部材)2bの粘性の0.
05乃至0.85倍、特に好ましくは、0.35乃至
0.55倍の範囲にある低粘性石英ガラスを使用する。
このように、第1の石英ガラス部材(主部材)2bに高
粘性石英ガラスを、第2の石英ガラス部材(封止用蓋部
材)に特定範囲にある低粘性石英ガラスを組み合わせ使
用することにより、融着時に接合面に過度の変形が生ず
ることなく、しかも未融着部分の発生が抑制される。ま
た、第1の石英ガラス部材(主部材)2b及び第2の石
英ガラス部材(封止用蓋部材)を十分密着させ、両者を
所定形状に一体化することができる。更に、未融着部分
の存在が極力抑制されるため、急激な温度変化による割
れが防止される。
As a quartz glass material constituting the second quartz glass member (sealing lid member) 2a, its viscosity is
The first quartz glass member (main member) 2b has a viscosity of 0.
A low-viscosity quartz glass in the range of 05 to 0.85 times, particularly preferably 0.35 to 0.55 times is used.
As described above, by using a high-viscosity quartz glass in combination with the first quartz glass member (main member) 2b and a low-viscosity quartz glass in a specific range for the second quartz glass member (sealing lid member). In addition, excessive deformation does not occur in the joint surface at the time of fusion, and the generation of an unfused portion is suppressed. Further, the first quartz glass member (main member) 2b and the second quartz glass member (sealing lid member) can be sufficiently adhered to each other to integrate them into a predetermined shape. Further, since the presence of the unfused portion is suppressed as much as possible, cracking due to a rapid temperature change is prevented.

【0022】なお、前記第1の石英ガラス部材(主部
材)2bの高粘性石英ガラスと第2の石英ガラス部材
(封止用蓋部材)2aの特定低粘性石英ガラスを組み合
わせる前記構成の場合、接合すべき融着面の徹底した鏡
面仕上げが不要となり、ある程度の平坦度を有する面に
上げることで、十分に融着することができるという利点
も得られる。
Incidentally, in the case of the above-mentioned configuration in which the high-viscosity quartz glass of the first quartz glass member (main member) 2b and the specific low-viscosity quartz glass of the second quartz glass member (sealing lid member) 2a are combined, Thorough mirror finishing of the fusion surface to be joined is not required, and by increasing the surface to have a certain degree of flatness, there is also obtained an advantage that sufficient fusion can be achieved.

【0023】ここで、前記第2の石英ガラス部材(封止
用蓋部材)2aの粘性が、前記第1の石英ガラス部材
(主部材)2bの粘性の0.05倍より小さい場合は、
融着時の粘性が低いため、第2の石英ガラス部材(封止
用蓋部材)2aが撓んで、前記第1の石英ガラス部材
(主部材)2bの溝4の上面から内部に垂れ下がり、溝
4を変形させる不都合を生じる場合がある。したがっ
て、第2の石英ガラス部材(封止用蓋部材)2aの粘性
が、第1の石英ガラス部材(主部材)2bの粘性の0.
05倍以上が好ましく、特に、第1の石英ガラス部材
(主部材)2bの粘性の0.35倍以上が好ましい。
Here, when the viscosity of the second quartz glass member (sealing lid member) 2a is smaller than 0.05 times the viscosity of the first quartz glass member (main member) 2b,
Since the viscosity at the time of fusion is low, the second quartz glass member (sealing lid member) 2a bends and hangs down from the upper surface of the groove 4 of the first quartz glass member (main member) 2b into the groove. 4 may be inconvenient. Therefore, the viscosity of the second quartz glass member (sealing lid member) 2a is lower than the viscosity of the first quartz glass member (main member) 2b by 0.1.
It is preferably at least 05 times, particularly preferably at least 0.35 times the viscosity of the first quartz glass member (main member) 2b.

【0024】一方、第2の石英ガラス部材(封止用蓋部
材)2aの粘性が、第1の石英ガラス部材(主部材)2
bの粘性の0.85倍より大きい場合は、既に述べたよ
うに両部材に同質の石英ガラスを用いるのと同じ状態と
なり、接合すべき融着面の適度な鏡面仕上げが必要とな
る。また、石英ガラス体1の形状を完全な所定形状に維
持し、接合部を融着することがやや困難となる。したが
って、第2の石英ガラス部材(封止用蓋部材)2aの粘
性が、第1の石英ガラス部材(主部材)2bの粘性の
0.85倍以下が好ましく、特に第1の石英ガラス部材
(主部材)2bの粘性の0.55倍以下が好ましい。
On the other hand, the viscosity of the second quartz glass member (sealing lid member) 2a is reduced by the first quartz glass member (main member) 2a.
If the viscosity is more than 0.85 times the viscosity of b, as described above, the same state is obtained as when quartz glass of the same quality is used for both members, and an appropriate mirror surface finish of the fusion surface to be joined is required. Further, it is somewhat difficult to maintain the shape of the quartz glass body 1 in a completely predetermined shape and to fuse the joint. Therefore, the viscosity of the second quartz glass member (sealing lid member) 2a is preferably 0.85 times or less the viscosity of the first quartz glass member (main member) 2b, and particularly the first quartz glass member ( It is preferably 0.55 times or less the viscosity of the main member 2b.

【0025】前記第2の石英ガラス部材(封止用蓋部
材)2a及び第1の石英ガラス部材(主部材)2bの厚
さは、第1の石英ガラス部材(主部材)2bが1乃至2
0mm程度が好ましい。この板厚が厚いと熱容量が大き
くなり、昇降温の速度が低下する。一方、板厚が薄いと
熱容量が小さくなるが、変形し易くなる。これら点を考
慮して、第1の石英ガラス部材(主部材)2bの板厚が
適宜決定される。また、第2の石英ガラス部材(封止用
蓋部材)2aは、板厚が1乃至5mmの範囲にある薄肉
体であることが好ましく、前記第2の石英ガラス部材
が、厚さ0.2乃至5mmの薄肉体からなることがより
望ましい。前記第2の石英ガラス部材(封止用蓋部材)
2a板厚が、1mm未満では、部材2aが変形し、本発
明の流通路3形成用の溝部4の上面に凹凸が形成されて
しまう危険性が生ずる。一方、板厚が5mmを越える場
合には、第2の石英ガラス部材(封止用蓋部材)2aの
上面迄の間隔が長くなる場合があり、その部分の熱容量
が大きくなり、流通路3内を通過する流体からの熱伝達
がやや不十分となる。
The thicknesses of the second quartz glass member (sealing lid member) 2a and the first quartz glass member (main member) 2b are 1 to 2 for the first quartz glass member (main member) 2b.
About 0 mm is preferable. When the plate thickness is large, the heat capacity increases, and the speed of temperature rise and fall decreases. On the other hand, when the plate thickness is small, the heat capacity is small, but the plate is easily deformed. In consideration of these points, the plate thickness of the first quartz glass member (main member) 2b is appropriately determined. Further, the second quartz glass member (sealing lid member) 2a is preferably a thin body having a plate thickness in the range of 1 to 5 mm, and the second quartz glass member has a thickness of 0.2 mm. More preferably, it is made of a thin body having a thickness of 5 to 5 mm. The second quartz glass member (sealing lid member)
If the thickness of the plate 2a is less than 1 mm, the member 2a is deformed, and there is a risk that the unevenness is formed on the upper surface of the groove 4 for forming the flow passage 3 of the present invention. On the other hand, if the plate thickness exceeds 5 mm, the distance to the upper surface of the second quartz glass member (sealing lid member) 2a may be long, and the heat capacity of that portion may increase, and the flow path 3 The heat transfer from the fluid passing through is slightly poor.

【0026】図1の石英ガラス製品1の場合、図2に示
すように溝4の厚さを含まない第1の石英ガラス部材
(主部材)2bの厚さt2 は、第2の石英ガラス部材
(封止用蓋部材)2aの厚さt1 にほぼ等しく設定され
ている。しかし、両部材2a、2bが必ずしも同一の有
効厚さを有する必要はなく、この主部材2bの厚さt2
を厚く、封止用蓋部材2aの厚さt1 を薄くすること
も、またその逆も可能である。なお、このとき第1の石
英ガラス部材(主部材)2bに形成される溝4の深さd
は0.5mm乃至10mmである。
In the case of the quartz glass product 1 shown in FIG. 1, as shown in FIG. 2, the thickness t 2 of the first quartz glass member (main member) 2b not including the thickness of the groove 4 is the second quartz glass. The thickness is set substantially equal to the thickness t 1 of the member (sealing lid member) 2a. However, the two members 2a and 2b do not necessarily have to have the same effective thickness, and the thickness t 2 of the main member 2b is not necessary.
And the thickness t 1 of the sealing lid member 2a can be reduced, and vice versa. At this time, the depth d of the groove 4 formed in the first quartz glass member (main member) 2b
Is 0.5 mm to 10 mm.

【0027】次に、図3を参照して、石英ガラス製品1
の作製における前記石英ガラス部材の融着処理方法につ
いて説明する。図3に示すように、カーボン製の下部材
5の上に第1の石英ガラス部材(主部材)2bと第2の
石英ガラス部材(封止用蓋部材)2aを配置し、その上
にカーボン製の上部材6を載せ、更にその上にカーボン
材からなる重り7を載せて熱処理炉内にセッティングす
る。なお、下部材5の上面と、上部材6の下面には、鏡
面加工が施されている。
Next, referring to FIG.
The method for fusing the quartz glass member in the production of the above will be described. As shown in FIG. 3, a first quartz glass member (main member) 2b and a second quartz glass member (sealing lid member) 2a are arranged on a lower member 5 made of carbon, and carbon An upper member 6 made of carbon material is placed thereon, and a weight 7 made of a carbon material is further placed thereon and set in a heat treatment furnace. The upper surface of the lower member 5 and the lower surface of the upper member 6 are mirror-finished.

【0028】また、本発明における融着処理において、
各石英ガラス部材が完全に融着し、石英ガラス部材が一
体化するためには、前記カーボン部材が均質であること
及び石英ガラス部材と接する部分が所定の表面粗度を有
していることが重要である。この表面粗度と均質性を適
切なものとするには、例えば、前記カーボン材に開気孔
率が15%以下で、かつ嵩密度が1.8乃至2.0g/
cm3 のものを用い、これをバフ研磨、あるいは鏡面研
磨して仕上げる。
In the fusing treatment according to the present invention,
In order for each quartz glass member to be completely fused and for the quartz glass member to be integrated, the carbon member must be homogeneous and the portion in contact with the quartz glass member must have a predetermined surface roughness. is important. In order to make the surface roughness and the homogeneity appropriate, for example, the carbon material has an open porosity of 15% or less and a bulk density of 1.8 to 2.0 g / g.
cm 3 , which is finished by buffing or mirror polishing.

【0029】これによって、カーボン部材による石英ガ
ラス部材への均一な加圧が可能となり、また石英ガラス
とカーボンの熱膨張係数の違いに伴う製造時の石英ガラ
ス中への熱歪みの残留を防止することが可能となる。
This makes it possible to apply uniform pressure to the quartz glass member by the carbon member, and to prevent thermal strain from remaining in the quartz glass during manufacture due to the difference in the thermal expansion coefficient between quartz glass and carbon. It becomes possible.

【0030】そして、炉内を1torr以下の真空に保
ち、1300乃至1600℃で0.5〜5時間熱処理し
て、2枚の石英ガラス板2a、2bの接合面を融着す
る。この熱処理は温度が低い時は長く、高い時は短く
し、状況に応じて適宜変更して行う。この工程におい
て、溝内の雰囲気は、減圧あるいは非酸化性雰囲気にな
るようにする。冷却に際しては、石英ガラスの歪み点で
ある1150℃付近での冷却を穏やかに行う。1150
℃付近での冷却速度は、例えば50乃至150℃/時間
程度の設定する。
Then, the inside of the furnace is kept at a vacuum of 1 torr or less, and a heat treatment is performed at 1300 to 1600 ° C. for 0.5 to 5 hours to fuse the bonded surfaces of the two quartz glass plates 2a and 2b. This heat treatment is performed for a long time when the temperature is low, and for a short time when the temperature is high. In this step, the atmosphere in the groove is set to a reduced pressure or a non-oxidizing atmosphere. In cooling, the cooling is performed gently at about 1150 ° C., which is the strain point of quartz glass. 1150
The cooling rate in the vicinity of ° C. is set, for example, to about 50 to 150 ° C./hour.

【0031】このような熱処理によって、2枚の第1、
第2の石英ガラス部材2a、2bの接合面全体を融着し
て実質的に一体化する。即ち、前記溝部4が塞がれ石英
ガラス製品1の内部に中空の空間(流通路3)が形成さ
れ、この空間部を除いて実質的に一体化される。
By such a heat treatment, two sheets of the first,
The entire joint surface of the second quartz glass members 2a, 2b is fused and substantially integrated. That is, the groove 4 is closed to form a hollow space (flow passage 3) inside the quartz glass product 1, and the quartz glass product 1 is substantially integrated except for this space.

【0032】次に、本発明にかかる石英ガラス製品の第
2の実施形態について、図4に基づいて説明する。この
図4に示された実施形態は、ウエハ熱処理炉の石英チャ
ンバー等に用いられる椀型形状の石英ガラス製品であ
る。なお、図4は、椀型形状に形成された石英ガラス製
品を示す図であって、(a)は平面図、(b)は正面
図、(c)は断面図を夫々示す。図2に示した椀型形状
の石英ガラス製品21では、図4(c)に示すように、
石英ガラス製品21の内部に加熱流体または冷却流体の
流通路23が形成されており、この流通路23を除いて
一体化され、全体として椀型形状になされている。ま
た、前記流通路23の配置パターンは、図4(a)に示
すように石英ガラス製品21の椀型曲面に対し、渦巻型
に配置されている。また、図中、符号23a、23b
は、夫々流通路23の端末に接続する流体供給用管及び
排出用管を示す。また符号25は半導体ウエハ25を加
熱するためのヒータである。
Next, a second embodiment of the quartz glass product according to the present invention will be described with reference to FIG. The embodiment shown in FIG. 4 is a bowl-shaped quartz glass product used for a quartz chamber or the like of a wafer heat treatment furnace. 4A and 4B are views showing a quartz glass product formed in a bowl shape, wherein FIG. 4A is a plan view, FIG. 4B is a front view, and FIG. 4C is a cross-sectional view. In the bowl-shaped quartz glass product 21 shown in FIG. 2, as shown in FIG.
A flow path 23 for the heating fluid or the cooling fluid is formed inside the quartz glass product 21, and is integrated except for the flow path 23 to form a bowl-like shape as a whole. The arrangement pattern of the flow passages 23 is spirally arranged with respect to the bowl-shaped curved surface of the quartz glass product 21 as shown in FIG. Also, in the figure, reference numerals 23a, 23b
Denotes a fluid supply pipe and a discharge pipe connected to the terminals of the flow passage 23, respectively. Reference numeral 25 denotes a heater for heating the semiconductor wafer 25.

【0033】なお、前記流通路23の配置パターンは、
前記渦巻形状に限定されるものではないことは、図1に
示した平板状の石英ガラス製品1の場合と同じである。
The arrangement pattern of the flow passage 23 is as follows.
The shape is not limited to the spiral shape as in the case of the flat quartz glass product 1 shown in FIG.

【0034】また、前記流通路23の配設密度は、石英
ガラス製品21の平面に投影された流通路23の流路総
面積(図4(a)に示された流通路23の流路総面積)
が、該石英ガラス製品21の平面に投影された総面積
(図4(a)に示された石英ガラス製品21の総面積)
に対して、20乃至80%を占めるように形成すること
が、製品の昇降温追従性及び面内均温性の観点から好ま
しい。また、流通路23の断面形状や流路面積は、必ず
しも限定されるものではないが、平板状の石英ガラス製
品1の場合とほぼ同様のサイズに形成することが好まし
い。また、当然のことながら、石英ガラス製品21の平
面形状は、必ずしも図2の場合のように円形に限定され
るものではなく、楕円形等の形状であっても良い。
The distribution density of the flow passages 23 is determined by the total flow passage area of the flow passages 23 projected on the plane of the quartz glass product 21 (the total flow passage area of the flow passages 23 shown in FIG. area)
Is the total area projected on the plane of the quartz glass product 21 (total area of the quartz glass product 21 shown in FIG. 4A).
However, it is preferable to form so as to occupy 20 to 80% from the viewpoints of the ability to follow the temperature rise and fall of the product and the in-plane uniform temperature. Further, the cross-sectional shape and flow area of the flow passage 23 are not necessarily limited, but it is preferable that the flow passage 23 be formed to have substantially the same size as that of the flat quartz glass product 1. In addition, as a matter of course, the planar shape of the quartz glass product 21 is not necessarily limited to a circular shape as in the case of FIG. 2 and may be an elliptical shape or the like.

【0035】このような椀形状の石英ガラス製品21を
製作する方法として、外面側(凸曲面側)が鏡面研磨さ
れ、かつ、該面に溝が形成された椀形状の内套石英ガラ
ス部材(第1の石英ガラス部材)22bと、内面側(凹
曲面側)が前記第1の石英ガラス部材の鏡面研磨面が密
着するように鏡面研磨された外套石英ガラス部材22a
とを用意し、両部材の鏡面同士を嵌め合せて接合する。
この部材同士の接合には、炉内での加熱融着、火炎加熱
による溶着等の手法を用いる。なお、前記の場合とは逆
に、溝を外套石英ガラス部材の内面側(凹曲面側)鏡面
に形成しても差し支えない。
As a method of manufacturing such a bowl-shaped quartz glass product 21, a bowl-shaped inner quartz glass member having an outer surface side (convex curved surface side) mirror-polished and a groove formed in the surface is used. A first quartz glass member) 22b and an outer quartz glass member 22a whose inner surface side (concave curved surface side) is mirror-polished so that the mirror-polished surface of the first quartz glass member is in close contact with the outer quartz glass member 22a
Are prepared, and the mirror surfaces of both members are fitted together and joined.
For joining these members, techniques such as heat fusion in a furnace and welding by flame heating are used. Contrary to the above case, the groove may be formed on the inner side (concave curved side) mirror surface of the envelope quartz glass member.

【0036】前記両石英ガラス部材22a、22bは同
じ材質の石英ガラスで構成されても良いが、前記両石英
ガラス部材の何れか一方、例えば、第1の石英ガラス部
材22bに、前記平板状の石英ガラス製品1の場合と同
じ高粘性石英ガラス(1430℃における粘性が、1.
0×1010ポイズ以上、より好ましくは3.1×10 10
乃至3.4×1010ポイズ)の高粘性石英ガラスを使用
し、他方の部材、例えば、第2の石英ガラス部材22a
に、前記高粘性石英ガラスの粘性の0.05乃至0.8
5倍、特に好ましくは、0.35乃至0.55倍、の範
囲にある低粘性石英ガラスを使用することが好ましい。
The quartz glass members 22a and 22b are the same.
It may be composed of the same material quartz glass,
Any one of the glass members, for example, the first quartz glass part
The material 22b is the same as that of the flat quartz glass product 1 described above.
High-viscosity quartz glass (having a viscosity at 1430 ° C. of 1.
0x10TenPoise or more, more preferably 3.1 × 10 Ten
To 3.4 × 10TenPoise) high viscosity quartz glass
And the other member, for example, the second quartz glass member 22a
The viscosity of the high-viscosity quartz glass is 0.05 to 0.8.
5 times, particularly preferably 0.35 to 0.55 times.
It is preferred to use the low viscosity quartz glass in the enclosure.

【0037】前記石英ガラス製品21を構成する外套石
英ガラス部材(第2の石英ガラス部材)22a及び内套
石英ガラス部材(第1の石英ガラス部材)22bの厚さ
は、前記内套石英ガラス部材が3乃至6mm程度が好ま
しく、前記外套ガラス部材は、板厚が1乃至4mmの範
囲にあることが好ましい。図4の石英ガラス製品21の
場合、溝の厚さを含まない内套石英ガラス部材の厚さ
は、外套石英ガラス部材の厚さにほぼ等しく設定されて
いる。しかし、両部材が必ずしも同一の厚さを有する必
要はなく、この内套石英ガラス部材の厚さを厚く、外套
石英ガラス部材の厚さを薄くすることも、またその逆も
可能である。なお、このとき形成される溝の深さは0.
5mm乃至5mmである。
The thickness of the outer quartz glass member (second quartz glass member) 22a and the inner quartz glass member (first quartz glass member) 22b constituting the quartz glass product 21 is determined by the inner quartz glass member. Is preferably about 3 to 6 mm, and the thickness of the jacket glass member is preferably in the range of 1 to 4 mm. In the case of the quartz glass product 21 of FIG. 4, the thickness of the inner quartz glass member not including the thickness of the groove is set substantially equal to the thickness of the outer quartz glass member. However, it is not necessary for both members to have the same thickness, and it is possible to increase the thickness of the inner quartz glass member and the thickness of the outer quartz glass member, and vice versa. The depth of the groove formed at this time is 0.
5 mm to 5 mm.

【0038】次に、本発明にかかる石英ガラス製品の第
3の実施形態について、図5に基づいて説明する。この
実施形態は、炉芯管等に用いられる管形状の石英ガラス
製品である。なお、図5は、石英ガラス製品を示す図で
あって、(a)は石英ガラス製品の斜視図、(b)は該
石英ガラス製品を構成する外管部材の側面図、(c)は
該石英ガラス製品を構成する内管部材の側面図を示す。
Next, a third embodiment of the quartz glass product according to the present invention will be described with reference to FIG. This embodiment is a tube-shaped quartz glass product used for a furnace core tube or the like. 5A and 5B show a quartz glass product, wherein FIG. 5A is a perspective view of the quartz glass product, FIG. 5B is a side view of an outer tube member constituting the quartz glass product, and FIG. The side view of the inner tube member which comprises a quartz glass product is shown.

【0039】図5に示した管型形状の石英ガラス製品3
1では、図5(a)に示すように、石英ガラス製品31
の内部に加熱流体または冷却流体の流通路33が形成さ
れており、この流通路33を除いて一体化され、全体と
して管型形状になされている。また、前記流通路33の
配置パターンは、図5(a)に示すように石英ガラス製
品21の軸線に沿って直線状に形成する必要はなく、石
英ガラス製品31を巻回するように螺旋状に形成しても
良い。
The tube-shaped quartz glass product 3 shown in FIG.
In FIG. 1, as shown in FIG.
A flow path 33 for a heating fluid or a cooling fluid is formed in the inside, and is integrated except for the flow path 33 to form a tubular shape as a whole. The arrangement pattern of the flow passages 33 does not need to be formed linearly along the axis of the quartz glass product 21 as shown in FIG. May be formed.

【0040】この管型形状の石英ガラス製品31を構成
する内管部材32bは、前記した実施形態における第1
の石英ガラス部材の特質を有しているものが用いられ、
また外管部材32aは第2の石英ガラス部材の特質を有
しているものが用いられる。そのため、詳細な説明は省
略する。また、溝の形状、寸法についても前記した第1
の実施形態と同様であるため、そのため、詳細な説明は
省略する。
The inner tube member 32b constituting the tube-shaped quartz glass product 31 is the first tube member in the above-described embodiment.
What has the characteristic of the quartz glass member of is used,
As the outer tube member 32a, a member having the characteristics of the second quartz glass member is used. Therefore, detailed description is omitted. In addition, the shape and size of the groove are also determined by the first
Since the third embodiment is the same as the first embodiment, a detailed description thereof will be omitted.

【0041】次に、管形状の石英ガラス製品の製造方法
について述べる。この石英ガラス製品を製作するには、
先ず互いに内外嵌め合状態になされる内管部材32b
(第1石英ガラス部材)と外管部材32a(第2石英ガ
ラス部材)とを用意する。そして、内管部材32b(第
1石英ガラス部材)の外周面と外管部材32a(第2の
石英ガラス部材)内表面が互いに密着するように、夫々
の面を鏡面研磨加工を行う。
Next, a method for producing a tube-shaped quartz glass product will be described. To make this quartz glass product,
First, the inner tube member 32b is fitted into the inside and outside.
(First quartz glass member) and outer tube member 32a (second quartz glass member) are prepared. Then, the respective surfaces are mirror-polished so that the outer peripheral surface of the inner tube member 32b (first quartz glass member) and the inner surface of the outer tube member 32a (second quartz glass member) are in close contact with each other.

【0042】次いで、前記内管部材32bの鏡面加工さ
れた外周面に、溝部34を加工形成する。そして、この
溝34が形成された内管部材32bを外管部材32aに
嵌入する。その後、該内外管部材の隙間から真空引きを
行いながら内外管部材の内外部から加熱して前記内外管
部材同士を溶着接合することによって、管形状の石英ガ
ラス製品31を得ることができる。
Next, a groove 34 is formed in the mirror-finished outer peripheral surface of the inner tube member 32b. Then, the inner tube member 32b having the groove 34 formed therein is fitted into the outer tube member 32a. Thereafter, the inner and outer pipe members are heated from the inside and the outside while the inner and outer pipe members are heated while being evacuated from the gap between the inner and outer pipe members, thereby welding and joining the inner and outer pipe members to each other, thereby obtaining a tube-shaped quartz glass product 31.

【0043】上記したいずれの石英ガラス製品において
も、その内部に形成された流通路内に加熱または冷却流
体を流通させることにより、該石英ガラス製品の温度を
迅速かつ確実に所望の温度に昇降させることができ、従
来、半導体処理装置の中で温度変化に対する追従性が悪
いため、処理速度向上の問題となっていた石英ガラス製
品の課題を解消することができる。
In any of the quartz glass products described above, the temperature of the quartz glass product is quickly and reliably raised and lowered to a desired temperature by flowing a heating or cooling fluid through a flow passage formed therein. This can solve the problem of the quartz glass product, which has conventionally been a problem of improving the processing speed because of poor follow-up to the temperature change in the semiconductor processing apparatus.

【0044】例えば、ウエハ加熱処理装置に本発明の椀
形状石英ガラス製品よりなる石英チャンバーを使用した
場合、それを使用しない同型の従来装置に比べて昇温速
度を10%向上させることができ、更に従来、石英ガラ
スが昇温するまで安定しなかった装置内均熱化に要する
時間を約10%短縮できる。また、降温については従来
の自然放冷やガス流入による冷却の場合20%の向上が
達成できた。更に、バッチ処理炉では、本発明の製品を
用いることにより、昇温時間が5%向上し、均熱時間も
5%向上した。また、冷却については昇温時間が10
%、均熱時間が20%向上した。
For example, when a quartz chamber made of the bowl-shaped quartz glass product of the present invention is used in the wafer heat treatment apparatus, the rate of temperature rise can be improved by 10% compared to a conventional apparatus of the same type which does not use it. Furthermore, the time required for soaking in the apparatus, which was not stable until the temperature of the quartz glass was increased, can be reduced by about 10%. As for the temperature decrease, a 20% improvement was achieved in the case of conventional natural cooling or cooling by gas inflow. Further, in the batch processing furnace, by using the product of the present invention, the temperature raising time was improved by 5% and the soaking time was also improved by 5%. As for cooling, the heating time is 10 minutes.
% And soaking time increased by 20%.

【0045】[0045]

【実施例】本発明にかかる石英ガラス製チャンバーを装
備した図4に示す枚葉式ウエハ熱処理炉(実施例)と、
石英ガラス製チャンバーに従来品を用いた以外は前記装
置と同型の従来の枚葉式ウエハ処理炉(従来例)とを用
意し、両者のウエハ熱処理工程(いずれもウエハの定常
熱処理温度850℃)時における炉内温度の変化サイク
ルを比較評価した。なお、図4に示した装置での強制昇
温には加熱流体として1000℃に加熱したN2 ガスを
流通させ、強制降温には冷却流体として10℃の水を用
いた。その結果を線図として図6に示した。図6から明
らかなように、従来例では850℃まで約35時間要し
ていた昇温時間を、実施例では約20時間に短縮するこ
とが認められた。また、降温速度においても、従来例で
約20℃/hrであったものを、実施例では約40℃/
hrに高速化することが認められた。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A single-wafer type wafer heat treatment furnace (embodiment) shown in FIG. 4 equipped with a quartz glass chamber according to the present invention;
Except for using a conventional product in a quartz glass chamber, a conventional single-wafer processing furnace (conventional example) of the same type as the above-described apparatus was prepared, and both wafer heat treatment processes (in each case, a steady heat treatment temperature of a wafer of 850 ° C.) The change cycle of the furnace temperature at the time was compared and evaluated. In the apparatus shown in FIG. 4, N 2 gas heated to 1000 ° C. was flowed as a heating fluid for forced temperature rise, and 10 ° C. water was used as a cooling fluid for forced temperature fall. The result is shown in FIG. 6 as a diagram. As is clear from FIG. 6, it was recognized that the heating time required from about 35 hours to 850 ° C. in the conventional example was reduced to about 20 hours in the example. In addition, the cooling rate was about 20 ° C./hr in the conventional example, but about 40 ° C./hr in the example.
It was observed that the speed was increased to hr.

【0046】[0046]

【発明の効果】上述した通り、本発明にかかる半導体製
造装置に用いられる石英ガラス製品は、その内部に加熱
または冷却流体が流通する流通路が形成されているた
め、該流通路内に加熱または冷却流体を流通させること
によって、該半導体製造装置の温度を迅速かつ確実に所
望の温度に昇降させることができ、加熱及び冷却等の温
度追随性に優れ、熱処理のプロセスタイムの増加を抑制
することができる。
As described above, the quartz glass product used in the semiconductor manufacturing apparatus according to the present invention has a flow passage through which a heating or cooling fluid flows. By allowing the cooling fluid to flow, the temperature of the semiconductor manufacturing apparatus can be quickly and surely raised and lowered to a desired temperature, excellent in temperature followability such as heating and cooling, and suppressing an increase in the heat treatment process time. Can be.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は、本発明にかかる第1の実施形態を示す
図であり、(a)は平面図、(b)は図(a)のX−X
線での断面図を示す。
FIGS. 1A and 1B are views showing a first embodiment according to the present invention, wherein FIG. 1A is a plan view, and FIG.
FIG.

【図2】図2は、図1の平板状の石英ガラス製品の断面
図である。
FIG. 2 is a sectional view of the flat quartz glass product of FIG. 1;

【図3】図3は、図1の平板状の石英ガラス製品の作製
における石英ガラス部材の融着処理方法を説明するため
の図である。
FIG. 3 is a view for explaining a method of fusion-bonding a quartz glass member in manufacturing the flat quartz glass product of FIG. 1;

【図4】図4は、本発明の第2の実施形態を示す図であ
り、(a)は平面図、(b)は正面図、(c)は断面図
である。
FIGS. 4A and 4B are views showing a second embodiment of the present invention, wherein FIG. 4A is a plan view, FIG. 4B is a front view, and FIG.

【図5】図5は、本発明の第3の実施形態を示す図であ
り、(a)は石英ガラス製品の斜視図、(b)は該石英
ガラス製品を製作するのに用いられる外管部材の断面
図、(c)はその内管部材の断面図である。
FIG. 5 is a view showing a third embodiment of the present invention, wherein (a) is a perspective view of a quartz glass product, and (b) is an outer tube used for manufacturing the quartz glass product. FIG. 3C is a sectional view of the member, and FIG.

【図6】図6は、本発明の石英チャンバーを装備した熱
処理炉と従来の処理炉とのウエハ熱処理工程(定常熱処
理温度850℃)時における炉内温度変化サイクルを比
較評価した線図である。
FIG. 6 is a diagram comparing and evaluating a temperature change cycle in a furnace in a wafer heat treatment step (steady heat treatment temperature of 850 ° C.) between a heat treatment furnace equipped with a quartz chamber of the present invention and a conventional treatment furnace. .

【符号の説明】[Explanation of symbols]

1、21、31 石英ガラス製品 2 石英ガラス部材 2a 封止用蓋部材(第2石英ガラス部材) 2b 主部材(第1石英ガラス部材) 22a 外套石英ガラス部材(第2石英ガラス
部材) 22b 内套石英ガラス部材(第1石英ガラス
部材) 32a 外管部材(第2石英ガラス部材) 32b 内管部材(第1石英ガラス部材) 3、23、33 流通路 3a 端末口部 4、34 溝部 5 カーボン製下部材 6 カーボン製上部材 7 重り 23a 流体供給用管 23b 流体排出用管 t1 石英ガラス部材(封止用蓋部材)厚さ t2 石英ガラス部材(主部材)厚さ A ウエハ
1, 21, 31 Quartz glass product 2 Quartz glass member 2a Sealing lid member (second quartz glass member) 2b Main member (first quartz glass member) 22a Outer quartz glass member (second quartz glass member) 22b Inner jacket Quartz glass member (first quartz glass member) 32a Outer tube member (second quartz glass member) 32b Inner tube member (first quartz glass member) 3, 23, 33 Flow passage 3a Terminal opening 4, 34 Groove 5 Carbon lower member 6 made of carbon upper member 7 weight 23a fluid supply tube 23b fluid discharge pipe t 1 quartz glass member (sealing lid member) thickness t 2 of quartz glass member (main member) thickness A wafer

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成12年6月26日(2000.6.2
6)
[Submission date] June 26, 2000 (2006.2.
6)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図6[Correction target item name] Fig. 6

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図6】 FIG. 6

フロントページの続き (72)発明者 金 富雄 山形県西置賜郡小国町大字小国町378番地 東芝セラミックス株式会社小国製造所内 (72)発明者 永田 智浩 山形県西置賜郡小国町大字小国町378番地 東芝セラミックス株式会社小国製造所内 Fターム(参考) 4G014 AH02 AH08 AH23 5F031 CA02 HA02 HA03 HA62 HA63 HA64 MA30 PA30 Continued on the front page (72) Inventor Tomi Kane 378 Oguni-machi, Oguni-machi, Nishiokitama-gun, Yamagata Toshiba Ceramics Co., Ltd. 4G014 AH02 AH08 AH23 5F031 CA02 HA02 HA03 HA62 HA63 HA64 MA30 PA30

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 半導体製造装置に用いられる石英ガラス
製品において、 溝が形成された面を有する第1の石英ガラス部材と、前
記第1の石英ガラス部材の溝が形成された面と密着する
ことによって前記溝を塞ぎ、前記溝を流通路として形成
する第2の石英ガラス部材とを備え、 前記流通路に、昇温または降温を促進するための加熱流
体または冷却流体を流通させることを特徴とする半導体
製造装置に用いられる石英ガラス製品。
1. A quartz glass product used in a semiconductor manufacturing apparatus, wherein a first quartz glass member having a surface on which a groove is formed, and a surface of the first quartz glass member on which the groove is formed are in close contact with each other. A second quartz glass member that closes the groove and forms the groove as a flow passage, wherein a heating fluid or a cooling fluid for promoting a temperature rise or a temperature decrease is passed through the flow passage. Quartz glass products used in semiconductor manufacturing equipment.
【請求項2】 前記第1の石英ガラス部材と第2の石英
ガラス部材とを融着させて一体化したことを特徴とする
請求項1に記載された半導体製造装置に用いられる石英
ガラス製品。
2. The quartz glass product used in a semiconductor manufacturing apparatus according to claim 1, wherein the first quartz glass member and the second quartz glass member are fused and integrated.
【請求項3】 前記第1の石英ガラス部材及び第2の石
英ガラス部材が、平板形状であることを特徴とする請求
項1または請求項2に記載された半導体製造装置に用い
られる石英ガラス製品。
3. A quartz glass product used in a semiconductor manufacturing apparatus according to claim 1, wherein the first quartz glass member and the second quartz glass member have a flat plate shape. .
【請求項4】 前記第1の石英ガラス部材及び第2の石
英ガラス部材が半球形状であることを特徴とする請求項
1または請求項2に記載された半導体製造装置に用いら
れる石英ガラス製品。
4. The quartz glass product used in a semiconductor manufacturing apparatus according to claim 1, wherein the first quartz glass member and the second quartz glass member have a hemispherical shape.
【請求項5】 前記第1の石英ガラス部材及び第2の石
英ガラス部材が管形状であることを特徴とする請求項1
または請求項2に記載された半導体製造装置に用いられ
る石英ガラス製品。
5. The quartz glass member according to claim 1, wherein the first quartz glass member and the second quartz glass member have a tubular shape.
A quartz glass product used in the semiconductor manufacturing apparatus according to claim 2.
【請求項6】 前記第1の石英ガラス部材の溝が形成さ
れた面、及び前記第1の石英ガラス部材の溝が形成され
た面と密着する第2の石英ガラス部材の面が、鏡面加工
されていることを特徴とする請求項1乃至請求項5のい
ずれかに記載された半導体製造装置に用いられる石英ガ
ラス製品。
6. A mirror-finished surface of the first quartz glass member on which the groove is formed and a surface of the second quartz glass member which is in close contact with the groove-formed surface of the first quartz glass member. A quartz glass product used in the semiconductor manufacturing apparatus according to claim 1, wherein
【請求項7】 前記石英ガラス製品の形状が平板状また
は半球状であって、該製品の平面に投影された流通路の
投影総面積が、前記平面に投影された製品全体の面積に
対し20乃至80%であることを特徴とする請求項1乃
至請求項6のいずれかに記載された半導体製造装置に用
いられる石英ガラス製品。
7. The quartz glass product has a flat plate shape or a hemispherical shape, and a total projected area of a flow passage projected on a plane of the product is 20 to a total area of the product projected on the plane. The quartz glass product used in the semiconductor manufacturing apparatus according to claim 1, wherein the quartz glass product is in a range of from about 80% to about 80%.
【請求項8】 前記第1の石英ガラス部材として、その
1430℃における粘度が1.0×1010ポイズ以上の
石英ガラス材を用い、かつ、前記第2の石英ガラス部材
として、その粘性が、前記第1の石英ガラス部材の粘性
の0.05乃至0.85倍のものを用いることを特徴と
する請求項1乃至請求項7のいずれかに記載された半導
体製造装置に用いられる石英ガラス製品。
8. A quartz glass material having a viscosity of not less than 1.0 × 10 10 poise at 1430 ° C. as said first quartz glass member, and a viscosity of said second quartz glass member being: 8. A quartz glass product used in a semiconductor manufacturing apparatus according to claim 1, wherein the first quartz glass member has a viscosity of 0.05 to 0.85 times the viscosity of the first quartz glass member. .
【請求項9】 前記第1の石英ガラス部材が、厚さ1乃
至20mmの石英ガラス部材であって、その一面に深さ
0.5乃至10mmの溝が形成された石英ガラス部材で
あることを特徴とする請求項1乃至請求項8のいずれか
に記載された半導体製造装置に用いられる石英ガラス製
品。
9. The quartz glass member according to claim 1, wherein the first quartz glass member is a quartz glass member having a thickness of 1 to 20 mm and a groove having a depth of 0.5 to 10 mm formed on one surface thereof. A quartz glass product used in the semiconductor manufacturing apparatus according to claim 1.
JP2000180323A 2000-06-15 2000-06-15 Quartz glass product used for semiconductor producing device Withdrawn JP2002003229A (en)

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Publication Number Publication Date
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Family

ID=18681449

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JP2002270534A (en) * 2001-03-14 2002-09-20 Tokyo Electron Ltd Thermal treatment apparatus
JP2003095681A (en) * 2001-09-26 2003-04-03 Tosoh Quartz Corp Method for manufacturing fused silica product and fused silica line burner
JP2008021856A (en) * 2006-07-13 2008-01-31 Covalent Materials Corp Electrostatic chuck, and its manufacturing method
JP2008226857A (en) * 2008-05-16 2008-09-25 Matsushita Electric Ind Co Ltd Method and apparatus for plasma treatment
JP2010163289A (en) * 2009-01-13 2010-07-29 Asahi Glass Co Ltd Method for molding silica glass containing tio2 and optical member for euv lithography molded thereby
JP2011508429A (en) * 2007-12-20 2011-03-10 エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ Apparatus for delivering precursor gas to an epitaxially grown substrate

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JP2002270534A (en) * 2001-03-14 2002-09-20 Tokyo Electron Ltd Thermal treatment apparatus
JP2003095681A (en) * 2001-09-26 2003-04-03 Tosoh Quartz Corp Method for manufacturing fused silica product and fused silica line burner
JP2008021856A (en) * 2006-07-13 2008-01-31 Covalent Materials Corp Electrostatic chuck, and its manufacturing method
JP2011508429A (en) * 2007-12-20 2011-03-10 エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ Apparatus for delivering precursor gas to an epitaxially grown substrate
US9175419B2 (en) 2007-12-20 2015-11-03 Soitec Apparatus for delivering precursor gases to an epitaxial growth substrate
JP2008226857A (en) * 2008-05-16 2008-09-25 Matsushita Electric Ind Co Ltd Method and apparatus for plasma treatment
JP2010163289A (en) * 2009-01-13 2010-07-29 Asahi Glass Co Ltd Method for molding silica glass containing tio2 and optical member for euv lithography molded thereby

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